Toshiba Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Maximum Rate of Rise of Off-State Voltage - (V/us) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Material | Frequency Band | Channel Type | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Current - (mA) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Maximum Reverse Current - (uA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Number of Elements per Chip | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Peak Reverse Current - (uA) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation - (mW) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | RMS On-State Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Repetitive Peak Off-State Current - (mA) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Frequency - (MHz) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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MT3S20TU(TE85L)
Trans RF BJT NPN 12V 0.08A 900mW 3-Pin UFM T/R
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Toshiba | HF-BJT | NPN | Si | Single | 12 | 20 | 1 | 1.5 | 0.08 | 5V/50mA | 900 | 50 to 120 | 100@50mA@5V | 17.5 | 30 | 7000(Typ) | 2 | Tape and Reel | 3 | UFM | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK20N60W,S1VF
Trans MOSFET N-CH Si 600V 20A 3-Pin(3+Tab) TO-247 Tube
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Von 3,2911 € bis 3,5324 €
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 3.7 | 165000 | 20 | 155@10V | 48@10V | 48 | 1680@300V | Tube | 3 | TO-247 | TO | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CMZ36(TE12L,Q)
Zener Diode Single 36V 10% 30Ohm 2000mW 2-Pin M-FLAT T/R
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Toshiba | Zener | Voltage Regulator | Single | 36 | 10% | 9 | 10 | 30 | 2000 | Tape and Reel | 2 | M-FLAT | No | Unknown | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SV232(TPH2,F)
Varactor Diode Single 30V 28pF 2-Pin USC T/R
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Toshiba | Varaktors | Tuner | Single | 30 | 0.01 | 10 | 2V/25V | 28@2V | Tape and Reel | 2 | USC | SOD | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TJ50S06M3L,LXHQ
Trans MOSFET P-CH Si 60V 50A 3-Pin(2+Tab) DPAK+ T/R Automotive AEC-Q101
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Toshiba | MOSFETs | Power MOSFET | Si | P | Single | Enhancement | 1 | 60 | 10 | 3 | 90000 | 50 | 13.8@10V | 124@10V | 124 | 6290@10V | 10.3@10V|12@6V | Tape and Reel | 3 | DPAK+ | TO | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN1402S,LF(D Transistor Silicon NPN Epitaxial Type |
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Toshiba | Digital-BJT | 3 | S-Mini | SOT | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1Z390(Q)
Zener Diode Single 390V 10% 10000Ohm 1000mW 2-Pin DO-15
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Toshiba | Zener | Voltage Regulator | Single | 390 | 10% | 0.5 | 1.2 | 10 | 10000 | 1000 | 1000 | 2 | DO-15 | DO | No | Unknown | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
HN1B04FE-GR,LF
Trans GP BJT NPN/PNP 50V 0.15A 100mW 6-Pin ES T/R Automotive AEC-Q101
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Von 0,0298 € bis 0,0325 €
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Toshiba | GP BJT | NPN|PNP | Bipolar Small Signal | Si | Dual | 50 | 60@NPN|50@PNP | 2 | 5 | 0.15 | 100 | 200 to 300 | 200@2mA@6V | 0.25@10mA@100mA@NPN|0.3@10mA@100mA@PNP | Tape and Reel | 6 | ES | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK369-V(F)
Trans JFET N-CH 30mA Si 3-Pin TO-92
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Toshiba | JFETs | Si | N | Single | -40 | 400 | 30 | 75 | 10 | 3 | TO-92 | TO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK40S06N1L,LXHQ
Trans MOSFET N-CH Si 60V 40A 3-Pin(2+Tab) DPAK+ T/R Automotive AEC-Q101
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 60 | ±20 | 2.5 | 88200 | 40 | 10.5@10V | 26@10V | 26 | 1650@10V | 8.7@10V|12.3@4.5V | Tape and Reel | 3 | DPAK+ | TO | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK12P50W,RQ
Trans MOSFET N-CH Si 500V 11.5A 3-Pin(2+Tab) DPAK T/R
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Von 1,4054 € bis 1,4504 €
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 500 | ±30 | 100000 | 11.5 | 340@10V | 25@10V | 890@300V | Tape and Reel | 3 | DPAK | TO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA1162-Y,LF
Trans GP BJT PNP 50V 0.15A 200mW 3-Pin S-Mini T/R Automotive AEC-Q101
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Von 0,0162 € bis 0,0177 €
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Toshiba | GP BJT | PNP | Bipolar Small Signal | Si | Single | 50 | 50 | 1 | 5 | 0.15 | 200 | 120 to 200 | 120@2mA@6V | 4 | 0.3@10mA@100mA | 10 | Tape and Reel | 3 | S-Mini | SOT | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK8A25DA,S4X(S
Trans MOSFET N-CH Si 250V 7.5A 3-Pin(3+Tab) TO-220SIS
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 250 | ±20 | 30000 | 7.5 | 500@10V | 16@10V | 550@100V | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3J356R,LF(B
Trans MOSFET P-CH 60V 2A 3-Pin SOT-23F
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Toshiba | MOSFETs | Small Signal | P | Single | Enhancement | 1 | 60 | 10 | 2000 | 2 | 300@10V | 8.3@10V | 330@10V | 3 | SOT-23F | SOT | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MT4S03BU(TE85L,F)
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
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Toshiba | HF-BJT | Tape and Reel | 4 | USQ | SOT | No | No | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC5738 (TE85L,F)
Trans GP BJT NPN 20V 3.5A 625mW 3-Pin TSM T/R
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Toshiba | GP BJT | NPN | Bipolar Power | Si | Single | 20 | 40 | 1 | 7 | 1.1@32mA@1.6A | 3.5 | 625 | 200 to 300|300 to 500 | 400@0.5A@2V|200@1.6A@2V | 0.15@32mA@1.6A | Tape and Reel | 3 | TSM | SOT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK3670(F)
Trans MOSFET N-CH Si 150V 0.67A 3-Pin TO-92 Mod
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 150 | ±12 | 900 | 0.67 | 1700@4V | 4.6@5V | 230@10V | 3 | TO-92 Mod | TO | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK1P90A,LQ(O MOSFETS SILICON N-CHANNEL MOS ( -MOSIV) |
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Toshiba | MOSFETs | Unknown | Unknown | No | Unknown | Unknown | Unknown | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC4116-O(TE85L,F) 0 |
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Toshiba | GP BJT | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TRS6E65F,S1Q
Diode Schottky SiC 650V 6A 2-Pin(2+Tab) TO-220 Tube
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Von 1,4394 € bis 1,5347 €
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Toshiba | Gleichrichter | Schottky Diode | SiC | Single | 650 | 6 | 55 | 1.6 | 30 | Tube | 2 | TO-220 | TO | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SC6100(TE85L)
Trans GP BJT NPN 50V 2.5A 800mW 3-Pin UFM T/R
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Toshiba | GP BJT | NPN | Bipolar Small Signal | Si | Single | 50 | 100 | 1 | 5 | 1.1@20mA@1A | 2.5 | 800 | 200 to 300|300 to 500 | 200@1A@2V|400@0.3A@2V | 0.14@20mA@1A | Tape and Reel | 3 | UFM | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TJ60S04M3L(T6L1,NQ
Trans MOSFET P-CH Si 40V 60A 3-Pin(2+Tab) DPAK+ T/R Automotive AEC-Q101
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Von 0,4639 € bis 0,5028 €
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Toshiba | MOSFETs | Power MOSFET | Si | P | Single | Enhancement | 1 | 40 | 10 | 3 | 90000 | 60 | 6.3@10V | 125@10V | 125 | 6510@10V | Tape and Reel | 3 | DPAK+ | TO | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK20N60W,S1VF(S
Trans MOSFET N-CH Si 600V 20A 3-Pin(3+Tab) TO-247
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 3.7 | 165000 | 20 | 155@10V | 48@10V | 48 | 1680@300V | 3 | TO-247 | TO | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN2310(TE85L,F)
Trans Digital BJT PNP 50V 0.1A 100mW 3-Pin USM T/R
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Toshiba | Digital-BJT | PNP | Single | 50 | 0.1 | 4.7 | 100 | 120@1mA@5V | 0.3@0.25mA@5mA | Tape and Reel | 3 | USM | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPH1R405PL,L1Q
Trans MOSFET N-CH Si 45V 232A 8-Pin SOP Advance T/R
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Von 0,5235 € bis 0,5673 €
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 45 | ±20 | 2.4 | 3000 | 232 | 1.4@10V | 74@10V|36@4.5V | 74 | 4830@22.5V | Tape and Reel | 8 | SOP Advance | SO | No | No | No | No | EAR99 |