Toshiba Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Maximum Rate of Rise of Off-State Voltage - (V/us) | Category | Surge Current Rating - (A) | Material | Configuration | Channel Type | Maximum Reverse Voltage - (V) | Maximum Rate of Rise of On-State Current - (A/us) | Channel Mode | Typical Zener Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Repetitive Peak Forward Blocking Voltage - (V) | Number of Elements per Chip | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Maximum Reverse Leakage Current - (uA) | Maximum Gate Peak Inverse Voltage - (V) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Minimum DC Current Gain | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Typical Gate Charge @ Vgs - (nC) | RMS On-State Current - (A) | Repetitive Peak Off-State Current - (mA) | Maximum Junction Ambient Thermal Resistance | Frequency Band | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Transition Frequency - (MHz) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Input Capacitance @ Vds - (pF) | Maximum Output Power - (W) | Typical Output Capacitance - (pF) | Maximum Power Dissipation - (mW) | Maximum Frequency - (MHz) | Maximum Drain-Source Resistance - (Ohm) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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2SC5714(TE12L,F)
Trans GP BJT NPN 20V 4A 1000mW 4-Pin(3+Tab) PW-Mini T/R
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Toshiba | GP BJT | NPN | Bipolar Power | Si | Single Dual Collector | 20 | 40 | 1 | 7 | 1.1@32mA@1.6A | 4 | 400@0.5A@2V|200@1.6A@2V | 200 to 300|300 to 500 | 0.15@32mA@1.6A | 1000 | Tape and Reel | 4 | PW-Mini | SOT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SC5819(TE12L,F)
Trans GP BJT NPN 20V 1.5A 1000mW 4-Pin(3+Tab) PW-Mini T/R
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Toshiba | GP BJT | NPN | Bipolar Power | Si | Single Dual Collector | 20 | 40 | 1 | 7 | 1.1@10mA@0.5A | 1.5 | 400@0.15A@2V|200@0.5A@2V | 200 to 300|300 to 500 | 0.12@10mA@0.5A | 1000 | Tape and Reel | 4 | PW-Mini | SOT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SC5810(TE12L,F)
Trans GP BJT NPN 50V 1A 2000mW 4-Pin(3+Tab) PW-Mini T/R
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Toshiba | GP BJT | NPN | Bipolar Power | Si | Single Dual Collector | 50 | 100 | 1 | 7 | 1.1@6mA@300mA | 1 | 400@0.1A@2V|200@0.3A@2V | 200 to 300|300 to 500 | 0.17@6mA@300mA | 2000 | Tape and Reel | 4 | PW-Mini | SOT | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SK3475(TE12L,F)
Trans RF MOSFET N-CH 20V 1A 4-Pin(3+Tab) PW-Mini T/R
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Toshiba | HF-MOSFETs | Si | Single Dual Source | N | Enhancement | 1 | 20 | 10 | 1 | 11@7.2V | 0.63(Min) | 3000 | 14.9(Min) | Tape and Reel | 4 | PW-Mini | SOT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC4738-GR(TE85L,F
Trans GP BJT NPN 50V 0.15A 120mW Automotive AEC-Q101 3-Pin SSM T/R
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Toshiba | GP BJT | NPN | Bipolar Small Signal | Si | Single | 50 | 60 | 1 | 5 | 0.15 | 200@2mA@6V | 200 to 300 | 0.25@10mA@100mA | 120 | Tape and Reel | 3 | SSM | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA1163-BL(TE85L,F
Trans GP BJT PNP 120V 0.1A 150mW 3-Pin S-Mini T/R
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Toshiba | GP BJT | PNP | Bipolar Small Signal | Si | Single | 120 | 120 | 1 | 5 | 0.1 | 350@2mA@6V | 300 to 500 | 0.3@1mA@10mA | 4 | 150 | 10 | Tape and Reel | 3 | S-Mini | SOT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SD2686(TE12L,ZC)
Trans Darlington NPN 70V 1A 1000mW 4-Pin(3+Tab) PW-Mini T/R
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Toshiba | Darlington BJT | NPN | Single | 70 | 50 | 1 | 1 | 8 | 2@1mA@1A | 2000@1A@2V | 1.2@1mA@0.5A|1.5@1mA@1A | 1000 | 4 | PW-Mini | SOT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SJ360(TE12L,F)
Trans MOSFET P-CH Si 60V 1A 4-Pin(3+Tab) PW-Mini T/R
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Toshiba | MOSFETs | Power MOSFET | Si | Single Dual Drain | P | Enhancement | 1 | 60 | ±20 | 1 | 6.5@10V | 6.5 | 155@10V | 1500 | 730@10V | Tape and Reel | 4 | PW-Mini | SOT | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SC2712-GR,LXGF(T
Trans GP BJT NPN 50V 0.15A 200mW Automotive AEC-Q101 3-Pin S-Mini T/R
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Toshiba | GP BJT | NPN | Bipolar Small Signal | Si | Single | 50 | 60 | 1 | 5 | 0.15 | 200@2mA@6V | 200 to 300 | 0.25@10mA@100mA | 2 | 200 | 10 | Tape and Reel | 3 | S-Mini | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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RN1404,LF
Trans Digital BJT NPN 50V 0.1A 200mW 3-Pin S-Mini T/R Automotive AEC-Q101
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Von 0,0218 € bis 0,0237 €
pro Stück
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Toshiba | Digital-BJT | NPN | Single | 50 | 0.1 | 47 | 1 | 80@10mA@5V | 0.3@0.25mA@5mA | 200 | Tape and Reel | 3 | S-Mini | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
HN1A01FE-GR,LF
Trans GP BJT PNP 50V 0.15A 100mW 6-Pin ES T/R Automotive AEC-Q101
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Von 0,034 € bis 0,037 €
pro Stück
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Toshiba | GP BJT | PNP | Bipolar Small Signal | Si | Dual | 50 | 50 | 2 | 5 | 0.15 | 200@2mA@6V | 200 to 300 | 0.3@10mA@100mA | 100 | Tape and Reel | 6 | ES | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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RN1402,LF
Trans Digital BJT NPN 50V 0.1A 200mW 3-Pin S-Mini T/R Automotive AEC-Q101
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Von 0,0218 € bis 0,0237 €
pro Stück
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Toshiba | Digital-BJT | NPN | Single | 50 | 0.1 | 10 | 1 | 50@10mA@5V | 0.3@0.25mA@5mA | 200 | Tape and Reel | 3 | S-Mini | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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RN1403,LF
Trans Digital BJT NPN 50V 0.1A 200mW 3-Pin S-Mini T/R Automotive AEC-Q101
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Von 0,0218 € bis 0,0237 €
pro Stück
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Toshiba | Digital-BJT | NPN | Single | 50 | 0.1 | 22 | 1 | 70@10mA@5V | 0.3@0.25mA@5mA | 200 | Tape and Reel | 3 | S-Mini | SOT | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3J374R,LXHF
Trans MOSFET P-CH Si 30V 4A Automotive AEC-Q101 3-Pin SOT-23F T/R
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Toshiba | MOSFETs | Power MOSFET | Si | Single | P | Enhancement | 1 | 30 | 10 | 4 | 5.9@10V | 5.9 | 280@15V | 2000 | 71@10V | Tape and Reel | 3 | SOT-23F | SOT | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPCA8131,LQ(S
Trans MOSFET P-CH Si 30V 13A 8-Pin SOP Advance T/R
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Toshiba | MOSFETs | Power MOSFET | Si | Single Quad Drain Triple Source | P | Enhancement | 1 | 30 | 20 | 2 | 13 | 40@10V | 40 | 1700@10V | 27000 | 17@10V | Tape and Reel | 8 | SOP Advance | SO | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TW015Z120C,S1F
Trans MOSFET N-CH SiC 1.2KV 100A 4-Pin(4+Tab) TO-247 Tube
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47,3114 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | SiC | Single Dual Source | N | Enhancement | 1 | 1200 | 25 | 100 | 158@18V | 6000@800V | 431000 | 21@18V | Tube | 4 | TO-247 | TO | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN1107MFV,L3F(CT Transistor Silicon NPN PCT Process Bias Resistor built-in Transistor |
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Toshiba | Digital-BJT | 3 | VESM | SOT | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
XPN7R104NC,L1XHQ
Trans MOSFET N-CH Si 40V 20A 8-Pin SOP Advance(WF) T/R Automotive AEC-Q101
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Von 0,2484 € bis 0,2635 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | Single Quad Drain Triple Source | N | Enhancement | 1 | 40 | ±20 | 2.5 | 20 | 21@10V | 21 | 1290@10V | 2270 | 7.1@10V | Tape and Reel | 8 | SOP Advance(WF) | SO | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN2907,LF(CT
Trans Digital BJT PNP 50V 0.1A 200mW 6-Pin US T/R
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Von 0,0272 € bis 0,0296 €
pro Stück
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Toshiba | Digital-BJT | PNP | Dual | 50 | 0.1 | 10 | 0.213 | 80@10mA@5V | 0.3@0.25mA@5mA | 200 | Tape and Reel | 6 | US | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CES520,L3F
Diode Small Signal Schottky Si 0.2A 2-Pin ESC T/R Automotive AEC-Q101
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Von 0,0164 € bis 0,0178 €
pro Stück
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Toshiba | Gleichrichter | Small Signal Schottky Diode | Si | Single | 0.2 | 1 | 0.6 | 5 | 17(Typ) | 150 | Tape and Reel | 2 | ESC | SOD | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK12A80W,S4X
Trans MOSFET N-CH Si 800V 11.5A 3-Pin(3+Tab) TO-220SIS Tube
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Von 1,5991 € bis 1,6955 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | Single | N | Enhancement | 1 | 800 | ±20 | 4 | 11.5 | 23@10V | 23 | 1400@300V | 45000 | 450@10V | Tube | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TTC012(Q) Trans GP BJT NPN 375V 2A 1100mW 3-Pin(3+Tab) New PW-Mold2 Sack |
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Toshiba | GP BJT | NPN | Bipolar Power | Si | Single | 375 | 800 | 1 | 8 | 1.3@62.5mA@0.5A | 2 | 100@0.3A@5V | 50 to 120 | 0.5@62.5mA@0.5A | 1100 | Sack | 3 | New PW-Mold2 | No | No | Unknown | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TTC014,L1NV
Trans GP BJT NPN 800V 1A 1000mW 3-Pin(2+Tab) New PW-Mold T/R
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Von 0,327 € bis 0,3544 €
pro Stück
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Toshiba | GP BJT | NPN | Bipolar Power | Si | Single | 800 | 900 | 1 | 8 | 1.3@50mA@0.5A | 1 | 80@1mA@5V|100@0.1A@5V|80@0.2A@5V | 50 to 120 | 1@50mA@0.5A | 1000 | Tape and Reel | 3 | New PW-Mold | TO | No | Unknown | Yes | Unknown | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TTA005,L1NQ(O
Trans GP BJT PNP 50V 5A 1200mW 3-Pin(2+Tab) New PW-Mold T/R
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Toshiba | GP BJT | PNP | Bipolar Power | Si | Single | 50 | 50 | 1 | 7 | 1.1@53mA@1.6A | 5 | 200@0.5A@2V|100@1.6A@2A | 50 to 120|120 to 200|200 to 300 | 0.27@53mA@1.6A | 1200 | Tape and Reel | 3 | New PW-Mold | TO | No | No | Unknown | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPCP8107,LF Trans MOSFET P-CH Si 40V 8A 8-Pin PS T/R Automotive AEC-Q101 |
Von 0,2199 € bis 0,2383 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | Single Quad Drain Triple Source | P | Enhancement | 1 | 40 | 10 | 3 | 8 | 44.6@10V | 2160@10V | 2010 | 18@10V | Tape and Reel | 8 | PS | No | Yes | AEC-Q101 | EAR99 | No |