Toshiba Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Maximum Rate of Rise of Off-State Voltage - (V/us) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Material | Frequency Band | Channel Type | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Current - (mA) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Maximum Reverse Current - (uA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Number of Elements per Chip | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Peak Reverse Current - (uA) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation - (mW) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | RMS On-State Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Repetitive Peak Off-State Current - (mA) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Frequency - (MHz) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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SSM6J412TU,LF
Trans MOSFET P-CH Si 20V 4A 6-Pin UF T/R
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Von 0,0812 € bis 0,0886 €
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Toshiba | MOSFETs | Power MOSFET | Si | P | Single Quad Drain | Enhancement | 1 | 20 | ±8 | 1 | 1000 | 4 | 42.7@4.5V | 12.8@4.5V | 840@10V | Tape and Reel | 6 | UF | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3J353F,LF
Trans MOSFET P-CH Si 30V 2A 3-Pin S-Mini T/R
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Von 0,0582 € bis 0,0636 €
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Toshiba | MOSFETs | Small Signal | Si | P | Single | Enhancement | 1 | 30 | 20 | 2.2 | 600 | 2 | 150@10V | 3.4@4.5V | 159@15V | Tape and Reel | 3 | S-Mini | SOT | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPH2R506PL,L1Q
Trans MOSFET N-CH Si 60V 160A 8-Pin SOP Advance T/R
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Von 0,5395 € bis 0,5846 €
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 60 | ±20 | 2.5 | 3000 | 160 | 2.5@10V | 32@4.5V|60@10V | 60 | 4180@30V | Tape and Reel | 8 | SOP Advance | SO | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK2376(SM,Q)
Trans MOSFET N-CH Si 60V 45A 3-Pin(2+Tab) TO-220SM
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 60 | ±20 | 2 | 100000 | 45 | 17@10V | 110@10V | 110 | 3350@10V | 3 | TO-220SM | TO | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CEZ12V,L3F
Zener Diode Single 12V 5% 30Ohm 300mW 2-Pin ESC T/R
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Von 0,0312 € bis 0,034 €
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Toshiba | Zener | Voltage Regulator | Single | 12 | 5% | 5 | 0.1 | 30 | 300 | 300 | 44(Typ) | Tape and Reel | 2 | ESC | SOD | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SD2131(Q)
Trans Darlington NPN 70V 5A 2000mW 3-Pin(3+Tab) TO-220NIS
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Toshiba | Darlington BJT | NPN | Single | 70 | 70 | 1 | 5 | 7 | 2.5@6mA@3A | 2000 | 1000@5000mA | 1.5@6mA@3A|2.5@20mA@5A | 3 | TO-220NIS | TO | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK5R1P08QM,RQ
Trans MOSFET N-CH Si 80V 84A 3-Pin(2+Tab) DPAK T/R
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Von 0,5979 € bis 0,648 €
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 80 | ±20 | 3.5 | 104000 | 84 | 5.1@10V | 56@10V | 56 | 3980@40V | Tape and Reel | 3 | DPAK | TO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK12J55D(F)
Trans MOSFET N-CH Si 550V 12A 3-Pin(3+Tab) TO-3PN
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 550 | ±30 | 190000 | 12 | 570@10V | 28@10V | 28 | 1550@25V | 3 | TO-3PN | TO | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3K318R,LXGF(T
Trans MOSFET N-CH Si 60V 2.5A 3-Pin SOT-23F T/R Automotive AEC-Q101
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 60 | ±20 | 2000 | 2.5 | 107@10V | 7@10V | 235@30V | 3 | SOT-23F | SOT | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1Z43(Q)
Zener Diode Single 43V 10% 40Ohm 1000mW 2-Pin DO-15
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Toshiba | Zener | Voltage Regulator | Single | 43 | 10% | 7 | 1.2 | 10 | 40 | 1000 | 1000 | 2 | DO-15 | DO | No | Unknown | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6K517NU,LF
Trans MOSFET N-CH Si 30V 6A 6-Pin UDFN-B EP T/R
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0,0888 €
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain | Enhancement | 1 | 30 | -8|12 | 2500 | 6 | 39.1@4.5V | 3.2@4.5V | 310@15V | Tape and Reel | 6 | UDFN-B EP | DFN | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TPH14006NH,L1Q(M
Trans MOSFET N-CH Si 60V 34A 8-Pin SOP Advance T/R
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 60 | ±20 | 4 | 32000 | 34 | 14@10V | 16@10V | 16 | 1000@30V | Tape and Reel | 8 | SOP Advance | SO | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CRG05(TE85L,Q,M)
Diode Si 800V 1A 2-Pin S-FLAT T/R Automotive AEC-Q101
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Toshiba | Gleichrichter | Si | Single | 800 | 1 | 15 | 1.2 | 10 | Tape and Reel | 2 | S-FLAT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CMG08(TE12L,Q)
Diode 600V 1A 2-Pin M-FLAT T/R
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Toshiba | Gleichrichter | Single | 600 | 1 | 30 | 1.1 | 10 | Tape and Reel | 2 | M-FLAT | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA1586-GR,LF
Trans GP BJT PNP 50V 0.15A 200mW 3-Pin USM T/R Automotive AEC-Q101
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Toshiba | GP BJT | PNP | Bipolar Small Signal | Si | Single | 50 | 50 | 1 | 5 | 0.15 | 200 | 200 to 300 | 200@2mA@6V | 0.3@10mA@100mA | 10 | Tape and Reel | 3 | USM | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MT3S20TU(TE85L)
Trans RF BJT NPN 12V 0.08A 900mW 3-Pin UFM T/R
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Toshiba | HF-BJT | NPN | Si | Single | 12 | 20 | 1 | 1.5 | 0.08 | 5V/50mA | 900 | 50 to 120 | 100@50mA@5V | 17.5 | 30 | 7000(Typ) | 2 | Tape and Reel | 3 | UFM | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK20N60W,S1VF
Trans MOSFET N-CH Si 600V 20A 3-Pin(3+Tab) TO-247 Tube
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Von 3,2911 € bis 3,5324 €
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 3.7 | 165000 | 20 | 155@10V | 48@10V | 48 | 1680@300V | Tube | 3 | TO-247 | TO | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CMZ36(TE12L,Q)
Zener Diode Single 36V 10% 30Ohm 2000mW 2-Pin M-FLAT T/R
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Toshiba | Zener | Voltage Regulator | Single | 36 | 10% | 9 | 10 | 30 | 2000 | Tape and Reel | 2 | M-FLAT | No | Unknown | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SV232(TPH2,F)
Varactor Diode Single 30V 28pF 2-Pin USC T/R
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Toshiba | Varaktors | Tuner | Single | 30 | 0.01 | 10 | 2V/25V | 28@2V | Tape and Reel | 2 | USC | SOD | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TJ50S06M3L,LXHQ
Trans MOSFET P-CH Si 60V 50A 3-Pin(2+Tab) DPAK+ T/R Automotive AEC-Q101
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Toshiba | MOSFETs | Power MOSFET | Si | P | Single | Enhancement | 1 | 60 | 10 | 3 | 90000 | 50 | 13.8@10V | 124@10V | 124 | 6290@10V | 10.3@10V|12@6V | Tape and Reel | 3 | DPAK+ | TO | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN1402S,LF(D Transistor Silicon NPN Epitaxial Type |
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Toshiba | Digital-BJT | 3 | S-Mini | SOT | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1Z390(Q)
Zener Diode Single 390V 10% 10000Ohm 1000mW 2-Pin DO-15
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Toshiba | Zener | Voltage Regulator | Single | 390 | 10% | 0.5 | 1.2 | 10 | 10000 | 1000 | 1000 | 2 | DO-15 | DO | No | Unknown | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
HN1B04FE-GR,LF
Trans GP BJT NPN/PNP 50V 0.15A 100mW 6-Pin ES T/R Automotive AEC-Q101
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Von 0,0298 € bis 0,0325 €
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Toshiba | GP BJT | NPN|PNP | Bipolar Small Signal | Si | Dual | 50 | 60@NPN|50@PNP | 2 | 5 | 0.15 | 100 | 200 to 300 | 200@2mA@6V | 0.25@10mA@100mA@NPN|0.3@10mA@100mA@PNP | Tape and Reel | 6 | ES | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK369-V(F)
Trans JFET N-CH 30mA Si 3-Pin TO-92
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Toshiba | JFETs | Si | N | Single | -40 | 400 | 30 | 75 | 10 | 3 | TO-92 | TO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK40S06N1L,LXHQ
Trans MOSFET N-CH Si 60V 40A 3-Pin(2+Tab) DPAK+ T/R Automotive AEC-Q101
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 60 | ±20 | 2.5 | 88200 | 40 | 10.5@10V | 26@10V | 26 | 1650@10V | 8.7@10V|12.3@4.5V | Tape and Reel | 3 | DPAK+ | TO | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 |