NXP Semiconductors Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Maximum Rate of Rise of Off-State Voltage - (V/us) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Material | Frequency Band | Channel Type | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Current - (mA) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Maximum Reverse Current - (uA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Number of Elements per Chip | Mode of Operation | Minimum Tuning Ratio | Maximum Voltage Regulation - (mV) | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Peak Reverse Current - (uA) | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Regulator Current - (mA) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation - (mW) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Typical Carrier Life Time - (us) | RMS On-State Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Repetitive Peak Off-State Current - (mA) | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Power 1dB Compression - (dBm) | Maximum Frequency - (MHz) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Z0103MN0,135
TRIAC 600V 1A(RMS) 13.8A 4-Pin(3+Tab) SC-73 T/R
|
|
NXP Semiconductors | TRIACs | 80(Min) | 50 | 1 | 600 | 5 | 7 | 1.6@1A | 1 | 600 | 0.5 | Tape and Reel | 4 | SC-73 | No | Unknown | Unknown | Unknown | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRFE6S9160HSR3
Trans RF MOSFET N-CH 66V 3-Pin NI-780S T/R
|
|
NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 1-Carrier N-CDMA|GSM|GSM EDGE|IS-95 CDMA|N-CDMA | 66 | 12 | 21 | 865 | 35(Typ) | 960 | Tape and Reel | 3 | NI-780S | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BLF6G10LS-135R,112
Trans RF MOSFET N-CH 65V 32A 3-Pin SOT-502B Blister
|
|
NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 2-Carrier W-CDMA | 65 | 13 | 32 | 100(Typ)@6.15V | 21 | 700 | 26.5(Typ) | 1000 | 0.14um | Blister | 3 | SOT-502B | SOT | No | No | Unknown | Unknown | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BYV415W-600PQ
Diode Switching 600V 30A 3-Pin(3+Tab) TO-247
|
|
NXP Semiconductors | Gleichrichter | Switching Diode | Dual Common Cathode | 600 | 30 | 150 | 2.1@15A | 10 | 50 | 3 | TO-247 | No | No | Unknown | Unknown | Unknown | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BF512,215
Trans JFET N-CH 20V 30mA Si 3-Pin TO-236AB T/R
|
|
NXP Semiconductors | JFETs | Si | N | Single | 20 | 20 | 430 | 250 | 30 | 1.5(Typ) | Tape and Reel | 3 | TO-236AB | TO | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PMN23UN,135
Trans MOSFET N-CH 20V 6.3A 6-Pin TSOP T/R
|
|
NXP Semiconductors | MOSFETs | Power MOSFET | N | Single Quad Drain | Enhancement | 1 | 20 | ±8 | 1750 | 6.3 | 28@4.5V | 10.6@4.5V | 740@10V | Tape and Reel | 6 | TSOP | SO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PMDPB38UNE,115
Trans MOSFET N-CH 20V 4A 6-Pin HUSON EP T/R
|
|
NXP Semiconductors | MOSFETs | Power MOSFET | N | Dual Dual Drain | Enhancement | 2 | 20 | 8 | 1 | 1200 | 4 | 46@4.5V | 2.9@4.5V | 268@10V | Tape and Reel | 6 | HUSON EP | SON | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AFT21S220W02GSR3 Trans RF MOSFET N-CH 65V 3-Pin NI-780GS T/R |
|
NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 1-Carrier W-CDMA | 65 | 10 | 1.6 | 19.1 | 2110 | 50(Typ) | 2170 | Tape and Reel | 3 | NI-780GS | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRFX1K80H-27MHZ
Trans RF MOSFET N-CH 179V 5-Pin NI-1230H
|
Von 1.823,4614 € bis 2.191,6486 €
pro Stück
|
NXP Semiconductors | HF-MOSFETs | MOSFET | N | Dual Common Source | Enhancement | 2 | CW | 179 | 10 | 2247000 | 760@65V | 27.8 | 1.8 | 1800(Typ) | 400 | 5 | NI-1230H | No | No | No | No | 3B992 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFG505,215
Trans RF BJT NPN 15V 0.018A 150mW 4-Pin(3+Tab) SOT-143B T/R
|
|
NXP Semiconductors | HF-BJT | NPN | Si | Single Dual Emitter | 15 | 20 | 1 | 2.5 | 0.018 | 150 | 50 to 120 | 60@5mA@6V | 20 | 9000(Typ) | 2.1 | Tape and Reel | 4 | SOT-143B | SOT | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAT54A,215
Diode Schottky 0.2A 3-Pin SOT-23 T/R
|
|
NXP Semiconductors | Gleichrichter | Schottky Diode | Dual Common Anode | 0.2 | 0.6 | 0.8@0.1A | 2@25V | 500K/W | 250 | 10 | 5 | Tape and Reel | 3 | SOT-23 | SOT | No | Yes | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A3V07H600-42NR6 Trans RF MOSFET N-CH 105V 6-Pin DFM T/R |
|
NXP Semiconductors | HF-MOSFETs | 6 | DFM | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAT54
Diode Schottky 0.2A 3-Pin SOT-23
|
|
NXP Semiconductors | Gleichrichter | Schottky Diode | Single | 0.2 | 0.6 | 0.8@0.1A | 2@25V | 500K/W | 250 | 10 | 5 | 3 | SOT-23 | SOT | Yes | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MHT1803A
Trans RF MOSFET 50V 3-Pin(3+Tab) SIL Tube
|
18,3868 €
pro Stück
|
NXP Semiconductors | HF-MOSFETs | Single | 1 | CW | 50 | 28.2 | 1.8 | 330(Typ) | 50 | Tube | 3 | SIL | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC869,115
Trans GP BJT PNP 20V 2A 1350mW 4-Pin(3+Tab) SOT-89 T/R Automotive AEC-Q101
|
|
NXP Semiconductors | GP BJT | PNP | Bipolar Power | Single Dual Collector | 20 | 32 | 1 | 5 | 2 | 250 | 1350 | 30 to 50|50 to 120 | 50@5mA@10V|85@500mA@1V|60@1A@1V|40@2A@1V | 28 | 0.5@100mA@1A|0.6@200mA@2A | Tape and Reel | 4 | SOT-89 | SOT | No | Yes | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
PBSS5240TVL
Trans GP BJT PNP 40V 2A 480mW 3-Pin SOT-23 T/R
|
|
NXP Semiconductors | GP BJT | PNP | Bipolar Small Signal | Single | 40 | 40 | 1 | 5 | 1.1@200mA@2A | 2 | 417 | 480 | 50 to 120|120 to 200|200 to 300|300 to 500 | 300@100mA@2V|260@500mA@2V|210@1A@2V|100@2A@2V | 0.1@1mA@100mA|0.11@50mA@500mA|0.225@15mA@750mA|0.225@50mA@1A|0.35@200mA@2A | Tape and Reel | 3 | SOT-23 | SOT | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF8P9210NR3
Trans RF MOSFET N-CH 70V 5-Pin OM-780 EP T/R
|
|
NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 1-Carrier W-CDMA | 70 | 10 | 3 | 16.8 | 920 | 63 | 960 | Tape and Reel | 5 | OM-780 EP | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BB208-03,115
Varactor Diode Single 10V 19.9pF 2-Pin SOD-323 T/R
|
|
NXP Semiconductors | Varaktors | TCXO|VCO|VCXO | Single | 10 | 0.01 | 0.02 | 3.7 | 1V/7.5V | 19.9@1V | Tape and Reel | 2 | SOD-323 | SOD | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MHT1003NR3
Trans RF MOSFET N-CH 65V 3-Pin OM-780 EP T/R
|
|
NXP Semiconductors | HF-MOSFETs | MOSFET | N | Enhancement | CW | 65 | 10 | 1.6 | 769000 | 15.9 | 2400 | 250(Typ) | 2500 | Tape and Reel | 3 | OM-780 EP | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMRF1050HR6
Trans RF MOSFET N-CH 105V 5-Pin CFM T/R
|
Von 837,7059 € bis 1.006,8608 €
pro Stück
|
NXP Semiconductors | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | Pulse | 105 | 10 | 21.3 | 850 | 1050(Typ) | 950 | Tape and Reel | 5 | CFM | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A5G26H110NT4 Air Fast RF Power GAN Transistor |
|
NXP Semiconductors | HF-BJT | 2690 | 6 | DFN EP | DFN | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A5G07H800W19NR3 RF Power GaN Transistor |
|
NXP Semiconductors | HF-BJT | 8 | OM-780 EP | No | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A2V09H525-04NR6 Trans RF MOSFET N-CH 105V 5-Pin Case OM-1230 L T/R |
|
NXP Semiconductors | HF-MOSFETs | MOSFET | N | Enhancement | 1-Carrier W-CDMA | 105 | 10 | 18.9 | 720 | 120(Typ) | 960 | Tape and Reel | 5 | Case OM-1230 L | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A2V09H400-04NR3 Trans RF MOSFET N-CH 105V 5-Pin OM-780 EP T/R |
|
NXP Semiconductors | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | 1-Carrier W-CDMA | 105 | 10 | 17.9 | 720 | 107 | 960 | Tape and Reel | 5 | OM-780 EP | No | No | No | No | 5A991g. | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
A5G35S004NT6
Air Fast RF Power GAN Transistor
|
12,585 €
pro Stück
|
NXP Semiconductors | HF-BJT | 4300 | Tape and Reel | No | 5A991g. | Yes | No |