Toshiba Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Material | Frequency Band | Channel Type | Repetitive Peak Off-State Current - (mA) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Number of Elements per Chip | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (mA) | Maximum Collector-Base Voltage - (V) | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Continuous DC Collector Current - (A) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Peak On-State Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Rated Average On-State Current - (A) | Maximum Junction Ambient Thermal Resistance | RMS On-State Current - (A) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Maximum Output Power - (W) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
TRS4E65F,S1Q
Diode Schottky SiC 650V 4A 2-Pin(2+Tab) TO-220 Tube
|
Bestand
18
0,7786 €
pro Stück
|
Toshiba | Gleichrichter | Schottky Diode | SiC | Single | 650 | 4 | 39 | 1.6 | 20 | Tube | 2 | TO-220 | TO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SS413,L3M(T
Diode Small Signal Schottky 25V 0.05A 2-Pin SOD-923 T/R
|
Bestand
150
Von 0,0693 € bis 0,1034 €
pro Stück
|
Toshiba | Gleichrichter | Small Signal Schottky Diode | Single | 25 | 0.05 | 1 | 0.55 | 0.5 | 100 | Tape and Reel | 2 | SOD-923 | SOD | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TW045N120C,S1F
Trans MOSFET N-CH SiC 1.2KV 40A 3-Pin(3+Tab) TO-247
|
Bestand
30
12,8021 €
pro Stück
|
Toshiba | MOSFETs | Power MOSFET | SiC | N | Single | Enhancement | 1 | 1200 | 25 | 40 | 59@18V | 57@18V | 182000 | 1969@800V | 3 | TO-247 | TO | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CMZ43(T2L,TEM,Q)
Diode Zener Single 43V 10% 2000mW 2-Pin M-FLAT T/R
|
Bestand
18
0,1068 €
pro Stück
|
Toshiba | Zener | Voltage Regulator | Single | 43 | 10% | 7 | 10 | 40 | 2000 | Tape and Reel | 2 | M-FLAT | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK2R4A08QM,S4X
Trans MOSFET N-CH Si 80V 100A 3-Pin(3+Tab) TO-220SIS Tube
|
Bestand
113
1,0283 €
pro Stück
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 80 | ±20 | 3.5 | 100 | 2.44@10V | 102@6V|179@10V | 179 | 47000 | 13000@40V | Tube | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SS404,H3F(T
Diode Small Signal Schottky Si 25V 0.3A 2-Pin USC T/R
|
Bestand
3.769
Von 0,0386 € bis 0,0858 €
pro Stück
|
Toshiba | Gleichrichter | Small Signal Schottky Diode | Si | Single | 25 | 0.3 | 0.45 | 50 | 46(Typ) | 200 | Tape and Reel | 2 | USC | SOD | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SV279,H3F(T
Varactor Diode Single 15V 14pF 2-Pin ESC T/R
|
Bestand
7.932
Von 0,085 € bis 0,2223 €
pro Stück
|
Toshiba | Varaktors | VCO | UHF|VHF | Single | 15 | 0.003 | 2 | 2V/10V | 14@2V | Tape and Reel | 2 | ESC | SOD | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SS361,LJ(CT
Diode Switching 85V 0.1A 3-Pin SSM T/R
|
Bestand
23
0,106 €
pro Stück
|
Toshiba | Gleichrichter | Switching Diode | Dual Common Cathode | 85 | 0.1 | 2 | 1.2 | 0.5 | 4 | 100 | Tape and Reel | 3 | SSM | No | Unknown | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA2097(TE16L1,NQ)
Trans GP BJT PNP 50V 5A 1000mW 3-Pin(2+Tab) New PW-Mold T/R
|
Bestand
1.643
Von 0,3274 € bis 1,0336 €
pro Stück
|
Toshiba | GP BJT | PNP | Bipolar Power | Si | Single | 50 | 1 | 50 | 7 | 1.1@53mA@1.6A | 5 | 50 to 120|120 to 200|200 to 300 | 200@0.5A@2V|100@1.6A@2V | 1000 | 0.27@53mA@1.6A | Tape and Reel | 3 | New PW-Mold | TO | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPN2R703NL,L1Q
Trans MOSFET N-CH 30V 90A 8-Pin TSON EP Advance T/R
|
Bestand
25.000
0,294 €
pro Stück
|
Toshiba | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 30 | ±20 | 2.3 | 90 | 2.7@10V | 21@10V|9.5@4.5V | 21 | 1900 | 1600@15V | Tape and Reel | 8 | TSON EP Advance | SON | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC3326-B,LF
Trans GP BJT NPN 20V 0.3A 150mW 3-Pin S-Mini T/R Automotive AEC-Q101
|
Bestand
10
Von 0,0188 € bis 0,1334 €
pro Stück
|
Toshiba | GP BJT | NPN | Bipolar Small Signal | Si | Single | 20 | 1 | 50 | 25 | 0.3 | 300 to 500 | 350@4mA@2V | 150 | 0.1@3mA@30mA | 4.8 | 160(Typ) | Tape and Reel | 3 | S-Mini | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
CUZ12V,H3F
Zener Diode Single 12V 5% 30Ohm 600mW 2-Pin USC T/R
|
Bestand
145
0,026 €
pro Stück
|
Toshiba | Zener | Voltage Regulator | Single | 12 | 5% | 5 | 0.1 | 30 | 600 | 44(Typ) | 600 | Tape and Reel | 2 | USC | SOD | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK055U60Z1,RQ(S Trans MOSFET N-CH Si 600V 40A 9-Pin(8+Tab) TOLL |
Bestand
141
Von 2,4058 € bis 3,7347 €
pro Stück
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single Hex Source | Enhancement | 1 | 600 | ±30 | 40 | 55@10V | 65@10V | 270000 | 3680@300V | 9 | TOLL | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
1SV322(TPH3,F)
Diode VAR Cap Single 10V 26.5pF 2-Pin USC T/R
|
Bestand
2.923
0,3552 €
pro Stück
|
Toshiba | Varaktors | TCXO|VCO | Single | 10 | 0.003 | 4 | 1V/4V | 26.5@1V | Tape and Reel | 2 | USC | SOD | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
1SS416,L3M(T
Diode Small Signal Schottky Si 35V 0.1A 2-Pin SOD-923 T/R
|
Bestand
985
Von 0,0479 € bis 0,106 €
pro Stück
|
Toshiba | Gleichrichter | Small Signal Schottky Diode | Si | Single | 35 | 0.1 | 1 | 0.5 | 50 | 15(Typ) | 100 | Tape and Reel | 2 | SOD-923 | SOD | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
CUS05F30,H3F(T
Diode Small Signal Schottky Si 0.5A 2-Pin USC T/R
|
Bestand
1.852
0,70 €
pro Stück
|
Toshiba | Gleichrichter | Small Signal Schottky Diode | Si | Single | 0.5 | 5 | 0.45 | 50 | 120(Typ) | Tape and Reel | 2 | USC | SOD | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6L39TU,LXGF(T
Trans MOSFET N/P-CH Si 20V 1.6A/1.5A 6-Pin UF T/R Automotive AEC-Q101
|
Bestand
3.000
Von 0,1893 € bis 0,5229 €
pro Stück
|
Toshiba | MOSFETs | Small Signal | Si | N|P | Dual | Enhancement | 2 | 20 | ±10@N Channel|±8@P Channel | 1.6@N Channel|1.5@P Channel | 119@4V@N Channel|213@4V@P Channel | 7.5@4V@N Channel|6.4@4V@P Channel | 500 | 260@10V@N Channel|250@10V@P Channel | Tape and Reel | 6 | UF | No | No | Yes | AEC-Q101 | Yes | Unknown | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CRZ12(TE85L,Q,M)
Zener Diode Single 12V 10% 30Ohm 700mW 2-Pin S-FLAT T/R
|
Bestand
114
Von 0,1989 € bis 0,4073 €
pro Stück
|
Toshiba | Zener | Voltage Regulator | Single | 12 | 10% | 10 | 10 | 30 | 700 | 700 | Tape and Reel | 2 | S-FLAT | No | Unknown | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN1910FE,LF(CT
Trans Digital BJT NPN 50V 0.1A 100mW 6-Pin ES T/R
|
Bestand
32.000
0,0326 €
pro Stück
|
Toshiba | Digital-BJT | NPN | Dual | 50 | 4.7 | 0.1 | 120@1mA@5V | 100 | 0.3@0.25mA@5mA | Tape and Reel | 6 | ES | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SS399(TE85L,F)
Diode Switching 420V 0.1A 4-Pin SMQ T/R
|
Bestand
6.185
Von 0,0894 € bis 0,099 €
pro Stück
|
Toshiba | Gleichrichter | Switching Diode | Dual Parallel | 420 | 0.1 | 2 | 1.3 | 0.1 | 500(Typ) | 200 | Tape and Reel | 4 | SMQ | SOT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN1314,LXGF
Trans Digital BJT NPN 50V 0.1A 100mW 3-Pin USM T/R Automotive AEC-Q101
|
Bestand
6.000
0,0102 €
pro Stück
|
Toshiba | Digital-BJT | NPN | Single | 50 | 1 | 0.1 | 0.1 | 50@10mA@5V | 100 | 0.3@0.25mA@5mA | Tape and Reel | 3 | USM | No | Yes | AEC-Q101 | Yes | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TTC005,LZC(O)
Trans GP BJT NPN 285V 1A 1100mW 4-Pin(3+Tab) PW-Mini T/R
|
Bestand
360
Von 0,1642 € bis 0,37 €
pro Stück
|
Toshiba | GP BJT | NPN | Bipolar Power | Si | Single Dual Collector | 285 | 1 | 600 | 8 | 1.3@75mA@0.6A | 1 | 50 to 120 | 80@1mA@5V|100@0.1A@5V|60@0.2A@5V | 1100 | 1@75mA@0.6A | Tape and Reel | 4 | PW-Mini | SOT | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
1SS301,LF
Diode Switching Si 85V 0.1A 3-Pin USM T/R Automotive AEC-Q101
|
Bestand
3
0,014 €
pro Stück
|
Toshiba | Gleichrichter | Switching Diode | Si | Dual Common Cathode | 85 | 0.1 | 2 | 1.2 | 0.5 | 3 | 4 | 200 | Tape and Reel | 3 | USM | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
RN2301,LXGF(T
Trans Digital BJT PNP 50V 100mA 3-Pin USM Automotive AEC-Q101
|
Bestand
2.698
Von 0,0379 € bis 0,1042 €
pro Stück
|
Toshiba | Digital-BJT | 50 | 0.1 | 100 | Tape and Reel | 3 | USM | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK090Z65Z,S1F(O Trans MOSFET N-CH Si 650V 30A 4-Pin(4+Tab) TO-247 |
Bestand
25
Von 4,525 € bis 6,5487 €
pro Stück
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single Dual Source | Enhancement | 1 | 650 | ±30 | 30 | 90@10V | 47@10V | 230000 | 2780@300V | 4 | TO-247 | TO | No | No | No | No |