TT Electronics / Semelab Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Category | Material | Channel Type | Configuration | Channel Mode | Peak Reverse Repetitive Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Number of Elements per Chip | Maximum Continuous Forward Current - (mA) | Maximum Collector-Base Voltage - (V) | Maximum Drain-Gate Voltage - (V) | Maximum Base-Emitter Voltage - (V) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Peak Reverse Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Continuous DC Collector Current - (A) | Operational Bias Conditions | Maximum Gate Threshold Voltage - (V) | Maximum Continuous Drain Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Maximum Junction Ambient Thermal Resistance | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Typical Power Gain - (dB) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Process Technology | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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2N2222ACSM4
Trans GP BJT NPN 40V 0.8A 350mW 4-Pin CLLCC-3
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Semelab | GP BJT | NPN | Bipolar Small Signal | Si | Single | 40 | 1 | 75 | 6 | 1.2@15mA@150mA|2@50mA@500mA | 0.8 | 30 to 50|50 to 120 | 35@0.1mA@10V|50@1mA@10V|75@10mA@10V|100@150mA@10V|40@500mA@10V|50@150mA@1V | 30(Max) | 350 | 0.3@15mA@150mA|1@50mA@500mA | 8(Max) | 4 | CLLCC-3 | LCC | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||
2N5153SMD05
Trans GP BJT PNP 80V 5A 1000mW 3-Pin SMD-0.5
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Semelab | GP BJT | PNP | Bipolar Power | Si | Single | 80 | 1 | 100 | 5.5 | 1.45@250mA@2.5A|2.2@500mA@5A | 5 | 30 to 50|50 to 120 | 50@50mA@5V|70@2.5A@5V|35@2.5A@5V | 150 | 1.75 | 1000 | 0.75@250mA@2.5A|1.5@500mA@5A | 250(Max) | 500(Typ) | 3 | SMD-0.5 | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||
| 2N7086-QR-B N-CHANNEL ENHANCEMENT MODE TRANSISTOR |
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Semelab | MOSFETs | 3 | TO-257AB | No | No | No | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||
| BDS16 Trans GP BJT NPN 120V 8A 43750mW 3-Pin(3+Tab) TO-257AB |
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 120 | 1 | 120 | 5 | 8 | 30 to 50|2 to 30 | 40@0.5A@2V|15@4A@2V | 43750 | 1.5@0.4A@4A|0.4@0.05A@0.5A | 500 | 3 | TO-257AB | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
BUP52
Trans GP BJT NPN 200V 70A 3-Pin(2+Tab) TO-3
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 200 | 1 | 10 | 1.1@2A@20A|1.2@4A@40A|1.5@14A@70A | 70 | 2 to 30 | 20@20A@4V|12@40A@4V|8@70A@4V | 300000 | 0.5@2A@20A|0.6@4A@40A|0.9@14A@70A | 50 | 3 | TO-3 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
| BUX43 Trans GP BJT NPN 325V 10A 120000mW 3-Pin(2+Tab) TO-3 |
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Semelab | GP BJT | NPN | Bipolar Power | Single | 325 | 1 | 10 | 2 to 30 | 15@3A@4V | 120000 | 3 | TO-3 | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||
BUX50-QR
Bipolar NPN Device in A Hermetically Sealed TO-39 Metal Package
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Semelab | GP BJT | 3 | TO-39 | TO | No | No | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||
| BYV34-400TM HERMETICALLY SEALED DUAL FAST RECOVERY SILICON RECTIFIER FOR HI-REL APPLICATIONS |
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Semelab | Gleichrichter | 3 | TO-257AB | No | No | No | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||
| D1217UK Trans RF MOSFET N-CH 40V 20A 8-Pin Case DD |
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Semelab | HF-MOSFETs | Si | N | Dual Common Source | Enhancement | 2 | 40 | ±20 | 7 | 20 | 175000 | 120(Max)@0V | 1 | 10(Min) | 8 | Case DD | No | No | No | No | No | 5A991g. | No | No | ||||||||||||||||||||||||||||||||||||
| D2007UK Trans RF MOSFET 70V 2A 4-Pin Case DA |
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Semelab | HF-MOSFETs | Si | Single Dual Source | 1 | 70 | ±20 | 2 | 29000 | 20(Max)@0V | 5 | 13(Min) | 4 | Case DA | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||
| IRFY240-QR-B Trans MOSFET N-CH 200V 12A 3-Pin(3+Tab) TO-257AB |
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Semelab | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 200 | ±20 | 4 | 12 | 220@10V | 60@10V | 60 | 60000 | 1300@25V | 3 | TO-257AB | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
| D1020UK.08 Trans RF MOSFET N-CH 70V 25A 5-Pin Case DR |
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Semelab | HF-MOSFETs | Si | N | Dual Common Source | Enhancement | 2 | 70 | ±20 | 25 | 389000 | 300(Max)@28V | 1 | 150 | 10(Min) | 5 | Case DR | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| D2081UK.FTR Trans RF MOSFET N-CH 65V 0.2A 4-Pin(3+Tab) SOT-223 |
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Semelab | HF-MOSFETs | Si | N | Single Dual Drain | Enhancement | 1 | 65 | ±20 | 0.2 | 2000 | 12(Max)@0V | 0 | 0.75 | 11(Min) | 4 | SOT-223 | SOT | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
| BDS19-QR-B Bipolar Pnp Device In A Hermetically Sealed Ceramic Surface Mount Package |
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Semelab | GP BJT | 3 | TO-220M | No | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| BDS21-QR-EB Trans GP BJT PNP 80V 5A 3-Pin(3+Tab) TO-257AB |
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Semelab | GP BJT | PNP | Bipolar Power | Si | Single | 80 | 1 | 80 | 5 | 5 | 500 to 3600 | 1000@0.5A@3V|1000@3A@3V | 35000 | 2@12mA@3A|4@20mA@5A | 3 | TO-257AB | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| BDY90 Trans GP BJT NPN 100V 10A 70000mW 3-Pin(2+Tab) TO-3 |
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Semelab | GP BJT | NPN | Bipolar Power | Single | 100 | 1 | 10 | 30 to 50 | 30@5A@5V | 70000 | 3 | TO-3 | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||
| D2241UK RF MOSFET, RF VDMOS Power |
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Semelab | HF-MOSFETs | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMD1029-A Trans RF MOSFET N-CH 70V 35A 5-Pin Case D1 |
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Semelab | HF-MOSFETs | Si | N | Dual Common Source | Enhancement | 2 | 70 | ±20 | 7 | 35 | 438000 | 420(Max)@28V | 1 | 16(Min) | 5 | Case D1 | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
2N2907A-QR-B
Trans GP BJT PNP 60V 0.6A 400mW 3-Pin TO-18
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Semelab | GP BJT | PNP | Bipolar Small Signal | Si | Single | 60 | 1 | 60 | 5 | 1.3@15mA@150mA|2.6@50mA@500mA | 0.6 | 50 to 120 | 75@0.1mA@10V|100@1mA@10V|100@10mA@10V|100@150mA@10V|50@500mA@10V | 400 | 0.4@15mA@150mA|1.6@50mA@500mA | 45 | 3 | TO-18 | TO | No | No | No | No | No | No | No | ||||||||||||||||||||||||||||||||||
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2N3440-JQR-B
Trans GP BJT NPN 250V 1A 5000mW 3-Pin TO-39
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 250 | 1 | 300 | 7 | 1.3@4mA@50mA | 1 | 30 to 50 | 40@20mA@10V | 175 | 35 | 5000 | 0.5@4mA@50mA | 10(Max) | 3 | TO-39 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||
| 2N2896X Trans GP BJT NPN 90V 1A 500mW 3-Pin TO-18 |
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Semelab | GP BJT | NPN | Bipolar Small Signal | Si | Single | 90 | 1 | 140 | 7 | 1.2@15mA@150mA | 1 | 30 to 50|50 to 120 | 35@1mA@10V|60@150mA@10V | 350 | 97 | 80(Max) | 500 | 0.6@15mA@150mA | 15(Max) | 3 | TO-18 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||
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BCY71-QR-B
GENERAL PURPOSE PNP SILICON TRANSISTOR
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Semelab | GP BJT | Si | 3 | TO-18 | TO | No | No | No | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||
BDS20SMD
Trans GP BJT NPN 80V 5A 3-Pin SMD-1
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 80 | 1 | 80 | 5 | 5 | 500 to 3600 | 1000@0.5A@3V|1000@3A@3V | 35000 | 2@12mA@3A|4@20mA@5A | 3 | SMD-1 | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
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BFY50
Trans GP BJT NPN 35V 1A 800mW 3-Pin TO-39
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 35 | 1 | 80 | 6 | 2@0.1A@1A | 1 | 30 to 50|2 to 30 | 15@1mA@10V|30@150mA@10V|20@10mA@10V | 2180.75 | 35 | 800 | 1@0.1A@1A|0.2@15mA@150mA | 12(Max) | 3 | TO-39 | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||
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BFX29
Trans GP BJT PNP 60V 0.6A 600mW 3-Pin TO-39
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Semelab | GP BJT | PNP | Bipolar Small Signal | Si | Single | 60 | 1 | 60 | 5 | 0.9@1mA@30mA|1.3@15mA@150mA | 0.6 | 50 to 120|2 to 30|30 to 50 | 20@0.1mA@10V|40@1mA@10V|50@10mA@10V|50@50mA@10V|40@150mA@10V | 600 | 0.4@15mA@150mA | 3 | TO-39 | TO | No | No | No | No | EAR99 | No | No |