Toshiba Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Maximum Rate of Rise of Off-State Voltage - (V/us) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Material | Frequency Band | Channel Type | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Current - (mA) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Maximum Reverse Current - (uA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Number of Elements per Chip | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Peak Reverse Current - (uA) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation - (mW) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | RMS On-State Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Repetitive Peak Off-State Current - (mA) | Maximum Junction Case Thermal Resistance | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Frequency - (MHz) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
CRS20I30B(TE85L,Q)
Diode Schottky 30V 2A 2-Pin S-FLAT T/R
|
|
Toshiba | Gleichrichter | Schottky Diode | Single | 30 | 2 | 30 | 0.45 | 100 | Tape and Reel | 2 | S-FLAT | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SD2088(F) Trans Darlington NPN 60V 2A 900mW 3-Pin TO-92 Mod |
|
Toshiba | Darlington BJT | NPN | Single | 60 | 60 | 1 | 2 | 8 | 2@1mA@1A | 900 | 2000@1A@2V | 1.5@1mA@1A | 3 | TO-92 Mod | TO | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3J356R,LXHF
Trans MOSFET P-CH Si 60V 2A 3-Pin SOT-23F Automotive AEC-Q101
|
|
Toshiba | MOSFETs | Power MOSFET | Si | P | Single | Enhancement | 1 | 60 | 10 | 2000 | 2 | 300@10V | 8.3@10V | 8.3 | 330@10V | 3 | SOT-23F | SOT | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SA965-O,F(J Transistor Silicon PNP Epitaxial Type |
|
Toshiba | GP BJT | 3 | TO-92 Mod | TO | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SJ512(F)
Trans MOSFET P-CH Si 250V 5A 3-Pin(3+Tab) TO-220NIS
|
|
Toshiba | MOSFETs | Power MOSFET | Si | P | Single | Enhancement | 1 | 250 | ±20 | 30000 | 5 | 1250@10V | 22@10V | 22 | 800@10V | 3 | TO-220NIS | TO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA1298-Y,LF
Trans GP BJT PNP 25V 0.8A 200mW 3-Pin S-Mini T/R Automotive AEC-Q101
|
Von 0,0515 € bis 0,0563 €
pro Stück
|
Toshiba | GP BJT | PNP | Bipolar Small Signal | Si | Single | 25 | 30 | 1 | 5 | 0.8 | 200 | 120 to 200 | 160@100mA@1V | 0.4@20mA@500mA | Tape and Reel | 3 | S-Mini | SOT | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6L35FU(TE85L,F)
Trans MOSFET N/P-CH Si 20V 0.18A/0.1A 6-Pin US T/R Automotive AEC-Q101
|
Von 0,0705 € bis 0,0769 €
pro Stück
|
Toshiba | MOSFETs | Small Signal | Si | N|P | Dual | Enhancement | 2 | 20 | ±10 | 200 | 0.18@N Channel|0.1@P Channel | 3000@4V@N Channel|8000@4V@P Channel | 9.5@3V@N Channel|12.2@3V@P Channel | Tape and Reel | 6 | US | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK25V60X5,LQ
Trans MOSFET N-CH Si 600V 25A 5-Pin DFN EP T/R
|
Von 2,5762 € bis 2,7646 €
pro Stück
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single Triple Source | Enhancement | 1 | 600 | ±30 | 180000 | 25 | 150@10V | 60@10V | 60 | 2400@300V | Tape and Reel | 5 | DFN EP | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
2SK2385(F)
Trans MOSFET N-CH Si 60V 36A 3-Pin(3+Tab) TO-220NIS
|
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 60 | ±20 | 40000 | 36 | 30@10V | 60@10V | 60 | 1800@10V | 3 | TO-220NIS | TO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TRS12V65H,LQ
Diode Schottky SiC 650V 30A 4-Pin DFN EP T/R
|
|
Toshiba | Gleichrichter | Schottky Diode | SiC | Single Dual Anode | 650 | 30 | 640 | 1.35@12A | 120 | 88000 | Tape and Reel | 4 | DFN EP | DFN | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPH2R408QM,L1Q
Trans MOSFET N-CH Si 80V 120A 8-Pin SOP Advance T/R
|
0,5451 €
pro Stück
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 80 | ±20 | 3000 | 120 | 2.43@10V | 55@4.5V|87@10V | 5870@40V | Tape and Reel | 8 | SOP Advance | SO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
2SD2131(Q,M)
TRANSISTOR DARLINGTON NPN 70V 5A
|
|
Toshiba | Darlington BJT | 3 | TO-220NIS | TO | No | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TBAV70,LM
Diode Switching Si 85V 0.215A 3-Pin SOT-23 T/R
|
|
Toshiba | Gleichrichter | Switching Diode | Si | Dual Common Cathode | 85 | 0.215 | 2 | 1.25@0.15A | 0.5 | 320 | 0.9(Typ) | 4 | Tape and Reel | 3 | SOT-23 | SOT | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CMZ20(TE12L,Q,M)
Zener Diode Single 20V 10% 30Ohm 2000mW 2-Pin M-FLAT T/R
|
|
Toshiba | Zener | Voltage Regulator | Single | 20 | 10% | 10 | 10 | 30 | 2000 | Tape and Reel | 2 | M-FLAT | No | Unknown | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK100L60W,VQ
Trans MOSFET N-CH Si 600V 100A 3-Pin(3+Tab) TO-3PL Tray
|
Von 19,672 € bis 20,7042 €
pro Stück
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 3.7 | 797000 | 100 | 18@10V | 360@10V | 360 | 15000@300V | Tray | 3 | TO-3PL | TO | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK42E12N1,S1X
Trans MOSFET N-CH Si 120V 88A 3-Pin(3+Tab) TO-220 Magazine
|
Von 0,8872 € bis 0,9138 €
pro Stück
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 120 | ±20 | 4 | 140000 | 88 | 9.4@10V | 52@10V | 52 | 3100@60V | Magazine | 3 | TO-220 | TO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA1586-GR,LF(B
Trans GP BJT PNP 50V 0.15A 100mW 3-Pin USM Automotive AEC-Q101
|
|
Toshiba | GP BJT | PNP | Bipolar Small Signal | Si | Single | 50 | 50 | 1 | 5 | 0.15 | 100 | 200 to 300 | 200@2mA@6V | 0.3@10mA@100mA | 10 | 3 | USM | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM5N15FU,LF
Trans MOSFET N-CH Si 30V 0.1A 5-Pin USV T/R
|
Von 0,0543 € bis 0,0592 €
pro Stück
|
Toshiba | MOSFETs | Small Signal | Si | N | Dual | Enhancement | 2 | 30 | ±20 | 200 | 0.1 | 4000@4V | 7.8@3V | Tape and Reel | 5 | USV | SOT | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
TPH1R306P1,L1Q
Trans MOSFET N-CH Si 60V 100A 8-Pin SOP Advance T/R
|
Von 0,9207 € bis 0,9836 €
pro Stück
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 60 | ±20 | 3000 | 100 | 1.28@10V | 44@4.5V|91@10V | 6250@30V | Tape and Reel | 8 | SOP Advance | SO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPWR6003PL,L1Q
Trans MOSFET N-CH Si 30V 412A 8-Pin DSOP EP Advance T/R
|
1,1354 €
pro Stück
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 30 | ±20 | 2.1 | 3000 | 412 | 600@10V | 52@4.5V|110@10V | 110 | 7700@15V | Tape and Reel | 8 | DSOP EP Advance | SO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
HN2D01FU(TE85L,F)
Diode Switching 85V 0.08A 6-Pin US T/R
|
|
Toshiba | Gleichrichter | Switching Diode | Triple Parallel | 85 | 0.08 | 1 | 1.2@0.1A | 0.5 | 200 | 4 | Tape and Reel | 6 | US | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SJ377(TE16L1,NQ)
Trans MOSFET P-CH Si 60V 5A 3-Pin(2+Tab) New PW-Mold T/R
|
|
Toshiba | MOSFETs | Power MOSFET | Si | P | Single | Enhancement | 1 | 60 | ±20 | 2 | 20000 | 5 | 190@10V | 22@10V | 22 | 630@10V | Tape and Reel | 3 | New PW-Mold | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK1830(TE85L,F)
Trans MOSFET N-CH Si 20V 0.05A 3-Pin SSM T/R
|
|
Toshiba | MOSFETs | Small Signal | Si | N | Single | Enhancement | 1 | 20 | 10 | 100 | 0.05 | 40000@2.5V | 5.5@3V | 20000@2.5V | Tape and Reel | 3 | SSM | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
2SA1873-Y(TE85L,F)
Trans GP BJT PNP 50V 0.15A 200mW 5-Pin USV T/R
|
|
Toshiba | GP BJT | PNP | Bipolar Small Signal | Si | Dual Common Emitter | 50 | 50 | 2 | 5 | 0.15 | 200 | 120 to 200 | 120@2mA@6V | 0.3@10mA@100mA | Tape and Reel | 5 | USV | SOT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 3SK126-Y(TE85L,F) Trans RF FET N-CH 15V 0.03A 4-Pin(3+Tab) 2-3J1A T/R |
|
Toshiba | HF-MOSFETs | Si | N | Single Dual Gate | Depletion | 1 | 15 | ±9 | 150 | 0.03 | 4.25@6V | 25 | 2.8 | Tape and Reel | 4 | 2-3J1A | No | No | No | No | No | EAR99 |