TT Electronics / Semelab Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Category | Material | Channel Type | Configuration | Channel Mode | Peak Reverse Repetitive Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Number of Elements per Chip | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Peak Reverse Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Operational Bias Conditions | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Power Dissipation - (mW) | Maximum Continuous Drain Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Maximum Junction Case Thermal Resistance | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Frequency - (MHz) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Process Technology | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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ZTX653/753DCSM
NPN/PNP DUAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE
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Semelab | GP BJT | 6 | CLLCC-2 | LCC | No | No | No | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||
BUX23
Trans GP BJT NPN 325V 30A 250000mW 3-Pin(2+Tab) TO-3
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 325 | 400 | 1 | 7 | 1.5@3.2A@16A | 30 | 250000 | 2 to 30 | 12@8A@4V|8@16A@4V | 0.6 | 0.8@1.6A@8A|1@3.2A@16A | 3 | TO-3 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||
2N5416CSM4
Trans GP BJT PNP 300V 1A 1000mW 4-Pin CLLCC-3
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Semelab | GP BJT | PNP | Bipolar Power | Si | Single | 300 | 350 | 1 | 6 | 1 | 150 | 1000 | 30 to 50 | 30@50mA@10V | 25(Max) | 0.5@5mA@50mA | 4 | CLLCC-3 | LCC | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||
| IRFY9140-QR-B Trans MOSFET P-CH 100V 13A 3-Pin(3+Tab) TO-257AB |
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Semelab | MOSFETs | Power MOSFET | P | Single | Enhancement | 1 | 100 | ±20 | 60000 | 13 | 240@10V | 60(Max)@10V | 1400@25V | 3 | TO-257AB | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
2N3720
Trans GP BJT PNP 60V 3A 1000mW 3-Pin TO-39
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Semelab | GP BJT | PNP | Bipolar Power | Single | 60 | 60 | 1 | 4 | 1.5@100mA@1A|2.3@300mA@3A | 3 | 1000 | 2 to 30 | 20@500mA@1.5V|25@1A@1.5V | 0.75@100mA@1A|1.5@300mA@3A | 3 | TO-39 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
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BUY90
Trans GP BJT PNP 60V 3A 20000mW 3-Pin TO-39
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Semelab | GP BJT | PNP | Bipolar Power | Single | 60 | 1 | 3 | 20000 | 30 to 50 | 40@1A@5V | 3 | TO-39 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||
2N2369ACSM-QR-EB
Trans GP BJT NPN 15V 0.2A 360mW 3-Pin CLLCC-1
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Semelab | GP BJT | NPN | Bipolar Small Signal | Si | Single | 15 | 40 | 1 | 4.5 | 0.85@1mA@10mA|0.9@3mA@30mA|1.2@10mA@100mA | 0.2 | 360 | 2 to 30|30 to 50 | 40@10mA@0.35V|40@10mA@1V|30@30mA@0.4V|20@100mA@1V | 0.2@1mA@10mA|0.25@3mA@30mA|0.45@10mA@100mA | 3 | CLLCC-1 | LCC | No | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||
| D1222UK Trans RF MOSFET 40V 30A 5-Pin Case DK |
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Semelab | HF-MOSFETs | Dual Common Source | 2 | 40 | ±20 | 7 | 290000 | 30 | 180(Max)@0V | 10(Min) | 1 | 500 | 5 | Case DK | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||
| 2N3054 Trans GP BJT NPN 55V 4A 25000mW 3-Pin(2+Tab) TO-66 |
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Semelab | GP BJT | NPN | Bipolar Power | Single | 55 | 1 | 4 | 25000 | 2 to 30 | 25@0.5A@4V | 3 | TO-66 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||
| D1027UK Trans RF MOSFET N-CH 70V 30A 5-Pin Case DR |
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Semelab | HF-MOSFETs | Si | N | Dual Common Source | Enhancement | 2 | 70 | ±20 | 438000 | 30 | 360(Max)@28V | 13(Min) | 1 | 150 | 200 | 5 | Case DR | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
2N3799X
Trans GP BJT PNP 50V 0.05A 3-Pin TO-18
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Semelab | GP BJT | PNP | Bipolar Small Signal | Si | Single | 50 | 60 | 1 | 5 | 0.7@10uA@100uA|0.8@100uA@1mA | 0.05 | 360 | 50 to 120|120 to 200|200 to 300|300 to 500 | 75@1uA@5V|225@10uA@5V|300@500uA@5V|300@1mA@5V|250@10mA@5V | 0.2@10uA@100uA|0.25@100uA@1mA | 500 | 4 | 3 | TO-18 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||
| IRFE130 Trans MOSFET N-CH 100V 7.4A 16-Pin LCC-4 |
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Semelab | MOSFETs | Power MOSFET | N | Single Hex Drain Dual Gate Octal Source | Enhancement | 1 | 100 | ±20 | 4 | 22000 | 7.4 | 207@10V | 28.5(Max)@10V | 28.5(Max) | 650@25V | 16 | LCC-4 | LCC | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||
| 2N3879 Trans GP BJT NPN 75V 7A 3-Pin(2+Tab) TO-66 |
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 75 | 120 | 1 | 7 | 2@0.4A@4A | 7 | 35000 | 2 to 30|30 to 50 | 40@0.5A@5V|20@4A@5V|12@4A@2V | 1.2@0.4A@4A | 3 | TO-66 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||
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2N3964
Trans GP BJT PNP 45V 0.2A 360mW 3-Pin TO-18
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Semelab | GP BJT | PNP | Bipolar Power | Single | 45 | 1 | 0.2 | 360 | 200 to 300 | 250@1mA@5V | 3 | TO-18 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||
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BSX52A
Trans GP BJT NPN 50V 0.2A 300mW 3-Pin TO-18
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Semelab | GP BJT | NPN | Bipolar Power | Single | 50 | 1 | 0.2 | 300 | 300 to 500 | 300@2mA@4.5V | 3 | TO-18 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||
| 2N2223 Trans GP BJT NPN 60V 0.5A 600mW 6-Pin TO-77 |
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Semelab | GP BJT | NPN | Bipolar Power | Si | Dual | 60 | 100 | 2 | 7 | 0.9@5mA@50mA | 0.5 | 600 | 2 to 30|30 to 50|50 to 120 | 15@10uA@5V|25@100uA@5V|50@10mA@5V | 15(Max) | 1.2@5mA@50mA | 6 | TO-77 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||
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2N5415CSM4
Trans GP BJT PNP 200V 1A 1000mW 4-Pin CLLCC-3
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Semelab | GP BJT | PNP | Bipolar Power | Si | Single | 200 | 200 | 1 | 4 | 1 | 150 | 1000 | 30 to 50 | 30@50mA@10V | 25(Max) | 0.5@5mA@50mA | 4 | CLLCC-3 | LCC | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||
| IRF9530-220M Trans MOSFET P-CH 100V 9.3A 3-Pin(3+Tab) TO-257AB |
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Semelab | MOSFETs | Power MOSFET | P | Single | Enhancement | 1 | 100 | ±20 | 4 | 45000 | 9.3 | 360@10V | 30(Max)@10V | 30(Max) | 800@25V | 3 | TO-257AB | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
2N2222ADCSM-QR-EB
Trans GP BJT NPN 50V 0.8A 6-Pin CLLCC-2
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Semelab | GP BJT | NPN | Bipolar Power | Single | 50 | 75 | 1 | 6 | 1.2@15mA@150mA|2@50mA@500mA | 0.8 | 500 | 30 to 50|50 to 120 | 50@0.1mA@10V|75@1mA@10V|100@10mA@10V|100@150mA@10V|30@500mA@10V | 0.3@15mA@150mA|1@50mA@500mA | 250 | 6 | CLLCC-2 | LCC | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||
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BFY50
Trans GP BJT NPN 35V 1A 800mW 3-Pin TO-39
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 35 | 80 | 1 | 6 | 2@0.1A@1A | 1 | 2180.75 | 800 | 2 to 30|30 to 50 | 20@10mA@10V|30@150mA@10V|15@1mA@10V | 35 | 12(Max) | 0.2@15mA@150mA|1@0.1A@1A | 3 | TO-39 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||
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2N2222ACSM-QR-EB
Trans GP BJT NPN 50V 0.8A 3-Pin CLLCC-1
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Semelab | GP BJT | NPN | Bipolar Power | Single | 50 | 75 | 1 | 6 | 1.2@15mA@150mA|2@50mA@500mA | 0.8 | 500 | 30 to 50|50 to 120 | 50@0.1mA@10V|75@1mA@10V|100@10mA@10V|100@150mA@10V|30@500mA@10V | 0.3@15mA@150mA|1@50mA@500mA | 250 | 3 | CLLCC-1 | LCC | No | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||
2N2369ADCSM
Trans GP BJT NPN 15V 0.2A 500mW 6-Pin CLLCC-2
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Semelab | GP BJT | NPN | Bipolar Small Signal | Si | Dual | 15 | 40 | 2 | 4.5 | 0.85@1mA@10mA|0.9@3mA@30mA|1.2@10mA@100mA | 0.2 | 486 | 500 | 2 to 30|30 to 50 | 40@10mA@0.35V|40@10mA@1V|30@30mA@0.4V|20@100mA@1V | 0.2@1mA@10mA|0.25@3mA@30mA|0.45@10mA@100mA | 6 | CLLCC-2 | LCC | No | Unknown | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||
2N5153SMD05
Trans GP BJT PNP 80V 5A 1000mW 3-Pin SMD-0.5
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Semelab | GP BJT | PNP | Bipolar Power | Si | Single | 80 | 100 | 1 | 5.5 | 1.45@250mA@2.5A|2.2@500mA@5A | 5 | 150 | 1000 | 30 to 50|50 to 120 | 50@50mA@5V|70@2.5A@5V|35@2.5A@5V | 1.75 | 250(Max) | 0.75@250mA@2.5A|1.5@500mA@5A | 3 | SMD-0.5 | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||
| BDS19 Trans GP BJT PNP 150V 8A 43750mW 3-Pin(3+Tab) TO-257AB |
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Semelab | GP BJT | PNP | Bipolar Power | Si | Single | 150 | 150 | 1 | 5 | 8 | 43750 | 2 to 30|30 to 50 | 40@0.5A@2V|15@4A@2V | 0.4@0.05A@0.5A|1.5@0.4A@4A | 3 | TO-257AB | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| BSS52 Bipolar Power Transistor |
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Semelab | GP BJT | Unknown | Unknown | Unknown | No | No |