Infineon Technologies AG Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Technology | Number of SCRs/Diodes | Maximum Breakover Voltage - (V) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Material | Frequency Band | Channel Type | Repetitive Peak Off-State Current - (mA) | Configuration | Channel Mode | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Surge Current Rating - (A) | Peak Average Forward Current - (A) | Number of Elements per Chip | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (mA) | Maximum Collector-Base Voltage - (V) | Mode of Operation | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Minimum Quality Factor | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Continuous DC Collector Current - (A) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Peak On-State Voltage - (V) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Typical Carrier Life Time - (us) | Repetitive Peak Forward Blocking Voltage - (V) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Rated Average On-State Current - (A) | Maximum Junction Ambient Thermal Resistance | RMS On-State Current - (A) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Power 1dB Compression - (dBm) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IRF4905LPBF
Trans MOSFET P-CH Si 55V 70A 3-Pin(3+Tab) TO-262 Tube
|
Bestand
3.213
Von 0,9076 € bis 1,3369 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Si | P | Single | Enhancement | 1 | 55 | ±20 | 4 | 70 | 20@10V | 120@10V | 40 | 0.75 | 120 | 170000 | 4620 | 3500@25V | Tube | 3 | TO-262 | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFS4321TRLPBF
Trans MOSFET N-CH 150V 85A 3-Pin(2+Tab) D2PAK T/R
|
Bestand
2.404
1,7647 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 150 | ±30 | 5 | 85 | 15@10V | 71@10V | 71 | 350000 | 4460@50V | 12@10V | Tape and Reel | 3 | D2PAK | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IRL530NSTRRPBF
Trans MOSFET N-CH 100V 17A 3-Pin(2+Tab) D2PAK T/R
|
Bestand
1.200
Von 0,3649 € bis 0,3799 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 100 | ±20 | 17 | 100@10V | 34(Max)@5V | 3800 | 800@25V | Tape and Reel | 3 | D2PAK | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFR460L3E6327XTMA1
Trans RF BJT NPN 4.5V 0.05A 200mW 3-Pin TSLP T/R Automotive AEC-Q101
|
Bestand
10.120
Von 0,209 € bis 0,4483 €
pro Stück
|
Infineon Technologies AG | HF-BJT | NPN | Si | Single | 4.5 | 1 | 15 | 1.5 | 0.05 | 3V/20mA | 50 to 120 | 90@20mA@3V | 0.55 | 200 | 0.28 | 11.5(Typ) | 16 | 27 | 22000(Typ) | 1.35(Min) | Tape and Reel | 3 | TSLP | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IKP20N65H5XKSA1
Trans IGBT Chip N-CH 650V 42A 125W 3-Pin(3+Tab) TO-220 Tube
|
Bestand
500
Von 0,9729 € bis 1,9175 €
pro Stück
|
Infineon Technologies AG | IGBT-Chip | Trench Stop 5 | N | Single | ±20 | 650 | 42 | 125 | Tube | 3 | TO-220 | TO | No | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IAUCN08S7N024TATMA1
Trans MOSFET N-CH 80V 186A T/R Automotive AEC-Q101
|
Bestand
2.000
Von 1,0634 € bis 1,9013 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quint Drain Quad Source | Enhancement | 1 | 80 | ±20 | 186 | 2.44@10V | 54@10V | 54 | 157000 | 3730@40V | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP4568PBFXKMA1 Trans MOSFET N-CH Si 150V 171A 3-Pin(3+Tab) TO-247AC Tube |
Bestand
2.682
Von 2,1226 € bis 4,5125 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 150 | ±30 | 5 | 171 | 5.9@10V | 151@10V | 151 | 517000 | 10470@50V | Tube | 3 | TO-247AC | TO | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPL60R075CFD7AUMA1
Trans MOSFET N-CH 600V 33A 4-Pin VSON EP T/R
|
Bestand
3.000
2,1848 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Triple Source | Enhancement | 1 | 600 | 20 | 4.5 | 33 | 75@10V | 67@10V | 62 | 67 | 189000 | 2721@400V | 66@10V | CoolMOS CFD7 | Tape and Reel | 4 | VSON EP | SON | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AUIRFB4610
Trans MOSFET N-CH Si 100V 73A 3-Pin(3+Tab) TO-220AB Tube Automotive AEC-Q101
|
Bestand
350
Von 0,6312 € bis 0,7109 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 100 | ±20 | 4 | 73 | 14@10V | 90@10V | 90 | 190000 | 3550@50V | 11@10V | Tube | 3 | TO-220AB | TO | No | Yes | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IDDD20G65C6XTMA1
Diode Schottky SiC 650V 51A 10-Pin HDSOP EP T/R
|
Bestand
1.676
3,4027 €
pro Stück
|
Infineon Technologies AG | Gleichrichter | Schottky Diode | SiC | Single Triple Anode Quint Cathode | 650 | 51 | 99 | 1.35@20A | 67@420V | 970(Typ) | 169000 | Tape and Reel | 10 | HDSOP EP | SO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FS3L400R10W3S7FB11BPSA1
Trans IGBT Module N-CH 950V 120A 52-Pin Tray
|
Bestand
8
46,7509 €
pro Stück
|
Infineon Technologies AG | IGBT-Module | N | Hex | ±20 | 950 | 120 | Tray | 52 | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IHW30N110R5XKSA1
Trans IGBT Chip N-CH 1100V 60A 330W 3-Pin(3+Tab) TO-247 Tube
|
Bestand
35
Von 2,0905 € bis 3,2135 €
pro Stück
|
Infineon Technologies AG | IGBT-Chip | N | Single | 25 | 1100 | 60 | 330 | Tube | 3 | TO-247 | TO | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FS150R12KE3BOSA1
Trans IGBT Module N-CH 1200V 200A 700W 35-Pin ECONO3-4 Tray
|
Bestand
10
190,5367 €
pro Stück
|
Infineon Technologies AG | IGBT-Module | N | Hex | ±20 | 1200 | 200 | 700 | Tray | 35 | ECONO3-4 | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRLS3036TRL7PP
Trans MOSFET N-CH Si 60V 300A 7-Pin(6+Tab) D2PAK T/R
|
Bestand
800
1,027 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Si | N | Single Quint Source | Enhancement | 1 | 60 | ±16 | 2.5 | 300 | 1.9@10V | 110@4.5V | 40 | 0.4 | 380000 | 1025 | 11270@50V | 1.5@10V|1.7@4.5V | Tape and Reel | 7 | D2PAK | TO | No | Unknown | No | Unknown | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFP843H6327XTSA1
Trans RF BJT NPN 2.25V 0.055A 125mW Automotive AEC-Q101 4-Pin(3+Tab) SOT-343 T/R
|
Bestand
3
0,0347 €
pro Stück
|
Infineon Technologies AG | HF-BJT | NPN | Single Dual Emitter | 2.25 | 1 | 2.9 | 0.055 | 1.8V/15mA | 120 to 200 | 150@15mA@1.8V | 0.73 | 125 | 5.23 | 8.5(Typ) | 24.5 | 24 | 1.85 | Tape and Reel | 4 | SOT-343 | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFB3207ZPBF
Trans MOSFET N-CH Si 75V 170A 3-Pin(3+Tab) TO-220AB Tube
|
Bestand
1.628
Von 0,8977 € bis 0,4717 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 75 | ±20 | 4 | 170 | 4.1@10V | 120@10V | 0.5 | 120 | 300000 | 6920@50V | 3.3@10V | Tube | 3 | TO-220AB | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DD180N16SHPSA1
Diode 1.6KV 226A 3-Pin PB34SB-1 Tray
|
Bestand
3
41,9825 €
pro Stück
|
Infineon Technologies AG | Gleichrichter | Dual Series | 1600 | 226 | 5750 | 1.39@500A | 1000 | Tray | 3 | PB34SB-1 | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IMW120R220M1HXKSA1
N-Channel SiC Trench MOSFET 1200V 13A TO-247-3
|
Bestand
202
5,1744 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | SiC | N | Single | Enhancement | 1 | 1200 | 18 | 5.7 | 13 | 294@18V | 8.5@18V | 62 | 2 | 75000 | 16 | 289@800V | 220@18V|280@15V | Tube | 3 | TO-247 | TO | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IAUCN04S7L019ATMA1
Trans MOSFET N-CH 40V 144A 8-Pin TDSON EP T/R Automotive AEC-Q101
|
Bestand
1.291
Von 0,343 € bis 0,5477 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 40 | ±16 | 144 | 1.92@10V | 29@10V | 29 | 75000 | 1929@20V | Tape and Reel | 8 | TDSON EP | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSC0906NSATMA1
Trans MOSFET N-CH 30V 18A 8-Pin TDSON EP T/R
|
Bestand
5.028
Von 0,4466 € bis 0,7155 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 30 | ±20 | 2 | 18 | 4.5@10V | 6.7@4.5V|13@10V | 50 | 20 | 13 | 2500 | 330 | 870@15V | 3.8@10V|5.1@4.5V | Tape and Reel | 8 | TDSON EP | SON | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IMZ120R220M1HXKSA1
Trans MOSFET N-CH SiC 1.2KV 13A 4-Pin(4+Tab) TO-247 Tube
|
Bestand
35
Von 4,0773 € bis 5,5977 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | SiC | N | Single Dual Source | Enhancement | 1 | 1200 | 18 | 13 | 294@18V | 8.5@18V | 75000 | 289@800V | 4 | TO-247 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPW90R500C3XKSA1
Trans MOSFET N-CH 900V 11A 3-Pin(3+Tab) TO-247 Tube
|
Bestand
352
Von 2,1479 € bis 4,6317 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 900 | ±20 | 3.5 | 11 | 500@10V | 68@10V | 62 | 0.8 | 68 | 156000 | 1700@100V | Tube | 3 | TO-247 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IRFS7730TRL7PP
Trans MOSFET N-CH Si 75V 269A 7-Pin(6+Tab) D2PAK T/R
|
Bestand
802
2,2866 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Si | N | Single Quint Source | Enhancement | 1 | 75 | ±20 | 3.7 | 269 | 2@10V | 285@10V | 0.4 | 285 | 375000 | 13970@25V | 1.7@10V|2.2@6V | Tape and Reel | 7 | D2PAK | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFIZ24NPBF
Trans MOSFET N-CH Si 55V 14A 3-Pin(3+Tab) TO-220FP Tube
|
Bestand
236
0,3148 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 55 | ±20 | 4 | 14 | 70@10V | 20(Max)@10V | 20(Max) | 29000 | 370@25V | Tube | Unknown | 3 | TO-220FP | TO | No | Unknown | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
BSC028N06NSTATMA1
Trans MOSFET N-CH 60V 24A 8-Pin TDSON EP T/R
|
Bestand
5.000
0,8869 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 60 | 20 | 24 | 2.8@10V | 37@10V | 50 | 1.5 | 37 | 3000 | 2700@30V | 2.3@10V|3.4@6V | Tape and Reel | 8 | TDSON EP | SON | No | No | No | No | EAR99 | Yes | Yes |