Toshiba Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Material | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Frequency Band | Channel Type | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Number of Elements per Chip | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Peak On-State Voltage - (V) | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (A) | Maximum Continuous DC Collector Current - (mA) | Maximum Collector-Base Voltage - (V) | Maximum Drain-Gate Voltage - (V) | Typical Input Resistance - (kOhm) | Test Current - (mA) | Rated Average On-State Current - (A) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Power Dissipation - (mW) | Maximum Holding Current - (mA) | Maximum Drain-Source Voltage - (V) | Maximum Continuous Drain Current - (mA) | Maximum Base-Emitter Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum Forward Voltage - (V) | Maximum DC Collector Current - (A) | Peak Reverse Current - (uA) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Maximum Diode Capacitance - (pF) | Repetitive Peak Forward Blocking Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation @ 25C - (mW) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | RMS On-State Current - (A) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Repetitive Peak Off-State Current - (mA) | Maximum Transition Frequency - (MHz) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Frequency - (MHz) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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CUS10S30,H3F
Diode Small Signal Schottky Si 30V 1A 2-Pin USC T/R
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Von 0,0336 € bis 0,0405 €
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Toshiba | Gleichrichter | Small Signal Schottky Diode | Si | Single | 30 | 1 | 5 | 0.45 | 500 | 135(Typ) | Tape and Reel | 2 | USC | SOD | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN1905FE,LF(CT
Trans Digital BJT NPN 50V 0.1A 100mW 6-Pin ES T/R
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Von 0,1232 € bis 0,1298 €
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Toshiba | Digital-BJT | NPN | Dual | 50 | 0.1 | 2.2 | 100 | 0.047 | 80@10mA@5V | 0.3@0.25mA@5mA | Tape and Reel | 6 | ES | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CUS05F30,H3F
Diode Small Signal Schottky Si 0.5A 2-Pin USC T/R
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Von 0,0313 € bis 0,0341 €
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Toshiba | Gleichrichter | Small Signal Schottky Diode | Si | Single | 0.5 | 5 | 0.45 | 50 | 120(Typ) | Tape and Reel | 2 | USC | SOD | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CUS357,H3F
Diode Small Signal Schottky 45V 0.1A 2-Pin USC T/R Automotive AEC-Q101
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Von 0,0177 € bis 0,0193 €
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Toshiba | Gleichrichter | Small Signal Schottky Diode | Single | 45 | 0.1 | 1 | 200 | 0.6 | 5 | Tape and Reel | 2 | USC | SOD | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CMS01(TE12L,Q,M)
Diode Schottky 30V 3A 2-Pin M-FLAT T/R
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0,1756 €
pro Stück
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Toshiba | Gleichrichter | Schottky Diode | Single | 30 | 3 | 40 | 0.37 | 5000 | Tape and Reel | 2 | M-FLAT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN4983,LF(CT
Trans Digital BJT NPN/PNP 50V 0.1A 200mW 6-Pin US T/R Automotive AEC-Q101
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Toshiba | Digital-BJT | NPN|PNP | Dual | 50 | 0.1 | 22 | 200 | 1 | 70@10mA@5V | 0.3@0.25mA@5mA | Tape and Reel | 6 | US | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3J305T(TE85L,F)
Trans MOSFET P-CH Si 30V 1.7A 3-Pin TSM T/R
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Toshiba | MOSFETs | Si | Small Signal | P | Single | Enhancement | 1 | 700 | 30 | 1.7 | ±20 | 237@10V | 1.3@4V | 137@15V | Tape and Reel | 3 | TSM | SOT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA1923(Q)
Trans GP BJT PNP 400V 0.5A 1000mW 3-Pin(3+Tab) PW-Mold
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Toshiba | GP BJT | PNP | Si | Bipolar Power | Single | 1 | 400 | 0.9@10mA@100mA | 400 | 1000 | 7 | 0.5 | 120 to 200 | 140@20mA@5V|140@100mA@5V | 1@10mA@100mA | 200(Typ) | 3 | PW-Mold | TO | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC2230-Y(F)
Trans GP BJT NPN 160V 0.1A 800mW 3-Pin TO-92 Mod
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Toshiba | GP BJT | NPN | Si | Bipolar Power | Single | 1 | 160 | 200 | 800 | 5 | 0.1 | 120 to 200 | 120@10mA@10V | 0.5@5mA@50mA | 3 | TO-92 Mod | TO | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SC3225(TPE6,F)
Trans GP BJT NPN 40V 2A 900mW 3-Pin TO-92 Mod T/R
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Toshiba | GP BJT | NPN | Si | Bipolar Power | Single | 1 | 40 | 1.1@1mA@300mA | 40 | 900 | 7 | 2 | 500 to 3600 | 500@400mA@1V | 0.5@1mA@300mA | Tape and Reel | 3 | TO-92 Mod | TO | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC752GTM-O(F)
Trans GP BJT NPN 15V 0.2A 400mW 3-Pin TO-92
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Toshiba | GP BJT | NPN | Si | Bipolar Small Signal | Single | 1 | 15 | 1@1mA@20mA | 40 | 400 | 5 | 0.2 | 50 to 120 | 70@100mA@1V | 0.3@1mA@20mA | 3 | TO-92 | TO | Unknown | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CMS20I30A(TE12L,Q)
Diode Schottky 30V 2A 2-Pin M-FLAT T/R
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Toshiba | Gleichrichter | 30 | Tape and Reel | 2 | M-FLAT | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC4409(TE12L,F)
Trans GP BJT NPN 50V 2A 1000mW 4-Pin(3+Tab) PW-Mini T/R
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Toshiba | GP BJT | NPN | Si | Bipolar Power | Single Dual Collector | 1 | 50 | 1.2@0.05@1A | 80 | 1000 | 6 | 2 | 30 to 50|50 to 120|120 to 200 | 40@1.5A@2V|120@100mA@2V | 0.5@0.05A@1A | Tape and Reel | 4 | PW-Mini | SOT | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SC4684(Q)
Trans GP BJT NPN 20V 5A 1000mW 3-Pin(2+Tab) New PW-Mold
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Toshiba | GP BJT | NPN | Si | Bipolar Power | Single | 1 | 20 | 50 | 1000 | 8 | 5 | 200 to 300|300 to 500|500 to 3600 | 800@0.5A@2V|250@4A@2V | 0.5@40mA@4A | 3 | New PW-Mold | TO | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC5122(F) Trans GP BJT NPN 400V 0.05A 900mW 3-Pin TO-92 Mod |
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Toshiba | GP BJT | NPN | Si | Bipolar Power | Single | 1 | 400 | 400 | 900 | 7 | 0.05 | 50 to 120 | 80@1mA@5V|100@20mA@5V | 1@0.5mA@20mA | 3 | TO-92 Mod | TO | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC5859(Q)
Trans GP BJT NPN 750V 23A 210000mW 3-Pin(3+Tab) TO-3PL
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Toshiba | GP BJT | NPN | Si | Bipolar Power | Single | 1 | 750 | 1.5@4.5A@18A | 1700 | 210000 | 5 | 23 | 2 to 30|30 to 50 | 20@2A@5V|10@8A@5V|4.5@18A@5V | 3@4.5A@18A | 3 | TO-3PL | TO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
GT20J121,S4X(S)
Trans IGBT Chip N-CH 600V 20A 2W 3-Pin(3+Tab) TO-220SIS Magazine
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Toshiba | IGBT-Chip | N | Single | ±25 | 600 | 20 | 2 | Magazine | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
GT30J101(Q)
Trans IGBT Chip N-CH 600V 30A 155W 3-Pin(3+Tab) TO-3PN
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Toshiba | IGBT-Chip | N | Single | ±20 | 600 | 30 | 155 | 3 | TO-3PN | TO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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GT50G321(Q)
Trans IGBT Chip N-CH 400V 50A 130W 3-Pin(3+Tab) TO-3PL
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Toshiba | IGBT-Chip | N | Single | ±25 | 400 | 50 | 130 | 3 | TO-3PL | TO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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GT60M323(Q)
Trans IGBT Chip N-CH 900V 60A 200W 3-Pin(3+Tab) TO-3PL
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Toshiba | IGBT-Chip | N | Single | ±25 | 900 | 60 | 200 | 3 | TO-3PL | TO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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HN3B02FU(TE85L,F)
Trans GP BJT NPN/PNP 50V 0.15A 200mW 6-Pin US T/R
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Toshiba | GP BJT | NPN|PNP | Si | Bipolar Small Signal | Dual | 2 | 50 | 50 | 200 | 5 | 0.15 | 120 to 200 | 120@2mA@6V | 0.3@10mA@100mA | Tape and Reel | 6 | US | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SF3G41(N) Thyristor Silicon Planar Type |
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Toshiba | Silicon Controlled Rectifiers - SCRs | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SF8J41(N,Q) Thyristor Silicon Planar Type |
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Toshiba | Silicon Controlled Rectifiers - SCRs | 3 | TO-220AB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK065U65Z,RQ
Trans MOSFET N-CH Si 650V 38A 9-Pin(8+Tab) TOLL T/R
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Von 3,6131 € bis 3,8619 €
pro Stück
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Toshiba | MOSFETs | Si | Power MOSFET | N | Single Seven Source | Enhancement | 1 | 270000 | 650 | 38 | ±30 | 4 | 65@10V | 62@10V | 62 | 3650@300V | Tape and Reel | 9 | TOLL | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK155U65Z,RQ
Trans MOSFET N-CH Si 650V 18A 9-Pin(8+Tab) TOLL T/R
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Von 1,7429 € bis 1,8479 €
pro Stück
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Toshiba | MOSFETs | Si | Power MOSFET | N | Single Hex Source | Enhancement | 1 | 150000 | 650 | 18 | ±30 | 4 | 155@10V | 29@10V | 29 | 1635@300V | Tape and Reel | 9 | TOLL | No | No | No | No | EAR99 |