TT Electronics / Semelab Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Category | Material | Channel Type | Configuration | Channel Mode | Peak Reverse Repetitive Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Number of Elements per Chip | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Peak Reverse Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Operational Bias Conditions | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Power Dissipation - (mW) | Maximum Continuous Drain Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Maximum Junction Case Thermal Resistance | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Frequency - (MHz) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Process Technology | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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| BDX65C BIPOLAR NPN DARLINGTON DEVICE |
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Semelab | Darlington BJT | 3 | TO-3 | TO | No | No | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||
| BUV42 Trans GP BJT NPN 250V 12A 120000mW 3-Pin(2+Tab) TO-3 |
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Semelab | GP BJT | NPN | Bipolar Power | Single | 250 | 1 | 12 | 120000 | 3 | TO-3 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||
| BYV32-200M-QR-B HERMETICALLY SEALED DUAL FAST RECOVERY SILICON RECTIFIER FOR HI-REL APPLICATIONS |
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Semelab | Gleichrichter | 3 | TO-257AB | No | No | No | No | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRFY340-QR-B N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS |
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Semelab | MOSFETs | 3 | TO-257AB | No | No | No | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||
| D2211UK Trans RF MOSFET 40V 16A 8-Pin DBC1 |
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Semelab | HF-MOSFETs | Si | Single Dual Drain Dual Gate Quad Source | 1 | 40 | ±20 | 7 | 70000 | 16 | 96(Max)@0V | 7(Min) | 1 | 2000 | 8 | DBC1 | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
2N2222ACSM-QR-B
Trans GP BJT NPN 50V 0.8A 3-Pin CLLCC-1
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Semelab | GP BJT | NPN | Bipolar Power | Single | 50 | 75 | 1 | 6 | 1.2@15mA@150mA|2@50mA@500mA | 0.8 | 500 | 30 to 50|50 to 120 | 50@0.1mA@10V|75@1mA@10V|100@10mA@10V|100@150mA@10V|30@500mA@10V | 0.3@15mA@150mA|1@50mA@500mA | 250 | 3 | CLLCC-1 | LCC | No | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||
| IRFE024 Trans MOSFET N-CH 60V 6.7A 16-Pin LCC-4 |
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Semelab | MOSFETs | Power MOSFET | N | Single Hex Drain Dual Gate Octal Source | Enhancement | 1 | 60 | ±20 | 4 | 14000 | 6.7 | 170@10V | 26(Max)@10V | 26(Max) | 640@25V | 16 | LCC-4 | LCC | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
BUP54
Trans GP BJT NPN 275V 50A 3-Pin(2+Tab) TO-3
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 275 | 1 | 10 | 1.2@2A@20A|1.3@4A@40A | 50 | 300000 | 2 to 30 | 20@16A@4V|10@35A@4V | 0.6@2A@20A|1@5.5A@40A | 3 | TO-3 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
2N3700DCSM-QR-B
HIGH VOLTAGE MEDIUM POWER NPN DUAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE
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Semelab | GP BJT | Si | 6 | CLLCC-2 | LCC | No | No | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||
2N2222A-QR-B
Trans GP BJT NPN 50V 0.8A 500mW 3-Pin TO-18
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Semelab | GP BJT | NPN | Bipolar Small Signal | Single | 50 | 75 | 1 | 6 | 1.2@15mA@150mA|2@50mA@500mA | 0.8 | 500 | 30 to 50|50 to 120 | 35@0.1mA@10V|50@1mA@1V|75@10mA@10V|100@150mA@10V|50@150mA@1V|40@500mA@10V | 0.3@15mA@150mA|1@50mA@500mA | 250 | 3 | TO-18 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||
| 2N5881 Trans GP BJT NPN 60V 15A 160000mW 3-Pin(2+Tab) TO-3 |
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Semelab | GP BJT | NPN | Bipolar Power | Single | 60 | 1 | 15 | 160000 | 2 to 30 | 20@6A@4V | 3 | TO-3 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||
| 2N2857.02SML Trans RF BJT NPN 15V 0.04A 200mW 4-Pin TO-72 |
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Semelab | HF-BJT | NPN | Si | Single | 15 | 30 | 1 | 2.5 | 0.04 | 10V/12mA | 200 | 30 to 50 | 30@3mA@1V | 19(Max) | 0.03(Min) | 1900 | 4.5 | 4 | TO-72 | TO | No | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||
| IRFY430 Trans MOSFET N-CH 500V 4.5A 3-Pin(3+Tab) TO-257AB |
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Semelab | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 500 | ±20 | 4 | 75000 | 4.5 | 1840@10V | 29.5(Max)@10V | 29.5(Max) | 610@25V | 3 | TO-257AB | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
| 2N6077-QR-B Trans GP BJT NPN 275V 7A 45000mW 3-Pin(2+Tab) TO-66 |
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Semelab | GP BJT | NPN | Bipolar Power | Single | 275 | 1 | 7 | 45000 | 2 to 30 | 12@1.2A@1V | 3 | TO-66 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||
| BDY26B Trans GP BJT NPN 180V 6A 50000mW 3-Pin(2+Tab) TO-3 |
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 180 | 300 | 1 | 10 | 1.2@0.25A@2A | 6 | 50000 | 30 to 50 | 30@2A@4V | 3.5 | 120(Max) | 0.6@0.25A@2A | 3 | TO-3 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||
2N6796-JQR-B
TMOS FET ENHANCEMENT N - CHANNEL
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Semelab | MOSFETs | 3 | TO-39 | TO | No | Unknown | No | No | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||
| BDY28B Trans GP BJT NPN 250V 6A 50000mW 3-Pin(2+Tab) TO-3 |
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Semelab | GP BJT | NPN | Bipolar Power | Single | 250 | 500 | 1 | 10 | 1.2@0.25A@2A | 6 | 50000 | 30 to 50 | 30@2A@4V | 3.5 | 65 | 0.6@0.25A@2A | 3 | TO-3 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||
2N3055
Trans GP BJT NPN 60V 15A 115000mW 3-Pin(2+Tab) TO-3
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 60 | 100 | 1 | 7 | 15 | 115000 | 2 to 30 | 20@4A@4V | 0.75@0.4A@4A|2@3.3A@10A | 3 | TO-3 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
| D1211UKTR Trans RF MOSFET N-CH 40V 10A 8-Pin SO |
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Semelab | HF-MOSFETs | Si | N | Single Dual Drain Dual Gate Quad Source | Enhancement | 1 | 40 | ±20 | 30000 | 10 | 60(Max)@0V | 10(Min) | 1 | 10 | 1000 | 8 | SO | SO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
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2N3700CSM
Trans GP BJT NPN 80V 1A 3-Pin CLLCC-1
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 80 | 140 | 1 | 7 | 1.1@15mA@150mA | 1 | 500 | 2 to 30|30 to 50|50 to 120 | 50@0.1mA@10V|90@10mA@10V|100@150mA@10V|50@500mA@10V|15@1A@10V | 0.2@15mA@150mA|0.5@50mA@500mA | 3 | CLLCC-1 | LCC | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
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2N2907ACSM-QR-B
Trans GP BJT PNP 60V 0.6A 3-Pin CLLCC-1
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Semelab | GP BJT | PNP | Bipolar Small Signal | Si | Single | 60 | 60 | 1 | 5 | 1.3@15mA@150mA|2.6@50mA@500mA | 0.6 | 500 | 50 to 120 | 75@0.1mA@10V|100@1mA@10V|100@10mA@10V|100@150mA@10V|50@500mA@10V | 0.4@15mA@150mA|1.6@50mA@500mA | 3 | CLLCC-1 | LCC | No | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||
| BDX63A-QR-B NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR |
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Semelab | Darlington BJT | 3 | TO-3 | TO | No | No | No | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3584 Trans GP BJT NPN 250V 2A 35000mW 3-Pin(2+Tab) TO-66 |
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Semelab | GP BJT | NPN | Bipolar Power | Single | 250 | 1 | 2 | 35000 | 2 to 30 | 25@1A@10V | 3 | TO-66 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||
| BUZ50A-220M-ISO Fet Devices |
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Semelab | JFETs | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SB16-45M-B Dual Schottky Barrier Diode |
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Semelab | Gleichrichter | Schottky Diode | Dual Common Cathode | 45 | 16 | 245 | 0.8 | 500 | Unknown | Unknown | Unknown | No | No |