TT Electronics / Semelab Dioden, Transistoren und Thyristoren
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Category | Material | Channel Type | Configuration | Channel Mode | Peak Reverse Repetitive Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Number of Elements per Chip | Maximum Continuous Forward Current - (mA) | Maximum Collector-Base Voltage - (V) | Maximum Drain-Gate Voltage - (V) | Maximum Base-Emitter Voltage - (V) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Peak Reverse Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Continuous DC Collector Current - (A) | Operational Bias Conditions | Maximum Gate Threshold Voltage - (V) | Maximum Continuous Drain Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Maximum Junction Ambient Thermal Resistance | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Typical Power Gain - (dB) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Process Technology | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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| D2017UK Trans RF MOSFET 65V 2A 3-Pin Case DP |
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Semelab | HF-MOSFETs | Si | Single | 1 | 65 | ±20 | 7 | 2 | 29000 | 20(Max)@0V | 13(Min) | 3 | Case DP | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||
| 2N6250 Trans GP BJT NPN 275V 10A 100000mW 3-Pin(2+Tab) TO-3 |
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Semelab | GP BJT | NPN | Bipolar Power | Single | 275 | 1 | 10 | 2 to 30 | 8@10A@3V | 100000 | 3 | TO-3 | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||
| IRFY240-QR-B Trans MOSFET N-CH 200V 12A 3-Pin(3+Tab) TO-257AB |
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Semelab | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 200 | ±20 | 4 | 12 | 220@10V | 60@10V | 60 | 60000 | 1300@25V | 3 | TO-257AB | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
| BDS10 Trans GP BJT NPN 60V 15A 43750mW 3-Pin(3+Tab) TO-257AB |
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 60 | 1 | 60 | 5 | 2.5@2.5A@10A | 15 | 2 to 30|30 to 50 | 40@0.5A@4V|15@5A@4V|5@10A@4V | 43750 | 1@0.5A@5A|3@2.5A@10A | 3 | TO-257AB | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
2N3501DCSM
Trans GP BJT NPN 150V 0.3A 500mW 6-Pin CLLCC-2
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Semelab | GP BJT | NPN | Bipolar Small Signal | Si | Dual | 150 | 2 | 150 | 6 | 0.8@1mA@10mA|0.9@5mA@50mA | 0.3 | 2 to 30|30 to 50|50 to 120 | 35@0.1mA@10V|50@1mA@10V|75@10mA@10V|100@150mA@10V|20@300mA@10V | 500 | 0.2@1mA@10mA|0.25@5mA@50mA|0.4@15mA@150mA | 6 | CLLCC-2 | LCC | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
| IRFY9130-QR-B Trans MOSFET P-CH 100V 9.3A 3-Pin(3+Tab) TO-257AB |
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Semelab | MOSFETs | Power MOSFET | P | Single | Enhancement | 1 | 100 | ±20 | 9.3 | 360@10V | 30(Max)@10V | 45000 | 800@25V | 3 | TO-257AB | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||
2N3963
Trans GP BJT PNP 80V 0.2A 360mW 3-Pin TO-18
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Semelab | GP BJT | PNP | Bipolar Power | Single | 80 | 1 | 0.2 | 50 to 120 | 100@1mA@5V | 360 | 3 | TO-18 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||
| 2N2857.02SML Trans RF BJT NPN 15V 0.04A 200mW 4-Pin TO-72 |
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Semelab | HF-BJT | NPN | Si | Single | 15 | 1 | 30 | 2.5 | 0.04 | 10V/12mA | 30 to 50 | 30@3mA@1V | 1.4 | 200 | 0.03(Min) | 19(Max) | 1900 | 4.5 | 4 | TO-72 | TO | No | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||
| DMD1012 Trans RF MOSFET 70V 15A 5-Pin Case D1 |
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Semelab | HF-MOSFETs | Si | Dual Common Source | 2 | 70 | ±20 | 7 | 15 | 500000 | 180(Max)@28V | 1 | 13(Min) | 5 | Case D1 | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||
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2N3700DCSM-QR-B
HIGH VOLTAGE MEDIUM POWER NPN DUAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE
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Semelab | GP BJT | Si | 6 | CLLCC-2 | LCC | No | No | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||
| D1015UK Trans RF MOSFET N-CH 70V 20A 5-Pin Case DH |
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Semelab | HF-MOSFETs | Si | N | Dual Common Source | Enhancement | 2 | 70 | ±20 | 20 | 350000 | 240(Max)@28V | 1 | 125 | 13(Min) | 5 | Case DH | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
BUX50
Trans GP BJT NPN 125V 3.5A 10000mW 3-Pin TO-39
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Semelab | GP BJT | NPN | Bipolar Power | Single | 125 | 1 | 3.5 | 2 to 30 | 20@1.5A@4V | 10000 | 3 | TO-39 | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||
| D2282UK Trans RF MOSFET N-CH 40V 0.4A 4-Pin(3+Tab) SOT-223 |
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Semelab | HF-MOSFETs | Si | N | Single Dual Drain | Enhancement | 1 | 40 | ±20 | 0.4 | 2000 | 12(Max)@0V | 0 | 0.75 | 8(Min) | 4 | SOT-223 | SOT | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
| BDS20 Trans GP BJT NPN 80V 5A 3-Pin(3+Tab) TO-257AB |
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 80 | 1 | 80 | 5 | 5 | 500 to 3600 | 1000@3A@3V|1000@0.5A@3V | 35000 | 2@12mA@3A|4@20mA@5A | 3 | TO-257AB | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| BDY25B Trans GP BJT NPN 140V 6A 50000mW 3-Pin(2+Tab) TO-3 |
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Semelab | GP BJT | NPN | Bipolar Power | Single | 140 | 1 | 200 | 10 | 1.2@0.25A@2A | 6 | 30 to 50 | 30@2A@4V | 50000 | 0.6@0.25A@2A | 65 | 500 | 3 | TO-3 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||
| 2N4036 Transistor BJT |
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Semelab | GP BJT | Unknown | Unknown | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| D1212UK Trans RF MOSFET 40V 30A 5-Pin Case DH |
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Semelab | HF-MOSFETs | Si | Dual Common Source | 2 | 40 | ±20 | 7 | 30 | 290000 | 180(Max)@0V | 1 | 10(Min) | 5 | Case DH | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||
| BDY28B Trans GP BJT NPN 250V 6A 50000mW 3-Pin(2+Tab) TO-3 |
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Semelab | GP BJT | NPN | Bipolar Power | Single | 250 | 1 | 500 | 10 | 1.2@0.25A@2A | 6 | 30 to 50 | 30@2A@4V | 3.5 | 50000 | 0.6@0.25A@2A | 65 | 1000 | 3 | TO-3 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||
2N3055
Trans GP BJT NPN 60V 15A 115000mW 3-Pin(2+Tab) TO-3
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 60 | 1 | 100 | 7 | 15 | 2 to 30 | 20@4A@4V | 115000 | 0.75@0.4A@4A|2@3.3A@10A | 3 | TO-3 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
2N6796-JQR-B
TMOS FET ENHANCEMENT N - CHANNEL
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Semelab | MOSFETs | 3 | TO-39 | TO | No | Unknown | No | No | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||
| SB16-45M-B Dual Schottky Barrier Diode |
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Semelab | Gleichrichter | Schottky Diode | Dual Common Cathode | 45 | 16 | 245 | 0.8 | 500 | Unknown | Unknown | Unknown | No | No | |||||||||||||||||||||||||||||||||||||||||||||||
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2N6661
Trans MOSFET N-CH 90V 0.9A 3-Pin TO-39
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Semelab | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 90 | ±20 | 2 | 0.9 | 4000@10V | 725 | 50(Max)@25V | 3 | TO-39 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| BDX62B BIPOLAR PNP DEVICE IN A HERMETICALLY SEALED TO3 METAL PACKAGE |
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Semelab | Darlington BJT | 3 | TO-3 | TO | No | No | No | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||
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2N2222A-QR-B
Trans GP BJT NPN 50V 0.8A 500mW 3-Pin TO-18
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Semelab | GP BJT | NPN | Bipolar Small Signal | Single | 50 | 1 | 75 | 6 | 1.2@15mA@150mA|2@50mA@500mA | 0.8 | 30 to 50|50 to 120 | 35@0.1mA@10V|50@1mA@1V|75@10mA@10V|100@150mA@10V|50@150mA@1V|40@500mA@10V | 500 | 0.3@15mA@150mA|1@50mA@500mA | 250 | 3 | TO-18 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
| D1211UKTR Trans RF MOSFET N-CH 40V 10A 8-Pin SO |
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Semelab | HF-MOSFETs | Si | N | Single Dual Drain Dual Gate Quad Source | Enhancement | 1 | 40 | ±20 | 10 | 30000 | 60(Max)@0V | 1 | 10 | 10(Min) | 8 | SO | SO | No | No | No | No | EAR99 | No | No |