Toshiba Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Maximum Rate of Rise of Off-State Voltage - (V/us) | Category | Surge Current Rating - (A) | Material | Configuration | Channel Type | Maximum Reverse Voltage - (V) | Maximum Rate of Rise of On-State Current - (A/us) | Channel Mode | Typical Zener Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Repetitive Peak Forward Blocking Voltage - (V) | Number of Elements per Chip | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Maximum Reverse Leakage Current - (uA) | Maximum Gate Peak Inverse Voltage - (V) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Minimum DC Current Gain | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Typical Gate Charge @ Vgs - (nC) | RMS On-State Current - (A) | Repetitive Peak Off-State Current - (mA) | Maximum Junction Ambient Thermal Resistance | Frequency Band | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Transition Frequency - (MHz) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Input Capacitance @ Vds - (pF) | Maximum Output Power - (W) | Typical Output Capacitance - (pF) | Maximum Power Dissipation - (mW) | Maximum Frequency - (MHz) | Maximum Drain-Source Resistance - (Ohm) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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2SC3326A(TE85L,F)
Trans GP BJT NPN 20V 0.3A 150mW 3-Pin S-Mini T/R Automotive AEC-Q101
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Toshiba | GP BJT | NPN | Bipolar Small Signal | Si | Single | 20 | 50 | 1 | 25 | 0.3 | 350@4mA@2V | 300 to 500 | 0.1@3mA@30mA | 4.8 | 150 | 160(Typ) | Tape and Reel | 3 | S-Mini | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SC3325-Y,LF
Trans GP BJT NPN 50V 0.5A 200mW 3-Pin S-Mini T/R Automotive AEC-Q101
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Von 0,0326 € bis 0,0355 €
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Toshiba | GP BJT | NPN | Bipolar Small Signal | Si | Single | 50 | 50 | 1 | 5 | 0.5 | 120@100mA@1V|40@400mA@6V | 30 to 50|50 to 120|120 to 200 | 0.25@10mA@100mA | 200 | Tape and Reel | 3 | S-Mini | SOT | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAS516,L3F
Diode Switching Si 100V 0.25A 2-Pin ESC T/R
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Von 0,0811 € bis 0,0852 €
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Toshiba | Gleichrichter | Switching Diode | Si | Single | 100 | 0.5 | 1 | 1.25@0.15A | 0.2@80V | 0.35(Typ) | 3 | 150 | Tape and Reel | 2 | ESC | SOD | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA2121-O(Q)
Trans GP BJT PNP 200V 15A 220000mW 3-Pin(3+Tab) TO-3PL Tray
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Toshiba | GP BJT | PNP | Bipolar Power | Si | Single | 200 | 200 | 1 | 5 | 15 | 80@1A@5V | 50 to 120 | 3@1A@10A | 220000 | Tray | 3 | TO-3PL | TO | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN1102(TE85L,F)
Trans Digital BJT NPN 50V 0.1A 100mW 3-Pin SSM T/R
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Toshiba | Digital-BJT | NPN | Single | 50 | 0.1 | 10 | 1 | 50@10mA@5V | 0.3@0.25mA@5mA | 100 | Tape and Reel | 3 | SSM | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN1305(TE85L,F)
Trans Digital BJT NPN 50V 0.1A 100mW 3-Pin USM T/R
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Toshiba | Digital-BJT | NPN | Single | 50 | 0.1 | 2.2 | 0.0468 | 80@10mA@5V | 0.3@0.25mA@5mA | 100 | Tape and Reel | 3 | USM | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SSM3K36FS,LF(B
Trans MOSFET N-CH Si 20V 0.5A 3-Pin SSM
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Toshiba | MOSFETs | Small Signal | Si | Single | N | Enhancement | 1 | 20 | ±10 | 0.5 | 1.23@4V | 46@10V | 150 | 630@5V | 3 | SSM | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TTA006B,Q
Trans GP BJT PNP 230V 1A 10000mW 3-Pin TO-126N Sack
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Von 0,2342 € bis 0,2538 €
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Toshiba | GP BJT | PNP | Bipolar Power | Si | Single | 230 | 230 | 1 | 5 | 1 | 100@0.1A@5V | 50 to 120 | 1.5@50mA@0.5A | 30 | 10000 | Sack | 3 | TO-126N | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TTC015B,Q
Trans GP BJT NPN 80V 2A 1500mW 3-Pin TO-126N Sack
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Von 0,2115 € bis 0,2292 €
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Toshiba | GP BJT | NPN | Bipolar Power | Si | Single | 80 | 160 | 1 | 7 | 1.5@100mA@1A | 2 | 60@1A@2V|100@0.5A@2V|80@1mA@2V | 50 to 120 | 0.5@100mA@1A|0.3@5mA@0.5A | 14 | 1500 | Sack | 3 | TO-126N | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TTC011B,Q
Trans GP BJT NPN 230V 1A 1500mW 3-Pin TO-126N Sack
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Von 0,2378 € bis 0,2577 €
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Toshiba | GP BJT | NPN | Bipolar Power | Si | Single | 230 | 230 | 1 | 5 | 1 | 100@0.1A@5V | 50 to 120 | 1.5@50mA@0.5A | 20 | 1500 | Sack | 3 | TO-126N | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TTA006B,Q(S
Trans GP BJT PNP 230V 1A 10000mW 3-Pin TO-126N
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Toshiba | GP BJT | PNP | Bipolar Power | Si | Single | 230 | 230 | 1 | 5 | 1 | 100@0.1A@5V | 50 to 120 | 1.5@50mA@0.5A | 10000 | 3 | TO-126N | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TTC011B,Q(S
Trans GP BJT NPN 230V 1A 1500mW 3-Pin TO-126N
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Toshiba | GP BJT | NPN | Bipolar Power | Si | Single | 230 | 230 | 1 | 5 | 1 | 100@0.1A@5V | 50 to 120 | 1.5@50mA@0.5A | 1500 | 3 | TO-126N | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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RN1306(TE85L,F)
Trans Digital BJT NPN 50V 0.1A 100mW 3-Pin USM T/R
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Toshiba | Digital-BJT | NPN | Single | 50 | 0.1 | 4.7 | 0.1 | 80@10mA@5V | 0.3@0.25mA@5mA | 100 | Tape and Reel | 3 | USM | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TBC847B,LM
Trans GP BJT NPN 50V 0.15A 320mW 3-Pin SOT-23
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Von 0,0114 € bis 0,0165 €
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Toshiba | GP BJT | NPN | Bipolar Small Signal | Si | Single | 50 | 60 | 1 | 6 | 0.7(Typ)@0.5mA@10mA|0.9(Typ)@5mA@100mA | 0.15 | 200@2mA@5V | 200 to 300 | 11 | 0.2@0.5mA@10mA|0.4@5mA@100mA | 3.5(Max) | 320 | 10 | 3 | SOT-23 | SOT | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TTA004B,Q
Trans GP BJT PNP 160V 1.5A 1500mW 3-Pin TO-126N
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Von 0,1482 € bis 0,1606 €
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Toshiba | GP BJT | PNP | Bipolar Power | Si | Single | 160 | 160 | 1 | 6 | 1.3@50mA@0.5A | 1.5 | 80@1mA@5V|140@0.1A@5V | 50 to 120|120 to 200 | 0.5@50mA@0.5A | 17 | 1500 | 3 | TO-126N | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TTC3710B,S4X(S
Trans GP BJT NPN 80V 12A 2000mW 3-Pin(3+Tab) TO-220SIS Magazine
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Toshiba | GP BJT | NPN | Bipolar Power | Si | Single | 80 | 80 | 1 | 6 | 1.2@0.3A@6A | 12 | 120@1A@1V|40@6A@1V | 50 to 120 | 0.4@0.3A@6A | 2000 | 200(Typ) | Magazine | 3 | TO-220SIS | TO | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CUHZ6V2,H3F
Zener Diode Single 6.2V 6% 30Ohm 1200mW 2-Pin US-H T/R
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Toshiba | Zener | Voltage Regulator | Single | 6.2 | 6% | 10 | 10 | 30 | 1200 | 1200 | Tape and Reel | 2 | US-H | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6L36TU,LF
Trans MOSFET N/P-CH Si 20V 0.5A/0.33A 6-Pin UF T/R Automotive AEC-Q101
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Von 0,1376 € bis 0,1403 €
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Toshiba | MOSFETs | Small Signal | Si | Dual | N|P | Enhancement | 2 | 20 | ±10 | 1 | 0.5@N Channel|0.33@P Channel | 1.23@4V@N Channel|1.2@4@P Channel | 46@10V@N Channel|43@10V@P Channel | 500 | 630@5V@N Channel|1310@4.5V@P Channel | Tape and Reel | 6 | UF | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3J358R,LF
Trans MOSFET P-CH Si 20V 6A 3-Pin SOT-23F T/R
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Von 0,0747 € bis 0,0814 €
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Toshiba | MOSFETs | Power MOSFET | Si | Single | P | Enhancement | 1 | 20 | ±10 | 1 | 6 | 38.5@8V | 1331@10V | 135 | 2000 | 22.1@8V | Tape and Reel | 3 | SOT-23F | SOT | Yes | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3J372R,LF
Trans MOSFET P-CH Si 30V 6A 3-Pin SOT-23F T/R Automotive AEC-Q101
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Von 0,0403 € bis 0,0506 €
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Toshiba | MOSFETs | Power MOSFET | Si | Single | P | Enhancement | 1 | 30 | 6 | 6 | 8.2@4.5V | 560@15V | 2000 | 42@10V | Tape and Reel | 3 | SOT-23F | SOT | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SA1162-GR(T5L,F,T)
Trans GP BJT PNP 50V 0.15A 150mW Automotive AEC-Q101 3-Pin S-Mini T/R
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Toshiba | GP BJT | PNP | Bipolar Small Signal | Si | Single | 50 | 50 | 1 | 5 | 0.15 | 200@2mA@6V | 200 to 300 | 0.3@10mA@100mA | 4 | 150 | 10 | Tape and Reel | 3 | S-Mini | SOT | No | Unknown | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SA1162-GR(TE85R,F
Trans GP BJT PNP 50V 0.15A 150mW Automotive AEC-Q101 3-Pin S-Mini T/R
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Toshiba | GP BJT | PNP | Bipolar Small Signal | Si | Single | 50 | 50 | 1 | 5 | 0.15 | 200@2mA@6V | 200 to 300 | 0.3@10mA@100mA | 4 | 150 | 10 | Tape and Reel | 3 | S-Mini | SOT | No | Unknown | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA1873-GR(TE85L,F
Trans GP BJT PNP 50V 0.15A 200mW 5-Pin USV T/R
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Toshiba | GP BJT | PNP | Bipolar Small Signal | Si | Dual Common Emitter | 50 | 50 | 2 | 5 | 0.15 | 200@2mA@6V | 200 to 300 | 0.3@10mA@100mA | 200 | Tape and Reel | 5 | USV | SOT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA2142(TE16L1,NQ)
Trans GP BJT PNP 600V 0.5A 1000mW 3-Pin(2+Tab) New PW-Mold T/R
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Von 0,2572 € bis 0,2727 €
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Toshiba | GP BJT | PNP | Bipolar Power | Si | Single | 600 | 600 | 1 | 7 | 0.9@10mA@100mA | 0.5 | 70@1mA@5V|100@50mA@5V | 50 to 120 | 1@10mA@100mA | 24 | 1000 | Tape and Reel | 3 | New PW-Mold | TO | No | Unknown | No | Unknown | Yes | Unknown | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SC2712-GR,LF(B
Trans GP BJT NPN 50V 0.15A 150mW 3-Pin S-Mini Automotive AEC-Q101
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Toshiba | GP BJT | NPN | Bipolar Small Signal | Si | Single | 50 | 60 | 1 | 5 | 0.15 | 70@2mA@6V | 50 to 120 | 0.25@10mA@100mA | 2 | 150 | 10 | 3 | S-Mini | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No |