TT Electronics / Semelab Dioden, Transistoren und Thyristoren
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Category | Material | Channel Type | Configuration | Channel Mode | Peak Reverse Repetitive Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Number of Elements per Chip | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Peak Reverse Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Operational Bias Conditions | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Power Dissipation - (mW) | Maximum Continuous Drain Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Maximum Junction Case Thermal Resistance | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Frequency - (MHz) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Process Technology | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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| BDS20-QR-EB Trans GP BJT NPN 80V 5A 3-Pin(3+Tab) TO-257AB |
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 80 | 80 | 1 | 5 | 5 | 35000 | 500 to 3600 | 1000@0.5A@3V|1000@3A@3V | 2@12mA@3A|4@20mA@5A | 3 | TO-257AB | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
| BDS20 Trans GP BJT NPN 80V 5A 3-Pin(3+Tab) TO-257AB |
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 80 | 80 | 1 | 5 | 5 | 35000 | 500 to 3600 | 1000@3A@3V|1000@0.5A@3V | 2@12mA@3A|4@20mA@5A | 3 | TO-257AB | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
SML05SC06D3A
Diode Schottky 600V 5A 2-Pin DLCC
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Semelab | Gleichrichter | Schottky Diode | Single | 600 | 5 | 60 | 1.8 | 200 | 2960 | 2 | DLCC | LCC | No | No | No | No | No | 3A001.h | No | No | |||||||||||||||||||||||||||||||||||||||
| BDY71X Trans GP BJT NPN 55V 4A 3-Pin(2+Tab) TO-66 |
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Semelab | GP BJT | NPN | Bipolar Power | Single | 55 | 1 | 4 | 29000 | 50 to 120 | 80@0.5A@4V | 3 | TO-66 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||
| IRFY9140 Trans MOSFET P-CH 100V 13A 3-Pin(3+Tab) TO-257AB |
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Semelab | MOSFETs | Power MOSFET | P | Single | Enhancement | 1 | 100 | ±20 | 4 | 60000 | 13 | 240@10V | 60(Max)@10V | 60(Max) | 1400@25V | 3 | TO-257AB | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
2N2905A
Trans GP BJT PNP 60V 0.6A 800mW 3-Pin TO-39
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Semelab | GP BJT | PNP | Bipolar Power | Si | Single | 60 | 60 | 1 | 5 | 1.3@15mA@150mA|2.6@50mA@500mA | 0.6 | 800 | 50 to 120 | 75@0.1mA@10V|100@1mA@10V|100@10mA@10V|100@150mA@10V|50@500mA@10V | 0.4@15mA@150mA|1.6@50mA@500mA | 3 | TO-39 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||
| BDX63A Trans Darlington NPN 80V 8A 90000mW 3-Pin(2+Tab) TO-3 |
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Semelab | Darlington BJT | NPN | Single | 80 | 100 | 1 | 8 | 5 | 90000 | 1000@3A@3V | 2@12mA@3A | 3 | TO-3 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||
| BDS12 Trans GP BJT NPN 100V 15A 43750mW 3-Pin(3+Tab) TO-257AB |
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 100 | 100 | 1 | 5 | 2.5@2.5A@10A | 15 | 43750 | 2 to 30|30 to 50 | 40@0.5A@4V|15@5A@4V|5@10A@4V | 1@0.5A@5A|3@2.5A@10A | 3 | TO-257AB | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
| BDS13 Trans GP BJT PNP 60V 15A 43750mW 3-Pin(3+Tab) TO-257AB |
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Semelab | GP BJT | PNP | Bipolar Power | Si | Single | 60 | 60 | 1 | 5 | 2.5@2.5A@10A | 15 | 43750 | 2 to 30|30 to 50 | 40@0.5A@4V|15@5A@4V|5@10A@4V | 1@0.5A@5A|3@2.5A@10A | 3 | TO-257AB | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
| BYV32-200AM Diode Switching 200V 20A 3-Pin(3+Tab) TO-257AB |
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Semelab | Gleichrichter | Switching Diode | Dual Common Anode | 200 | 20 | 80 | 1.5 | 30 | 35 | 3 | TO-257AB | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||
2N2907A-QR-B
Trans GP BJT PNP 60V 0.6A 400mW 3-Pin TO-18
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Semelab | GP BJT | PNP | Bipolar Small Signal | Si | Single | 60 | 60 | 1 | 5 | 1.3@15mA@150mA|2.6@50mA@500mA | 0.6 | 400 | 50 to 120 | 75@0.1mA@10V|100@1mA@10V|100@10mA@10V|100@150mA@10V|50@500mA@10V | 0.4@15mA@150mA|1.6@50mA@500mA | 3 | TO-18 | TO | No | No | No | No | No | No | No | ||||||||||||||||||||||||||||||||||
| BDS19-QR-B Bipolar Pnp Device In A Hermetically Sealed Ceramic Surface Mount Package |
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Semelab | GP BJT | 3 | TO-220M | No | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||
| BDX64B BIPOLAR PNP DEVICE IN A HERMETICALLY SEALED TO3 METAL PACKAGE |
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Semelab | Darlington BJT | 3 | TO-3 | TO | No | No | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||
| BDX66A Trans Darlington PNP 80V 20A 150000mW 3-Pin(2+Tab) TO-3 |
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Semelab | Darlington BJT | PNP | Single | 80 | 80 | 1 | 20 | 5 | 150000 | 1000@10A@3V | 2@40mA@10A | 3 | TO-3 | TO | No | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| BYV34-400RM Diode Switching 400V 20A 3-Pin(3+Tab) TO-257AB |
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Semelab | Gleichrichter | Switching Diode | Dual Series | 400 | 20 | 100 | 1.7 | 50 | 50 | 3 | TO-257AB | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||
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2N4392
Trans JFET N-CH 40V Si 3-Pin TO-18
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Semelab | JFETs | Si | N | Single | 40 | 40 | 40 | 300 | 60000 | 3 | TO-18 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||
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2N5415
Trans GP BJT PNP 200V 1A 1000mW 3-Pin TO-39
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Semelab | GP BJT | PNP | Bipolar Power | Si | Single | 200 | 200 | 1 | 4 | 1 | 150 | 1000 | 30 to 50 | 30@50mA@10V | 25(Max) | 0.5@5mA@50mA | 3 | TO-39 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||
| BDY58 Trans GP BJT NPN 125V 25A 175000mW 3-Pin(2+Tab) TO-3 |
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 125 | 160 | 1 | 10 | 2@1A@10A | 25 | 175000 | 50 to 120 | 60(Max) | 1 | 1.4@1A@10A | 3 | TO-3 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||
BUP53
Trans GP BJT NPN 250V 60A 3-Pin(2+Tab) TO-3
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 250 | 1 | 10 | 1.1@2A@20A|1.4@5A@50A | 60 | 300000 | 2 to 30 | 12@20A@4V|5@50A@4V | 0.6@2A@20A|0.8@8A@50A | 3 | TO-3 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
| 2N7085-QR-B Trans MOSFET N-CH 100V 20A 3-Pin(3+Tab) TO-257AB |
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Semelab | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 100 | ±20 | 4 | 60000 | 20 | 75@10V | 35@10V | 35 | 1400@25V | 3 | TO-257AB | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
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BUT90
Trans GP BJT NPN 125V 50A 250000mW 3-Pin(2+Tab) TO-3
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Semelab | GP BJT | NPN | Bipolar Power | Single | 125 | 1 | 50 | 250000 | 2 to 30 | 10 | 3 | TO-3 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||
| D1031UK Trans RF MOSFET 70V 5A 8-Pin Case F-0127 |
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Semelab | HF-MOSFETs | Si | Dual Quad Source | 2 | 70 | ±20 | 7 | 30000 | 5 | 60(Max)@0V | 13(Min) | 1 | 10 | 1000 | 8 | Case F-0127 | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
| BCY70-O-B Bipolar Small Signal GP BJT |
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Semelab | GP BJT | Unknown | Unknown | Unknown | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SB16-100M Diode Schottky 100V 16A 3-Pin(3+Tab) TO-257AB |
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Semelab | Gleichrichter | Schottky Diode | Dual Common Cathode | 100 | 16 | 245 | 1 | 500 | 3 | TO-257AB | No | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||
| 2N2222ACSM-B Silicon Switching NPN Transistor |
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Semelab | GP BJT | 3 | CLLCC-1 | LCC | No | No | No | No | No | No |