Infineon Technologies AG Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Technology | Number of SCRs/Diodes | Maximum Rate of Rise of Off-State Voltage - (V/us) | Maximum Breakover Voltage - (V) | Category | Bridge Type | Maximum Rate of Rise of On-State Current - (A/us) | Material | Frequency Band | Diode Type | Channel Type | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Current - (mA) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Surge Current Rating - (A) | Peak Average Forward Current - (A) | Maximum Reverse Current - (uA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Peak RMS Reverse Voltage - (V) | Number of Elements per Chip | Mode of Operation | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Peak Reverse Current - (uA) | Minimum Quality Factor | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Power Dissipation - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Typical Carrier Life Time - (us) | RMS On-State Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Repetitive Peak Off-State Current - (mA) | Maximum Junction Case Thermal Resistance | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Power 1dB Compression - (dBm) | Maximum Frequency - (MHz) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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FP75R12KT3BOSA1
Trans IGBT Module N-CH 1200V 105A 355W 35-Pin ECONO3-3 Tray
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Bestand
7
Von 83,6832 € bis 90,0937 €
pro Stück
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Infineon Technologies AG | IGBT-Module | N | Hex | ±20 | 1200 | 105 | 355 | Tray | 35 | ECONO3-3 | No | Unknown | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
ISC009N03LF2SATMA1
Trans MOSFET N-CH 30V 43A 8-Pin TDSON EP T/R
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Bestand
5.000
Von 0,4242 € bis 0,6209 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 30 | 20 | 3000 | 43 | 0.9@10V | 46@4.5V|95@10V | 95 | 6400@15V | 8 | TDSON EP | No | No | No | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
F3L500R12W3H7H20BPSA1
Trans IGBT Module N-CH 1200V 315A 14-Pin Tray
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Bestand
8
89,0629 €
pro Stück
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Infineon Technologies AG | IGBT-Module | N | Quad | ±20 | 1200 | 315 | Tray | 14 | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FF600R17ME4BOSA1
Diode Module with Chopper-IGBT
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Bestand
4
257,2869 €
pro Stück
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Infineon Technologies AG | IGBT-Module | Dual | 1700 | Tray | 11 | ECONOD-5 | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSC046N02KSGAUMA1
Trans MOSFET N-CH 20V 19A 8-Pin TDSON EP T/R
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Bestand
14.910
Von 0,383 € bis 0,415 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 20 | ±12 | 2800 | 19 | 4.6@4.5V | 21@4.5V | 2.6 | 3100@10V | Tape and Reel | 8 | TDSON EP | SON | No | No | Unknown | Yes | Unknown | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IAUC100N04S6N022ATMA1
Trans MOSFET N-CH 40V 100A Automotive AEC-Q101 8-Pin TDSON EP T/R
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Bestand
996
Von 1,3687 € bis 1,412 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 40 | ±20 | 3 | 75000 | 100 | 2.26@10V | 29@10V | 29 | 1862@25V | Tape and Reel | 8 | TDSON EP | SON | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IDWD25G200C5XKSA1
Diode Schottky 2KV 77A 2-Pin(2+Tab) TO-247 Tube
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Bestand
232
Von 9,2069 € bis 9,8757 €
pro Stück
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Infineon Technologies AG | Gleichrichter | 2 | TO-247 | TO | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPD90N03S4L03ATMA1
Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
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Bestand
2.500
0,5118 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 30 | ±16 | 2.2 | 94000 | 90 | 3.3@10V | 60@10V | 60 | 4000@25V | 2.5@10V|3.4@4.5V | Tape and Reel | 3 | DPAK | TO | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSC027N06LS5ATMA1
Trans MOSFET N-CH 60V 23A 8-Pin TDSON EP T/R
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Bestand
3
2,339 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 60 | 20 | 50 | 2500 | 23 | 2.7@10V | 24@4.5V | 3300@30V | 2.3@10V|3.1@4.5V | Tape and Reel | 8 | TDSON EP | SON | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SMBTA14E6327HTSA1
Trans Darlington NPN 30V 0.3A 330mW Automotive AEC-Q101 3-Pin SOT-23 T/R
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Bestand
5.375
0,0545 €
pro Stück
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Infineon Technologies AG | Darlington BJT | NPN | Single | 30 | 30 | 1 | 0.3 | 10 | 2@0.1mA@100mA | 330 | 10000@10mA@5V|20000@100mA@5V | 1.5@0.1mA@100mA | Tape and Reel | 3 | SOT-23 | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF2907ZPBF
Trans MOSFET N-CH Si 75V 170A 3-Pin(3+Tab) TO-220AB Tube
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Bestand
2.700
1,3729 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 75 | ±20 | 4 | 300000 | 170 | 4.5@10V | 180@10V | 180 | 7500@25V | 3.5@10V | Tube | 3 | TO-220AB | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IAUZ40N08S5N100ATMA1
Trans MOSFET N-CH 80V 40A Automotive 8-Pin TSDSON EP T/R
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Bestand
5.000
0,6511 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 80 | ±20 | 68000 | 40 | 10@10V | 18.6@10V | 18.6 | 1224@40V | Tape and Reel | 8 | TSDSON EP | SON | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB120N06S403ATMA2
Trans MOSFET N-CH 60V 120A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
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Bestand
1.000
1,0182 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 60 | ±20 | 4 | 167000 | 120 | 2.8@10V | 125@10V | 0.9 | 125 | 10120@25V | 2.3@10V|2.6@10V | Tape and Reel | 3 | D2PAK | TO | No | Unknown | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IKN01N60RC2ATMA1
Reverse Conducting Drive 2 offering Cost Effective IGBT
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Bestand
2.945
0,1756 €
pro Stück
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Infineon Technologies AG | IGBT-Chip | 3 | SOT-223 | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSC0993NDATMA1
Trans MOSFET N-CH 30V 17A 8-Pin TISON EP T/R
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Bestand
10.000
Von 0,3311 € bis 0,3719 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Dual | Enhancement | 2 | 30 | 20 | 50 | 2 | 2500 | 17 | 5@10V | 6.7@4.5V|13@10V | 13 | 870@15V | 4.2@10V|5.6@4.5V | 8 | TISON EP | SON | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPT60R160CM8XTMA1
Trans MOSFET N-CH 600V 19A 9-Pin(8+Tab) HSOF T/R
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Bestand
2.000
Von 0,8694 € bis 1,5703 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Seven Source | Enhancement | 1 | 600 | 20 | 124000 | 19 | 160@10V | 18@10V | 18 | 785@400V | Tape and Reel | 9 | HSOF | Unknown | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IMBG120R140M1HXTMA1
Trans MOSFET N-CH SiC 1.2KV 18A 8-Pin(7+Tab) TO-263 T/R
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Bestand
610
Von 2,6319 € bis 1,1116 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | SiC | N | Single Hex Source | Enhancement | 1 | 1200 | 18 | 62 | 107000 | 18 | 189@18V | 13.4@18V | 491@800V | TMOS | Tape and Reel | 8 | TO-263 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPSA70R900P7SAKMA1
Trans MOSFET N-CH 700V 6A 3-Pin(3+Tab) TO-251 Tube
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Bestand
500
0,209 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 700 | 16 | 62 | 3.5 | 30500 | 6 | 900@10V | 6.8@10V | 6.8 | 211@400V | 740@10V | Tube | 3 | TO-251 | TO | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPTC012N08NM5ATMA1
OptiMOS™ 5 power MOSFET in TOLT package for higher thermal cycling on board performance
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Bestand
1.800
Von 3,8376 € bis 6,6964 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Octal Drain Seven Source | Enhancement | 1 | 80 | 20 | 3800 | 40 | 1.2@10V | 175@10V | 175 | 12000@40V | Tape and Reel | 16 | HDSOP EP | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IKD10N60RC2ATMA1
Cost Effective Monolithic Integrated IGBT with Diode
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Bestand
1.829
Von 0,3081 € bis 0,1504 €
pro Stück
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Infineon Technologies AG | IGBT-Chip | Tape and Reel | 3 | DPAK | TO | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPP60R280P6XKSA1
Trans MOSFET N-CH 600V 13.8A 3-Pin(3+Tab) TO-220 Tube
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Bestand
1.350
Von 0,8128 € bis 0,832 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 600 | 20 | 62 | 4.5 | 104000 | 13.8 | 280@10V | 25.5@10V | 1.2 | 25.5 | 1190@100V | 252@10V | Tube | 3 | TO-220 | TO | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPN80R2K4P7ATMA1
Trans MOSFET N-CH 800V 2.5A 3-Pin(2+Tab) SOT-223 T/R
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Bestand
1.803
Von 0,2928 € bis 0,9356 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 800 | 20 | 160 | 3.5 | 6300 | 2.5 | 2400@10V | 7.5@10V | 7.5 | 150@500V | 2000@10V | Tape and Reel | 3 | SOT-223 | SOT | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPT059N15N3ATMA1
Trans MOSFET N-CH 150V 155A 9-Pin(8+Tab) HSOF T/R
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Bestand
1.230
Von 2,0441 € bis 3,0467 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Seven Source | Enhancement | 1 | 150 | 20 | 62 | 4 | 375000 | 155 | 5.9@10V | 69@10V | 0.4 | 69 | 5400@75V | 5.2@8V|5@10V | Tape and Reel | 9 | HSOF | SO | No | No | Unknown | Yes | Unknown | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFSL4010PBF
Trans MOSFET N-CH 100V 180A 3-Pin(3+Tab) TO-262 Tube
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Bestand
1.400
123,0426 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 100 | ±20 | 4 | 375000 | 180 | 4.7@10V | 143@10V | 0.4 | 143 | 9575@50V | Tube | 3 | TO-262 | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB65R095C7ATMA2
Trans MOSFET N-CH 650V 24A 3-Pin(2+Tab) D2PAK T/R
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Bestand
1.000
2,19 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 650 | 20 | 62 | 4 | 128000 | 24 | 95@10V | 45@10V | 45 | 2140@400V | 84@10V | Tape and Reel | 3 | D2PAK | TO | No | No | No | No | EAR99 | Yes | Yes |