Toshiba Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Maximum Rate of Rise of Off-State Voltage - (V/us) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Material | Frequency Band | Channel Type | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Current - (mA) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Maximum Reverse Current - (uA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Number of Elements per Chip | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Peak Reverse Current - (uA) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation - (mW) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | RMS On-State Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Repetitive Peak Off-State Current - (mA) | Maximum Junction Case Thermal Resistance | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Frequency - (MHz) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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2SK2825(TE85L,F)
Trans MOSFET N-CH Si 20V 0.1A 3-Pin SSM T/R
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Toshiba | MOSFETs | Small Signal | Si | N | Single | Enhancement | 1 | 20 | 10 | 100 | 0.1 | 28000@2.5V | 12@1.5V | Tape and Reel | 3 | SSM | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CUS357,H3XGF(T
Diode Small Signal Schottky 45V 0.1A 2-Pin USC T/R Automotive AEC-Q101
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Toshiba | Gleichrichter | Small Signal Schottky Diode | Single | 45 | 0.1 | 1 | 0.6 | 5 | 200 | Tape and Reel | 2 | USC | SOD | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK13A60D(Q)
Trans MOSFET N-CH Si 600V 13A 3-Pin(3+Tab) TO-220SIS Tube
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 50000 | 13 | 430@10V | 40@10V | 40 | 2300@25V | Tube | 3 | TO-220SIS | TO | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CRS04(TE85L,Q)
Diode Schottky 40V 1A 2-Pin S-FLAT T/R
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Toshiba | Gleichrichter | Schottky Diode | Single | 40 | 1@Ta=31C | 20 | 0.49@0.7A | 100 | 140°C/W | Tape and Reel | 2 | S-FLAT | No | Unknown | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SK3844(Q)
Trans MOSFET N-CH Si 60V 45A 3-Pin(3+Tab) TO-220NIS
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 60 | ±20 | 45000 | 45 | 5.8@10V | 198@10V | 198 | 12400@10V | 3 | TO-220NIS | TO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK13P25D,RQ
Trans MOSFET N-CH Si 250V 13A 3-Pin(2+Tab) DPAK T/R
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Von 0,3717 € bis 0,4028 €
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 250 | ±20 | 96000 | 13 | 250@10V | 25@10V | 25 | 1100@100V | Tape and Reel | 3 | DPAK | TO | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK19A50W,S5X
Trans MOSFET N-CH Si 500V 18.5A 3-Pin(3+Tab) TO-220SIS Tube
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Von 1,0274 € bis 1,0975 €
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 500 | ±30 | 40000 | 18.5 | 190@10V | 38@10V | 1350@300V | Tube | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPN2R304PL,L1Q
Trans MOSFET N-CH Si 40V 100A 8-Pin TSON Advance
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Von 0,2911 € bis 0,3155 €
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 40 | ±20 | 2670 | 100 | 2.3@10V | 19.4@4.5V|41@10V | 41 | 2750@20V | 8 | TSON Advance | SON | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TRS8V65H,LQ
Diode Schottky SiC 650V 23A 4-Pin DFN EP T/R
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Toshiba | Gleichrichter | Schottky Diode | SiC | Single Dual Anode | 650 | 23 | 410 | 1.35@8A | 90 | 68000 | Tape and Reel | 4 | DFN EP | DFN | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TTA1713-Y,LF
Trans GP BJT PNP 45V 0.5A 200mW 3-Pin S-Mini T/R
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Von 0,0312 € bis 0,0341 €
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Toshiba | GP BJT | PNP | Bipolar Power | Si | Single | 45 | 50 | 1 | 5 | 0.5 | 200 | 30 to 50|50 to 120 | 120@100mA@1V|40@500mA@1V | 0.4@50mA@500mA | Tape and Reel | 3 | S-Mini | SOT | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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RN1401,LF(B
Trans Digital BJT NPN 50V 0.1A 200mW 3-Pin S-Mini T/R
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Toshiba | Digital-BJT | NPN | Single | 50 | 0.1 | 4.7 | 1 | 200 | 30@10mA@5V | 0.3@0.25mA@5mA | Tape and Reel | 3 | S-Mini | SOT | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC1923-Y(F)
Trans RF BJT NPN 30V 0.02A 3-Pin TO-92
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Toshiba | HF-BJT | NPN | Si | Single | 30 | 40 | 1 | 4 | 0.02 | 6V/1mA | 100 | 50 to 120 | 100@1mA@6V | 18 | 550(Typ) | 4 | 3 | TO-92 | TO | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK1771(TE85L,F)
Trans RF MOSFET N-CH 12.5V 0.03A 4-Pin SMQ T/R
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Toshiba | HF-MOSFETs | Si | N | Single | Enhancement | 1 | 12.5 | ±8 | 150 | 0.03 | 3.5@8V | 23 | 2.2 | Tape and Reel | 4 | SMQ | SOT | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK4A80E,S4X
Trans MOSFET N-CH Si 800V 4A 3-Pin(3+Tab) TO-220SIS Tube
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Von 0,5059 € bis 0,5483 €
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 800 | ±30 | 4 | 35000 | 4 | 3500@10V | 15@10V | 15 | 650@25V | Tube | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK3176(F)
Trans MOSFET N-CH Si 200V 30A 3-Pin(3+Tab) TO-3PN
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 200 | ±20 | 150000 | 30 | 52@10V | 125@10V | 125 | 5400@10V | 3 | TO-3PN | TO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK6P65W,RQ
Trans MOSFET N-CH Si 650V 5.8A 3-Pin(2+Tab) DPAK T/R
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Von 0,5759 € bis 0,6241 €
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 650 | ±30 | 60000 | 5.8 | 1050@10V | 11@10V | 11 | 390@300V | Tape and Reel | 3 | DPAK | TO | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SS424(TPH3,F)
Diode Small Signal Schottky 30V 0.3A 2-Pin ESC T/R
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Toshiba | Gleichrichter | Small Signal Schottky Diode | Single | 30 | 0.3 | 1 | 0.5@0.2A | 50 | 150 | Tape and Reel | 2 | ESC | SOD | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPHR6503PL,L1Q
Trans MOSFET N-CH Si 30V 393A 8-Pin SOP Advance T/R
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Von 0,7637 € bis 0,8158 €
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 30 | ±20 | 2.1 | 3000 | 393 | 0.65@10V | 52@4.5V|110@10V | 110 | 7700@15V | 8 | SOP Advance | SO | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1SV277TPH3F
Varactor Diode Single 10V 4pF 2-Pin USC T/R
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Von 0,0679 € bis 0,074 €
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Toshiba | Varaktors | VCO | UHF | Single | 10 | 0.003 | 2 | 1V/4V | 4@1V | Tape and Reel | 2 | USC | SOD | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3K05FU(TE85L,F)
Trans MOSFET N-CH Si 20V 0.4A 3-Pin USM T/R
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Toshiba | MOSFETs | Small Signal | Si | N | Single | Enhancement | 1 | 20 | ±12 | 150 | 0.4 | 800@4V | 22@3V | Tape and Reel | 3 | USM | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TD62105PG(5,J)
Trans Darlington NPN 25V 0.5A 1000mW 16-Pin PDIP
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Toshiba | Darlington BJT | NPN | Array 7 | 25 | 7 | 0.5 | 1000 | 1000@350mA@2V | 2.2@350mA|2@200mA|1.8@100mA | 0.13um | 16 | PDIP | DIP | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1SS403,H3F(B
Diode Switching Si 250V 0.1A 2-Pin USC Automotive AEC-Q101
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Toshiba | Gleichrichter | Switching Diode | Si | Single | 250 | 0.1 | 2 | 1.2 | 1 | 200 | 3 | 60 | 2 | USC | SOD | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SB1617(TP,Q) Silicon PNP Epitaxial Type (Darlington) |
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Toshiba | Darlington BJT | Tape and Reel | 3 | TPS | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CRF02(TE85L,Q,M)
Diode Switching 800V 0.5A 2-Pin S-FLAT T/R
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Toshiba | Gleichrichter | Switching Diode | Single | 800 | 0.5@Ta=84C | 10 | 3 | 50 | 100 | Tape and Reel | 2 | S-FLAT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK25A20D,S5X(M
Trans MOSFET N-CH Si 200V 25A 3-Pin(3+Tab) TO-220SIS
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 200 | ±20 | 45000 | 25 | 70@10V | 60@10V | 60 | 2550@100V | 3 | TO-220SIS | TO | No | No | No | No | EAR99 |