TT Electronics / Semelab Dioden, Transistoren und Thyristoren
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Category | Material | Channel Type | Configuration | Channel Mode | Peak Reverse Repetitive Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Number of Elements per Chip | Maximum Continuous Forward Current - (mA) | Maximum Collector-Base Voltage - (V) | Maximum Drain-Gate Voltage - (V) | Maximum Base-Emitter Voltage - (V) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Peak Reverse Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Continuous DC Collector Current - (A) | Operational Bias Conditions | Maximum Gate Threshold Voltage - (V) | Maximum Continuous Drain Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Maximum Junction Ambient Thermal Resistance | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Typical Power Gain - (dB) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Process Technology | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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| 2N6059 Trans Darlington NPN 100V 12A 3-Pin(2+Tab) TO-3 |
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Semelab | Darlington BJT | NPN | Single | 100 | 12 | 3 | TO-3 | TO | No | No | No | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||
2N3947
Trans GP BJT NPN 40V 0.2A 360mW 3-Pin TO-18
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Semelab | GP BJT | NPN | Bipolar Power | Single | 40 | 1 | 0.2 | 50 to 120 | 100@1mA@10V | 360 | 3 | TO-18 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||
| DMD5028 Trans RF MOSFET N-CH 125V 5-Pin Case D1 |
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Semelab | HF-MOSFETs | Si | N | Dual Common Source | Enhancement | 2 | 125 | ±20 | 7 | 875000 | 360(Max)@50V | 1 | 20(Min) | 5 | Case D1 | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||
2N5153
Trans GP BJT PNP 80V 5A 3-Pin TO-39
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Semelab | GP BJT | PNP | Bipolar Power | Si | Single | 80 | 1 | 100 | 5.5 | 1.45@250mA@2.5A|2.2@500mA@5A | 5 | 30 to 50|50 to 120 | 50@50mA@5V|70@2.5A@5V|35@2.5A@5V | 1000 | 0.75@250mA@2.5A|1.5@500mA@5A | 3 | TO-39 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
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BCY70
Trans GP BJT PNP 40V 350mW 3-Pin TO-18
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Semelab | GP BJT | PNP | Bipolar Small Signal | Si | Single | 40 | 1 | 50 | 5 | 1.2@5mA@50mA | 2 to 30 | 15@50mA@1V | 350 | 0.5@5mA@50mA | 3 | TO-18 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
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2N5416
Trans GP BJT PNP 300V 1A 10000mW 3-Pin TO-39
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Semelab | GP BJT | PNP | Bipolar Power | Single | 300 | 1 | 1 | 30 to 50 | 30@50mA@10V | 10000 | 3 | TO-39 | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||
| SML10SIC06YC Diode Schottky 600V 10A 3-Pin(3+Tab) TO-257AA |
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Semelab | Gleichrichter | Schottky Diode | Dual Common Cathode | 600 | 10 | 250 | 1.8 | 50 | 100000 | 3 | TO-257AA | TO | No | No | No | No | No | 3A001.h | No | No | ||||||||||||||||||||||||||||||||||||||||
| D1203UK Trans RF MOSFET N-CH 40V 30A 4-Pin Case DM |
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Semelab | HF-MOSFETs | Si | N | Single Dual Source | Enhancement | 1 | 40 | ±20 | 30 | 117000 | 180(Max)@0V | 1 | 30 | 10(Min) | 4 | Case DM | No | No | No | No | No | 5A991g. | No | No | ||||||||||||||||||||||||||||||||||||
| SML020DH12 Diode Schottky 1.2KV 20A 3-Pin(3+Tab) TO-258 |
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Semelab | Gleichrichter | Schottky Diode | Dual Common Cathode | 1200 | 20 | 50 | 1.8@10A | 200 | 116000 | 3 | TO-258 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||
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2N3209X
Trans GP BJT PNP 20V 0.2A 360mW 3-Pin TO-18
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Semelab | GP BJT | PNP | Bipolar Power | Si | Single | 20 | 1 | 20 | 4 | 0.98@1mA@10mA|1.2@3mA@30mA|1.7@10mA@100mA | 0.2 | 2 to 30|30 to 50 | 25@10mA@0.3V|30@30mA@0.5V|15@100mA@1V | 486 | 146 | 6(Max) | 360 | 0.2@1mA@10mA|0.25@3mA@30mA|0.75@10mA@100mA | 5(Max) | 60 | 3 | TO-18 | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||
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BUX49
Trans GP BJT NPN 90V 3.5A 10000mW 3-Pin TO-39
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Semelab | GP BJT | NPN | Bipolar Power | Single | 90 | 1 | 3.5 | 2 to 30 | 20@1.7A@4V | 10000 | 3 | TO-39 | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||
| D2019UKTR Gold Metallised Multi-Purpose Silicon Dmos RF FET |
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Semelab | HF-MOSFETs | No | No | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| D5029UK Trans RF MOSFET N-CH 125V 21A 5-Pin Case DR |
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Semelab | HF-MOSFETs | Si | N | Dual Common Source | Enhancement | 1 | 125 | ±20 | 21 | 438000 | 420(Max)@50V | 1 | 350 | 13(Min) | 5 | Case DR | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
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BC477
Trans GP BJT PNP 80V 0.1A 360mW 3-Pin TO-18
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Semelab | GP BJT | PNP | Bipolar Power | Single | 80 | 1 | 0.1 | 50 to 120 | 50@2mA@5V | 360 | 3 | TO-18 | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||
| 2N5153-220M Trans GP BJT NPN 80V 5A 4400mW 3-Pin(3+Tab) TO-257AB |
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 80 | 1 | 100 | 5.5 | 1.45@250mA@2.5A|2.2@500mA@5A | 5 | 30 to 50|50 to 120 | 40@5A@5V|70@2.5A@5V|50@50mA@5V | 40 | 7 | 4400 | 0.75@250mA@2.5A|1.5@500mA@5A | 250(Max) | 500(Typ) | 3 | TO-257AB | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||
| 2N3054 Trans GP BJT NPN 55V 4A 25000mW 3-Pin(2+Tab) TO-66 |
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Semelab | GP BJT | NPN | Bipolar Power | Single | 55 | 1 | 4 | 2 to 30 | 25@0.5A@4V | 25000 | 3 | TO-66 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||
| 2N6849 Trans MOSFET P-CH 100V 5.8A 3-Pin TO-39 |
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Semelab | MOSFETs | Power MOSFET | P | Single | Enhancement | 1 | 100 | ±20 | 5.8 | 300@10V | 25@15V | 20833 | 845@25V | 3 | TO-39 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| D2218UK Trans RF MOSFET 40V 16A 3-Pin Case DP |
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Semelab | HF-MOSFETs | Si | Single | 1 | 40 | ±20 | 7 | 16 | 70000 | 96(Max)@0V | 0 | 10(Min) | 3 | Case DP | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||
| IRF230 Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) TO-3 |
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Semelab | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 200 | ±20 | 9 | 400@10V | 30@10V | 30 | 75000 | 600@25V | 3 | TO-3 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
2N3209XCSM
Trans GP BJT PNP 20V 0.2A 300mW 3-Pin CLLCC-1
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Semelab | GP BJT | PNP | Bipolar Small Signal | Si | Single | 20 | 1 | 20 | 4 | 0.98@1mA@10mA|1.2@3mA@30mA|1.7@10mA@100mA | 0.2 | 2 to 30|30 to 50 | 25@10mA@0.3V|30@30mA@0.5V|15@100mA@1V | 420 | 6(Max) | 300 | 0.2@1mA@10mA|0.25@3mA@30mA|0.75@10mA@100mA | 5(Max) | 60 | 3 | CLLCC-1 | LCC | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||
| D1222UK Trans RF MOSFET 40V 30A 5-Pin Case DK |
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Semelab | HF-MOSFETs | Dual Common Source | 2 | 40 | ±20 | 7 | 30 | 290000 | 180(Max)@0V | 1 | 10(Min) | 5 | Case DK | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||
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2N7002CSM-JQR-B
Trans MOSFET N-CH 60V 0.115A 3-Pin LCC-1
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Semelab | MOSFETs | N | Enhancement | 3 | CLLCC-1 | LCC | No | No | No | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||
| D1006UK Trans RF MOSFET N-CH 70V 30A 6-Pin Case DV |
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Semelab | HF-MOSFETs | Si | N | Single Quad Source | Enhancement | 1 | 70 | ±20 | 7 | 30 | 220000 | 360(Max)@0V | 1 | 14(Min) | 6 | Case DV | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
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2N2243A
Trans GP BJT NPN 80V 1A 800mW 3-Pin TO-39
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Semelab | GP BJT | NPN | Bipolar Power | Single | 80 | 1 | 120 | 7 | 1.3@15mA@150mA | 1 | 2 to 30|30 to 50 | 15@0.1mA@10V|30@10mA@10V|40@150mA@10V|15@500mA@10V|30@150mA@1V | 800 | 0.25@15mA@150mA | 3 | TO-39 | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| BDS16 Trans GP BJT NPN 120V 8A 43750mW 3-Pin(3+Tab) TO-257AB |
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 120 | 1 | 120 | 5 | 8 | 2 to 30|30 to 50 | 40@0.5A@2V|15@4A@2V | 43750 | 0.4@0.05A@0.5A|1.5@0.4A@4A | 500 | 3 | TO-257AB | No | No | No | No | EAR99 | No | No |