TT Electronics / Semelab Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Material | Category | Channel Type | Configuration | Channel Mode | Peak Reverse Repetitive Voltage - (V) | Number of Elements per Chip | Maximum Collector-Emitter Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Maximum Continuous Forward Current - (A) | Maximum Continuous DC Collector Current - (mA) | Maximum Collector-Base Voltage - (V) | Maximum Drain-Gate Voltage - (V) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Power Dissipation - (mW) | Maximum Drain-Source Voltage - (V) | Maximum Continuous Drain Current - (mA) | Maximum Base-Emitter Voltage - (V) | Maximum Gate-Source Voltage - (V) | Maximum Forward Voltage - (V) | Maximum DC Collector Current - (A) | Peak Reverse Current - (uA) | Operational Bias Conditions | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Transition Frequency - (MHz) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Frequency - (MHz) | Typical Power Gain - (dB) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Process Technology | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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| D1222UK Trans RF MOSFET 40V 30A 5-Pin Case DK |
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Semelab | HF-MOSFETs | Dual Common Source | 2 | 290000 | 40 | 30 | ±20 | 7 | 180(Max)@0V | 1 | 500 | 10(Min) | 5 | Case DK | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||
| D2006UK Trans RF MOSFET 65V 5-Pin Case DK |
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Semelab | HF-MOSFETs | Si | Dual Common Source | 2 | 70000 | 65 | ±20 | 7 | 36(Max)@0V | 2000 | 13(Min) | 5 | Case DK | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||
| D2219UKTR Trans RF MOSFET N-CH 40V 2A |
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Semelab | HF-MOSFETs | Si | N | Dual Quad Source | Enhancement | 2 | 17500 | 40 | 2 | ±20 | 12(Max)@0V | 1 | 2.5 | 1000 | 10(Min) | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||
| BDY28B Trans GP BJT NPN 250V 6A 50000mW 3-Pin(2+Tab) TO-3 |
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Semelab | GP BJT | NPN | Bipolar Power | Single | 1 | 250 | 1.2@0.25A@2A | 500 | 50000 | 10 | 6 | 30 to 50 | 30@2A@4V | 3.5 | 65 | 0.6@0.25A@2A | 1000 | 3 | TO-3 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||
2N3501CSM4-JQR-B
Trans GP BJT NPN 150V 0.3A 500mW 4-Pin CLLCC-3
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Semelab | GP BJT | NPN | Si | Bipolar Small Signal | Single | 1 | 150 | 0.8@1mA@10mA|0.9@5mA@50mA|1.2@15mA@150mA | 150 | 500 | 6 | 0.3 | 350 | 2 to 30|30 to 50|50 to 120 | 35@0.1mA@10V|50@1mA@10V|75@10mA@10V|100@150mA@10V|20@300mA@10V | 80(Max) | 8(Max) | 0.2@1mA@10mA|0.25@5mA@50mA|0.4@15mA@150mA | 4 | CLLCC-3 | LCC | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||
2N5153
Trans GP BJT PNP 80V 5A 3-Pin TO-39
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Semelab | GP BJT | PNP | Si | Bipolar Power | Single | 1 | 80 | 1.45@250mA@2.5A|2.2@500mA@5A | 100 | 1000 | 5.5 | 5 | 30 to 50|50 to 120 | 50@50mA@5V|70@2.5A@5V|35@2.5A@5V | 0.75@250mA@2.5A|1.5@500mA@5A | 3 | TO-39 | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| 2N5153-220M Trans GP BJT NPN 80V 5A 4400mW 3-Pin(3+Tab) TO-257AB |
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Semelab | GP BJT | NPN | Si | Bipolar Power | Single | 1 | 80 | 1.45@250mA@2.5A|2.2@500mA@5A | 100 | 4400 | 5.5 | 5 | 40 | 30 to 50|50 to 120 | 40@5A@5V|70@2.5A@5V|50@50mA@5V | 7 | 250(Max) | 0.75@250mA@2.5A|1.5@500mA@5A | 500(Typ) | 3 | TO-257AB | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||
| 2N6250 Trans GP BJT NPN 275V 10A 100000mW 3-Pin(2+Tab) TO-3 |
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Semelab | GP BJT | NPN | Bipolar Power | Single | 1 | 275 | 100000 | 10 | 2 to 30 | 8@10A@3V | 3 | TO-3 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||
2N2369A
Trans GP BJT NPN 15V 0.2A 3-Pin TO-18
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Semelab | GP BJT | NPN | Bipolar Small Signal | Single | 1 | 15 | 0.85@1mA@10mA|0.9@3mA@30mA|1.2@10mA@100mA | 40 | 360 | 4.5 | 0.2 | 486 | 2 to 30|30 to 50 | 40@10mA@0.35V|40@10mA@1V|30@30mA@0.4V|20@100mA@1V | 208.3 | 5(Max) | 4(Max) | 0.2@1mA@10mA|0.25@3mA@30mA|0.45@10mA@100mA | 12 | 3 | TO-18 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||
2N6796-JQR-B
TMOS FET ENHANCEMENT N - CHANNEL
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Semelab | MOSFETs | 3 | TO-39 | TO | No | Unknown | No | No | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||
| BDS10 Trans GP BJT NPN 60V 15A 43750mW 3-Pin(3+Tab) TO-257AB |
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Semelab | GP BJT | NPN | Si | Bipolar Power | Single | 1 | 60 | 2.5@2.5A@10A | 60 | 43750 | 5 | 15 | 2 to 30|30 to 50 | 40@0.5A@4V|15@5A@4V|5@10A@4V | 1@0.5A@5A|3@2.5A@10A | 3 | TO-257AB | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||
BUP49
Trans GP BJT NPN 80V 90A 3-Pin(2+Tab) TO-3
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Semelab | GP BJT | NPN | Bipolar Power | Single | 1 | 80 | 300000 | 90 | 2 to 30 | 15@80A@4V | 3 | TO-3 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||
| IRFY120-QR-B N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS |
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Semelab | MOSFETs | 3 | TO-257AB | No | No | No | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFY9130-QR-B Trans MOSFET P-CH 100V 9.3A 3-Pin(3+Tab) TO-257AB |
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Semelab | MOSFETs | Power MOSFET | P | Single | Enhancement | 1 | 45000 | 100 | 9.3 | ±20 | 360@10V | 30(Max)@10V | 800@25V | 3 | TO-257AB | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||
| SML10SIC06YC Diode Schottky 600V 10A 3-Pin(3+Tab) TO-257AA |
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Semelab | Gleichrichter | Schottky Diode | Dual Common Cathode | 600 | 10 | 250 | 100000 | 1.8 | 50 | 3 | TO-257AA | TO | No | No | No | No | No | 3A001.h | No | No | |||||||||||||||||||||||||||||||||||||||||
ZTX653/753DCSM
NPN/PNP DUAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE
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Semelab | GP BJT | 6 | CLLCC-2 | LCC | No | No | No | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||
| BDX62B BIPOLAR PNP DEVICE IN A HERMETICALLY SEALED TO3 METAL PACKAGE |
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Semelab | Darlington BJT | 3 | TO-3 | TO | No | No | No | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||
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SML0505FN
Trans MOSFET N-CH 50V 16A 3-Pin TO-39
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Semelab | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 25000 | 50 | 16 | ±20 | 4 | 50@10V | 1500@25V | 3 | TO-39 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||
| D2210UK Trans RF MOSFET N-CH 40V 16A 3-Pin Case DP |
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Semelab | HF-MOSFETs | Si | N | Single | Enhancement | 1 | 70000 | 40 | 16 | ±20 | 7 | 96(Max)@12.5V | 0 | 1000 | 10(Min) | 3 | Case DP | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| IRFY340-QR-B N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS |
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Semelab | MOSFETs | 3 | TO-257AB | No | No | No | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||
| D2282UK Trans RF MOSFET N-CH 40V 0.4A 4-Pin(3+Tab) SOT-223 |
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Semelab | HF-MOSFETs | Si | N | Single Dual Drain | Enhancement | 1 | 2000 | 40 | 0.4 | ±20 | 12(Max)@0V | 0 | 0.75 | 2500 | 8(Min) | 4 | SOT-223 | SOT | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
| D1021UK Trans RF MOSFET N-CH 70V 20A 5-Pin Case DK |
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Semelab | HF-MOSFETs | Si | N | Dual Common Source | Enhancement | 2 | 35000 | 70 | 20 | ±20 | 240(Max)@28V | 1 | 125 | 400 | 13(Min) | 5 | Case DK | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| D1212UK Trans RF MOSFET 40V 30A 5-Pin Case DH |
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Semelab | HF-MOSFETs | Si | Dual Common Source | 2 | 290000 | 40 | 30 | ±20 | 7 | 180(Max)@0V | 1 | 500 | 10(Min) | 5 | Case DH | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||
| D2010UK Trans RF MOSFET 65V 8A 3-Pin Case DP |
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Semelab | HF-MOSFETs | Si | Single | 1 | 83000 | 65 | 8 | ±20 | 96(Max)@0V | 50 | 20 | 1000 | 10(Min) | 3 | Case DP | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||
| D5017UK Trans RF MOSFET N-CH 125V 18A 4-Pin Case DM |
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Semelab | HF-MOSFETs | Si | N | Single Dual Source | Enhancement | 1 | 220000 | 125 | 18 | ±20 | 360(Max)@50V | 1 | 150 | 175 | 10(Min) | 4 | Case DM | No | No | No | No | No | EAR99 | No | No |