TT Electronics / Semelab Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Category | Material | Channel Type | Configuration | Channel Mode | Peak Reverse Repetitive Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Number of Elements per Chip | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Peak Reverse Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Operational Bias Conditions | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Power Dissipation - (mW) | Maximum Continuous Drain Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Maximum Junction Case Thermal Resistance | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Frequency - (MHz) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Process Technology | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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| D1212UK Trans RF MOSFET 40V 30A 5-Pin Case DH |
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Semelab | HF-MOSFETs | Si | Dual Common Source | 2 | 40 | ±20 | 7 | 290000 | 30 | 180(Max)@0V | 10(Min) | 1 | 500 | 5 | Case DH | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| D2010UK Trans RF MOSFET 65V 8A 3-Pin Case DP |
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Semelab | HF-MOSFETs | Si | Single | 1 | 65 | ±20 | 83000 | 8 | 96(Max)@0V | 10(Min) | 50 | 20 | 1000 | 3 | Case DP | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| D5017UK Trans RF MOSFET N-CH 125V 18A 4-Pin Case DM |
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Semelab | HF-MOSFETs | Si | N | Single Dual Source | Enhancement | 1 | 125 | ±20 | 220000 | 18 | 360(Max)@50V | 10(Min) | 1 | 150 | 175 | 4 | Case DM | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
2N2222ACSM4
Trans GP BJT NPN 40V 0.8A 350mW 4-Pin CLLCC-3
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Semelab | GP BJT | NPN | Bipolar Small Signal | Si | Single | 40 | 75 | 1 | 6 | 1.2@15mA@150mA|2@50mA@500mA | 0.8 | 350 | 30 to 50|50 to 120 | 35@0.1mA@10V|50@1mA@10V|75@10mA@10V|100@150mA@10V|40@500mA@10V|50@150mA@1V | 8(Max) | 0.3@15mA@150mA|1@50mA@500mA | 4 | CLLCC-3 | LCC | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||
2N5153SMD05
Trans GP BJT PNP 80V 5A 1000mW 3-Pin SMD-0.5
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Semelab | GP BJT | PNP | Bipolar Power | Si | Single | 80 | 100 | 1 | 5.5 | 1.45@250mA@2.5A|2.2@500mA@5A | 5 | 150 | 1000 | 30 to 50|50 to 120 | 50@50mA@5V|70@2.5A@5V|35@2.5A@5V | 1.75 | 250(Max) | 0.75@250mA@2.5A|1.5@500mA@5A | 3 | SMD-0.5 | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||
| 2N7086-QR-B N-CHANNEL ENHANCEMENT MODE TRANSISTOR |
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Semelab | MOSFETs | 3 | TO-257AB | No | No | No | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||
| BDS16 Trans GP BJT NPN 120V 8A 43750mW 3-Pin(3+Tab) TO-257AB |
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 120 | 120 | 1 | 5 | 8 | 43750 | 30 to 50|2 to 30 | 40@0.5A@2V|15@4A@2V | 1.5@0.4A@4A|0.4@0.05A@0.5A | 3 | TO-257AB | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
BUP52
Trans GP BJT NPN 200V 70A 3-Pin(2+Tab) TO-3
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 200 | 1 | 10 | 1.1@2A@20A|1.2@4A@40A|1.5@14A@70A | 70 | 300000 | 2 to 30 | 20@20A@4V|12@40A@4V|8@70A@4V | 0.5@2A@20A|0.6@4A@40A|0.9@14A@70A | 50 | 3 | TO-3 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||
| BUX43 Trans GP BJT NPN 325V 10A 120000mW 3-Pin(2+Tab) TO-3 |
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Semelab | GP BJT | NPN | Bipolar Power | Single | 325 | 1 | 10 | 120000 | 2 to 30 | 15@3A@4V | 3 | TO-3 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||
BUX50-QR
Bipolar NPN Device in A Hermetically Sealed TO-39 Metal Package
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Semelab | GP BJT | 3 | TO-39 | TO | No | No | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||
| BYV34-400TM HERMETICALLY SEALED DUAL FAST RECOVERY SILICON RECTIFIER FOR HI-REL APPLICATIONS |
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Semelab | Gleichrichter | 3 | TO-257AB | No | No | No | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||
| D1217UK Trans RF MOSFET N-CH 40V 20A 8-Pin Case DD |
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Semelab | HF-MOSFETs | Si | N | Dual Common Source | Enhancement | 2 | 40 | ±20 | 7 | 175000 | 20 | 120(Max)@0V | 10(Min) | 1 | 500 | 8 | Case DD | No | No | No | No | No | 5A991g. | No | No | ||||||||||||||||||||||||||||||||||
2N2222ACSM-QR-B
Trans GP BJT NPN 50V 0.8A 3-Pin CLLCC-1
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Semelab | GP BJT | NPN | Bipolar Power | Single | 50 | 75 | 1 | 6 | 2@50mA@500mA|1.2@15mA@150mA | 0.8 | 500 | 30 to 50|50 to 120 | 50@0.1mA@10V|75@1mA@10V|100@10mA@10V|100@150mA@10V|30@500mA@10V | 0.3@15mA@150mA|1@50mA@500mA | 250 | 3 | CLLCC-1 | LCC | No | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||
| IRFY9140-QR-B Trans MOSFET P-CH 100V 13A 3-Pin(3+Tab) TO-257AB |
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Semelab | MOSFETs | Power MOSFET | P | Single | Enhancement | 1 | 100 | ±20 | 60000 | 13 | 240@10V | 60(Max)@10V | 1400@25V | 3 | TO-257AB | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
2N2369A
Trans GP BJT NPN 15V 0.2A 3-Pin TO-18
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Semelab | GP BJT | NPN | Bipolar Small Signal | Single | 15 | 40 | 1 | 4.5 | 0.85@1mA@10mA|0.9@3mA@30mA|1.2@10mA@100mA | 0.2 | 486 | 360 | 2 to 30|30 to 50 | 40@10mA@0.35V|40@10mA@1V|30@30mA@0.4V|20@100mA@1V | 208.3 | 4(Max) | 0.2@1mA@10mA|0.25@3mA@30mA|0.45@10mA@100mA | 3 | TO-18 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||
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2N3019CSM
Trans GP BJT NPN 80V 1A 500mW 3-Pin CLLCC-1
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Semelab | GP BJT | NPN | Bipolar Small Signal | Si | Single | 80 | 140 | 1 | 7 | 1.1@15mA@150mA | 1 | 350 | 500 | 2 to 30|30 to 50|50 to 120 | 50@0.1mA@10V|90@10mA@10V|100@150mA@10V|50@500mA@10V|15@1A@10V | 90 | 12(Max) | 0.2@15mA@150mA|0.5@50mA@500mA | 4 | 3 | CLLCC-1 | LCC | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||
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2N3700
Trans GP BJT NPN 80V 1A 500mW 3-Pin TO-18
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 80 | 140 | 1 | 7 | 1.1@15mA@150mA | 1 | 500 | 50 to 120 | 50@0.1mA@10V|90@10mA@10V|100@150mA@10V|50@500mA@10V|15@1A@10V | 0.2@15mA@150mA|0.5@50mA@500mA | 3 | TO-18 | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
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2N4392CSM
Trans JFET N-CH 40V Si 3-Pin CLLCC-1
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Semelab | JFETs | Si | N | Single | 40 | 40 | 40 | 300 | 60000 | 3 | CLLCC-1 | LCC | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||
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2N5551CSM-JQR-B
Trans GP BJT NPN 160V 0.6A 350mW 3-Pin CLLCC-1
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Semelab | GP BJT | NPN | Bipolar Small Signal | Single | 160 | 180 | 1 | 6 | 1@1mA@10mA|1@5mA@50mA | 0.6 | 350 | 30 to 50|50 to 120 | 80@1mA@5V|80@10mA@5V|30@50mA@5V | 0.15@1mA@10mA|0.2@5mA@50mA | 300 | 3 | CLLCC-1 | LCC | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||
| BDX65B BIPOLAR NPN DARLINGTON DEVICE |
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Semelab | Darlington BJT | 3 | TO-3 | TO | No | No | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||
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BUX54
Trans GP BJT NPN 400V 2A 10000mW 3-Pin TO-39
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 400 | 450 | 1 | 7 | 1.5@0.15A@1.2A | 2 | 10000 | 17.5 | 0.5@0.06A@0.6A|1.3@0.15A@1.2A | 3 | TO-39 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
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BUX23
Trans GP BJT NPN 325V 30A 250000mW 3-Pin(2+Tab) TO-3
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 325 | 400 | 1 | 7 | 1.5@3.2A@16A | 30 | 250000 | 2 to 30 | 12@8A@4V|8@16A@4V | 0.6 | 0.8@1.6A@8A|1@3.2A@16A | 3 | TO-3 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||
| D1006UK Trans RF MOSFET N-CH 70V 30A 6-Pin Case DV |
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Semelab | HF-MOSFETs | Si | N | Single Quad Source | Enhancement | 1 | 70 | ±20 | 7 | 220000 | 30 | 360(Max)@0V | 14(Min) | 1 | 200 | 6 | Case DV | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
| D1014UK Trans RF MOSFET N-CH 70V 10A 3-Pin Case DP |
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Semelab | HF-MOSFETs | Si | N | Single | Enhancement | 1 | 70 | ±20 | 87500 | 10 | 120(Max)@0V | 12(Min) | 1 | 40 | 500 | 3 | Case DP | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
| D1027UK Trans RF MOSFET N-CH 70V 30A 5-Pin Case DR |
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Semelab | HF-MOSFETs | Si | N | Dual Common Source | Enhancement | 2 | 70 | ±20 | 438000 | 30 | 360(Max)@28V | 13(Min) | 1 | 150 | 200 | 5 | Case DR | No | No | No | No | No | EAR99 | No | No |