Toshiba Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Material | Frequency Band | Channel Type | Repetitive Peak Off-State Current - (mA) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Number of Elements per Chip | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (mA) | Maximum Collector-Base Voltage - (V) | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Continuous DC Collector Current - (A) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Peak On-State Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Rated Average On-State Current - (A) | Maximum Junction Ambient Thermal Resistance | RMS On-State Current - (A) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Maximum Output Power - (W) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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SSM3J375F,LXHF
Trans MOSFET P-CH Si 20V 2A 3-Pin S-Mini Automotive AEC-Q101
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Bestand
75
0,0568 €
pro Stück
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Toshiba | MOSFETs | Small Signal | Si | P | Single | Enhancement | 1 | 20 | 6 | 2 | 150@4.5V | 4.6@4.5V | 1200 | 270@10V | 3 | S-Mini | SOT | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK31V60W,LVQ
TK31V60W,LVQ Toshiba MOSFETs Transistor N-CH Si 600V 30.8A 5-Pin DFN EP T/R Si - Arrow.com
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Bestand
1.033
3,287 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Triple Source | Enhancement | 1 | 600 | ±30 | 3.7 | 30.8 | 98@10V | 86@10V | 86 | 240000 | 3000@300V | Tape and Reel | 5 | DFN EP | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3J331R,LF(T
Trans MOSFET P-CH Si 20V 4A 3-Pin SOT-23F T/R
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Bestand
27.000
0,048 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | P | Single | Enhancement | 1 | 20 | ±8 | 1 | 4 | 55@4.5V | 10.4@4.5V | 2000 | 630@10V | Tape and Reel | 3 | SOT-23F | SOT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN1425TE85LF
Trans Digital BJT NPN 50V 0.8A 200mW 3-Pin S-Mini T/R
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Bestand
5.140
Von 0,1144 € bis 0,4064 €
pro Stück
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Toshiba | Digital-BJT | NPN | Single | 50 | 0.47 | 0.047 | 0.8 | 90@100mA@1V | 200 | 0.25@1mA@50mA|0.25@2mA@50mA | Tape and Reel | 3 | S-Mini | SOT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TW048N65C,S1F
Trans MOSFET N-CH SiC 650V 40A 3-Pin(3+Tab) TO-247
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Bestand
30
7,5428 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | SiC | N | Single | Enhancement | 1 | 650 | 25 | 40 | 65@18V | 41@18V | 132000 | 1362@400V | 3 | TO-247 | TO | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TBAT54,LM(T
Diode Small Signal Schottky 35V 0.2A 3-Pin SOT-23 T/R
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Bestand
2.945
Von 0,0404 € bis 0,0718 €
pro Stück
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Toshiba | Gleichrichter | Small Signal Schottky Diode | Single | 35 | 0.2 | 1 | 0.58@0.1A | 2 | 1.5 | 320 | Tape and Reel | 3 | SOT-23 | SOT | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TW027N65C,S1F(S
Trans MOSFET N-CH SiC 650V 58A 3-Pin(3+Tab) TO-247
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Bestand
20
Von 23,9179 € bis 31,4573 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | SiC | N | Single | Enhancement | 1 | 650 | 25 | 58 | 37@18V | 65@18V | 156000 | 2288@400V | 3 | TO-247 | TO | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK31N60W5,S1VF(S
Trans MOSFET N-CH Si 600V 30.8A 3-Pin(3+Tab) TO-247
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Bestand
30
Von 2,6864 € bis 3,891 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 4.5 | 30.8 | 99@10V | 105@10V | 105 | 230000 | 3000@300V | DTMOSIV | 3 | TO-247 | TO | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK9J90E,S1E(S
Trans MOSFET N-CH Si 900V 9A 3-Pin(3+Tab) TO-3PN
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Bestand
25
Von 1,5659 € bis 1,819 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 900 | ±30 | 4 | 9 | 1300@10V | 46@10V | 46 | 250000 | 2000@25V | pi-MOS VIII | 3 | TO-3PN | TO | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TW030N120C,S1F
Trans MOSFET N-CH SiC 1.2KV 60A 3-Pin(3+Tab) TO-247
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Bestand
30
16,8379 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | SiC | N | Single | Enhancement | 1 | 1200 | 25 | 60 | 40@18V | 82@18V | 249000 | 2925@800V | 3 | TO-247 | TO | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK5A90E,S4X(S
Trans MOSFET N-CH Si 900V 4.5A 3-Pin(3+Tab) TO-220SIS
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Bestand
39
Von 0,6317 € bis 0,8588 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 900 | ±30 | 4.5 | 3100@10V | 20@10V | 40000 | 950@25V | 3 | TO-220SIS | TO | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPW1500CNH,L1Q(M Trans MOSFET N-CH Si 150V 50A 8-Pin DSOP Advance T/R |
Bestand
5.000
Von 1,1439 € bis 2,6691 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 150 | ±20 | 4 | 50 | 15.4@10V | 22@10V | 22 | 2500 | 1700@75V | Tape and Reel | 8 | DSOP Advance | SO | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK14N65W,S1F
Trans MOSFET N-CH Si 650V 13.7A 3-Pin(3+Tab) TO-247 Tube
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Bestand
30
1,1006 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 650 | ±30 | 3.5 | 13.7 | 250@10V | 35@10V | 35 | 130000 | 1300@300V | Tube | 3 | TO-247 | TO | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPH5900CNH,L1Q(M
Trans MOSFET N-CH Si 150V 18A 8-Pin SOP Advance T/R
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Bestand
7.784
Von 0,3518 € bis 0,591 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 150 | ±20 | 4 | 18 | 59@10V | 7@10V | 7 | 42000 | 460@75V | Tape and Reel | 8 | SOP Advance | SO | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPCP8505(TE85L,F)
Trans GP BJT NPN 50V 3A 3000mW 8-Pin PS T/R
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Bestand
1.765
Von 0,083 € bis 0,0919 €
pro Stück
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Toshiba | GP BJT | NPN | Bipolar Power | Si | Single Hex Collector | 50 | 1 | 100 | 7 | 1.1@20mA@1A | 3 | 200 to 300|300 to 500 | 200@1A@2V|400@0.3A@2V | 3000 | 0.14@20mA@1A | Tape and Reel | 8 | PS | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CMH01(T2L,TEMQ)
Diode Switching 200V 3A 2-Pin M-FLAT T/R
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Bestand
854
Von 0,0945 € bis 0,2487 €
pro Stück
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Toshiba | Gleichrichter | Switching Diode | Single | 200 | 3 | 40 | 0.98 | 10 | 35 | Tape and Reel | 2 | M-FLAT | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN2705JE(TE85L,F)
Trans Digital BJT PNP 50V 0.1A 200mW 5-Pin ESV T/R
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Bestand
3.215
Von 0,0757 € bis 0,1976 €
pro Stück
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Toshiba | Digital-BJT | PNP | Dual Common Emitter | 50 | 2.2 | 0.0468 | 0.1 | 80@10mA@5V | 200 | 0.3@0.25mA@5mA | Tape and Reel | 5 | ESV | SOT | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TRS8E65F,S1Q(S
Diode Schottky SiC 650V 8A 2-Pin(2+Tab) TO-220-L Tube
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Bestand
49
Von 17,5052 € bis 23,138 €
pro Stück
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Toshiba | Gleichrichter | Schottky Diode | SiC | Single | 650 | 8 | 69 | 1.6 | 40 | Tube | 2 | TO-220-L | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPN4R203NC,L1Q(M
Trans MOSFET N-CH Si 30V 53A 8-Pin TSON EP Advance T/R
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Bestand
5.000
Von 0,2002 € bis 0,5546 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 30 | ±20 | 53 | 4.2@10V | 24@10V | 24 | 22000 | 1370@15V | U-MOS VIII | Tape and Reel | 8 | TSON EP Advance | SON | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
HN4C06J-GR(TE85L,F
Trans GP BJT NPN 120V 0.1A 300mW 5-Pin SMV T/R
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Bestand
5
0,4307 €
pro Stück
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Toshiba | GP BJT | NPN | Bipolar Small Signal | Si | Dual Common Emitter | 120 | 2 | 120 | 5 | 0.1 | 200 to 300 | 200@2mA@6V | 300 | 0.3@1mA@10mA | Tape and Reel | 5 | SMV | SOT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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HN4C51J(TE85L,F)
Trans GP BJT NPN 120V 0.1A 300mW 5-Pin SMV T/R
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Bestand
2.139
Von 0,1456 € bis 0,3718 €
pro Stück
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Toshiba | GP BJT | NPN | Bipolar Small Signal | Si | Dual Common Base | 120 | 2 | 120 | 5 | 0.1 | 200 to 300 | 200@2mA@6V | 300 | 0.3@1mA@10mA | Tape and Reel | 5 | SMV | SOT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6N813R,LF
Trans MOSFET N-CH Si 100V 3.5A 6-Pin TSOP-F T/R Automotive AEC-Q101
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Bestand
1.293
0,1195 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Dual | Enhancement | 2 | 100 | ±20 | 3.5 | 112@10V | 3.6@4.5V | 2500 | 242@15V | Tape and Reel | 6 | TSOP-F | SO | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC5976(TE85L,F)
Trans GP BJT NPN 30V 3A 625mW 3-Pin TSM T/R
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Bestand
1.367
Von 0,0703 € bis 0,0893 €
pro Stück
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Toshiba | GP BJT | NPN | Bipolar Power | Si | Single | 30 | 1 | 50 | 6 | 1.1@33mA@1A | 3 | 120 to 200|200 to 300 | 250@0.3A@2V|120@1A@2V | 625 | 0.14@33mA@1A | Tape and Reel | 3 | TSM | SOT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK170V65Z,LQ(S
Trans MOSFET N-CH 650V 18A 5-Pin DFN EP
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Bestand
2.400
Von 1,2306 € bis 2,8771 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | N | Single Triple Source | Enhancement | 1 | 650 | ±30 | 18 | 170@10V | 29@10V | 150000 | 1635@300V | 5 | DFN EP | DFN | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TRS12E65C,S1AQ(S
Diode Schottky SiC 650V 12A 2-Pin(2+Tab) TO-220-L Tube
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Bestand
50
Von 6,7161 € bis 10,2258 €
pro Stück
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Toshiba | Gleichrichter | Schottky Diode | SiC | Single | 650 | 12 | 1.7 | 90 | Tube | 2 | TO-220-L | No | No | No | No | EAR99 |