TT Electronics / Semelab Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Category | Material | Channel Type | Configuration | Channel Mode | Peak Reverse Repetitive Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Number of Elements per Chip | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Peak Reverse Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Operational Bias Conditions | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Power Dissipation - (mW) | Maximum Continuous Drain Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Maximum Junction Case Thermal Resistance | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Frequency - (MHz) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Process Technology | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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| BDS12 Trans GP BJT NPN 100V 15A 43750mW 3-Pin(3+Tab) TO-257AB |
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 100 | 100 | 1 | 5 | 2.5@2.5A@10A | 15 | 43750 | 2 to 30|30 to 50 | 40@0.5A@4V|15@5A@4V|5@10A@4V | 1@0.5A@5A|3@2.5A@10A | 3 | TO-257AB | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
| IRFY9130 Trans MOSFET P-CH 100V 9.3A 3-Pin(3+Tab) TO-257AB |
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Semelab | MOSFETs | Power MOSFET | P | Single | Enhancement | 1 | 100 | ±20 | 4 | 45000 | 9.3 | 360@10V | 30(Max)@10V | 30(Max) | 800@25V | 3 | TO-257AB | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
| BDS13 Trans GP BJT PNP 60V 15A 43750mW 3-Pin(3+Tab) TO-257AB |
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Semelab | GP BJT | PNP | Bipolar Power | Si | Single | 60 | 60 | 1 | 5 | 2.5@2.5A@10A | 15 | 43750 | 2 to 30|30 to 50 | 40@0.5A@4V|15@5A@4V|5@10A@4V | 1@0.5A@5A|3@2.5A@10A | 3 | TO-257AB | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
| BDX64B BIPOLAR PNP DEVICE IN A HERMETICALLY SEALED TO3 METAL PACKAGE |
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Semelab | Darlington BJT | 3 | TO-3 | TO | No | No | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||
| 2N4036 Transistor BJT |
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Semelab | GP BJT | Unknown | Unknown | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| BDX67A Trans Darlington NPN 80V 16A 150000mW 3-Pin(2+Tab) TO-3 |
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Semelab | Darlington BJT | NPN | Single | 80 | 100 | 1 | 16 | 5 | 150000 | 1000@10A@3V | 2@40mA@10A | 3 | TO-3 | TO | No | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
2N2369A
Trans GP BJT NPN 15V 0.2A 3-Pin TO-18
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Semelab | GP BJT | NPN | Bipolar Small Signal | Single | 15 | 40 | 1 | 4.5 | 0.85@1mA@10mA|0.9@3mA@30mA|1.2@10mA@100mA | 0.2 | 486 | 360 | 2 to 30|30 to 50 | 40@10mA@0.35V|40@10mA@1V|30@30mA@0.4V|20@100mA@1V | 208.3 | 4(Max) | 0.2@1mA@10mA|0.25@3mA@30mA|0.45@10mA@100mA | 3 | TO-18 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||
2N6796-JQR-B
TMOS FET ENHANCEMENT N - CHANNEL
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Semelab | MOSFETs | 3 | TO-39 | TO | No | Unknown | No | No | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||
2N3055
Trans GP BJT NPN 60V 15A 115000mW 3-Pin(2+Tab) TO-3
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 60 | 100 | 1 | 7 | 15 | 115000 | 2 to 30 | 20@4A@4V | 0.75@0.4A@4A|2@3.3A@10A | 3 | TO-3 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
| D1211UKTR Trans RF MOSFET N-CH 40V 10A 8-Pin SO |
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Semelab | HF-MOSFETs | Si | N | Single Dual Drain Dual Gate Quad Source | Enhancement | 1 | 40 | ±20 | 30000 | 10 | 60(Max)@0V | 10(Min) | 1 | 10 | 1000 | 8 | SO | SO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
2N3700CSM
Trans GP BJT NPN 80V 1A 3-Pin CLLCC-1
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 80 | 140 | 1 | 7 | 1.1@15mA@150mA | 1 | 500 | 2 to 30|30 to 50|50 to 120 | 50@0.1mA@10V|90@10mA@10V|100@150mA@10V|50@500mA@10V|15@1A@10V | 0.2@15mA@150mA|0.5@50mA@500mA | 3 | CLLCC-1 | LCC | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
BUP54
Trans GP BJT NPN 275V 50A 3-Pin(2+Tab) TO-3
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 275 | 1 | 10 | 1.2@2A@20A|1.3@4A@40A | 50 | 300000 | 2 to 30 | 20@16A@4V|10@35A@4V | 0.6@2A@20A|1@5.5A@40A | 3 | TO-3 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
| BDY26B Trans GP BJT NPN 180V 6A 50000mW 3-Pin(2+Tab) TO-3 |
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 180 | 300 | 1 | 10 | 1.2@0.25A@2A | 6 | 50000 | 30 to 50 | 30@2A@4V | 3.5 | 120(Max) | 0.6@0.25A@2A | 3 | TO-3 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||
| IRFY430 Trans MOSFET N-CH 500V 4.5A 3-Pin(3+Tab) TO-257AB |
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Semelab | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 500 | ±20 | 4 | 75000 | 4.5 | 1840@10V | 29.5(Max)@10V | 29.5(Max) | 610@25V | 3 | TO-257AB | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
| BDY28B Trans GP BJT NPN 250V 6A 50000mW 3-Pin(2+Tab) TO-3 |
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Semelab | GP BJT | NPN | Bipolar Power | Single | 250 | 500 | 1 | 10 | 1.2@0.25A@2A | 6 | 50000 | 30 to 50 | 30@2A@4V | 3.5 | 65 | 0.6@0.25A@2A | 3 | TO-3 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||
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2N2907ACSM-QR-B
Trans GP BJT PNP 60V 0.6A 3-Pin CLLCC-1
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Semelab | GP BJT | PNP | Bipolar Small Signal | Si | Single | 60 | 60 | 1 | 5 | 1.3@15mA@150mA|2.6@50mA@500mA | 0.6 | 500 | 50 to 120 | 75@0.1mA@10V|100@1mA@10V|100@10mA@10V|100@150mA@10V|50@500mA@10V | 0.4@15mA@150mA|1.6@50mA@500mA | 3 | CLLCC-1 | LCC | No | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||
2N6661
Trans MOSFET N-CH 90V 0.9A 3-Pin TO-39
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Semelab | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 90 | ±20 | 2 | 725 | 0.9 | 4000@10V | 50(Max)@25V | 3 | TO-39 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
| BDX62B BIPOLAR PNP DEVICE IN A HERMETICALLY SEALED TO3 METAL PACKAGE |
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Semelab | Darlington BJT | 3 | TO-3 | TO | No | No | No | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||
| BDX63A-QR-B NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR |
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Semelab | Darlington BJT | 3 | TO-3 | TO | No | No | No | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||
| D1212UK Trans RF MOSFET 40V 30A 5-Pin Case DH |
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Semelab | HF-MOSFETs | Si | Dual Common Source | 2 | 40 | ±20 | 7 | 290000 | 30 | 180(Max)@0V | 10(Min) | 1 | 500 | 5 | Case DH | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| BDY90 Trans GP BJT NPN 100V 10A 70000mW 3-Pin(2+Tab) TO-3 |
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Semelab | GP BJT | NPN | Bipolar Power | Single | 100 | 1 | 10 | 70000 | 30 to 50 | 30@5A@5V | 3 | TO-3 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||
| SB16-45M-B Dual Schottky Barrier Diode |
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Semelab | Gleichrichter | Schottky Diode | Dual Common Cathode | 45 | 16 | 245 | 0.8 | 500 | Unknown | Unknown | Unknown | No | No | ||||||||||||||||||||||||||||||||||||||||||||||
| BUZ50A-220M-ISO Fet Devices |
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Semelab | JFETs | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3584 Trans GP BJT NPN 250V 2A 35000mW 3-Pin(2+Tab) TO-66 |
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Semelab | GP BJT | NPN | Bipolar Power | Single | 250 | 1 | 2 | 35000 | 2 to 30 | 25@1A@10V | 3 | TO-66 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||
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2N2907ACSM-JQR-B
Trans GP BJT PNP 60V 0.6A 3-Pin CLLCC-1
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Semelab | GP BJT | PNP | Bipolar Small Signal | Si | Single | 60 | 60 | 1 | 5 | 1.3@15mA@150mA|2.6@50mA@500mA | 0.6 | 500 | 50 to 120 | 75@0.1mA@10V|100@1mA@10V|100@10mA@10V|100@150mA@10V|50@500mA@10V | 0.4@15mA@150mA|1.6@50mA@500mA | 3 | CLLCC-1 | LCC | No | Unknown | No | No | No | No | EAR99 | No | No |