TT Electronics / Semelab Dioden, Transistoren und Thyristoren
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Category | Material | Channel Type | Configuration | Channel Mode | Peak Reverse Repetitive Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Number of Elements per Chip | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Peak Reverse Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Operational Bias Conditions | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Power Dissipation - (mW) | Maximum Continuous Drain Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Maximum Junction Case Thermal Resistance | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Frequency - (MHz) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Process Technology | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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BC477
Trans GP BJT PNP 80V 0.1A 360mW 3-Pin TO-18
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Semelab | GP BJT | PNP | Bipolar Power | Single | 80 | 1 | 0.1 | 360 | 50 to 120 | 50@2mA@5V | 3 | TO-18 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||
| D2218UK Trans RF MOSFET 40V 16A 3-Pin Case DP |
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Semelab | HF-MOSFETs | Si | Single | 1 | 40 | ±20 | 7 | 70000 | 16 | 96(Max)@0V | 10(Min) | 0 | 1000 | 3 | Case DP | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| 2N2223 Trans GP BJT NPN 60V 0.5A 600mW 6-Pin TO-77 |
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Semelab | GP BJT | NPN | Bipolar Power | Si | Dual | 60 | 100 | 2 | 7 | 0.9@5mA@50mA | 0.5 | 600 | 2 to 30|30 to 50|50 to 120 | 15@10uA@5V|25@100uA@5V|50@10mA@5V | 15(Max) | 1.2@5mA@50mA | 6 | TO-77 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||
| D2294UK Trans RF MOSFET N-CH 40V 12A 6-Pin SOT-171 |
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Semelab | HF-MOSFETs | Si | N | Single Quad Source | Enhancement | 1 | 40 | ±20 | 50000 | 12 | 72(Max)@0V | 11(Min) | 1 | 15 | 1000 | 6 | SOT-171 | SOT | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||
| BDS12 Trans GP BJT NPN 100V 15A 43750mW 3-Pin(3+Tab) TO-257AB |
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 100 | 100 | 1 | 5 | 2.5@2.5A@10A | 15 | 43750 | 2 to 30|30 to 50 | 40@0.5A@4V|15@5A@4V|5@10A@4V | 1@0.5A@5A|3@2.5A@10A | 3 | TO-257AB | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
| BYV34-500M Diode Switching 500V 20A 3-Pin(3+Tab) TO-257AB |
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Semelab | Gleichrichter | Switching Diode | Dual Common Cathode | 500 | 20 | 100 | 1.7 | 50 | 50 | 3 | TO-257AB | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||
2N7002CSM
Trans MOSFET N-CH 60V 0.115A 3-Pin CLLCC-1
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Semelab | MOSFETs | Small Signal | N | Single | Enhancement | 1 | 60 | ±40 | 2.5 | 350 | 0.115 | 7500@10V | 50(Max)@25V | Unknown | 3 | CLLCC-1 | LCC | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
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2N2222ACSM-QR-B
Trans GP BJT NPN 50V 0.8A 3-Pin CLLCC-1
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Semelab | GP BJT | NPN | Bipolar Power | Single | 50 | 75 | 1 | 6 | 2@50mA@500mA|1.2@15mA@150mA | 0.8 | 500 | 30 to 50|50 to 120 | 50@0.1mA@10V|75@1mA@10V|100@10mA@10V|100@150mA@10V|30@500mA@10V | 0.3@15mA@150mA|1@50mA@500mA | 250 | 3 | CLLCC-1 | LCC | No | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||
| IRFY9140-QR-B Trans MOSFET P-CH 100V 13A 3-Pin(3+Tab) TO-257AB |
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Semelab | MOSFETs | Power MOSFET | P | Single | Enhancement | 1 | 100 | ±20 | 60000 | 13 | 240@10V | 60(Max)@10V | 1400@25V | 3 | TO-257AB | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
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2N3019CSM
Trans GP BJT NPN 80V 1A 500mW 3-Pin CLLCC-1
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Semelab | GP BJT | NPN | Bipolar Small Signal | Si | Single | 80 | 140 | 1 | 7 | 1.1@15mA@150mA | 1 | 350 | 500 | 2 to 30|30 to 50|50 to 120 | 50@0.1mA@10V|90@10mA@10V|100@150mA@10V|50@500mA@10V|15@1A@10V | 90 | 12(Max) | 0.2@15mA@150mA|0.5@50mA@500mA | 4 | 3 | CLLCC-1 | LCC | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||
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2N3700
Trans GP BJT NPN 80V 1A 500mW 3-Pin TO-18
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 80 | 140 | 1 | 7 | 1.1@15mA@150mA | 1 | 500 | 50 to 120 | 50@0.1mA@10V|90@10mA@10V|100@150mA@10V|50@500mA@10V|15@1A@10V | 0.2@15mA@150mA|0.5@50mA@500mA | 3 | TO-18 | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
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2N4392CSM
Trans JFET N-CH 40V Si 3-Pin CLLCC-1
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Semelab | JFETs | Si | N | Single | 40 | 40 | 40 | 300 | 60000 | 3 | CLLCC-1 | LCC | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||
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2N5551CSM-JQR-B
Trans GP BJT NPN 160V 0.6A 350mW 3-Pin CLLCC-1
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Semelab | GP BJT | NPN | Bipolar Small Signal | Single | 160 | 180 | 1 | 6 | 1@1mA@10mA|1@5mA@50mA | 0.6 | 350 | 30 to 50|50 to 120 | 80@1mA@5V|80@10mA@5V|30@50mA@5V | 0.15@1mA@10mA|0.2@5mA@50mA | 300 | 3 | CLLCC-1 | LCC | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||
| BDX65B BIPOLAR NPN DARLINGTON DEVICE |
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Semelab | Darlington BJT | 3 | TO-3 | TO | No | No | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||
BUX54
Trans GP BJT NPN 400V 2A 10000mW 3-Pin TO-39
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 400 | 450 | 1 | 7 | 1.5@0.15A@1.2A | 2 | 10000 | 17.5 | 0.5@0.06A@0.6A|1.3@0.15A@1.2A | 3 | TO-39 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
BUX23
Trans GP BJT NPN 325V 30A 250000mW 3-Pin(2+Tab) TO-3
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 325 | 400 | 1 | 7 | 1.5@3.2A@16A | 30 | 250000 | 2 to 30 | 12@8A@4V|8@16A@4V | 0.6 | 0.8@1.6A@8A|1@3.2A@16A | 3 | TO-3 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||
| D1006UK Trans RF MOSFET N-CH 70V 30A 6-Pin Case DV |
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Semelab | HF-MOSFETs | Si | N | Single Quad Source | Enhancement | 1 | 70 | ±20 | 7 | 220000 | 30 | 360(Max)@0V | 14(Min) | 1 | 200 | 6 | Case DV | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
| D1014UK Trans RF MOSFET N-CH 70V 10A 3-Pin Case DP |
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Semelab | HF-MOSFETs | Si | N | Single | Enhancement | 1 | 70 | ±20 | 87500 | 10 | 120(Max)@0V | 12(Min) | 1 | 40 | 500 | 3 | Case DP | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
| D1027UK Trans RF MOSFET N-CH 70V 30A 5-Pin Case DR |
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Semelab | HF-MOSFETs | Si | N | Dual Common Source | Enhancement | 2 | 70 | ±20 | 438000 | 30 | 360(Max)@28V | 13(Min) | 1 | 150 | 200 | 5 | Case DR | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
| D1031UK Trans RF MOSFET 70V 5A 8-Pin Case F-0127 |
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Semelab | HF-MOSFETs | Si | Dual Quad Source | 2 | 70 | ±20 | 7 | 30000 | 5 | 60(Max)@0V | 13(Min) | 1 | 10 | 1000 | 8 | Case F-0127 | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
| D2220UK Trans RF MOSFET 40V 4A 8-Pin SO |
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Semelab | HF-MOSFETs | Si | Dual Quad Source | 2 | 40 | ±20 | 17500 | 4 | 24(Max)@0V | 10(Min) | 1 | 5 | 2000 | 8 | SO | SO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
| D5002UK Trans RF MOSFET N-CH 125V 6A 4-Pin Case DA |
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Semelab | HF-MOSFETs | Si | N | Single Dual Source | Enhancement | 1 | 125 | ±20 | 87000 | 6 | 120(Max)@50V | 16(Min) | 1 | 40 | 175 | 4 | Case DA | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
| DMD1029 Trans RF MOSFET N-CH 70V 35A 5-Pin Case D1 |
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Semelab | HF-MOSFETs | Si | N | Dual Common Source | Enhancement | 2 | 70 | ±20 | 7 | 875000 | 35 | 420(Max)@28V | 16(Min) | 1 | 400 | 5 | Case D1 | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
| D1030UK Trans RF MOSFET N-CH 70V 40A 5-Pin Case DR |
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Semelab | HF-MOSFETs | Si | N | Dual Common Source | Enhancement | 2 | 70 | ±20 | 500000 | 40 | 480(Max)@28V | 13(Min) | 1 | 200 | 5 | Case DR | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
| D1203UK Trans RF MOSFET N-CH 40V 30A 4-Pin Case DM |
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Semelab | HF-MOSFETs | Si | N | Single Dual Source | Enhancement | 1 | 40 | ±20 | 117000 | 30 | 180(Max)@0V | 10(Min) | 1 | 30 | 200 | 4 | Case DM | No | No | No | No | No | 5A991g. | No | No |