Infineon Technologies AG Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Technology | Number of SCRs/Diodes | Maximum Breakover Voltage - (V) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Material | Frequency Band | Channel Type | Repetitive Peak Off-State Current - (mA) | Configuration | Channel Mode | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Surge Current Rating - (A) | Peak Average Forward Current - (A) | Number of Elements per Chip | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (mA) | Maximum Collector-Base Voltage - (V) | Mode of Operation | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Minimum Quality Factor | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Continuous DC Collector Current - (A) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Peak On-State Voltage - (V) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Typical Carrier Life Time - (us) | Repetitive Peak Forward Blocking Voltage - (V) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Rated Average On-State Current - (A) | Maximum Junction Ambient Thermal Resistance | RMS On-State Current - (A) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Power 1dB Compression - (dBm) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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IDH16G120C5XKSA1
Diode Schottky 1.2KV 40A 2-Pin(2+Tab) TO-220 Tube
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Bestand
23.510
4,3299 €
pro Stück
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Infineon Technologies AG | Gleichrichter | Schottky Diode | Single | 1200 | 40 | 140 | 1.95@16A | 80 | 250000 | Tube | 2 | TO-220 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSC0924NDIATMA1
Trans MOSFET N-CH 30V 17A/32A 8-Pin TISON EP T/R
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Bestand
7.794
Von 0,1659 € bis 0,1829 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Dual | Enhancement | 2 | 30 | ±20 | 2 | 17@Q1|32@Q2 | 5@10V@Q1|3.7@10V@Q2 | 6.7@4.5V@Q1|8.5@4.5V@Q2 | 2500 | 870@15V@Q1|1100@15V@Q2 | Tape and Reel | 8 | TISON EP | SON | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPL60R125C7AUMA1
Trans MOSFET N-CH 600V 17A 4-Pin VSON EP T/R
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Bestand
3.000
1,4963 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Dual Source | Enhancement | 1 | 600 | 20 | 4 | 17 | 125@10V | 34@10V | 62 | 34 | 103000 | 1500@400V | 108@10V | Tape and Reel | 4 | VSON EP | SON | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF8915TRPBF
Trans MOSFET N-CH 20V 8.9A 8-Pin SOIC N T/R
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Bestand
264
Von 0,2323 € bis 0,4384 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Dual Dual Drain | Enhancement | 2 | 20 | ±20 | 2.5 | 8.9 | 18.3@10V | 4.9@4.5V | 62.5 | 2000 | 180 | 540@10V | 14.6@10V|21.6@4.5V | Tape and Reel | 8 | SOIC N | SO | No | Unknown | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB100N04S4H2ATMA1
Trans MOSFET N-CH 40V 100A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
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Bestand
6.980
Von 0,4134 € bis 0,4556 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 40 | ±20 | 4 | 100 | 2.4@10V | 70@10V | 70 | 115000 | 5520@25V | 2.1@10V|2.4@10V | Tape and Reel | 3 | D2PAK | TO | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IHW30N140R5LXKSA1
Trans IGBT Chip N-CH 1400V 80A 306W 3-Pin(3+Tab) TO-247 Tube
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Bestand
17
1,0822 €
pro Stück
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Infineon Technologies AG | IGBT-Chip | N | Single | ±20 | 1400 | 80 | 306 | Tube | 3 | TO-247 | TO | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DDB2U20N12W1RFB11BPSA1
Diode Rectifier Bridge Single 1.2KV 16-Pin Tray
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Bestand
22
10,0946 €
pro Stück
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Infineon Technologies AG | Brückengleichrichter | Single | 1200 | 150 | 1.85(Typ)@20A | 58(Typ) | Tray | 16 | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IDW10G120C5BFKSA1
Diode Schottky 1.2KV 34A 3-Pin(3+Tab) TO-247 Tube
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Bestand
527
Von 2,4036 € bis 3,5994 €
pro Stück
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Infineon Technologies AG | Gleichrichter | Schottky Diode | Dual Common Cathode | 1200 | 34 | 140 | 1.65@10A | 80 | 148000 | Tube | 3 | TO-247 | TO | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Meist Gesucht
BFP640H6327XTSA1
Trans RF BJT NPN 4.1V 0.05A 200mW 4-Pin(3+Tab) SOT-343 T/R Automotive AEC-Q101
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Bestand
43.913
Von 0,1137 € bis 0,1253 €
pro Stück
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Infineon Technologies AG | HF-BJT | NPN | SiGe | Single Dual Emitter | 4.1 | 1 | 13 | 1.2 | 0.05 | 3V/30mA | 50 to 120 | 110@30mA@3V | 200 | 13(Typ) | 24 | 26.5 | 40000(Typ) | 1.2(Typ) | Tape and Reel | 4 | SOT-343 | SOT | No | Yes | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPP032N06N3GXKSA1
Trans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-220 Tube
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Bestand
841
Von 0,3209 € bis 0,3322 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 60 | ±20 | 4 | 120 | 3.2@10V | 124@10V | 124 | 188000 | 10000@30V | 2.3@10V|2.6@10V | OptiMOS | Tube | 3 | TO-220 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFB3407ZPBF
Trans MOSFET N-CH Si 75V 122A 3-Pin(3+Tab) TO-220AB Tube
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Bestand
1.000
1,8803 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 75 | ±20 | 4 | 122 | 6.4@10V | 79@10V | 79 | 230000 | 4750@50V | 5@10V | Tube | 3 | TO-220AB | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Meist Gesucht
FF300R12KS4HOSA1
Trans IGBT Module N-CH 1200V 370A 1950W 7-Pin 62MM-1 Tray
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Bestand
24
129,591 €
pro Stück
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Infineon Technologies AG | IGBT-Module | N | Dual | ±20 | 1200 | 370 | 1950 | Tray | 7 | 62MM-1 | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB020N04NGATMA1
Trans MOSFET N-CH 40V 140A 7-Pin(6+Tab) D2PAK T/R
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Bestand
75
Von 0,9089 € bis 0,9552 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quint Source | Enhancement | 1 | 40 | ±20 | 4 | 140 | 2@10V | 90@10V | 90 | 167000 | 7300@20V | Tape and Reel | 7 | D2PAK | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DDB6U50N16W1RPBPSA1 Trans IGBT Module N-CH 1200V 50A 26-Pin Tray |
Bestand
288
11,9229 €
pro Stück
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Infineon Technologies AG | IGBT-Module | N | Single | ±20 | 1200 | 50 | Tray | 26 | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IDH06SG60CXKSA2
Diode Schottky 600V 6A 2-Pin(2+Tab) TO-220 Tube
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Bestand
75
Von 0,9211 € bis 1,0939 €
pro Stück
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Infineon Technologies AG | Gleichrichter | Schottky Diode | Single | 600 | 6 | 32 | 2.3 | 50 | 130(Typ) | 71000 | Tube | 2 | TO-220 | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
ISZ040N03L5ISATMA1
Trans MOSFET N-CH 30V 18A 8-Pin TSDSON EP T/R
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Bestand
9.900
Von 0,139 € bis 0,1554 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 30 | ±20 | 2 | 18 | 18@10V | 8.5@4.5V|17@10V | 2100 | 1100@15V | 8 | TSDSON EP | SON | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPD65R650CEAUMA1
Trans MOSFET N-CH 650V 10.1A 3-Pin(2+Tab) DPAK T/R
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Bestand
2.500
0,1117 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 650 | 20 | 3.5 | 10.1 | 650@10V | 23@10V | 62 | 2 | 23 | 86000 | 440@100V | 540@10V | Tape and Reel | 3 | DPAK | TO | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Meist Gesucht
FP15R12W1T4B3BOMA1
Trans IGBT Module N-CH 1200V 28A 130W 20-Pin EASY1B-1 Tray
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Bestand
24
Von 24,0451 € bis 29,2874 €
pro Stück
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Infineon Technologies AG | IGBT-Module | N | Hex | ±20 | 1200 | 28 | 130 | Tray | 20 | EASY1B-1 | No | Unknown | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Meist Gekauft
BFP196WH6327XTSA1
Trans RF BJT NPN 12V 0.15A 700mW Automotive AEC-Q101 4-Pin(3+Tab) SOT-343 T/R
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Bestand
76
Von 0,0478 € bis 0,0495 €
pro Stück
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Infineon Technologies AG | HF-BJT | NPN | Si | Single Dual Emitter | 12 | 1 | 20 | 2 | 0.15 | 8V/50mA | 50 to 120 | 70@50mA@8V | 3.9 | 700 | 0.86 | 19(Typ) | 12.5 | 32 | 7500(Typ) | 2.3(Min) | Tape and Reel | 4 | SOT-343 | SOT | No | Yes | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IKFW50N60DH3XKSA1
Trans IGBT Chip N-CH 600V 53A 145W 3-Pin(3+Tab) TO-247 Tube
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Bestand
240
Von 1,0753 € bis 1,1065 €
pro Stück
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Infineon Technologies AG | IGBT-Chip | N | Single | ±20 | 600 | 53 | 145 | Tube | 3 | TO-247 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Meist Gesucht
BCR198WH6327XTSA1
Trans Digital BJT PNP 50V 0.1A 250mW 3-Pin SOT-323 T/R Automotive AEC-Q101
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Bestand
139
Von 0,0281 € bis 0,0295 €
pro Stück
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Infineon Technologies AG | Digital-BJT | PNP | Single | 50 | 47 | 1 | 0.1 | 70@5mA@5V | 250 | 0.3@0.5mA@10mA | Tape and Reel | 3 | SOT-323 | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FP35R12KT4BPSA1
Trans IGBT Module N-CH 1200V 35A 210W 23-Pin ECONO2B Tray
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Bestand
7
19,2187 €
pro Stück
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Infineon Technologies AG | IGBT-Module | N | Hex | ±20 | 1200 | 35 | 210 | Tray | 23 | ECONO2B | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IDK08G120C5XTMA1
Diode Schottky SiC 1.2KV 22.8A 3-Pin(2+Tab) D2PAK T/R
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Bestand
536
Von 0,50 € bis 0,5425 €
pro Stück
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Infineon Technologies AG | Gleichrichter | Schottky Diode | SiC | Single Dual Cathode | 1200 | 22.8 | 70 | 1.95@8A | 40 | 365(Typ) | 126000 | Tape and Reel | 3 | D2PAK | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPDQ65R080CFD7XTMA1
Trans MOSFET N-CH 650V 36A 22-Pin HDSOP EP T/R
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Bestand
70
Von 0,9999 € bis 1,0339 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Ten Source Eleven Drain | Enhancement | 1 | 650 | 20 | 36 | 80@10V | 50@10V | 50 | 223000 | 2513@400V | Tape and Reel | 22 | HDSOP EP | SO | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IGW20N60H3FKSA1
Trans IGBT Chip N-CH 600V 40A 170W 3-Pin(3+Tab) TO-247 Tube
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Bestand
253
Von 0,9426 € bis 2,2915 €
pro Stück
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Infineon Technologies AG | IGBT-Chip | N | Single | ±20 | 600 | 40 | 170 | Tube | 3 | TO-247 | TO | No | No | No | No | No | EAR99 | No | No |