Toshiba Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Material | Frequency Band | Channel Type | Repetitive Peak Off-State Current - (mA) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Number of Elements per Chip | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (mA) | Maximum Collector-Base Voltage - (V) | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Continuous DC Collector Current - (A) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Peak On-State Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Rated Average On-State Current - (A) | Maximum Junction Ambient Thermal Resistance | RMS On-State Current - (A) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Maximum Output Power - (W) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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TK14N65W,S1F
Trans MOSFET N-CH Si 650V 13.7A 3-Pin(3+Tab) TO-247 Tube
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Bestand
30
1,0971 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 650 | ±30 | 3.5 | 13.7 | 250@10V | 35@10V | 35 | 130000 | 1300@300V | Tube | 3 | TO-247 | TO | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPWR8004PL,L1Q(M
Trans MOSFET N-CH Si 40V 340A 8-Pin DSOP Advance T/R
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Bestand
4.808
Von 2,4706 € bis 2,5483 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 40 | ±20 | 2.4 | 340 | 0.8@10V | 49@4.5V|103@10V | 103 | 3000 | 7370@20V | Tape and Reel | 8 | DSOP Advance | SO | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK090A65Z,S4X(S
Trans MOSFET N-CH Si 650V 30A 3-Pin(3+Tab) TO-220SIS
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Bestand
4
3,0839 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 650 | ±30 | 30 | 90@10V | 47@10V | 45000 | 2780@300V | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN2906,LF(CT
Silicon PNP Epitaxial Type
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Bestand
3.000
Von 0,0343 € bis 0,0942 €
pro Stück
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Toshiba | Digital-BJT | Tape and Reel | 6 | US | No | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA1587-GR,LF(T
Trans GP BJT PNP 120V 0.1A 100mW 3-Pin USM T/R
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Bestand
9.412
Von 0,049 € bis 0,065 €
pro Stück
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Toshiba | GP BJT | PNP | Bipolar Small Signal | Si | Single | 120 | 1 | 120 | 5 | 0.1 | 200 to 300 | 200@2mA@6V | 100 | 0.3@1mA@10mA | 10 | Tape and Reel | 3 | USM | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC2713-GR,LXGF(T
Silicon NPN Epitaxial Type Automotive AEC-Q101
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Bestand
2.285
Von 0,0545 € bis 0,1287 €
pro Stück
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Toshiba | GP BJT | Tape and Reel | 3 | S-Mini | SOT | No | No | Yes | AEC-Q101 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK1K9A60F,S4X
Trans MOSFET N-CH Si 600V 3.7A 3-Pin(3+Tab) TO-220SIS Tube
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Bestand
19
0,2581 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 3.7 | 1900@10V | 14@10V | 14 | 30000 | 490@300V | Tube | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TJ15S06M3L(T6L1,NQ
Trans MOSFET P-CH Si 60V 15A 3-Pin(2+Tab) DPAK+ T/R Automotive AEC-Q101
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Bestand
1.609
Von 0,6807 € bis 1,529 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | P | Single | Enhancement | 1 | 60 | 10 | 3 | 15 | 50@10V | 36@10V | 36 | 41000 | 1770@10V | Tape and Reel | 3 | DPAK+ | TO | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SK3564,S5Q(J
Trans MOSFET N-CH Si 900V 3A 3-Pin(3+Tab) TO-220NIS
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Bestand
1
1,0625 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 900 | ±30 | 3 | 4300@10V | 17@10V | 40000 | 700@25V | 3 | TO-220NIS | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK2145-BL(TE85L,F)
Trans JFET N-CH 14mA Si 5-Pin SMV T/R
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Bestand
886
Von 0,2825 € bis 0,8016 €
pro Stück
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Toshiba | JFETs | Si | N | Dual Common Source | -50 | 14 | 13 | 300 | 5(Typ) | Tape and Reel | 5 | SMV | SOT | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TW027N65C,S1F(S
Trans MOSFET N-CH SiC 650V 58A 3-Pin(3+Tab) TO-247
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Bestand
20
Von 19,4364 € bis 31,962 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | SiC | N | Single | Enhancement | 1 | 650 | 25 | 58 | 37@18V | 65@18V | 156000 | 2288@400V | 3 | TO-247 | TO | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN1705JE(TE85L,F)
Trans Digital BJT NPN 50V 0.1A 100mW 5-Pin ESV T/R
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Bestand
2.760
Von 0,0776 € bis 0,203 €
pro Stück
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Toshiba | Digital-BJT | NPN | Dual Common Emitter | 50 | 2.2 | 0.0468 | 0.1 | 80@10mA@5V | 100 | 0.3@0.25mA@5mA | Tape and Reel | 5 | ESV | SOT | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK090N65Z,S1F(S
Trans MOSFET N-CH Si 650V 30A 3-Pin(3+Tab) TO-247
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Bestand
120
2,5439 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 650 | ±30 | 30 | 90@10V | 47@10V | 230000 | 2780@300V | 3 | TO-247 | TO | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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GT15J341,S4X(S
Trans IGBT Chip N-CH 600V 15A 30W 3-Pin(3+Tab) TO-220SIS Magazine
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Bestand
50
Von 1,0884 € bis 2,1078 €
pro Stück
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Toshiba | IGBT-Chip | N | Single | ±25 | 600 | 15 | 30 | Magazine | 3 | TO-220SIS | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6J412TU,LF(T
Trans MOSFET P-CH Si 20V 4A 6-Pin UF T/R
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Bestand
2.475
Von 0,133 € bis 0,2211 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | P | Single Quad Drain | Enhancement | 1 | 20 | ±8 | 1 | 4 | 42.7@4.5V | 12.8@4.5V | 1000 | 840@10V | Tape and Reel | 6 | UF | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CES521,L3F(T Diode Small Signal Schottky Si 0.2A 2-Pin ESC T/R |
Bestand
452
Von 0,0323 € bis 0,0632 €
pro Stück
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Toshiba | Gleichrichter | Small Signal Schottky Diode | Si | Single | 0.2 | 1 | 0.5 | 30 | 26(Typ) | 2 | ESC | SOD | Unknown | Unknown | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC6135,LF(T
Trans GP BJT NPN 50V 1A 800mW 3-Pin UFM T/R
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Bestand
367
Von 0,1214 € bis 0,1348 €
pro Stück
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Toshiba | GP BJT | NPN | Bipolar Small Signal | Si | Single | 50 | 1 | 100 | 7 | 1.1@6mA@300mA | 1 | 200 to 300|300 to 500 | 400@0.1A@2V|200@0.3A@2V | 800 | 0.12@6mA@300mA | Tape and Reel | 3 | UFM | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6N813R,LF
Trans MOSFET N-CH Si 100V 3.5A 6-Pin TSOP-F T/R Automotive AEC-Q101
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Bestand
1.293
0,1191 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Dual | Enhancement | 2 | 100 | ±20 | 3.5 | 112@10V | 3.6@4.5V | 2500 | 242@15V | Tape and Reel | 6 | TSOP-F | SO | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SC3326-B,LF(T
Trans GP BJT NPN 20V 0.3A 150mW 3-Pin S-Mini T/R Automotive AEC-Q101
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Bestand
2.591
Von 0,0606 € bis 0,1356 €
pro Stück
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Toshiba | GP BJT | NPN | Bipolar Small Signal | Si | Single | 20 | 1 | 50 | 25 | 0.3 | 300 to 500 | 350@4mA@2V | 150 | 0.1@3mA@30mA | 4.8 | 160(Typ) | Tape and Reel | 3 | S-Mini | SOT | No | Unknown | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SSM3J132TU,LF(T
Trans MOSFET P-CH Si 12V 5.4A 3-Pin UFM T/R
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Bestand
698
0,1471 €
pro Stück
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Toshiba | MOSFETs | Small Signal | Si | P | Single | Enhancement | 1 | 12 | ±6 | 5.4 | 17@4.5V | 33@4.5V | 500 | 2700@10V | Tape and Reel | 3 | UFM | No | Yes | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CUS10F30,H3F(T
Diode Small Signal Schottky Si 1A 2-Pin USC T/R
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Bestand
1.829
0,4224 €
pro Stück
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Toshiba | Gleichrichter | Small Signal Schottky Diode | Si | Single | 1 | 5 | 0.5 | 50 | 170(Typ) | Tape and Reel | 2 | USC | SOD | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3K37MFV,L3F
Trans MOSFET N-CH Si 20V 0.25A 3-Pin VESM T/R
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Bestand
19.392
Von 0,0143 € bis 0,0172 €
pro Stück
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Toshiba | MOSFETs | Small Signal | Si | N | Single | Enhancement | 1 | 20 | ±10 | 0.25 | 2200@4.5V | 150 | 12@10V | Tape and Reel | 3 | VESM | SOT | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1SS378(TE85L,F)
Diode Small Signal Schottky 15V 0.2A 3-Pin USM T/R
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Bestand
2.025
Von 0,0573 € bis 0,1183 €
pro Stück
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Toshiba | Gleichrichter | Small Signal Schottky Diode | Dual Common Cathode | 15 | 0.2 | 1 | 0.5@0.1A | 20 | 100 | Tape and Reel | 3 | USM | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK9P65W,RQ
Trans MOSFET N-CH Si 650V 9.3A 3-Pin(2+Tab) DPAK T/R
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Bestand
1.864
0,558 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 650 | ±30 | 9.3 | 560@10V | 20@10V | 20 | 80000 | 700@300V | Tape and Reel | 3 | DPAK | TO | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SA1162-GR,LF(T
Trans GP BJT PNP 50V 0.15A 150mW Automotive AEC-Q101 3-Pin S-Mini T/R
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Bestand
1.193
Von 0,0325 € bis 0,0828 €
pro Stück
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Toshiba | GP BJT | PNP | Bipolar Small Signal | Si | Single | 50 | 1 | 50 | 5 | 0.15 | 150 | 0.3@10mA@100mA | 4 | 10 | Tape and Reel | 3 | S-Mini | SOT | No | Unknown | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No |