TT Electronics / Semelab Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Category | Material | Channel Type | Configuration | Channel Mode | Peak Reverse Repetitive Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Number of Elements per Chip | Maximum Continuous Forward Current - (mA) | Maximum Collector-Base Voltage - (V) | Maximum Drain-Gate Voltage - (V) | Maximum Base-Emitter Voltage - (V) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Peak Reverse Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Continuous DC Collector Current - (A) | Operational Bias Conditions | Maximum Gate Threshold Voltage - (V) | Maximum Continuous Drain Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Maximum Junction Ambient Thermal Resistance | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Typical Power Gain - (dB) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Process Technology | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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2N3700CSM
Trans GP BJT NPN 80V 1A 3-Pin CLLCC-1
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 80 | 1 | 140 | 7 | 1.1@15mA@150mA | 1 | 2 to 30|30 to 50|50 to 120 | 50@0.1mA@10V|90@10mA@10V|100@150mA@10V|50@500mA@10V|15@1A@10V | 500 | 0.2@15mA@150mA|0.5@50mA@500mA | 3 | CLLCC-1 | LCC | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
2N2369A
Trans GP BJT NPN 15V 0.2A 3-Pin TO-18
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Semelab | GP BJT | NPN | Bipolar Small Signal | Single | 15 | 1 | 40 | 4.5 | 0.85@1mA@10mA|0.9@3mA@30mA|1.2@10mA@100mA | 0.2 | 2 to 30|30 to 50 | 40@10mA@0.35V|40@10mA@1V|30@30mA@0.4V|20@100mA@1V | 486 | 208.3 | 5(Max) | 360 | 0.2@1mA@10mA|0.25@3mA@30mA|0.45@10mA@100mA | 4(Max) | 12 | 3 | TO-18 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||
| D2219UKTR Trans RF MOSFET N-CH 40V 2A |
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Semelab | HF-MOSFETs | Si | N | Dual Quad Source | Enhancement | 2 | 40 | ±20 | 2 | 17500 | 12(Max)@0V | 1 | 2.5 | 10(Min) | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||
| IRFY240-QR-B Trans MOSFET N-CH 200V 12A 3-Pin(3+Tab) TO-257AB |
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Semelab | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 200 | ±20 | 4 | 12 | 220@10V | 60@10V | 60 | 60000 | 1300@25V | 3 | TO-257AB | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
| BDS10 Trans GP BJT NPN 60V 15A 43750mW 3-Pin(3+Tab) TO-257AB |
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 60 | 1 | 60 | 5 | 2.5@2.5A@10A | 15 | 2 to 30|30 to 50 | 40@0.5A@4V|15@5A@4V|5@10A@4V | 43750 | 1@0.5A@5A|3@2.5A@10A | 3 | TO-257AB | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| BDX67A Trans Darlington NPN 80V 16A 150000mW 3-Pin(2+Tab) TO-3 |
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Semelab | Darlington BJT | NPN | Single | 80 | 1 | 100 | 5 | 16 | 1000@10A@3V | 150000 | 2@40mA@10A | 3 | TO-3 | TO | No | Unknown | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||
| D1029UK Trans RF MOSFET N-CH 70V 35A 5-Pin Case DR |
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Semelab | HF-MOSFETs | Si | N | Dual Common Source | Enhancement | 2 | 70 | ±20 | 35 | 438000 | 420(Max)@28V | 1 | 350 | 13(Min) | 5 | Case DR | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| D2224UK Trans RF MOSFET 40V 8A 8-Pin SO |
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Semelab | HF-MOSFETs | Si | Dual Quad Source | 2 | 40 | ±20 | 8 | 29000 | 48(Max)@0V | 1 | 5 | 7(Min) | 8 | SO | SO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||
| D2017UK Trans RF MOSFET 65V 2A 3-Pin Case DP |
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Semelab | HF-MOSFETs | Si | Single | 1 | 65 | ±20 | 7 | 2 | 29000 | 20(Max)@0V | 13(Min) | 3 | Case DP | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||
| BDX64B BIPOLAR PNP DEVICE IN A HERMETICALLY SEALED TO3 METAL PACKAGE |
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Semelab | Darlington BJT | 3 | TO-3 | TO | No | No | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6077-QR-B Trans GP BJT NPN 275V 7A 45000mW 3-Pin(2+Tab) TO-66 |
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Semelab | GP BJT | NPN | Bipolar Power | Single | 275 | 1 | 7 | 2 to 30 | 12@1.2A@1V | 45000 | 3 | TO-66 | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||
| BDY26B Trans GP BJT NPN 180V 6A 50000mW 3-Pin(2+Tab) TO-3 |
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 180 | 1 | 300 | 10 | 1.2@0.25A@2A | 6 | 30 to 50 | 30@2A@4V | 3.5 | 50000 | 0.6@0.25A@2A | 120(Max) | 1000 | 3 | TO-3 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||
2N3055
Trans GP BJT NPN 60V 15A 115000mW 3-Pin(2+Tab) TO-3
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 60 | 1 | 100 | 7 | 15 | 2 to 30 | 20@4A@4V | 115000 | 0.75@0.4A@4A|2@3.3A@10A | 3 | TO-3 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
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2N2222A-QR-B
Trans GP BJT NPN 50V 0.8A 500mW 3-Pin TO-18
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Semelab | GP BJT | NPN | Bipolar Small Signal | Single | 50 | 1 | 75 | 6 | 1.2@15mA@150mA|2@50mA@500mA | 0.8 | 30 to 50|50 to 120 | 35@0.1mA@10V|50@1mA@1V|75@10mA@10V|100@150mA@10V|50@150mA@1V|40@500mA@10V | 500 | 0.3@15mA@150mA|1@50mA@500mA | 250 | 3 | TO-18 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
| D1023UK Trans RF MOSFET 70V 15A 5-Pin Case DT |
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Semelab | HF-MOSFETs | Si | Single Triple Source | 1 | 70 | ±20 | 7 | 15 | 117000 | 180(Max)@0V | 1 | 16(Min) | 5 | Case DT | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||
| D5002UK Trans RF MOSFET N-CH 125V 6A 4-Pin Case DA |
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Semelab | HF-MOSFETs | Si | N | Single Dual Source | Enhancement | 1 | 125 | ±20 | 6 | 87000 | 120(Max)@50V | 1 | 40 | 16(Min) | 4 | Case DA | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| D2254UK Trans MOSFET Si 40V 4A 8-Pin Case DBC4 |
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Semelab | MOSFETs | Power MOSFET | Si | Dual Common Dual Source | Enhancement | 2 | 40 | ±20 | 7 | 4 | 29000 | 24(Max)@0V | 8 | Case DBC4 | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||
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2N2907ACSM-QR-B
Trans GP BJT PNP 60V 0.6A 3-Pin CLLCC-1
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Semelab | GP BJT | PNP | Bipolar Small Signal | Si | Single | 60 | 1 | 60 | 5 | 1.3@15mA@150mA|2.6@50mA@500mA | 0.6 | 50 to 120 | 75@0.1mA@10V|100@1mA@10V|100@10mA@10V|100@150mA@10V|50@500mA@10V | 500 | 0.4@15mA@150mA|1.6@50mA@500mA | 3 | CLLCC-1 | LCC | No | Unknown | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||
| D1022UK Trans RF MOSFET N-CH 70V 15A 5-Pin Case DK |
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Semelab | HF-MOSFETs | Si | N | Dual Common Source | Enhancement | 2 | 70 | ±20 | 15 | 292000 | 180(Max)@28V | 1 | 100 | 10(Min) | 5 | Case DK | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| BDY28B Trans GP BJT NPN 250V 6A 50000mW 3-Pin(2+Tab) TO-3 |
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Semelab | GP BJT | NPN | Bipolar Power | Single | 250 | 1 | 500 | 10 | 1.2@0.25A@2A | 6 | 30 to 50 | 30@2A@4V | 3.5 | 50000 | 0.6@0.25A@2A | 65 | 1000 | 3 | TO-3 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||
| D2022UK Trans RF MOSFET 65V 5A 5-Pin Case DQ |
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Semelab | HF-MOSFETs | Si | Dual Common Source | 2 | 65 | ±20 | 7 | 5 | 125000 | 60(Max)@28V | 50 | 13(Min) | 5 | Case DQ | No | No | No | No | No | 5A991g. | No | No | ||||||||||||||||||||||||||||||||||||||
| D1024UK Trans RF MOSFET N-CH 70V 5A 8-Pin Case DD |
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Semelab | HF-MOSFETs | Si | N | Dual Common Source | Enhancement | 2 | 70 | ±20 | 7 | 5 | 100000 | 60(Max)@28V | 1 | 13(Min) | 8 | Case DD | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| IRFY430 Trans MOSFET N-CH 500V 4.5A 3-Pin(3+Tab) TO-257AB |
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Semelab | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 500 | ±20 | 4 | 4.5 | 1840@10V | 29.5(Max)@10V | 29.5(Max) | 75000 | 610@25V | 3 | TO-257AB | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
| BDY90 Trans GP BJT NPN 100V 10A 70000mW 3-Pin(2+Tab) TO-3 |
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Semelab | GP BJT | NPN | Bipolar Power | Single | 100 | 1 | 10 | 30 to 50 | 30@5A@5V | 70000 | 3 | TO-3 | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||
| 2N7085-QR-B Trans MOSFET N-CH 100V 20A 3-Pin(3+Tab) TO-257AB |
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Semelab | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 100 | ±20 | 4 | 20 | 75@10V | 35@10V | 35 | 60000 | 1400@25V | 3 | TO-257AB | No | No | No | No | No | EAR99 | No | No |