TT Electronics / Semelab Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Category | Material | Configuration | Channel Type | Channel Mode | Peak Reverse Repetitive Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Number of Elements per Chip | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Peak Reverse Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Operational Bias Conditions | Maximum Gate Threshold Voltage - (V) | Minimum DC Current Gain | Maximum Continuous Drain Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Typical Gate Charge @ Vgs - (nC) | Maximum Junction Ambient Thermal Resistance | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Transition Frequency - (MHz) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Input Capacitance @ Vds - (pF) | Maximum Output Power - (W) | Typical Output Capacitance - (pF) | Maximum Power Dissipation - (mW) | Minimum Frequency - (MHz) | Maximum Frequency - (MHz) | Maximum Drain-Source Resistance - (Ohm) | Typical Power Gain - (dB) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Process Technology | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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| D2081UK.F Trans RF MOSFET N-CH 65V 0.2A 4-Pin(3+Tab) SOT-223 |
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Semelab | HF-MOSFETs | Si | Single Dual Drain | N | Enhancement | 1 | 65 | ±20 | 0.2 | 12(Max)@0V | 0.75 | 2000 | 0 | 2500 | 11(Min) | 4 | SOT-223 | SOT | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| BUZ50A-220M-ISO Fet Devices |
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Semelab | JFETs | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BDS16-QR-B Trans GP BJT NPN 120V 8A 43750mW 3-Pin(3+Tab) TO-220M |
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 120 | 120 | 1 | 5 | 8 | 40@0.5A@2V|15@4A@2V | 2 to 30|30 to 50 | 0.4@0.05A@0.5A|1.5@0.4A@4A | 43750 | 3 | TO-220M | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||
| BSS52 Bipolar Power Transistor |
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Semelab | GP BJT | Unknown | Unknown | Unknown | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BCY70-O-B Bipolar Small Signal GP BJT |
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Semelab | GP BJT | Unknown | Unknown | Unknown | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N2222ACSM-QR-B
Trans GP BJT NPN 50V 0.8A 3-Pin CLLCC-1
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Semelab | GP BJT | NPN | Bipolar Power | Single | 50 | 75 | 1 | 6 | 1.2@15mA@150mA|2@50mA@500mA | 0.8 | 50@0.1mA@10V|75@1mA@10V|100@10mA@10V|100@150mA@10V|30@500mA@10V | 30 to 50|50 to 120 | 250 | 0.3@15mA@150mA|1@50mA@500mA | 500 | 3 | CLLCC-1 | LCC | No | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
| SB16-100M Diode Schottky 100V 16A 3-Pin(3+Tab) TO-257AB |
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Semelab | Gleichrichter | Schottky Diode | Dual Common Cathode | 100 | 16 | 245 | 1 | 500 | 3 | TO-257AB | No | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||
| 2N2222ACSM-B Silicon Switching NPN Transistor |
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Semelab | GP BJT | 3 | CLLCC-1 | LCC | No | No | No | No | No | No |