NXP Semiconductors Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Material | Frequency Band | Channel Type | Repetitive Peak Off-State Current - (mA) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Regulator Current - (mA) | Maximum Gate Trigger Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Number of Elements per Chip | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (mA) | Maximum Collector-Base Voltage - (V) | Mode of Operation | Minimum Tuning Ratio | Maximum Voltage Regulation - (mV) | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Continuous DC Collector Current - (A) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Peak On-State Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Typical Carrier Life Time - (us) | Repetitive Peak Forward Blocking Voltage - (V) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Rated Average On-State Current - (A) | Maximum Junction Ambient Thermal Resistance | RMS On-State Current - (A) | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Power 1dB Compression - (dBm) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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BT169B,126
SCR Diode 200V 0.8A(RMS) 9A 3-Pin SPT Ammo
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NXP Semiconductors | Silicon Controlled Rectifiers - SCRs | 50 | 800(Typ) | 0.1 | 0.8 | 0.2 | 5 | 200 | 5 | 1.7@1.2A | 200 | 0.5 | 0.8 | Ammo | 3 | SPT | No | Unknown | No | Unknown | Unknown | Unknown | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BT131-800D,112
TRIAC 800V 13.7A 3-Pin TO-92 Bulk
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NXP Semiconductors | TRIACs | 0.5 | 1 | 7 | 10 | 800 | 1.5@1.4A | 800 | Bulk | 3 | TO-92 | No | Unknown | Unknown | Unknown | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BTA312-600B/DG,127
TRIAC 600V 12A(RMS) 110A 3-Pin(3+Tab) TO-220AB Rail
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NXP Semiconductors | TRIACs | 100 | 2000(Typ) | 0.5 | 1 | 50 | 60 | 600 | 1.6@15A | 600 | 12 | Rail | 3 | TO-220AB | TO | No | Unknown | Unknown | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF8S18120HSR3
Trans RF MOSFET N-CH 65V 3-Pin NI-780S T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | GSM|GSM EDGE | 65 | 10 | 1805 | 72(Typ) | 18.2 | Tape and Reel | 3 | NI-780S | No | No | No | No | No | 5A991g. | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PSMN3R2-25YLC,115
Trans MOSFET N-CH 25V 100A 5-Pin(4+Tab) LFPAK T/R
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NXP Semiconductors | MOSFETs | Power MOSFET | N | Single Triple Source | Enhancement | 1 | 25 | 20 | 100 | 3.4@10V | 30@10V|14@4.5V|26@10V | 26|30 | 79000 | 1781@12V | Tape and Reel | 5 | LFPAK | FPAK | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFU530R
Trans RF BJT NPN 16V 0.065A 450mW Automotive AEC-Q101 4-Pin(3+Tab) SOT-143B T/R
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NXP Semiconductors | HF-BJT | NPN | Si | Single Dual Emitter | 16 | 1 | 30 | 3 | 0.065 | 8V/15mA | 50 to 120 | 60@10mA@8V | 0.93 | 450 | 0.65 | 10(Typ) | 26 | 19.5 | 11000(Typ) | 1.1(Min) | Tape and Reel | 4 | SOT-143B | SOT | No | No | Yes | AEC-Q101 | Yes | Yes | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A3T21H450W23SR6 Trans RF MOSFET N-CH 65V 6-Pin T/R |
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NXP Semiconductors | HF-MOSFETs | MOSFET | N | Enhancement | 1-Carrier W-CDMA | 65 | 10 | 2110 | 87(Typ) | 15.4 | 6 | No | No | No | No | 5A991g. | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BUK754R7-60E,127
Trans MOSFET N-CH 60V 100A 3-Pin(3+Tab) TO-220AB Rail Automotive AEC-Q101
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NXP Semiconductors | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 60 | 20 | 100 | 4.6@10V | 82@10V | 82 | 234000 | 4670@25V | Rail | 3 | TO-220AB | TO | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BFG505,215
Trans RF BJT NPN 15V 0.018A 150mW 4-Pin(3+Tab) SOT-143B T/R
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NXP Semiconductors | HF-BJT | NPN | Si | Single Dual Emitter | 15 | 1 | 20 | 2.5 | 0.018 | 50 to 120 | 60@5mA@6V | 150 | 20 | 9000(Typ) | 2.1 | Tape and Reel | 4 | SOT-143B | SOT | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BB178,315
Diode VAR Cap Single 35V 34.65pF 2-Pin SOD-523 T/R
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NXP Semiconductors | Varaktors | Tuner|VCO | UHF|VHF | Single | 35 | 0.01 | 13.5 | 1V/28V | 34.65@1V | Tape and Reel | 2 | SOD-523 | SOD | No | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BT138-800E/DG,127 TRIAC SENS GATE 800V 12A TO220AB |
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NXP Semiconductors | TRIACs | 3 | TO-220AB | TO | No | No | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMRF1021NT1
Trans RF MOSFET N-CH 30V 3-Pin PLD-1.5W T/R
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NXP Semiconductors | HF-MOSFETs | MOSFET | N | Enhancement | CW | 30 | 12 | 114000 | 107@7.5V | 136 | 7.3(Typ) | 15.6 | 3 | PLD-1.5W | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BTA204-600E,127
TRIAC 600V 27A 3-Pin(3+Tab) TO-220AB Rail
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NXP Semiconductors | TRIACs | 100 | 50(Min) | 0.5 | 1 | 25 | 12 | 600 | 1.7@5A | 600 | Rail | 3 | TO-220AB | TO | No | Unknown | Unknown | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BTA216-600D,127
TRIAC 600V 150A 3-Pin(3+Tab) TO-220AB Rail
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NXP Semiconductors | TRIACs | 100 | 30(Min) | 0.5 | 1.5 | 5 | 15 | 600 | 1.5@20A | 600 | Rail | 3 | TO-220AB | TO | No | Unknown | Unknown | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BLF6G10LS-135R,112
Trans RF MOSFET N-CH 65V 32A 3-Pin SOT-502B Blister
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 2-Carrier W-CDMA | 65 | 13 | 32 | 100(Typ)@6.15V | 700 | 26.5(Typ) | 21 | 0.14um | Blister | 3 | SOT-502B | SOT | No | No | Unknown | Unknown | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PMN23UN,135
Trans MOSFET N-CH 20V 6.3A 6-Pin TSOP T/R
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NXP Semiconductors | MOSFETs | Power MOSFET | N | Single Quad Drain | Enhancement | 1 | 20 | ±8 | 6.3 | 28@4.5V | 10.6@4.5V | 1750 | 740@10V | Tape and Reel | 6 | TSOP | SO | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BYV415W-600PQ
Diode Switching 600V 30A 3-Pin(3+Tab) TO-247
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NXP Semiconductors | Gleichrichter | Switching Diode | Dual Common Cathode | 600 | 30 | 150 | 2.1@15A | 10 | 50 | 3 | TO-247 | No | No | Unknown | Unknown | Unknown | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFG425W
Trans RF BJT NPN 4.5V 0.03A 135mW 4-Pin(3+Tab) CMPAK
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NXP Semiconductors | HF-BJT | NPN | Si | Single Dual Emitter | 4.5 | 1 | 10 | 1 | 0.03 | 2V/25mA | 50 to 120 | 50@25mA@2V | 0.575 | 135 | 0.3 | 12(Typ) | 20 | 22 | 25000(Typ) | 1.2(Typ) | 4 | CMPAK | SOT | No | Unknown | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PMDPB38UNE,115
Trans MOSFET N-CH 20V 4A 6-Pin HUSON EP T/R
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NXP Semiconductors | MOSFETs | Power MOSFET | N | Dual Dual Drain | Enhancement | 2 | 20 | 8 | 1 | 4 | 46@4.5V | 2.9@4.5V | 1200 | 268@10V | Tape and Reel | 6 | HUSON EP | SON | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFG541,115
Trans RF BJT NPN 15V 0.12A 650mW 4-Pin(3+Tab) SC-73 T/R
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NXP Semiconductors | HF-BJT | NPN | Si | Single Dual Emitter | 15 | 1 | 20 | 2.5 | 0.12 | 8V/40mA | 50 to 120 | 60@40mA@8V | 2 | 650 | 1 | 21(Typ) | 15 | 34 | 9000(Typ) | 1.8 | Tape and Reel | 4 | SC-73 | No | Unknown | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BF1102,115
Trans RF MOSFET N-CH 7V 0.04A 6-Pin TSSOP T/R
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NXP Semiconductors | HF-MOSFETs | N | Dual | Enhancement | 2 | 7 | 6 | 0.04 | 200 | 2.8@5V@Gate 1|7(Max)@5V@Gate 2 | 2.8 | Tape and Reel | 6 | TSSOP | SO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRFX1K80H-27MHZ
Trans RF MOSFET N-CH 179V 5-Pin NI-1230H
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Von 1.819,1784 € bis 2.186,5009 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | MOSFET | N | Dual Common Source | Enhancement | 2 | CW | 179 | 10 | 2247000 | 760@65V | 1.8 | 1800(Typ) | 27.8 | 5 | NI-1230H | No | No | No | No | 3B992 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BF1216,115
Trans RF MOSFET N-CH 6V 0.03A 6-Pin TSSOP T/R
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NXP Semiconductors | HF-MOSFETs | N | Dual | Enhancement | 2 | 6 | 1 | 0.03 | 180 | 2.5@5V@Gate 1|2.4@5V@Gate 2 | 34 | 5 | Tape and Reel | 6 | TSSOP | SO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRFG35002N6T1
High Reliability RF FET IC
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NXP Semiconductors | HF-MOSFETs | Tape and Reel | 4 | PLD-1.5 | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
ACT102H-600D,118
TRIAC 600V 8.8A 8-Pin SO T/R
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NXP Semiconductors | TRIACs | 50 | 300(Min) | 0.002 | 0.9 | 5 | 20 | 600 | 1.2@0.3A | 600 | Tape and Reel | 8 | SO | No | Unknown | Unknown | Unknown | EAR99 | No | No |