Infineon Technologies AG Dioden, Transistoren und Thyristoren
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Technology | Number of SCRs/Diodes | Maximum Rate of Rise of Off-State Voltage - (V/us) | Maximum Breakover Voltage - (V) | Category | Bridge Type | Maximum Rate of Rise of On-State Current - (A/us) | Material | Frequency Band | Diode Type | Channel Type | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Current - (mA) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Surge Current Rating - (A) | Peak Average Forward Current - (A) | Maximum Reverse Current - (uA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Peak RMS Reverse Voltage - (V) | Number of Elements per Chip | Mode of Operation | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Peak Reverse Current - (uA) | Minimum Quality Factor | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Power Dissipation - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Typical Carrier Life Time - (us) | RMS On-State Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Repetitive Peak Off-State Current - (mA) | Maximum Junction Case Thermal Resistance | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Power 1dB Compression - (dBm) | Maximum Frequency - (MHz) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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BSZ0503NSIATMA1
Trans MOSFET N-CH 30V 20A 8-Pin TSDSON EP T/R
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Bestand
4.897
1,028 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 30 | 20 | 2 | 2100 | 20 | 3.4@10V | 15@10V | 15 | 960@15V | 3.5@4.5V|2.8@10V | Tape and Reel | 8 | TSDSON EP | SON | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPP023N08N5AKSA1
Trans MOSFET N-CH 80V 120A 3-Pin(3+Tab) TO-220 Tube
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Bestand
1.304
1,1558 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 80 | 20 | 62 | 3.8 | 300000 | 120 | 2.3@10V | 133@10V | 0.5 | 133 | 9300@40V | 2@10V|2.4@6V | Tube | 3 | TO-220 | TO | No | Unknown | No | Unknown | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IPP040N06N3GXKSA1
Trans MOSFET N-CH 60V 90A 3-Pin(3+Tab) TO-220 Tube
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Bestand
2.120
Von 0,5855 € bis 1,4416 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 60 | ±20 | 4 | 188000 | 90 | 4@10V | 98@10V | 98 | 8000@30V | 3@10V|3.3@10V | Tube | 3 | TO-220 | TO | No | Unknown | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TT820N16KOFHPSA1
SCR Module 1600V 1050A(RMS) 24800A 7-Pin Tray
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Bestand
2
270,3813 €
pro Stück
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Infineon Technologies AG | SCR Modules | 2SCRs | 1000 | 200 | 2 | 1600 | 250 | 300 | 1.27@1500A | 1050 | 1600 | 820 | 120 | Tray | 7 | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IDP08E65D1XKSA1
Diode Switching 650V 16A 2-Pin(2+Tab) TO-220 Tube
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Bestand
3
0,4685 €
pro Stück
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Infineon Technologies AG | Gleichrichter | Switching Diode | Single | 650 | 16 | 64 | 1.7@8A | 40 | 56000 | 80 | Tube | 2 | TO-220 | TO | No | Unknown | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FF800R12KE7HPSA1
Trans IGBT Module N-CH 1200V 800A 7-Pin Tray
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Bestand
4
149,7204 €
pro Stück
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Infineon Technologies AG | IGBT-Module | N | Dual | ±20 | 1200 | 800 | 7 | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPDQ60R037CM8XTMA1
Trans MOSFET N-CH 600V 65A 22-Pin HDSOP EP T/R
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Bestand
700
Von 3,2648 € bis 2,2797 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Ten Source Eleven Drain | Enhancement | 1 | 600 | 20 | 338000 | 65 | 37@10V | 79@10V | 3459@400V | 22 | HDSOP EP | SO | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFR2405TRPBF
Trans MOSFET N-CH Si 55V 56A 3-Pin(2+Tab) DPAK T/R
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Bestand
16.396
Von 0,436 € bis 1,5821 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 55 | ±20 | 110000 | 56 | 16@10V | 70@10V | 70 | 2430@25V | Tape and Reel | 3 | DPAK | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
ISC058N04NM5ATMA1
Trans MOSFET N-CH 40V 17A 8-Pin TDSON EP T/R
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Bestand
10.000
0,2385 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 40 | 20 | 3000 | 17 | 5.8@10V | 12@10V | 12 | 870@20V | Tape and Reel | 8 | TDSON EP | SON | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPDQ65R018CM8XTMA1
Trans MOSFET N-CH 650V 127A 22-Pin HDSOP EP T/R
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Bestand
750
Von 6,4805 € bis 8,4129 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Ten Source Eleven Drain | Enhancement | 1 | 650 | 20 | 625000 | 127 | 18@10V | 173@10V | 173 | 8290@400V | Tape and Reel | 22 | HDSOP EP | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPA65R600E6XKSA1
Trans MOSFET N-CH 650V 7.3A 3-Pin(3+Tab) TO-220FP Tube
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Bestand
20
Von 1,0798 € bis 2,0127 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 650 | 20 | 80 | 3.5 | 28000 | 7.3 | 600@10V | 23@10V | 4.5 | 23 | 440@100V | 540@10V | Tube | 3 | TO-220FP | TO | No | Unknown | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SPI21N50C3XKSA1
Trans MOSFET N-CH 500V 21A 3-Pin(3+Tab) TO-262 Tube
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Bestand
1.000
Von 1,2225 € bis 3,5661 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 500 | ±20 | 3.9 | 208000 | 21 | 190@10V | 95@10V | 0.6 | 95 | 2400@25V | 160@10V | Tube | 3 | TO-262 | TO | No | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IKY120N65EH7XKSA1
Trans IGBT Chip N-CH 650V 160A 498W 4-Pin(4+Tab) TO-247 Tube
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Bestand
130
Von 4,7781 € bis 1,8581 €
pro Stück
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Infineon Technologies AG | IGBT-Chip | N | Single | ±20 | 650 | 160 | 498 | Tube | 4 | TO-247 | TO | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SMBD914E6327HTSA1
Diode Switching Si 100V 0.25A 3-Pin SOT-23 T/R Automotive AEC-Q101
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Bestand
12.000
0,0238 €
pro Stück
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Infineon Technologies AG | Gleichrichter | Switching Diode | Single | 100 | 0.25 | 4.5 | 1.25@0.15A | 0.1@75V | 370 | 4 | Silicon | Tape and Reel | Unknown | 3 | SOT-23 | SOT | No | Yes | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB048N15N5LFATMA1
Trans MOSFET N-CH 150V 150A 3-Pin(2+Tab) D2PAK T/R
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Bestand
869
Von 4,7347 € bis 6,116 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 150 | 20 | 62 | 313000 | 150 | 4.8@10V | 84@10V | 0.4 | 84 | 290@75V | 3.9@10V | 3 | D2PAK | TO | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB60R045P7ATMA1
Trans MOSFET N-CH 600V 61A 3-Pin(2+Tab) D2PAK T/R
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Bestand
696
Von 2,5475 € bis 0,9539 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 600 | 20 | 4 | 201000 | 61 | 45@10V | 90@10V | 90 | 3891@400V | 38@10V | 3 | D2PAK | TO | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRGP6630DPBF
Trans IGBT Chip N-CH 600V 47A 192W 3-Pin(3+Tab) TO-247AC Tube
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Bestand
8
0,4347 €
pro Stück
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Infineon Technologies AG | IGBT-Chip | Trench Stop | N | Single | ±20 | 600 | 47 | 192 | Tube | 3 | TO-247AC | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IMBG120R140M1HXTMA1
Trans MOSFET N-CH SiC 1.2KV 18A 8-Pin(7+Tab) TO-263 T/R
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Bestand
610
Von 2,6244 € bis 1,1085 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | SiC | N | Single Hex Source | Enhancement | 1 | 1200 | 18 | 62 | 107000 | 18 | 189@18V | 13.4@18V | 491@800V | TMOS | Tape and Reel | 8 | TO-263 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FS150R12N2T7B15BPSA1 Trans IGBT Module N-CH 1200V 150A 35-Pin ECONO2B Tray |
Bestand
9
Von 69,2408 € bis 31,8065 €
pro Stück
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Infineon Technologies AG | IGBT-Module | Trench Stop | N | Hex | ±20 | 1200 | 150 | Tray | 35 | ECONO2B | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPD30N08S222ATMA1
Trans MOSFET N-CH 75V 30A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
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Bestand
2.500
0,6828 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 75 | ±20 | 4 | 136000 | 30 | 21.5@10V | 44@10V | 1.1 | 44 | 1400@25V | 17.4@10V | Tape and Reel | 3 | DPAK | TO | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF7205TRPBF
Trans MOSFET P-CH Si 30V 4.6A 8-Pin SOIC N T/R
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Bestand
12.001
0,1974 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | Si | P | Single Quad Drain Triple Source | Enhancement | 1 | 30 | ±20 | 50 | 3 | 2500 | 4.6 | 70@10V | 27@10V | 27 | 720 | 870@10V | Tape and Reel | 8 | SOIC N | SO | No | Unknown | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IGT65R035D2ATMA1
Enhancement-Mode Power GaN Transistor
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Bestand
1
4,3391 €
pro Stück
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Infineon Technologies AG | MOSFETs | 8 | HSOF EP | SO | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPD80R450P7ATMA1
Trans MOSFET N-CH 800V 11A 3-Pin(2+Tab) TO-252 T/R
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Bestand
5.000
0,6468 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 800 | 20 | 62 | 3.5 | 73000 | 11 | 450@10V | 24@10V | 1.7 | 24 | 770@500V | 380@10V | 3 | TO-252 | TO | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRLL2705TRPBF
Trans MOSFET N-CH Si 55V 5.2A 4-Pin(3+Tab) SOT-223 T/R
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Bestand
130.000
Von 0,2076 € bis 0,2377 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | Si | N | Single Dual Drain | Enhancement | 1 | 55 | ±16 | 120 | 2 | 2100 | 5.2 | 40@10V | 32@10V | 32 | 220 | 870@25V | Tape and Reel | Unknown | 4 | SOT-223 | SOT | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IPA60R125CPXKSA1
Trans MOSFET N-CH 650V 25A 3-Pin(3+Tab) TO-220FP Tube
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Bestand
742
2,8818 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 650 | ±20 | 80 | 3.5 | 35000 | 25 | 125@10V | 53@10V | 3.6 | 53 | 2500@100V | Tube | 3 | TO-220FP | TO | No | Unknown | No | No | No | No | EAR99 | No | No |