Toshiba Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Maximum Rate of Rise of Off-State Voltage - (V/us) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Material | Frequency Band | Channel Type | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Current - (mA) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Maximum Reverse Current - (uA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Number of Elements per Chip | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Peak Reverse Current - (uA) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation - (mW) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | RMS On-State Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Repetitive Peak Off-State Current - (mA) | Maximum Junction Case Thermal Resistance | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Frequency - (MHz) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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2SC5086-O(TE85L,F)
Trans RF BJT NPN 12V 0.08A 100mW 3-Pin SSM T/R
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Toshiba | HF-BJT | NPN | Si | Single | 12 | 20 | 1 | 3 | 0.08 | 10V/20mA | 100 | 50 to 120 | 80@20mA@10V | 1 | 16.5 | 7000(Typ) | 2 | Tape and Reel | 3 | SSM | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3J117TU,LF
Trans MOSFET P-CH Si 30V 2A 3-Pin UFM T/R Automotive AEC-Q101
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Von 0,0815 € bis 0,0889 €
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Toshiba | MOSFETs | Small Signal | Si | P | Single | Enhancement | 1 | 30 | ±20 | 2.6 | 800 | 2 | 117@10V | 280@15V | Tape and Reel | 3 | UFM | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC5084-O(TE85L,F)
Trans RF BJT NPN 12V 0.08A 3-Pin S-Mini T/R
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Toshiba | HF-BJT | NPN | Si | Single | 12 | 20 | 1 | 3 | 0.08 | 10V/20mA | 150 | 50 to 120 | 80@20mA@10V | 1 | 16.5 | 7000(Typ) | 2 | Tape and Reel | 3 | S-Mini | SOT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK49N65W,S1F(S
Trans MOSFET N-CH Si 650V 49.2A 3-Pin(3+Tab) TO-247 Tube
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 650 | ±30 | 3.5 | 400000 | 49.2 | 55@10V | 160@10V | 160 | 6500@300V | Tube | 3 | TO-247 | TO | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK14A65W5,S5X
Trans MOSFET N-CH Si 650V 13.7A 3-Pin(3+Tab) TO-220SIS Tube
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Von 1,1745 € bis 1,255 €
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 650 | ±30 | 4.5 | 40000 | 13.7 | 300@10V | 205@10V | 205 | 6500@300V | Tube | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC2982-C(TE12L,CF
Trans GP BJT NPN 10V 2A 1000mW 4-Pin(3+Tab) PW-Mini T/R
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Toshiba | GP BJT | NPN | Bipolar Small Signal | Si | Single Dual Collector | 10 | 30 | 1 | 6 | 2 | 1000 | 300 to 500 | 300@0.5A@1V | 0.5@50mA@2A | Tape and Reel | 4 | PW-Mini | SOT | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK20J60U(F)
Trans MOSFET N-CH Si 600V 20A 3-Pin(3+Tab) TO-3PN
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 190000 | 20 | 190@10V | 27@10V | 27 | 1470@10V | 3 | TO-3PN | TO | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SS413(TPL3)
Diode Small Signal Schottky 25V 0.05A 2-Pin fSC T/R
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Toshiba | Gleichrichter | Small Signal Schottky Diode | Single | 25 | 0.05 | 1 | 0.55 | 0.5 | 100 | Tape and Reel | 2 | fSC | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK62Z60X,S1F
Trans MOSFET N-CH Si 600V 61.8A 4-Pin(4+Tab) TO-247 Tube
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Von 8,9462 € bis 9,4156 €
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Dual Source | Enhancement | 1 | 600 | ±30 | 3.5 | 400000 | 61.8 | 40@10V | 135@10V | 135 | 6500@300V | Tube | 4 | TO-247 | TO | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TP89R103NL,LQ
Trans MOSFET N-CH Si 30V 15A 8-Pin SOP T/R
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Von 0,2833 € bis 0,3069 €
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 30 | ±20 | 1900 | 15 | 9.1@10V | 4.4@4.5V|9.8@10V | 9.8 | 820@15V | Tape and Reel | 8 | SOP | SO | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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RN2402,LF(B
Trans Digital BJT PNP 50V 0.1A 200mW 3-Pin S-Mini T/R
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Toshiba | Digital-BJT | PNP | Single | 50 | 0.1 | 10 | 1 | 200 | 50 to 120 | 50@10mA@5V | 0.3@0.25mA@5mA | Tape and Reel | 3 | S-Mini | SOT | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TD62064AFG(5,S)
Trans Darlington NPN 50V 1.5A 1400mW 18-Pin(16+2Tab) HSOP
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Toshiba | Darlington BJT | NPN | Quad | 50 | 4 | 1.5 | 1400 | 800(Typ)@1A@2V|1500(Typ)@0.25A@2V | 1.25@935uA@0.75A|1.6@2mA@1.25A | 0.13um | 18 | HSOP | SO | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6K407TU,LF(B Field-Effect Transistor Silicon N-Channel MOS Type |
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Toshiba | MOSFETs | 6 | UF | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPC6111(TE85L,F,M)
Trans MOSFET P-CH Si 20V 5.5A 6-Pin VS T/R
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Toshiba | MOSFETs | Power MOSFET | Si | P | Single Quad Drain | Enhancement | 1 | 20 | ±8 | 2200 | 5.5 | 40@4.5V | 10@5V | 700@10V | Tape and Reel | 6 | VS | SOT | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK100A10N1,S4X(S
Trans MOSFET N-CH Si 100V 207A 3-Pin(3+Tab) TO-220SIS Magazine
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 100 | ±20 | 4 | 45000 | 207 | 3.8@10V | 140@10V | 140 | 8800@50V | Magazine | 3 | TO-220SIS | TO | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK25S06N1L,LXHQ(O Trans MOSFET N-CH Si 60V 25A 3-Pin(2+Tab) DPAK+ T/R |
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 60 | ±20 | 57000 | 25 | 18.5@10V | 15@10V | 855@10V | 3 | DPAK+ | TO | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK35E08N1,S1X
Trans MOSFET N-CH Si 80V 55A 3-Pin(3+Tab) TO-220 Magazine
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Von 0,4668 € bis 0,5058 €
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 80 | ±20 | 4 | 72000 | 55 | 12.2@10V | 25@10V | 25 | 1700@40V | Magazine | 3 | TO-220 | TO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SV280TPH3F
Varactor Diode Single 15V 3.8pF 2-Pin ESC T/R
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Toshiba | Varaktors | VCO | UHF | Single | 15 | 0.003 | 2 | 2V/10V | 3.8@2V | Tape and Reel | 2 | ESC | SOD | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CEZ5V6,L3F
Zener Diode Single 5.6V 6% 30Ohm 300mW 2-Pin ESC T/R
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0,0234 €
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Toshiba | Zener | Voltage Regulator | Single | 5.6 | 6% | 5 | 1 | 30 | 300 | 300 | 125(Typ) | Tape and Reel | 2 | ESC | SOD | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6K211FE,LF
Trans MOSFET N-CH Si 20V 3.2A 6-Pin ES T/R
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Toshiba | MOSFETs | Small Signal | Si | N | Single Quad Drain | Enhancement | 1 | 20 | ±10 | 1 | 500 | 3.2 | 47@4.5V | 10.8@4.5V | 510@10V | Tape and Reel | 6 | ES | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLP611J(N,F) Photo Thyristor |
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Toshiba | Thyristors | 8 | PDIP | DIP | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
02DZ9.1-X(TPH3,F)
Zener Diode Single 8.75V 2.5% 18Ohm 200mW 2-Pin USC T/R
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Toshiba | Zener | Voltage Regulator | Single | 8.75 | 2.5% | 5 | 0.5 | 18 | 200 | 200 | Tape and Reel | 2 | USC | SOD | No | Unknown | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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5DL2CZ47A(F)
Diode Switching 200V 5A 3-Pin(3+Tab) TO-220NIS
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Toshiba | Gleichrichter | Switching Diode | Dual Common Cathode | 200 | 5 | 27.5 | 0.98@2.5A | 10 | 35 | 3 | TO-220NIS | TO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN4602(TE85L,F)
Trans Digital BJT NPN/PNP 50V 0.1A 300mW 6-Pin SM T/R
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Toshiba | Digital-BJT | NPN|PNP | Dual | 50 | 0.1 | 10 | 1 | 300 | 50@10mA@5V | 0.3@0.25mA@5mA | Tape and Reel | 6 | SM | SOT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CMH07(TE12L,Q)
Diode Switching 200V 2A 2-Pin M-FLAT T/R
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Toshiba | Gleichrichter | Switching Diode | Single | 200 | 2@Ta=35C | 40 | 0.98 | 10 | 35 | Tape and Reel | 2 | M-FLAT | No | No | No | No | No | EAR99 |