TT Electronics / Semelab Dioden, Transistoren und Thyristoren
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Category | Material | Channel Type | Configuration | Channel Mode | Peak Reverse Repetitive Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Number of Elements per Chip | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Peak Reverse Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Operational Bias Conditions | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Power Dissipation - (mW) | Maximum Continuous Drain Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Maximum Junction Case Thermal Resistance | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Frequency - (MHz) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Process Technology | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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| 2N5153-220M Trans GP BJT NPN 80V 5A 4400mW 3-Pin(3+Tab) TO-257AB |
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 80 | 100 | 1 | 5.5 | 1.45@250mA@2.5A|2.2@500mA@5A | 5 | 40 | 4400 | 30 to 50|50 to 120 | 40@5A@5V|70@2.5A@5V|50@50mA@5V | 7 | 250(Max) | 0.75@250mA@2.5A|1.5@500mA@5A | 3 | TO-257AB | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||
BC477
Trans GP BJT PNP 80V 0.1A 360mW 3-Pin TO-18
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Semelab | GP BJT | PNP | Bipolar Power | Single | 80 | 1 | 0.1 | 360 | 50 to 120 | 50@2mA@5V | 3 | TO-18 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||
| 2N6849 Trans MOSFET P-CH 100V 5.8A 3-Pin TO-39 |
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Semelab | MOSFETs | Power MOSFET | P | Single | Enhancement | 1 | 100 | ±20 | 20833 | 5.8 | 300@10V | 25@15V | 845@25V | 3 | TO-39 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
ZTX653/753DCSM
NPN/PNP DUAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE
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Semelab | GP BJT | 6 | CLLCC-2 | LCC | No | No | No | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3054 Trans GP BJT NPN 55V 4A 25000mW 3-Pin(2+Tab) TO-66 |
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Semelab | GP BJT | NPN | Bipolar Power | Single | 55 | 1 | 4 | 25000 | 2 to 30 | 25@0.5A@4V | 3 | TO-66 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||
| IRFY9140-QR-B Trans MOSFET P-CH 100V 13A 3-Pin(3+Tab) TO-257AB |
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Semelab | MOSFETs | Power MOSFET | P | Single | Enhancement | 1 | 100 | ±20 | 60000 | 13 | 240@10V | 60(Max)@10V | 1400@25V | 3 | TO-257AB | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
SML0505FN
Trans MOSFET N-CH 50V 16A 3-Pin TO-39
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Semelab | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 50 | ±20 | 4 | 25000 | 16 | 50@10V | 1500@25V | 3 | TO-39 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
2N4392CSM
Trans JFET N-CH 40V Si 3-Pin CLLCC-1
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Semelab | JFETs | Si | N | Single | 40 | 40 | 40 | 300 | 60000 | 3 | CLLCC-1 | LCC | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||
BFX85-QR
Trans GP BJT NPN 60V 1A 800mW 3-Pin TO-39
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 60 | 100 | 1 | 1.2@1mA@10mA|1.3@15mA@150mA|1.5@50mA@500mA|2@100mA@1A | 1 | 200 | 800 | 2 to 30|30 to 50|50 to 120 | 50@10mA@10V|70@150mA@10V|30@500mA@10V|15@1A@10V | 35 | 7 | 0.2@1mA@10mA|0.35@15mA@150mA|1@50mA@500mA|1.6@100mA@1A | 3 | TO-39 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||
| IRF150 Trans MOSFET N-CH 100V 38A 3-Pin(2+Tab) TO-3 |
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Semelab | MOSFETs | Power MOSFET | N | Single | 1 | 100 | ±20 | 150000 | 38 | 65@10V | 125(Max)@10V | 125(Max) | 3700@25V | 3 | TO-3 | TO | No | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
| 2N6299 Trans Darlington PNP 80V 8A 3-Pin(2+Tab) TO-66 |
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Semelab | Darlington BJT | PNP | Single | 80 | 8 | 3 | TO-66 | TO | No | No | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||
2N3904DCSM
Trans GP BJT NPN 40V 0.2A 310mW 6-Pin CLLCC-2
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Semelab | GP BJT | NPN | Bipolar Power | Dual | 40 | 2 | 0.2 | 310 | 50 to 120 | 100@1mA@10V | 6 | CLLCC-2 | LCC | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||
BUP49
Trans GP BJT NPN 80V 90A 3-Pin(2+Tab) TO-3
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Semelab | GP BJT | NPN | Bipolar Power | Single | 80 | 1 | 90 | 300000 | 2 to 30 | 15@80A@4V | 3 | TO-3 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||
| 2N6686 Trans GP BJT NPN 180V 25A 3-Pin(2+Tab) TO-3 |
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Semelab | GP BJT | NPN | Bipolar Power | Single | 180 | 1 | 8 | 1.8@2.5A@25A | 25 | 200000 | 2 to 30|30 to 50 | 15@25A@2V|30@1A@2V|25@10A@2V | 1.5@2.5A@25A | 100 | 3 | TO-3 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
| 2N3441 Trans GP BJT NPN 140V 3A 25000mW 3-Pin(2+Tab) TO-66 |
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 140 | 160 | 1 | 7 | 3 | 25000 | 2 to 30 | 25@0.5A@4V|5@2.7A@4V | 6@0.9A@2.7A | 3 | TO-66 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
| BYV32-200M Diode Switching 200V 20A 3-Pin(3+Tab) TO-257AB |
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Semelab | Gleichrichter | Switching Diode | Dual Common Cathode | 200 | 20 | 80 | 1.5 | 30 | 35 | 3 | TO-257AB | No | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||
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2N6849-QR-B
Trans MOSFET P-CH 100V 5.8A 3-Pin TO-39
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Semelab | MOSFETs | Power MOSFET | P | Single | Enhancement | 1 | 100 | ±20 | 20833 | 5.8 | 300@10V | 25@15V | 845@25V | 3 | TO-39 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
| BDS21-QR-EB Trans GP BJT PNP 80V 5A 3-Pin(3+Tab) TO-257AB |
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Semelab | GP BJT | PNP | Bipolar Power | Si | Single | 80 | 80 | 1 | 5 | 5 | 35000 | 500 to 3600 | 1000@0.5A@3V|1000@3A@3V | 2@12mA@3A|4@20mA@5A | 3 | TO-257AB | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
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2N3700DCSM
Trans GP BJT NPN 80V 1A 525mW 6-Pin CLLCC-2
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Semelab | GP BJT | NPN | Bipolar Power | Si | Dual | 80 | 140 | 2 | 7 | 1.1@15mA@150mA | 1 | 240 | 525 | 2 to 30|30 to 50|50 to 120 | 50@0.1mA@10V|90@10mA@10V|100@150mA@10V|50@500mA@10V|15@1A@10V | 12(Max) | 0.5@50mA@500mA|0.2@15mA@150mA | 200 | 6 | CLLCC-2 | LCC | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||
| IRF9230 Trans MOSFET P-CH 200V 6.5A 3-Pin(2+Tab) TO-3 |
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Semelab | MOSFETs | Power MOSFET | P | Single | Enhancement | 1 | 200 | ±20 | 75000 | 6.5 | 920@10V | 31(Max)@10V | 31(Max) | 700@25V | 3 | TO-3 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
BDS20SMD
Trans GP BJT NPN 80V 5A 3-Pin SMD-1
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 80 | 80 | 1 | 5 | 5 | 35000 | 500 to 3600 | 1000@0.5A@3V|1000@3A@3V | 2@12mA@3A|4@20mA@5A | 3 | SMD-1 | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
2N3501CSM4-JQR-B
Trans GP BJT NPN 150V 0.3A 500mW 4-Pin CLLCC-3
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Semelab | GP BJT | NPN | Bipolar Small Signal | Si | Single | 150 | 150 | 1 | 6 | 0.8@1mA@10mA|0.9@5mA@50mA|1.2@15mA@150mA | 0.3 | 350 | 500 | 2 to 30|30 to 50|50 to 120 | 35@0.1mA@10V|50@1mA@10V|75@10mA@10V|100@150mA@10V|20@300mA@10V | 8(Max) | 0.2@1mA@10mA|0.25@5mA@50mA|0.4@15mA@150mA | 4 | CLLCC-3 | LCC | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||
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BUR52
Trans GP BJT NPN 250V 60A 3-Pin(2+Tab) TO-3
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Semelab | GP BJT | NPN | Bipolar Power | Single | 250 | 350 | 1 | 10 | 1.8@2A@25A|2@4A@40A | 60 | 350000 | 2 to 30 | 20@5A@4V|15@40A@4V | 1@2A@25A|1.5@4A@40A | 3 | TO-3 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
| 2N7086-QR-B N-CHANNEL ENHANCEMENT MODE TRANSISTOR |
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Semelab | MOSFETs | 3 | TO-257AB | No | No | No | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||
| BDX67 Trans Darlington NPN 60V 16A 150000mW 3-Pin(2+Tab) TO-3 |
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Semelab | Darlington BJT | NPN | Single | 60 | 80 | 1 | 16 | 5 | 150000 | 1000@10A@3V | 2@40mA@10A | 3 | TO-3 | TO | No | Unknown | No | No | No | No | EAR99 | No | No |