NXP Semiconductors Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Maximum Rate of Rise of Off-State Voltage - (V/us) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Material | Frequency Band | Channel Type | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Current - (mA) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Maximum Reverse Current - (uA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Number of Elements per Chip | Mode of Operation | Minimum Tuning Ratio | Maximum Voltage Regulation - (mV) | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Peak Reverse Current - (uA) | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Regulator Current - (mA) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation - (mW) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Typical Carrier Life Time - (us) | RMS On-State Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Repetitive Peak Off-State Current - (mA) | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Power 1dB Compression - (dBm) | Maximum Frequency - (MHz) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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| A3G18H500-04SR3 RF Power GaN FET Transistor |
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NXP Semiconductors | HF-MOSFETs | 1805 | 2200 | Tape and Reel | 5 | CFMF | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BT151-500R,127
SCR 500V 12A(RMS) 132A 3-Pin(3+Tab) TO-220AB Rail
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NXP Semiconductors | Silicon Controlled Rectifiers - SCRs | 1000(Typ) | 50 | 1.5 | 500 | 15 | 20 | 1.75@23A | 5 | 12 | 500 | 7.5 | 0.5 | Rail | 3 | TO-220AB | TO | Unknown | No | Unknown | Unknown | Unknown | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AFT09MP055NR1
Trans RF MOSFET N-CH 40V 5-Pin TO-270 W T/R
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Von 26,0238 € bis 31,2753 €
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NXP Semiconductors | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | CW | 40 | 12 | 2.6 | 625000 | 690@12.5V | 17.5(Max) | 764 | 57(Typ) | 941 | Tape and Reel | 5 | TO-270 W | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFU730LXZ
Trans RF BJT NPN 3V 0.03A 160mW 3-Pin DFN_C T/R
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NXP Semiconductors | HF-BJT | NPN | SiGe | Single | 3 | 10 | 1 | 1.3 | 0.03 | 160 | 200 to 300 | 205@2mA@2V | 0.084 | 24.5 | 11.7(Typ) | 25.5 | 53000(Typ) | 0.75(Typ) | Tape and Reel | 3 | DFN_C | DFN | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MRF6S18060NR1
Trans RF FET N-CH 68V 5-Pin TO-270 W T/R
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NXP Semiconductors | HF-MOSFETs | N | Single Dual Drain Dual Gate | Enhancement | 1 | GSM|GSM EDGE | 68 | 12 | 216000 | 15|15.5 | 1800 | 60(Typ) | 2000 | Tape and Reel | 5 | TO-270 W | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF7S24250NR3
Trans RF MOSFET N-CH 65V Medical 3-Pin OM-780 EP T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | CW | 65 | 10 | 1.2(Typ) | 769 | 14.7 | 2400 | 319 | 2450 | Tape and Reel | 3 | OM-780 EP | No | Yes | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MRFE6S9060GNR1 Trans RF MOSFET N-CH 66V 3-Pin TO-270 T/R |
Von 45,8947 € bis 55,1672 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | MOSFET | N | Single | Enhancement | 1 | 1-Carrier N-CDMA|CW|GSM EDGE | 66 | 12 | 109@28V | 20|21.1 | 470 | 14(Typ) | 1000 | Tape and Reel | 3 | TO-270 | TO | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRFX1K80NR5
Trans RF MOSFET N-CH 179V 5-Pin Case OM-1230 T/R
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Von 216,648 € bis 223,6241 €
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NXP Semiconductors | HF-MOSFETs | MOSFET | N | Enhancement | CW | 179 | 10 | 3333000 | 765@65V | 24.4 | 1.8 | 1800(Typ) | 400 | Tape and Reel | 5 | Case OM-1230 | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF5S9080NBR1
Trans RF MOSFET N-CH 65V 5-Pin TO-272 W T/R
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NXP Semiconductors | HF-MOSFETs | N | Single Dual Drain Dual Gate | Enhancement | 1 | GSM|GSM EDGE | 65 | 15 | 18.5|19 | 869 | 80 | 960 | Tape and Reel | 5 | TO-272 W | TO | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF1K50GNR5
Trans RF MOSFET N-CH 133V 4-Pin Case OM-1230G L T/R
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NXP Semiconductors | HF-MOSFETs | MOSFET | N | Enhancement | Pulse | 133 | 10 | 2941000 | 683@50V | 23 | 1.8 | 1500(Typ) | 500 | Tape and Reel | 4 | Case OM-1230G L | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRFE6VS25NR1
Trans RF MOSFET N-CH 133V 3-Pin TO-270 T/R
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Von 82,5082 € bis 88,4444 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 2-Tone|Pulse|CW | 133 | 10 | 2.5 | 39.2@50V | 25.4 | 1.8 | 25(Typ) | 2000 | Tape and Reel | 3 | TO-270 | TO | No | Yes | No | No | No | No | 5A991g. | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AFT26H250-24SR6 Trans RF MOSFET N-CH 65V 7-Pin NI-1230 T/R |
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NXP Semiconductors | HF-MOSFETs | N | Enhancement | 1-Carrier W-CDMA | 65 | 10 | 1.6 | 14.1 | 2496 | 50(Typ) | 2690 | Tape and Reel | 7 | NI-1230 | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFU520XVL
Trans RF BJT NPN 16V 0.05A 450mW Automotive AEC-Q101 4-Pin(3+Tab) SOT-143B T/R
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NXP Semiconductors | HF-BJT | NPN | Si | Single Dual Emitter | 16 | 30 | 1 | 3 | 0.05 | 8V/10mA | 450 | 50 to 120 | 60@5mA@8V | 0.52 | 26 | 9.5(Typ) | 19.5 | 10500(Typ) | 1.1(Min) | Tape and Reel | 4 | SOT-143B | SOT | No | No | Yes | AEC-Q101 | Yes | Yes | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF8P20160HR3
Trans RF MOSFET N-CH 65V 5-Pin Case 465M-01 T/R
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NXP Semiconductors | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | 1-Carrier W-CDMA | 65 | 10 | 16.5 | 1880 | 37(Typ) | 2025 | Tape and Reel | 5 | Case 465M-01 | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BT150-500R,127
SCR Diode 500V 4A(RMS) 38A 3-Pin(3+Tab) TO-220AB Rail
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NXP Semiconductors | Silicon Controlled Rectifiers - SCRs | 50(Typ) | 50 | 1.5 | 500 | 0.2 | 6 | 1.8@5A | 5 | 4 | 500 | 2.5 | 0.5 | Rail | 3 | TO-220AB | TO | No | Unknown | No | Unknown | Unknown | Unknown | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRFX1K80H-128MHZ
Trans RF MOSFET N-CH 179V 5-Pin NI-1230H
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1.637,8589 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | MOSFET | N | Dual Common Source | Enhancement | 2 | Pulse | 179 | 10 | 2247000 | 760@65V | 25.9 | 1.8 | 1800(Typ) | 400 | 5 | NI-1230H | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A2T23H300-24SR6 RF POWER LDMOS TRANSISTOR |
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NXP Semiconductors | HF-MOSFETs | 14.9 | 2300 | 2400 | Tape and Reel | 7 | NI-1230 | No | Yes | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AFT26HW050SR3
Trans RF MOSFET N-CH 65V 9-Pin NI-780-4S4 T/R
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NXP Semiconductors | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | 1-Carrier W-CDMA | 65 | 10 | 2.5 | 14.2 | 2620 | 9(Typ) | 2690 | Tape and Reel | 9 | NI-780-4S4 | No | No | No | No | No | 5A991g. | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF6P24190HR6
Trans RF MOSFET N-CH 68V 5-Pin NI-1230 T/R
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NXP Semiconductors | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | 2-Carrier W-CDMA | 68 | 12 | 14 | 190(Typ) | 2450 | Tape and Reel | 5 | NI-1230 | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MRF6VP3091NR1
Trans RF MOSFET N-CH 115V 5-Pin TO-270 W T/R
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NXP Semiconductors | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | DVB-T OFDM | 115 | 10 | 591@50V | 22 | 470 | 18(Typ) | 860 | Tape and Reel | 5 | TO-270 W | TO | No | No | No | No | No | 5A991g. | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF7S18170HR3
Trans RF MOSFET N-CH 65V 3-Pin NI-880 T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 1-Carrier W-CDMA | 65 | 10 | 17.5 | 1805 | 170 | 1880 | Tape and Reel | 3 | NI-880 | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF7S19170HSR3
Trans RF MOSFET N-CH 65V 3-Pin NI-880S T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 1-Carrier W-CDMA | 65 | 10 | 17.2 | 1930 | 170 | 1990 | Tape and Reel | 3 | NI-880S | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF7S27130HSR3
Trans RF MOSFET N-CH 65V 3-Pin NI-780S T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | BWA|OFDM|WIBRO|WIMAX | 65 | 10 | 326@28V | 16.5 | 2500 | 105 | 2700 | Tape and Reel | 3 | NI-780S | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF8P20100HSR3
Trans RF FET N-CH 65V 5-Pin Case 465H-02 T/R
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NXP Semiconductors | HF-MOSFETs | N | Enhancement | 1-Carrier W-CDMA|GSM EDGE | 65 | 10 | 16 | 1805 | 20(Typ) | 2025 | Tape and Reel | 5 | Case 465H-02 | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF8P20160HSR3
Trans RF FET N-CH 65V 5-Pin Case 465H-02 T/R
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NXP Semiconductors | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | 1-Carrier W-CDMA | 65 | 10 | 16.5 | 1880 | 37(Typ) | 2025 | Tape and Reel | 5 | Case 465H-02 | No | No | No | No | No | EAR99 | Yes | No |