Toshiba Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Maximum Rate of Rise of Off-State Voltage - (V/us) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Material | Frequency Band | Channel Type | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Current - (mA) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Maximum Reverse Current - (uA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Number of Elements per Chip | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Peak Reverse Current - (uA) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation - (mW) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | RMS On-State Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Repetitive Peak Off-State Current - (mA) | Maximum Junction Case Thermal Resistance | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Frequency - (MHz) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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TK10P50W,RQ
Trans MOSFET N-CH Si 500V 9.7A 3-Pin(2+Tab) DPAK T/R
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 500 | ±30 | 80000 | 9.7 | 430@10V | 20@10V | 700@300V | Tape and Reel | 3 | DPAK | TO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6P16FE(TE85L,F)
Trans MOSFET P-CH Si 20V 0.1A 6-Pin ES T/R
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Toshiba | MOSFETs | Small Signal | Si | P | Dual | Enhancement | 2 | 20 | ±10 | 150 | 0.1 | 8000@4V | 11@3V | Tape and Reel | 6 | ES | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK4002(Q)
Trans MOSFET N-CH Si 600V 2A 3-Pin(3+Tab) PW-Mold2 Bag
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 20000 | 2 | 5000@10V | 9@10V | 9 | 380@10V | Bag | 3 | PW-Mold2 | TO | No | Unknown | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SS193(TE85L,F)
Diode Switching Si 85V 0.1A 3-Pin S-Mini T/R Automotive AEC-Q101
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Toshiba | Gleichrichter | Switching Diode | Si | Single | 85 | 0.1 | 2 | 1.2 | 0.5 | 150 | 3 | 4 | Tape and Reel | 3 | S-Mini | SOT | No | Unknown | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SC2714-Y(TE85L,F)
Trans RF BJT NPN 30V 0.02A 100mW 3-Pin S-Mini T/R
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Toshiba | HF-BJT | NPN | Si | Single | 30 | 40 | 1 | 4 | 0.02 | 6V/1mA | 100 | 50 to 120 | 100@1mA@6V | 23 | 550(Typ) | 5 | Tape and Reel | 3 | S-Mini | SOT | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK2057(F) Field Effect Transistor |
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Toshiba | MOSFETs | 150000 | 3 | TO-3PN | TO | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK3561,S5Q(J
Trans MOSFET N-CH Si 500V 8A 3-Pin(3+Tab) TO-220NIS
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 500 | ±30 | 40000 | 8 | 850@10V | 28@10V | 28 | 1050@25V | 3 | TO-220NIS | TO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN1306,LF
Trans Digital BJT NPN 50V 0.1A 100mW 3-Pin USM T/R Automotive AEC-Q101
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Von 0,0174 € bis 0,019 €
pro Stück
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Toshiba | Digital-BJT | NPN | Single | 50 | 0.1 | 4.7 | 0.1 | 100 | 80@10mA@5V | 0.3@0.25mA@5mA | Tape and Reel | 3 | USM | No | Unknown | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK160F10N1L,LXGQ(O
Trans MOSFET N-CH Si 100V 160A 3-Pin(2+Tab) TO-220SM(W) Automotive AEC-Q101
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 100 | ±20 | 375000 | 160 | 2.4@10V | 122@10V | 10100@10V | 3 | TO-220SM(W) | TO | Yes | AEC-Q101 | Yes | Unknown | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SSM3K7002CFU,LF
Trans MOSFET N-CH Si 60V 0.17A 3-Pin USM T/R
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Von 0,0122 € bis 0,0133 €
pro Stück
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Toshiba | MOSFETs | Small Signal | Si | N | Single | Enhancement | 1 | 60 | ±20 | 2.1 | 700 | 0.17 | 3900@10V | 0.27@4.5V | 11@10V | Tape and Reel | 3 | USM | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK20S04K3L(T6L1,NQ
Trans MOSFET N-CH Si 40V 20A 3-Pin(2+Tab) DPAK+ T/R Automotive AEC-Q101
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 40 | ±20 | 38000 | 20 | 14@10V | 18@10V | 18 | 820@10V | Tape and Reel | 3 | DPAK+ | TO | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK790
Trans MOSFET N-CH Si 500V 15A 3-Pin(3+Tab) TO-3P
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 500 | ±20 | 150000 | 15 | 400@10V | 87@10V | 87 | 2300@10V | 3 | TO-3P | TO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK366-BL(F) Trans JFET N-CH 12mA Si 3-Pin |
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Toshiba | JFETs | Si | N | Single | -40 | 200 | 12 | 50000(Typ) | 3 | No | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK17E80W,S1X
Trans MOSFET N-CH Si 800V 17A 3-Pin(3+Tab) TO-220 Tube
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Von 2,3194 € bis 2,5075 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 800 | ±20 | 4 | 180000 | 17 | 290@10V | 32@10V | 32 | 2050@300V | Tube | 3 | TO-220 | TO | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SV305TH3FT
Diode VAR Cap Single 10V 17.3pF 2-Pin ESC T/R
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Toshiba | Varaktors | VCO | VHF | Single | 10 | 0.003 | 2.8 | 1V/4V | 17.3@1V | Tape and Reel | 2 | ESC | SOD | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPC8128(TE12L,Q)
Trans MOSFET P-CH Si 30V 16A 8-Pin SOP T/R
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Toshiba | MOSFETs | Power MOSFET | Si | P | Single Quad Drain Triple Source | Enhancement | 1 | 30 | 30 | 2 | 1900 | 16 | 5@10V | 115@10V | 115 | 4800@10V | Tape and Reel | 8 | SOP | SO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1NU41(TPA2,Q)
Diode Switching 1KV 1A 2-Pin DO-15 T/R
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Toshiba | Gleichrichter | Switching Diode | Single | 1000 | 1 | 11 | 3.3 | 100 | 100 | Tape and Reel | 2 | DO-15 | DO | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK5A90E,S4X
Trans MOSFET N-CH Si 900V 4.5A 3-Pin(3+Tab) TO-220SIS Tube
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Von 0,59 € bis 0,6394 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 900 | ±30 | 4 | 40000 | 4.5 | 3100@10V | 20@10V | 20 | 950@25V | 2500@10V | Tube | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TDTA114Y,LM Silicon PNP Epitaxial Digital Transistor |
Von 0,016 € bis 0,0175 €
pro Stück
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Toshiba | Digital-BJT | Tape and Reel | 3 | SOT-23 | SOT | No | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK9A20DA,S5X(J
Trans MOSFET N-CH Si 200V 8.5A 3-Pin(3+Tab) TO-220SIS Tube
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 200 | ±20 | 3.5 | 30000 | 8.5 | 400@10V | 14@10V | 14 | 550@100V | Tube | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN1417,LF
Trans Digital BJT NPN 50V 0.1A 200mW 3-Pin S-Mini T/R Automotive AEC-Q101
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Von 0,016 € bis 0,0175 €
pro Stück
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Toshiba | Digital-BJT | NPN | Single | 50 | 0.1 | 10 | 2.13 | 200 | 30@10mA@5V | 0.3@0.25mA@5mA | Tape and Reel | 3 | S-Mini | SOT | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK14C65W,S1Q
Trans MOSFET N-CH Si 650V 13.7A 3-Pin(3+Tab) I2PAK Tube
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 650 | ±30 | 130000 | 13.7 | 250@10V | 35@10V | 35 | 1300@300V | Tube | 3 | I2PAK | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TJ60S06M3L,LXHQ(O Trans MOSFET P-CH Si 60V 60A 3-Pin(2+Tab) DPAK+ T/R Automotive AEC-Q101 |
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Toshiba | MOSFETs | Power MOSFET | Si | P | Single | Enhancement | 1 | 60 | 10 | 100000 | 60 | 11.2@10V | 156@10V | 7760@10V | 3 | DPAK+ | TO | No | Yes | AEC-Q101 | Yes | Yes | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1SS412(TE85L,F)
Diode Switching 85V 0.1A 3-Pin USM T/R
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Toshiba | Gleichrichter | Switching Diode | Dual Series | 85 | 0.1 | 1 | 1.3 | 0.01 | 100 | Tape and Reel | 3 | USM | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1SV314(TPH3,F)
Diode VAR Cap Single 10V 7.3pF 2-Pin ESC T/R
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Toshiba | Varaktors | Tuner|VCO | UHF | Single | 10 | 0.003 | 2.4 | 0.5V/2.5V | 7.3@0.5V | Tape and Reel | 2 | ESC | SOD | No | No | No | No | No | EAR99 | No |