Infineon Technologies AG Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Technology | Number of SCRs/Diodes | Maximum Breakover Voltage - (V) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Material | Frequency Band | Channel Type | Repetitive Peak Off-State Current - (mA) | Configuration | Channel Mode | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Surge Current Rating - (A) | Peak Average Forward Current - (A) | Number of Elements per Chip | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (mA) | Maximum Collector-Base Voltage - (V) | Mode of Operation | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Minimum Quality Factor | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Continuous DC Collector Current - (A) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Peak On-State Voltage - (V) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Typical Carrier Life Time - (us) | Repetitive Peak Forward Blocking Voltage - (V) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Rated Average On-State Current - (A) | Maximum Junction Ambient Thermal Resistance | RMS On-State Current - (A) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Power 1dB Compression - (dBm) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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IPL60R125C7AUMA1
Trans MOSFET N-CH 600V 17A 4-Pin VSON EP T/R
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Bestand
3.000
1,4963 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Dual Source | Enhancement | 1 | 600 | 20 | 4 | 17 | 125@10V | 34@10V | 62 | 34 | 103000 | 1500@400V | 108@10V | Tape and Reel | 4 | VSON EP | SON | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF8915TRPBF
Trans MOSFET N-CH 20V 8.9A 8-Pin SOIC N T/R
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Bestand
264
Von 0,2323 € bis 0,4384 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Dual Dual Drain | Enhancement | 2 | 20 | ±20 | 2.5 | 8.9 | 18.3@10V | 4.9@4.5V | 62.5 | 2000 | 180 | 540@10V | 14.6@10V|21.6@4.5V | Tape and Reel | 8 | SOIC N | SO | No | Unknown | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSC0924NDIATMA1
Trans MOSFET N-CH 30V 17A/32A 8-Pin TISON EP T/R
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Bestand
7.784
Von 0,166 € bis 0,1829 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Dual | Enhancement | 2 | 30 | ±20 | 2 | 17@Q1|32@Q2 | 5@10V@Q1|3.7@10V@Q2 | 6.7@4.5V@Q1|8.5@4.5V@Q2 | 2500 | 870@15V@Q1|1100@15V@Q2 | Tape and Reel | 8 | TISON EP | SON | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IDK12G65C5XTMA2
Diode Schottky 650V 12A 3-Pin(2+Tab) D2PAK T/R
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Bestand
1.000
1,3903 €
pro Stück
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Infineon Technologies AG | Gleichrichter | Schottky Diode | Single | 650 | 12 | 97 | 1.8 | 190 | 360(Typ) | 104000 | Tape and Reel | 3 | D2PAK | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF6662TRPBF
Trans MOSFET N-CH Si 100V 8.3A 7-Pin Direct-FET MZ T/R
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Bestand
52
Von 0,9123 € bis 0,9589 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Dual Source | Enhancement | 1 | 100 | ±20 | 8.3 | 22@10V | 22@10V | 22 | 2800 | 1360@25V | 17.5@10V | Tape and Reel | 7 | Direct-FET MZ | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
F1225R12KT4GBOSA1
Trans IGBT Module N-CH 1200V 25A 160W 38-Pin ECONO3-4 Tray
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Bestand
10
82,2396 €
pro Stück
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Infineon Technologies AG | IGBT-Module | N | Array 12 | ±20 | 1200 | 25 | 160 | Tray | 38 | ECONO3-4 | No | Unknown | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DD435N34KHPSA1
Rectifier Diode
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Bestand
2
357,0359 €
pro Stück
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Infineon Technologies AG | Gleichrichter | Dual Series | 3400 | Tray | 3 | PB60-1 | Unknown | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPSA70R900P7SAKMA1
Trans MOSFET N-CH 700V 6A 3-Pin(3+Tab) TO-251 Tube
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Bestand
500
0,2091 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 700 | 16 | 3.5 | 6 | 900@10V | 6.8@10V | 62 | 6.8 | 30500 | 211@400V | 740@10V | Tube | 3 | TO-251 | TO | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IDH16G120C5XKSA1
Diode Schottky 1.2KV 40A 2-Pin(2+Tab) TO-220 Tube
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Bestand
23.510
4,3304 €
pro Stück
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Infineon Technologies AG | Gleichrichter | Schottky Diode | Single | 1200 | 40 | 140 | 1.95@16A | 80 | 250000 | Tube | 2 | TO-220 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFI3306GPBF
Trans MOSFET N-CH 60V 71A 3-Pin(3+Tab) TO-220FP Tube
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Bestand
916
Von 1,5512 € bis 2,6084 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 60 | ±20 | 4 | 71 | 4.2@10V | 90@10V | 90 | 46000 | 4685@50V | 3.3@10V | Tube | 3 | TO-220FP | TO | No | Unknown | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFR380L3E6327XTMA1
Trans RF BJT NPN 6V 0.08A 380mW 3-Pin TSLP T/R Automotive AEC-Q101
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Bestand
23.902
Von 0,0563 € bis 0,0618 €
pro Stück
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Infineon Technologies AG | HF-BJT | NPN | Si | Single | 6 | 1 | 15 | 2 | 0.08 | 3V/40mA | 50 to 120 | 90@40mA@3V | 1 | 380 | 0.45 | 19.5(Typ) | 14 | 29.5 | 14000(Typ) | 2.1 | Tape and Reel | 3 | TSLP | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Meist Gesucht
BAR81WH6327XTSA1
Diode PIN Switch 30V 100mA 4-Pin(3+Tab) SOT-343 T/R
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Bestand
356
Von 0,1946 € bis 0,2045 €
pro Stück
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Infineon Technologies AG | PIN | Switch | Single Dual Anode Dual Cathode | 30 | 100 | 1@5mA | 1 | 0.9@3V | 0.08 | 100 | Tape and Reel | 4 | SOT-343 | SOT | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRLR3802PBF
Trans MOSFET N-CH 12V 84A 3-Pin(2+Tab) DPAK Tube
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Bestand
2.799
0,3702 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 12 | ±12 | 84 | 8.5@4.5V | 27@5V | 88000 | 2490@6V | 6.5@4.5V | Tube | 3 | DPAK | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPP50R399CPXKSA1
Trans MOSFET N-CH 500V 9A 3-Pin(3+Tab) TO-220AB Tube
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Bestand
369
0,8357 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 500 | ±20 | 3.5 | 9 | 399@10V | 17@10V | 62 | 1.5 | 17 | 83000 | 890@100V | Tube | 3 | TO-220AB | TO | No | Unknown | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPW65R095C7XKSA1
Trans MOSFET N-CH 650V 24A 3-Pin(3+Tab) TO-247 Tube
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Bestand
420
Von 2,1553 € bis 2,7989 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 650 | 20 | 4 | 24 | 95@10V | 45@10V | 62 | 45 | 128000 | 2140@400V | 84@10V | Tube | 3 | TO-247 | TO | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FF750R17ME7DB11BPSA1
Trans IGBT Module N-CH 1700V 750A 11-Pin ECONOD-3 Tray
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Bestand
10
91,9107 €
pro Stück
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Infineon Technologies AG | IGBT-Module | N | Dual | ±20 | 1700 | 750 | Tray | 11 | ECONOD-3 | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFP4768PBF
Trans MOSFET N-CH 250V 93A 3-Pin(3+Tab) TO-247AC Tube
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Bestand
2.300
Von 2,3034 € bis 2,5391 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 250 | ±20 | 5 | 93 | 17.5@10V | 180@10V | 180 | 520000 | 10880@50V | Tube | 3 | TO-247AC | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IKWH40N65EH7XKSA1
Trans IGBT Chip N-CH 650V 80A 208W 3-Pin(3+Tab) TO-247 Tube
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Bestand
23
1,5339 €
pro Stück
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Infineon Technologies AG | IGBT-Chip | N | Single | ±20 | 650 | 80 | 208 | Tube | 3 | TO-247 | TO | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPS65R400CEAKMA1
Trans MOSFET N-CH 650V 15.1A 3-Pin(3+Tab) TO-251 Tube
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Bestand
1.036
0,3868 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 650 | 20 | 3.5 | 15.1 | 400@10V | 39@10V | 62 | 39 | 118000 | 710@100V | 360@10V | Tube | 3 | TO-251 | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IHW30N140R5LXKSA1
Trans IGBT Chip N-CH 1400V 80A 306W 3-Pin(3+Tab) TO-247 Tube
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Bestand
17
1,0824 €
pro Stück
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Infineon Technologies AG | IGBT-Chip | N | Single | ±20 | 1400 | 80 | 306 | Tube | 3 | TO-247 | TO | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DDB2U20N12W1RFB11BPSA1
Diode Rectifier Bridge Single 1.2KV 16-Pin Tray
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Bestand
22
10,0958 €
pro Stück
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Infineon Technologies AG | Brückengleichrichter | Single | 1200 | 150 | 1.85(Typ)@20A | 58(Typ) | Tray | 16 | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB057N06NATMA1
Trans MOSFET N-CH 60V 45A 3-Pin(2+Tab) D2PAK T/R
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Bestand
1.000
0,5989 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 60 | ±20 | 2.8(Typ) | 45 | 5.7@10V | 27@10V | 27 | 3000 | 2000@30V | 4.9@10V|6.4@6V | OptiMOS | Tape and Reel | 3 | D2PAK | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FP100R06KE3BOSA1
Trans IGBT Module N-CH 600V 100A 335W 24-Pin ECONO3-3 Tray
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Bestand
10
118,9484 €
pro Stück
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Infineon Technologies AG | IGBT-Module | N | Array 7 | ±20 | 600 | 100 | 335 | Tray | 24 | ECONO3-3 | No | Unknown | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPP082N10NF2SAKMA1
Trans MOSFET N-CH 100V 15A 3-Pin(3+Tab) TO-220 Tube
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Bestand
1.982
Von 0,5733 € bis 1,2645 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 100 | 20 | 15 | 8.2@10V | 28@10V | 28 | 3800 | 2000@50V | Tube | 3 | TO-220 | TO | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AUIRFR8405TRL
Trans MOSFET N-CH Si 40V 211A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
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Bestand
3.000
Von 1,2826 € bis 2,9291 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 40 | ±20 | 3.9 | 211 | 1.98@10V | 103@10V | 103 | 163000 | 5171@25V | Tape and Reel | 3 | DPAK | TO | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes |