Infineon Technologies AG Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Technology | Number of SCRs/Diodes | Maximum Rate of Rise of Off-State Voltage - (V/us) | Maximum Breakover Voltage - (V) | Category | Bridge Type | Maximum Rate of Rise of On-State Current - (A/us) | Material | Frequency Band | Diode Type | Channel Type | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Current - (mA) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Surge Current Rating - (A) | Peak Average Forward Current - (A) | Maximum Reverse Current - (uA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Peak RMS Reverse Voltage - (V) | Number of Elements per Chip | Mode of Operation | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Peak Reverse Current - (uA) | Minimum Quality Factor | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Power Dissipation - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Typical Carrier Life Time - (us) | RMS On-State Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Repetitive Peak Off-State Current - (mA) | Maximum Junction Case Thermal Resistance | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Power 1dB Compression - (dBm) | Maximum Frequency - (MHz) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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SPD15P10PLGBTMA1
Trans MOSFET P-CH 100V 15A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
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Bestand
532.786
0,4877 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | P | Single | Enhancement | 1 | 100 | ±20 | 75 | 2 | 128000 | 15 | 200@10V | 47@10V | 47 | 272 | 1120@25V | 140@10V|190@4.5V | Tape and Reel | 3 | DPAK | TO | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SPD18P06PGBTMA1
Trans MOSFET P-CH 60V 18.6A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
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Bestand
22.600
Von 0,5369 € bis 1,193 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | P | Single | Enhancement | 1 | 60 | ±20 | 100 | 4 | 80000 | 18.6 | 130@10V | 22@10V | 1.85 | 22 | 230 | 690@25V | 100@10V | Tape and Reel | 3 | DPAK | TO | No | Unknown | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TDB6HK180N16RRBPSA1
Trans IGBT Module N-CH 1200V 140A 515W 29-Pin Tray
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Bestand
13
88,6557 €
pro Stück
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Infineon Technologies AG | IGBT-Module | N | Single | ±20 | 1200 | 140 | 515 | 29 | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IMW120R040M1HXKSA1
Trans MOSFET N-CH SiC 1.2KV 55A 3-Pin(3+Tab) TO-247 Tube
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Bestand
130
5,7452 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | SiC | N | Single | Enhancement | 1 | 1200 | 20 | 227000 | 55 | 54.4@18V | 51@18V | 1620@800V | 3 | TO-247 | TO | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
F3L600R10W4S7FC22BPSA1
Trans IGBT Module N-CH 950V 320A 75-Pin Tray
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Bestand
1
50,3312 €
pro Stück
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Infineon Technologies AG | IGBT-Module | N | Hex | ±20 | 950 | 320 | Tray | 75 | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPP65R190CFD7AAKSA1
Trans MOSFET N-CH 650V 14A Automotive AEC-Q101 3-Pin(3+Tab) TO-220 Tube
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Bestand
465
Von 1,4917 € bis 2,4516 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 650 | 20 | 4.5 | 77000 | 14 | 190@10V | 28@10V | 28 | 1291@400V | Tube | 3 | TO-220 | TO | Yes | Yes | AEC-Q101 | Yes | Yes | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
ISC009N06LM5ATMA1
Trans MOSFET N-CH 60V 41A 8-Pin TSON EP T/R
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Bestand
170
Von 3,058 € bis 4,3228 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 60 | 20 | 3000 | 41 | 0.9@10V | 77@4.5V|157@10V | 157 | 10000@30V | Tape and Reel | 8 | TSON EP | SON | No | Unknown | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IMBG120R350M1HXTMA1
Trans MOSFET N-CH 1.2KV 4.7A 8-Pin(7+Tab) D2PAK T/R
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Bestand
705
Von 4,47 € bis 4,60 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quint Source | Enhancement | 1 | 1200 | 18 | 62 | 65000 | 4.7 | 468@18V | 5.9@18V | 196@800V | Tape and Reel | 8 | D2PAK | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPP024N08NF2SAKMA1
Trans MOSFET N-CH 80V 28A 3-Pin(3+Tab) TO-220 Tube
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Bestand
945
Von 0,707 € bis 0,8336 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 80 | 20 | 3800 | 28 | 2.4@10V | 89@10V | 89 | 6200@40V | Tube | 3 | TO-220 | TO | No | Unknown | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IKN03N60RC2ATMA1
Reverse Conducting Drive 2 offering Cost Effective IGBT
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Bestand
3.000
Von 0,2198 € bis 0,4773 €
pro Stück
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Infineon Technologies AG | IGBT-Chip | 3 | SOT-223 | SOT | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BCR108WH6327XTSA1
Trans Digital BJT NPN 50V 0.1A 250mW 3-Pin SOT-323 T/R Automotive AEC-Q101
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Bestand
15.000
Von 0,032 € bis 0,041 €
pro Stück
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Infineon Technologies AG | Digital-BJT | NPN | Single | 50 | 0.1 | 2.2 | 0.047 | 250 | 70@5mA@5V | 0.3@0.5mA@10mA | Tape and Reel | 3 | SOT-323 | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSC0902NSATMA1
Trans MOSFET N-CH 30V 24A 8-Pin TDSON EP T/R
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Bestand
46.713
Von 0,2262 € bis 0,264 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 30 | ±20 | 2 | 2500 | 24 | 2.6@10V | 13@4.5V|26@10V | 26 | 1700@15V | 2.2@10V|2.8@4.5V | Tape and Reel | 8 | TDSON EP | SON | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FP100R12KT4BOSA1
Trans IGBT Module N-CH 1200V 100A 515W 35-Pin ECONO3-3 Tray
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Bestand
17
106,4839 €
pro Stück
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Infineon Technologies AG | IGBT-Module | N | Hex | ±20 | 1200 | 100 | 515 | Tray | 35 | ECONO3-3 | No | Unknown | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPW60R180P7XKSA1
Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-247 Tube
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Bestand
460
Von 1,5203 € bis 2,9454 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 600 | 20 | 62 | 4 | 72000 | 18 | 180@10V | 25@10V | 25 | 1081@400V | 145@10V | Tube | 3 | TO-247 | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFL4315TRPBF
Trans MOSFET N-CH 150V 2.6A 4-Pin(3+Tab) SOT-223 T/R
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Bestand
17.554
Von 0,1895 € bis 0,2902 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Dual Drain | Enhancement | 1 | 150 | ±30 | 5 | 2800 | 2.6 | 185@10V | 12@10V | 12 | 420@25V | Tape and Reel | Unknown | 4 | SOT-223 | SOT | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF5803TRPBF
Trans MOSFET P-CH Si 40V 3.4A 6-Pin TSOP T/R
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Bestand
3.000
0,1305 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | Si | P | Single Quad Drain | Enhancement | 1 | 40 | ±20 | 62.5 | 3 | 2000 | 3.4 | 112@10V | 25@10V | 25 | 93 | 1110@25V | 51@12V|70@8V | Tape and Reel | 6 | TSOP | SO | No | Unknown | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPD95R1K2P7ATMA1
Trans MOSFET N-CH 950V 6A 3-Pin(2+Tab) DPAK T/R
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Bestand
400
Von 0,5501 € bis 1,62 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 950 | 20 | 3.5 | 52000 | 6 | 1200@10V | 15@10V | 15 | 478@400V | Tape and Reel | 3 | DPAK | TO | No | Unknown | Yes | Unknown | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSP135IXTSA1
Trans MOSFET N-CH 600V 0.12A 4-Pin(3+Tab) SOT-223 T/R
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Bestand
3.000
Von 0,1495 € bis 0,1758 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Dual Drain | Depletion | 1 | 600 | 20 | 1800 | 0.12 | 45000@10V | 3.7@5V | 98@25V | Tape and Reel | 4 | SOT-223 | SOT | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSS214NWH6327XTSA1
Trans MOSFET N-CH 20V 1.5A 3-Pin SOT-323 T/R Automotive AEC-Q101
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Bestand
82.831
Von 0,0945 € bis 0,1845 €
pro Stück
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Infineon Technologies AG | MOSFETs | Small Signal | N | Single | Enhancement | 1 | 20 | ±12 | 250 | 1.2 | 500 | 1.5 | 140@4.5V | 0.8@5V | 46 | 107@10V | 106@4.5V|171@2.5V | OptiMOS 2 | Tape and Reel | 3 | SOT-323 | SOT | No | Yes | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSC16DN25NS3GATMA1
Trans MOSFET N-CH 250V 10.9A 8-Pin TDSON EP T/R
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Bestand
4.248
Von 0,6501 € bis 0,7273 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 250 | ±20 | 4 | 62500 | 10.9 | 165@10V | 8.6@10V | 8.6 | 690@100V | 146@10V | OptiMOS | Tape and Reel | 8 | TDSON EP | SON | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAS170WE6327HTSA1
Diode Schottky Si 0.07A 2-Pin SOD-323 T/R Automotive AEC-Q101
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Bestand
19.315
Von 0,0489 € bis 0,2932 €
pro Stück
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Infineon Technologies AG | Gleichrichter | Schottky Diode | Si | Single | 0.07 | 0.1 | 1@0.015A | 0.1@50V | 250 | 2 | Tape and Reel | 2 | SOD-323 | SOD | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSG0811NDATMA1
Trans MOSFET N-CH 25V 31A/50A 8-Pin TISON EP T/R
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Bestand
5.012
Von 1,3666 € bis 1,9355 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Dual | Enhancement | 2 | 25 | ±16 | 50 | 2 | 6250 | 31@Q1|50@Q2 | 3@10V@Q1|0.8@10V@Q2 | 5.6@4.5V@Q1|20@4.5V@Q2 | 4.3@Q1|1.8@Q2 | 390@Q1|1400@Q2 | 780@12V@Q1|2700@12V@Q2 | 3.2@4.5V|2.4@10V@Q1|0.9@4.5V|0.7@10V@Q2 | Tape and Reel | Unknown | 8 | TISON EP | SON | No | Yes | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSC520N15NS3GATMA1
Trans MOSFET N-CH 150V 21A 8-Pin TDSON EP T/R
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Bestand
35.006
0,3306 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 150 | ±20 | 50 | 4 | 57000 | 21 | 52@10V | 8.7@10V | 2.2 | 8.7 | 80 | 670@75V | 42@8V|42@10V | Tape and Reel | 8 | TDSON EP | SON | No | Unknown | No | Unknown | Yes | Unknown | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF40R207
Trans MOSFET N-CH Si 40V 90A 3-Pin(2+Tab) DPAK T/R
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Bestand
1.985
Von 0,4392 € bis 0,674 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 40 | ±20 | 3.9 | 83000 | 90 | 5.1@10V | 45@10V | 45 | 2110@25V | 4.2@10V|5.9@6V | Tape and Reel | 3 | DPAK | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF2807STRLPBF
Trans MOSFET N-CH Si 75V 82A 3-Pin(2+Tab) D2PAK T/R
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Bestand
17.600
Von 0,6534 € bis 0,6852 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 75 | ±20 | 4 | 230000 | 82 | 13@10V | 160(Max)@10V | 160(Max) | 3820@25V | Tape and Reel | Unknown | 3 | D2PAK | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes |