Toshiba Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Material | Frequency Band | Channel Type | Repetitive Peak Off-State Current - (mA) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Number of Elements per Chip | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (mA) | Maximum Collector-Base Voltage - (V) | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Continuous DC Collector Current - (A) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Peak On-State Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Rated Average On-State Current - (A) | Maximum Junction Ambient Thermal Resistance | RMS On-State Current - (A) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Maximum Output Power - (W) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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TTA1452B,S4X
Trans GP BJT PNP 80V 12A 2000mW 3-Pin(3+Tab) TO-220SIS Magazine
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Bestand
250
1,1731 €
pro Stück
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Toshiba | GP BJT | PNP | Bipolar Power | Si | Single | 80 | 1 | 80 | 6 | 1.2@0.3A@6A | 12 | 30 to 50|50 to 120|120 to 200 | 120@1A@1V|40@6A@1V | 2000 | 0.4@0.3A@6A | Magazine | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TJ15S06M3L(T6L1,NQ
Trans MOSFET P-CH Si 60V 15A 3-Pin(2+Tab) DPAK+ T/R Automotive AEC-Q101
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Bestand
1.619
Von 0,6844 € bis 1,5373 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | P | Single | Enhancement | 1 | 60 | 10 | 3 | 15 | 50@10V | 36@10V | 36 | 41000 | 1770@10V | Tape and Reel | 3 | DPAK+ | TO | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK208-Y(TE85L,F)
Trans JFET N-CH Si 3-Pin S-Mini T/R
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Bestand
1.623
Von 0,1555 € bis 0,297 €
pro Stück
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Toshiba | JFETs | Si | N | Single | 1 | -50 | 8.2 | 100 | 0.5(Typ) | Tape and Reel | 3 | S-Mini | SOT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK14N65W,S1F
Trans MOSFET N-CH Si 650V 13.7A 3-Pin(3+Tab) TO-247 Tube
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Bestand
30
1,103 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 650 | ±30 | 3.5 | 13.7 | 250@10V | 35@10V | 35 | 130000 | 1300@300V | Tube | 3 | TO-247 | TO | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SS382(TE85L,F)
Diode Switching 85V 0.1A 4-Pin USQ T/R
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Bestand
1.651
Von 0,099 € bis 0,2857 €
pro Stück
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Toshiba | Gleichrichter | Switching Diode | Dual Parallel | 85 | 0.1 | 2 | 1.2@0.1A | 0.5 | 4 | 100 | Tape and Reel | 4 | USQ | SOT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CRS09(TE85L,Q,M)
Diode Schottky 30V 1.5A 2-Pin S-FLAT T/R
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Bestand
3
0,0838 €
pro Stück
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Toshiba | Gleichrichter | Schottky Diode | Single | 30 | 1.5@Ta=84C | 30 | 0.46 | 50 | 140°C/W | Tape and Reel | 2 | S-FLAT | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6K781G,LF(S
Trans MOSFET N-CH Si 12V 7A 6-Pin WCSP-C T/R
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Bestand
1.800
Von 0,1711 € bis 0,4725 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Triple Drain Dual Source | Enhancement | 1 | 12 | ±8 | 1 | 7 | 18@4.5V | 5.4@4.5V | 2900 | 600@6V | Tape and Reel | 6 | WCSP-C | CSP | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CUZ20V,H3F
Zener Diode Single 20V 6% 70Ohm 600mW 2-Pin USC T/R
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Bestand
3.910
0,026 €
pro Stück
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Toshiba | Zener | Voltage Regulator | Single | 20 | 6% | 5 | 0.1 | 70 | 600 | 29(Typ) | 600 | Tape and Reel | 2 | USC | SOD | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC5200N(S1,E,S)
Trans GP BJT NPN 230V 15A 150000mW 3-Pin(3+Tab) TO-3PN Magazine
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Bestand
12
Von 1,6849 € bis 2,9443 €
pro Stück
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Toshiba | GP BJT | NPN | Bipolar Power | Si | Single | 230 | 1 | 230 | 5 | 15 | 50 to 120|30 to 50 | 80@1A@5V|35@7A@5V | 0.83 | 150000 | 3@0.8A@8A | 200 | Magazine | 3 | TO-3PN | TO | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK7R0E08QM,S1X
Trans MOSFET N-CH Si 80V 64A 3-Pin(3+Tab) TO-220 Tube
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Bestand
150
0,3794 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 80 | ±20 | 3.5 | 64 | 7@10V | 24@6V|39@10V | 39 | 87000 | 2700@40V | U-MOS X-H | Tube | 3 | TO-220 | TO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CMH04(T2L,TEM,Q)
Diode Switching 200V 1A 2-Pin M-FLAT T/R
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Bestand
186
Von 0,0509 € bis 0,0595 €
pro Stück
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Toshiba | Gleichrichter | Switching Diode | Single | 200 | 1@Ta=26C | 20 | 0.98 | 10 | 35 | Tape and Reel | 2 | M-FLAT | No | Unknown | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
HN1C01FUGRLFT
Trans GP BJT NPN 50V 0.15A 200mW 6-Pin US T/R
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Bestand
1.050
Von 0,0294 € bis 0,0624 €
pro Stück
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Toshiba | GP BJT | NPN | Bipolar Small Signal | Si | Dual | 50 | 2 | 60 | 5 | 0.15 | 200 to 300 | 200@2mA@6V | 200 | 0.25@10mA@100mA | Tape and Reel | 6 | US | No | Unknown | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK110U65Z,RQ
Trans MOSFET N-CH Si 650V 24A 9-Pin(8+Tab) TOLL T/R
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Bestand
1.960
1,4774 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Hex Source | Enhancement | 1 | 650 | ±30 | 4 | 24 | 110@10V | 40@10V | 40 | 190000 | 2250@300V | DTMOSVI | Tape and Reel | 9 | TOLL | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPH5900CNH,L1Q(M
Trans MOSFET N-CH Si 150V 18A 8-Pin SOP Advance T/R
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Bestand
7.784
Von 0,3526 € bis 0,5923 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 150 | ±20 | 4 | 18 | 59@10V | 7@10V | 7 | 42000 | 460@75V | Tape and Reel | 8 | SOP Advance | SO | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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RN1404,LF(T
Trans Digital BJT NPN 50V 0.1A 200mW 3-Pin S-Mini T/R
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Bestand
2.190
Von 0,0262 € bis 0,0827 €
pro Stück
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Toshiba | Digital-BJT | NPN | Single | 50 | 47 | 1 | 0.1 | 80@10mA@5V | 200 | 0.3@0.25mA@5mA | Tape and Reel | 3 | S-Mini | SOT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA2060(TE12L,F)
Trans GP BJT PNP 50V 2A 2500mW 4-Pin(3+Tab) PW-Mini T/R
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Bestand
151
Von 0,1859 € bis 0,383 €
pro Stück
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Toshiba | GP BJT | PNP | Bipolar Power | Si | Single Dual Collector | 50 | 1 | 50 | 7 | 1.1@0.033A@1A | 2 | 50 to 120|120 to 200|200 to 300 | 200@0.3A@2V|100@1A@2V | 2500 | 0.2@0.033A@1A | Tape and Reel | 4 | PW-Mini | SOT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN1105MFV,L3F(CT Transistor Silicon NPN Epitaxial PCT Process Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications |
Bestand
49
0,0832 €
pro Stück
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Toshiba | Digital-BJT | 3 | VESM | SOT | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CMS08(T2L,TEMQ)
Diode Schottky 30V 1A 2-Pin M-FLAT T/R
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Bestand
2.320
Von 0,0779 € bis 0,2041 €
pro Stück
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Toshiba | Gleichrichter | Schottky Diode | Single | 30 | 1@Ta=51C | 25 | 0.37 | 1500 | Tape and Reel | 2 | M-FLAT | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CBS10S30,L3F(T
Diode Small Signal Schottky Si 30V 1A 2-Pin CST-B T/R
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Bestand
400
1,5286 €
pro Stück
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Toshiba | Gleichrichter | Small Signal Schottky Diode | Si | Single | 30 | 1 | 3 | 0.45 | 500 | 135(Typ) | Tape and Reel | 2 | CST-B | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CUZ12V,H3F
Zener Diode Single 12V 5% 30Ohm 600mW 2-Pin USC T/R
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Bestand
145
0,026 €
pro Stück
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Toshiba | Zener | Voltage Regulator | Single | 12 | 5% | 5 | 0.1 | 30 | 600 | 44(Typ) | 600 | Tape and Reel | 2 | USC | SOD | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TMBT3904,LM
Trans GP BJT NPN 50V 0.15A 1000mW 3-Pin SOT-23 T/R
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Bestand
13
0,012 €
pro Stück
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Toshiba | GP BJT | NPN | Bipolar Small Signal | Si | Single | 50 | 1 | 60 | 5 | 0.85@1mA@10mA|0.95@5mA@50mA | 0.15 | 30 to 50|50 to 120 | 60@0.1mA@1V|80@1mA@1V|100@10mA@1V|60@50mA@1V|30@100mA@1V | 1000 | 0.2@1mA@10mA|0.3@5mA@50mA | 10 | Tape and Reel | 3 | SOT-23 | SOT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK31V60W,LVQ(S
Trans MOSFET N-CH Si 600V 30.8A 5-Pin DFN EP
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Bestand
1.780
Von 1,4765 € bis 3,4567 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Triple Source | Enhancement | 1 | 600 | ±30 | 3.7 | 30.8 | 98@10V | 86@10V | 86 | 240000 | 3000@300V | DTMOSIV | 5 | DFN EP | DFN | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3J36FS,LXGF(T
Trans MOSFET P-CH Si 20V 0.33A 3-Pin SSM T/R Automotive AEC-Q101
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Bestand
3.000
Von 0,0657 € bis 0,1477 €
pro Stück
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Toshiba | MOSFETs | Small Signal | Si | P | Single | Enhancement | 1 | 20 | ±8 | 0.33 | 1310@4.5V | 1.2@4V | 150 | 43@10V | Tape and Reel | 3 | SSM | No | No | Yes | AEC-Q101 | Yes | Unknown | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK3R1A04PL,S4X(S
Trans MOSFET N-CH Si 40V 82A 3-Pin(3+Tab) TO-220SIS
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Bestand
157
Von 0,6123 € bis 1,6849 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 40 | ±20 | 82 | 3.1@10V | 29.7@4.5V|63.4@10V | 36000 | 4670@20V | 3 | TO-220SIS | TO | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK39N60W,S1VF(S
Trans MOSFET N-CH Si 600V 38.8A 3-Pin(3+Tab) TO-247
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Bestand
23
Von 5,0722 € bis 5,7757 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 38.8 | 65@10V | 110@10V | 110 | 270000 | 4100@300V | 3 | TO-247 | TO | No | No | No | No | No | EAR99 | No |