Infineon Technologies AG Dioden, Transistoren und Thyristoren
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Technology | Number of SCRs/Diodes | Maximum Breakover Voltage - (V) | Material | Category | Bridge Type | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Frequency Band | Diode Type | Channel Type | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Peak Reverse Repetitive Voltage - (V) | Number of Elements per Chip | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Surge Current Rating - (A) | Peak On-State Voltage - (V) | Peak Average Forward Current - (A) | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (A) | Maximum Continuous DC Collector Current - (mA) | Maximum Collector-Base Voltage - (V) | Peak RMS Reverse Voltage - (V) | Mode of Operation | Typical Input Resistance - (kOhm) | Rated Average On-State Current - (A) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Power Dissipation - (mW) | Maximum Holding Current - (mA) | Maximum Drain-Source Voltage - (V) | Maximum Continuous Drain Current - (mA) | Maximum Base-Emitter Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Minimum Quality Factor | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum Forward Voltage - (V) | Maximum DC Collector Current - (A) | Peak Reverse Current - (uA) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Diode Capacitance - (pF) | Repetitive Peak Forward Blocking Voltage - (V) | Typical Carrier Life Time - (us) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | RMS On-State Current - (A) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Repetitive Peak Off-State Current - (mA) | Maximum Transition Frequency - (MHz) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Power 1dB Compression - (dBm) | Maximum Frequency - (MHz) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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IPD053N06NATMA1
Trans MOSFET N-CH 60V 45A 3-Pin(2+Tab) DPAK T/R
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Bestand
38.423
Von 0,481 € bis 1,7415 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 3000 | 60 | 45 | ±20 | 2.8(Typ) | 5.3@10V | 27@10V | 27 | 2000@30V | 4.5@10V|6@6V | Tape and Reel | 3 | DPAK | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FS150R12KT3BOSA1
Trans IGBT Module N-CH 1200V 200A 700W 35-Pin ECONO3-4 Tray
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Bestand
10
144,2782 €
pro Stück
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Infineon Technologies AG | IGBT-Module | N | Hex | ±20 | 1200 | 200 | 700 | Tray | 35 | ECONO3-4 | No | Unknown | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSC886N03LSGATMA1
Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R
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Bestand
8.258
Von 0,1866 € bis 0,4457 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 2500 | 30 | 13 | ±20 | 6@10V | 9.5@4.5V|20@10V | 20 | 1600@15V | Tape and Reel | 8 | TDSON EP | SON | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSC900N20NS3GATMA1
Trans MOSFET N-CH 200V 15.2A 8-Pin TDSON EP T/R
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Bestand
2.080
Von 0,6681 € bis 1,9742 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 62500 | 200 | 15.2 | ±20 | 4 | 90@10V | 9@10V | 9 | 690@100V | 77@10V | Tape and Reel | 8 | TDSON EP | SON | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPW65R050CFD7AXKSA1
Trans MOSFET N-CH 650V 45A 3-Pin(3+Tab) TO-247 Tube Automotive AEC-Q101
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Bestand
240
Von 5,9233 € bis 8,0682 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 227000 | 650 | 45 | 20 | 4.5 | 50@10V | 102@10V | 102 | 4975@400V | Tube | 3 | TO-247 | TO | No | Yes | AEC-Q101 | Yes | Yes | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSC0902NSATMA1
Trans MOSFET N-CH 30V 24A 8-Pin TDSON EP T/R
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Bestand
46.713
Von 0,2255 € bis 0,2632 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 2500 | 30 | 24 | ±20 | 2 | 2.6@10V | 13@4.5V|26@10V | 26 | 1700@15V | 2.2@10V|2.8@4.5V | Tape and Reel | 8 | TDSON EP | SON | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TD250N16KOFHPSA1
SCR Module 1600V 410A(RMS) 9100A 5-Pin PB50-1 Tray
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Bestand
3
142,5333 €
pro Stück
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Infineon Technologies AG | SCR Modules | 150 | 1000 | 2 | 1.5@800A | 200 | 250 | 300 | 1600 | 1600 | 410 | 50 | 5 | PB50-1 | No | Unknown | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IGOT65R055D2AUMA1
Enhancement-Mode Power GaN Transistor
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Bestand
800
Von 2,6494 € bis 3,7793 €
pro Stück
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Infineon Technologies AG | MOSFETs | 20 | DSO EP | SO | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FP30R06W1E3BOMA1
Trans IGBT Module N-CH 600V 37A 115W 20-Pin EASY1B-1 Tray
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Bestand
24
Von 21,5357 € bis 7,4929 €
pro Stück
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Infineon Technologies AG | IGBT-Module | N | Array 7 | ±20 | 600 | 37 | 115 | Tray | 20 | EASY1B-1 | No | Unknown | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPP60R160C6XKSA1
Trans MOSFET N-CH 600V 23.8A 3-Pin(3+Tab) TO-220 Tube
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Bestand
1.376
Von 1,4372 € bis 3,2181 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 176000 | 600 | 23.8 | 20 | 62 | 3.5 | 160@10V | 75@10V | 75 | 1660@100V | 140@10V | Tube | 3 | TO-220 | TO | No | Unknown | No | Unknown | Yes | Unknown | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
F3L50R06W1E3B11BOMA1
Trans IGBT Module N-CH 600V 75A 175W 14-Pin EASY1B-2 Tray
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Bestand
12
27,591 €
pro Stück
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Infineon Technologies AG | IGBT-Module | N | Quad | ±20 | 600 | 75 | 175 | Tray | 14 | EASY1B-2 | No | Unknown | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IAUC45N04S6N070HATMA1
Trans MOSFET N-CH 40V 55A 8-Pin TDSON EP T/R Automotive AEC-Q101
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Bestand
5.000
Von 0,4977 € bis 1,2526 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Dual Dual Drain Common Source | Enhancement | 2 | 41000 | 40 | 55 | ±20 | 3 | 7@10V | 9@10V | 9 | 539@25V | Tape and Reel | 8 | TDSON EP | SON | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IPP083N10N5AKSA1
Trans MOSFET N-CH 100V 73A 3-Pin(3+Tab) TO-220 Tube
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Bestand
341
0,3775 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 100000 | 100 | 73 | 20 | 62 | 3.8 | 8.3@10V | 30@10V | 30 | 2100@50V | 7.3@10V|8.9@6V | Tube | 3 | TO-220 | TO | No | Unknown | No | Unknown | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPD30N12S3L31ATMA1
Trans MOSFET N-CH 120V 30A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
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Bestand
5.000
0,3588 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 57000 | 120 | 30 | ±20 | 2.4 | 31@10V | 24@10V | 2.6 | 24 | 1520@25V | 26@10V|32@4.5V | Tape and Reel | 3 | DPAK | TO | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFR3607TRPBF
Trans MOSFET N-CH Si 75V 80A 3-Pin(2+Tab) DPAK T/R
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Bestand
9.571
Von 0,447 € bis 1,4114 €
pro Stück
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Infineon Technologies AG | MOSFETs | Si | Power MOSFET | N | Single | Enhancement | 1 | 140000 | 75 | 80 | ±20 | 4 | 9@10V | 56@10V | 56 | 3070@50V | 7.34@10V | Tape and Reel | 3 | DPAK | TO | No | Unknown | No | Unknown | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPA600N25NM3SXKSA1
Trans MOSFET N-CH 250V 15A 3-Pin(3+Tab) TO-220FP Tube
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Bestand
745
Von 3,1271 € bis 3,2221 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 38000 | 250 | 15 | 20 | 4 | 60@10V | 22@10V | 22 | 1800@100V | Tube | 3 | TO-220FP | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IPD60R800CEAUMA1
Trans MOSFET N-CH 600V 8.4A 3-Pin(2+Tab) DPAK T/R
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Bestand
2.500
0,2016 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 74000 | 600 | 8.4 | 20 | 62 | 3.5 | 800@10V | 17.2@10V | 2.6 | 17.2 | 373@100V | 680@10V | Tape and Reel | 3 | DPAK | TO | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IMZA65R057M1HXKSA1
Trans MOSFET N-CH SiC 650V 35A 4-Pin(4+Tab) TO-247 Tube
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Bestand
4
5,8663 €
pro Stück
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Infineon Technologies AG | MOSFETs | SiC | Power MOSFET | N | Single Dual Source | Enhancement | 1 | 133000 | 650 | 35 | 23 | 74@18V | 28@18V | 930@400V | Tube | 4 | TO-247 | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFH7914TRPBF
Trans MOSFET N-CH 30V 15A 8-Pin PQFN T/R
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Bestand
78
Von 0,3507 € bis 0,5028 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 3100 | 30 | 15 | ±20 | 40 | 2.35 | 8.7@10V | 8.3@4.5V | 7.2 | 220 | 1160@15V | 7.5@10V|11.2@4.5V | Tape and Reel | 8 | PQFN | QFN | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFR5410TRRPBF
Trans MOSFET P-CH Si 100V 13A 3-Pin(2+Tab) DPAK T/R
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Bestand
9.000
Von 0,4266 € bis 0,4374 €
pro Stück
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Infineon Technologies AG | MOSFETs | Si | Power MOSFET | P | Single | Enhancement | 1 | 66000 | 100 | 13 | ±20 | 205@10V | 58(Max)@10V | 58(Max) | 760@25V | Tape and Reel | 3 | DPAK | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPD80R450P7ATMA1
Trans MOSFET N-CH 800V 11A 3-Pin(2+Tab) TO-252 T/R
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Bestand
5.000
0,6468 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 73000 | 800 | 11 | 20 | 62 | 3.5 | 450@10V | 24@10V | 1.7 | 24 | 770@500V | 380@10V | 3 | TO-252 | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRLL2705TRPBF
Trans MOSFET N-CH Si 55V 5.2A 4-Pin(3+Tab) SOT-223 T/R
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Bestand
130.000
Von 0,2076 € bis 0,2377 €
pro Stück
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Infineon Technologies AG | MOSFETs | Si | Power MOSFET | N | Single Dual Drain | Enhancement | 1 | 2100 | 55 | 5.2 | ±16 | 120 | 2 | 40@10V | 32@10V | 32 | 220 | 870@25V | Tape and Reel | Unknown | 4 | SOT-223 | SOT | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF200B211
Trans MOSFET N-CH Si 200V 12A 3-Pin(3+Tab) TO-220AB Tube
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Bestand
2.200
0,4202 €
pro Stück
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Infineon Technologies AG | MOSFETs | Si | Power MOSFET | N | Single | Enhancement | 1 | 80000 | 200 | 12 | ±20 | 4.9 | 170@10V | 15.3@10V | 15.3 | 790@50V | 135@10V | Tube | 3 | TO-220AB | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF7103TRPBF
Trans MOSFET N-CH Si 50V 3A 8-Pin SOIC T/R
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Bestand
102.693
Von 0,1848 € bis 0,4761 €
pro Stück
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Infineon Technologies AG | MOSFETs | Si | Power MOSFET | N | Dual Dual Drain | Enhancement | 2 | 2000 | 50 | 3 | ±20 | 62.5 | 3 | 130@10V | 12@10V | 12 | 140 | 290@25V | 110@10V|160@4.5V | Tape and Reel | 8 | SOIC | SO | No | Unknown | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSC050N10NS5ATMA1
Trans MOSFET N-CH 100V 16A 8-Pin TDSON EP T/R
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Bestand
11.092
Von 0,605 € bis 0,2525 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 3000 | 100 | 16 | 20 | 50 | 3.8 | 5@10V | 49@10V | 1.1 | 49 | 3300@50V | 8 | TDSON EP | SON | No | No | No | No | EAR99 | Yes | Yes |