Toshiba Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Maximum Rate of Rise of Off-State Voltage - (V/us) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Material | Frequency Band | Channel Type | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Current - (mA) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Maximum Reverse Current - (uA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Number of Elements per Chip | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Peak Reverse Current - (uA) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation - (mW) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | RMS On-State Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Repetitive Peak Off-State Current - (mA) | Maximum Junction Case Thermal Resistance | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Frequency - (MHz) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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CRZ39(TE85L,Q,M)
Zener Diode Single 39V 10% 35Ohm 700mW 2-Pin S-FLAT T/R
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Von 0,1306 € bis 0,1415 €
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Toshiba | Zener | Voltage Regulator | Single | 39 | 10% | 8 | 10 | 35 | 700 | 700 | Tape and Reel | 2 | S-FLAT | No | Unknown | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK3R1A04PL,S4X
Trans MOSFET N-CH Si 40V 82A 3-Pin(3+Tab) TO-220SIS Tube
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Von 0,5219 € bis 0,5656 €
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 40 | ±20 | 2.4 | 36000 | 82 | 3.1@10V | 29.7@4.5V|63.4@10V | 63.4 | 4670@20V | Tube | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CRS15I30A(TE85L,QM
Diode Schottky 30V 1.5A 2-Pin S-FLAT T/R
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Bestand
3.000
0,0758 €
pro Stück
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Toshiba | Gleichrichter | Schottky Diode | Single | 30 | 1.5 | 20 | 0.46 | 60 | Tape and Reel | 2 | S-FLAT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC3666-Y(F) Transistor Silicon NPN Epitaxial Type (PCT Process) Audio Power Amplifier Applications |
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Toshiba | GP BJT | 3 | MSTM | No | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC5066-O,LF(T
Trans RF BJT NPN 12V 0.03A 100mW 3-Pin SSM T/R
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Toshiba | HF-BJT | NPN | Si | Single | 12 | 20 | 1 | 3 | 0.03 | 5V/10mA | 100 | 50 to 120 | 80@10mA@5V | 0.7 | 17 | 7000(Typ) | 2 | Tape and Reel | 3 | SSM | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN2004(F)
Trans Digital BJT PNP 50V 0.1A 400mW 3-Pin TO-92
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Toshiba | Digital-BJT | PNP | Single | 50 | 0.1 | 47 | 1 | 400 | 80@10mA@5V | 0.3@0.25mA@5mA | 3 | TO-92 | TO | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1Z10A(Q)
Zener Diode Single 10V 5% 30Ohm 1000mW 2-Pin DO-15
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Toshiba | Zener | Voltage Regulator | Single | 10 | 5% | 10 | 1.2 | 10 | 30 | 1000 | 1000 | 2 | DO-15 | DO | No | Unknown | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CRZ39(TE85L,Q)
Zener Diode Single 39V 10% 35Ohm 700mW 2-Pin S-FLAT T/R
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Toshiba | Zener | Voltage Regulator | Single | 39 | 10% | 8 | 10 | 35 | 700 | 700 | Tape and Reel | 2 | S-FLAT | No | Unknown | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
USF10J48(Q)
Thyristor SCR 600V 176A 3-Pin(2+Tab) TO-220SM
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Toshiba | Silicon Controlled Rectifiers - SCRs | 50(Typ) | 100 | 1 | 600 | 10 | 40 | 1.5 | 5 | 600 | 10 | 0.02 | 3 | TO-220SM | TO | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
HN1B04FU-GR,LF
Trans GP BJT NPN/PNP 50V 0.15A 200mW 6-Pin US T/R Automotive AEC-Q101
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Von 0,0339 € bis 0,037 €
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Toshiba | GP BJT | NPN|PNP | Bipolar Small Signal | Si | Dual | 50 | 60@NPN|50@PNP | 2 | 5 | 0.15 | 200 | 200 to 300 | 200@2mA@6V | 0.25@10mA@100mA@NPN|0.3@10mA@100mA@PNP | Tape and Reel | 6 | US | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CRS13(TE85L,Q,M) Schottky Barrier Diode |
Von 0,1198 € bis 0,1298 €
pro Stück
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Toshiba | Gleichrichter | Schottky Diode | 60 | 50@60V | Tape and Reel | 2 | S-FLAT | No | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TRS2E65F,S1Q
Diode Schottky SiC 650V 2A 2-Pin(2+Tab) TO-220 Tube
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Von 0,4417 € bis 0,4786 €
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Toshiba | Gleichrichter | Schottky Diode | SiC | Single | 650 | 2 | 21 | 1.6 | 20 | Tube | 2 | TO-220 | TO | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SS301(TE85L,F)
Diode Switching Si 85V 0.1A 3-Pin USM T/R Automotive AEC-Q101
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Toshiba | Gleichrichter | Switching Diode | Si | Dual Common Cathode | 85 | 0.1 | 2 | 1.2 | 0.5 | 200 | 3 | 4 | Tape and Reel | 3 | USM | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK17V65W,LQ
Trans MOSFET N-CH Si 650V 17.3A 5-Pin DFN EP T/R
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Triple Source | Enhancement | 1 | 650 | ±30 | 156000 | 17.3 | 210@10V | 45@10V | 1800@300V | Tape and Reel | 5 | DFN EP | DFN | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SSM3K72CFS,LF
Trans MOSFET N-CH Si 60V 0.17A 3-Pin SSM T/R
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Von 0,0176 € bis 0,0193 €
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Toshiba | MOSFETs | Small Signal | Si | N | Single | Enhancement | 1 | 60 | ±20 | 500 | 0.17 | 3900@10V | 0.27@4.5V | 11@10V | Tape and Reel | 3 | SSM | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3J327R,LF
Trans MOSFET P-CH Si 20V 3.9A 3-Pin SOT-23F T/R
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Von 0,0361 € bis 0,0459 €
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Toshiba | MOSFETs | Small Signal | Si | P | Single | Enhancement | 1 | 20 | ±8 | 2000 | 3.9 | 93@4.5V | 4.6@4.5V | 290@10V | Tape and Reel | 3 | SOT-23F | SOT | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK2233(F)
Trans MOSFET N-CH Si 60V 45A 3-Pin(3+Tab) TO-3PN
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 60 | ±20 | 100000 | 45 | 30@10V | 60@10V | 60 | 1800@10V | 3 | TO-3PN | TO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK192A-BL(F) Trans RF MOSFET N-CH 3-Pin |
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Toshiba | HF-MOSFETs | JFET | Si | N | Single | Depletion | 1 | 200 | 3.5@10V | 24 | 3.5 | 3 | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK39N60W,S1VF
Trans MOSFET N-CH Si 600V 38.8A 3-Pin(3+Tab) TO-247 Tube
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Von 2,8256 € bis 3,0321 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 270000 | 38.8 | 65@10V | 110@10V | 110 | 4100@300V | Tube | 3 | TO-247 | TO | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK170V65Z,LQ
Trans MOSFET N-CH 650V 18A 5-Pin DFN EP
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Von 1,8838 € bis 2,0369 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | N | Single Triple Source | Enhancement | 1 | 650 | ±30 | 150000 | 18 | 170@10V | 29@10V | 29 | 1635@300V | 5 | DFN EP | DFN | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA1620-Y(TE85L,F)
Trans GP BJT PNP 80V 0.3A 200mW 3-Pin S-Mini T/R
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Toshiba | GP BJT | PNP | Bipolar Small Signal | Si | Single | 80 | 80 | 1 | 5 | 0.3 | 200 | 120 to 200 | 120@50mA@2V | 0.4@20mA@200mA | Tape and Reel | 3 | S-Mini | SOT | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CMZ12(TE12L,Q,M)
Zener Diode Single 12V 10% 30Ohm 2000mW 2-Pin M-FLAT T/R
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Toshiba | Zener | Voltage Regulator | Single | 12 | 10% | 10 | 10 | 30 | 2000 | Tape and Reel | 2 | M-FLAT | No | Unknown | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPN22006NH,LQ
Trans MOSFET N-CH Si 60V 21A 8-Pin TSON EP Advance T/R
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Von 0,3453 € bis 0,3742 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 60 | ±20 | 1900 | 21 | 22@10V | 12@10V | 12 | 710@30V | Tape and Reel | 8 | TSON EP Advance | SON | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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GT15J311(Q)
Trans IGBT Chip N-CH 600V 15A 70W 3-Pin(3+Tab)
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Toshiba | IGBT-Chip | N | Single | ±20 | 600 | 15 | 70 | 3 | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CRS20I30B(TE85L,Q)
Diode Schottky 30V 2A 2-Pin S-FLAT T/R
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Toshiba | Gleichrichter | Schottky Diode | Single | 30 | 2 | 30 | 0.45 | 100 | Tape and Reel | 2 | S-FLAT | No | No | No | No | No | EAR99 |