NXP Semiconductors Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Maximum Rate of Rise of Off-State Voltage - (V/us) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Material | Frequency Band | Channel Type | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Current - (mA) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Maximum Reverse Current - (uA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Number of Elements per Chip | Mode of Operation | Minimum Tuning Ratio | Maximum Voltage Regulation - (mV) | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Peak Reverse Current - (uA) | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Regulator Current - (mA) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation - (mW) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Typical Carrier Life Time - (us) | RMS On-State Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Repetitive Peak Off-State Current - (mA) | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Power 1dB Compression - (dBm) | Maximum Frequency - (MHz) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
PSMN3R7-30YLC,115
Trans MOSFET N-CH 30V 100A 5-Pin(4+Tab) LFPAK T/R
|
|
NXP Semiconductors | MOSFETs | Power MOSFET | N | Single Triple Source | Enhancement | 1 | 30 | 20 | 1.95 | 79000 | 100 | 3.95@10V | 14@4.5V|27@10V|29@10V | 27|29 | 1848@15V | Tape and Reel | 5 | LFPAK | FPAK | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BB208-03,135
Varactor Diode Single 10V 19.9pF 2-Pin SOD-323 T/R
|
|
NXP Semiconductors | Varaktors | TCXO|VCO|VCXO | Single | 10 | 0.01 | 0.02 | 3.7 | 1V/7.5V | 19.9@1V | Tape and Reel | 2 | SOD-323 | SOD | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PMN45EN,135
Trans MOSFET N-CH 30V 5.2A 6-Pin TSOP T/R
|
|
NXP Semiconductors | MOSFETs | Power MOSFET | N | Single Quad Drain | Enhancement | 1 | 30 | 20 | 1750 | 5.2 | 40@10V | 6.1@4.5V | 495@25V | Tape and Reel | 6 | TSOP | SO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BB199,115
Varactor Diode Single 20V 36.5pF 2-Pin SOD-523 T/R
|
|
NXP Semiconductors | Varaktors | VCO|VCXO | Single | 20 | 1 | 0.1 | 2.8 | 0.5V/2V | 36.5@0.5V | Tape and Reel | 2 | SOD-523 | SOD | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PMDPB42UN,115
Trans MOSFET N-CH 20V 3.9A 6-Pin HUSON EP T/R
|
|
NXP Semiconductors | MOSFETs | Small Signal | N | Dual Dual Drain | Enhancement | 2 | 20 | 8 | 1 | 1165 | 3.9 | 50@4.5V | 2@4.5V | 185@10V | Tape and Reel | 6 | HUSON EP | SON | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NXPS20H110C,127
Diode Schottky 110V 20A 3-Pin(3+Tab) TO-220AB Rail
|
|
NXP Semiconductors | Gleichrichter | Schottky Diode | Dual Common Cathode | 110 | 20 | 250 | 0.88 | 6 | Rail | 3 | TO-220AB | TO | No | Unknown | Unknown | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFR92AW,135
Trans RF BJT NPN 15V 0.025A 300mW 3-Pin SC-70 T/R
|
|
NXP Semiconductors | HF-BJT | NPN | Si | Single | 15 | 20 | 1 | 2 | 0.025 | 10V/15mA | 300 | 50 to 120 | 65@15mA@10V | 0.6 | 5000(Typ) | 3(Typ) | Tape and Reel | 3 | SC-70 | SOT | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAP1321-03,115
Diode PIN Attenuator/Switch 60V 100mA 2-Pin SOD-323 T/R
|
|
NXP Semiconductors | PIN | Attenuator|Switch | SHF | Single | 60 | 100 | 1.3@100mA | 1.1@50mA | 5@0.5mA | 500 | 0.32@20V | 0.5 | 2 | SOD-323 | SOD | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PMPB12UN,115
Trans MOSFET N-CH 20V 7.9A 6-Pin DFN-MD EP T/R
|
|
NXP Semiconductors | MOSFETs | Power MOSFET | N | Single Quad Drain | Enhancement | 1 | 20 | 8 | 1 | 3500 | 7.9 | 18@4.5V | 8.8@4.5V | 886@10V | Tape and Reel | 6 | DFN-MD EP | DFN | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLC8G27LS-245AVJ TRANS RF 240W 65V LDMOS SOT1251 |
|
NXP Semiconductors | HF-MOSFETs | 7 | DFM | No | Unknown | No | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PBLS4001V,115
Trans Digital BJT NPN/PNP 50V 0.1A/0.5A 300mW 6-Pin SOT-666 T/R Automotive AEC-Q101
|
|
NXP Semiconductors | Digital-BJT | NPN|PNP | Dual | 50@NPN|40@PNP | 0.5@PNP|0.1@NPN | 2.2 | 1.2@50mA@500mA | 1 | 300 | 30@20mA@5V@NPN|40@500mA@2V|150@100mA@2V|200@10mA@2V@PNP | 0.35@50mA@500mA@PNP|0.15@0.5mA@10mA@NPN | Tape and Reel | 6 | SOT-666 | SOT | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BF909AWR,115
Trans RF MOSFET N-CH 7V 0.04A 4-Pin(3+Tab) CMPAK T/R
|
|
NXP Semiconductors | HF-MOSFETs | N | Dual | Enhancement | 2 | 7 | 6 | 280 | 0.04 | 1000 | 2.8 | Tape and Reel | 4 | CMPAK | SOT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AFT27S010NT1
Trans RF MOSFET N-CH 65V 3-Pin PLD-1.5W T/R
|
|
NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 1-Carrier W-CDMA | 65 | 10 | 1.6 | 21.7 | 728 | 1.26(Typ) | 3600 | Tape and Reel | 3 | PLD-1.5W | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRFE6S9135HR3
Trans RF FET N-CH 66V 3-Pin NI-780S T/R
|
|
NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 1-Carrier W-CDMA | 66 | 12 | 343@28V | 21 | 180 | 1000 | Tape and Reel | 3 | NI-780S | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1N4148,133
Diode Switching 100V 0.2A 2-Pin ALF Ammo
|
|
NXP Semiconductors | Gleichrichter | Switching Diode | Single | 100 | 0.2 | 4 | 1@0.01A | 0.025@20V | 500 | 4 | Ammo | 2 | ALF | DO | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MW6S010GNR1
Trans RF MOSFET N-CH 68V 3-Pin TO-270 GULL T/R
|
Von 21,6872 € bis 22,7902 €
pro Stück
|
NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 2-Tone | 68 | 12 | 61400 | 23@28V | 20 | 450 | 10(Typ) | 1500 | Tape and Reel | 3 | TO-270 GULL | TO | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A2T18H160-24SR3 High Reliability RF FET IC |
|
NXP Semiconductors | HF-MOSFETs | 1805 | 1880 | Tape and Reel | 7 | CFMF | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAV99/8,215
Diode Switching 100V 0.215A 3-Pin SOT-23 T/R
|
|
NXP Semiconductors | Gleichrichter | Switching Diode | Dual Series | 100 | 0.215 | 4 | 1.25@0.15A | 0.5@80V | 500K/W | 250 | 1.5 | 4 | 3 | SOT-23 | SOT | Unknown | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BYV29-500,127
Diode Switching 500V 9A 2-Pin(2+Tab) TO-220AC Rail
|
|
NXP Semiconductors | Gleichrichter | Switching Diode | Single | 500 | 9 | 110 | 1.4@20A | 50 | 60K/W(Typ) | 60 | 2 | TO-220AC | TO | No | Unknown | No | Unknown | Unknown | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NXPSC04650DJ Diode Schottky 650V 4A 3-Pin(2+Tab) DPAK |
|
NXP Semiconductors | Gleichrichter | 1.7@4A | 3 | DPAK | TO | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMRF1316NR1
Trans RF MOSFET N-CH 133V 4-Pin TO-270 WB EP T/R
|
|
NXP Semiconductors | HF-MOSFETs | N | Enhancement | Pulse | 133 | 10 | 2.8 | 909000 | 168@50V | 27 | 1.8 | 361(Typ) | 600 | 4 | TO-270 WB EP | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BZV55-B7V5,115
Diode Zener Single 7.5V 2% 500mW 2-Pin Mini-MELF T/R
|
|
NXP Semiconductors | Zener | Voltage Regulator | Single | 7.5 | 2% | 5 | 0.9 | 1 | 15 | 500 | 150 | Tape and Reel | 2 | Mini-MELF | MELF | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAT54A,215
Diode Schottky 0.2A 3-Pin SOT-23 T/R
|
|
NXP Semiconductors | Gleichrichter | Schottky Diode | Dual Common Anode | 0.2 | 0.6 | 0.8@0.1A | 2@25V | 500K/W | 250 | 10 | 5 | Tape and Reel | 3 | SOT-23 | SOT | No | Yes | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC807-25,215
Trans GP BJT PNP 45V 0.5A 345mW 3-Pin SOT-23 T/R
|
|
NXP Semiconductors | GP BJT | PNP | Bipolar Small Signal | Single | 45 | 50 | 1 | 5 | 0.5 | 500 | 345 | 30 to 50|50 to 120|120 to 200 | 160@100mA@1V|40@500mA@1V | 5 | 0.7@50mA@500mA | Tape and Reel | 3 | SOT-23 | SOT | No | Yes | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PH2625L,115
Trans MOSFET N-CH 25V 100A 5-Pin(4+Tab) LFPAK T/R
|
|
NXP Semiconductors | MOSFETs | Power MOSFET | N | Single Triple Source | Enhancement | 1 | 25 | 20 | 62500 | 100 | 2.8@10V | 32@4.5V | 4308@12V|4830@0V | Tape and Reel | 5 | LFPAK | FPAK | No | No | No | No | No | EAR99 | Yes | Yes |