Toshiba Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Material | Frequency Band | Channel Type | Repetitive Peak Off-State Current - (mA) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Number of Elements per Chip | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (mA) | Maximum Collector-Base Voltage - (V) | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Continuous DC Collector Current - (A) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Peak On-State Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Rated Average On-State Current - (A) | Maximum Junction Ambient Thermal Resistance | RMS On-State Current - (A) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Maximum Output Power - (W) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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TK16J55D(F)
Trans MOSFET N-CH Si 550V 16A 3-Pin(3+Tab) TO-3PN
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Bestand
67
Von 1,0052 € bis 1,6985 €
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 550 | ±30 | 16 | 370@10V | 40@10V | 40 | 250000 | 2300@25V | 3 | TO-3PN | TO | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK10A60W,S4VX
Trans MOSFET N-CH Si 600V 9.7A 3-Pin(3+Tab) TO-220SIS Magazine
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Bestand
20
0,9957 €
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 9.7 | 380@10V | 20@10V | 20 | 30000 | 700@300V | Magazine | 3 | TO-220SIS | TO | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK4R3E06PL,S1X(S
Trans MOSFET N-CH Si 60V 106A 3-Pin(3+Tab) TO-220
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Bestand
15
Von 0,9013 € bis 1,8458 €
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 60 | ±20 | 106 | 4.3@10V | 23.9@4.5V|48.2@10V | 87000 | 3280@30V | 3 | TO-220 | TO | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK090N65Z,S1F(S
Trans MOSFET N-CH Si 650V 30A 3-Pin(3+Tab) TO-247
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Bestand
120
2,3983 €
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 650 | ±30 | 30 | 90@10V | 47@10V | 230000 | 2780@300V | 3 | TO-247 | TO | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CMH04(T2L,TEM,Q)
Diode Switching 200V 1A 2-Pin M-FLAT T/R
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Bestand
186
Von 0,0508 € bis 0,0594 €
pro Stück
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Toshiba | Gleichrichter | Switching Diode | Single | 200 | 1@Ta=26C | 20 | 0.98 | 10 | 35 | Tape and Reel | 2 | M-FLAT | No | Unknown | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK10A60W,S4VX(M
Trans MOSFET N-CH Si 600V 9.7A 3-Pin(3+Tab) TO-220SIS Magazine
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Bestand
35
Von 0,5182 € bis 0,6057 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 9.7 | 380@10V | 20@10V | 30000 | 700@300V | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPN22006NH,LQ(S
Trans MOSFET N-CH Si 60V 21A 8-Pin TSON EP Advance T/R
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Bestand
980
Von 0,1681 € bis 0,4662 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 60 | ±20 | 21 | 22@10V | 12@10V | 12 | 18000 | 710@30V | Tape and Reel | 8 | TSON EP Advance | SON | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SV280,H3F(T
Diode VAR Cap Single 15V 3.8pF 2-Pin ESC T/R
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Bestand
2.119
Von 0,0859 € bis 0,2244 €
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Toshiba | Varaktors | VCO | UHF | Single | 15 | 0.003 | 2 | 2V/10V | 3.8@2V | Tape and Reel | 2 | ESC | SOD | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SS190(TE85L,F)
Diode Switching 85V 0.1A 3-Pin S-Mini T/R Automotive AEC-Q101
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Bestand
1.033
Von 0,0585 € bis 0,1213 €
pro Stück
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Toshiba | Gleichrichter | Switching Diode | Single | 85 | 0.1 | 2 | 1.2@0.1A | 0.5 | 4 | 150 | Tape and Reel | 3 | S-Mini | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK290P60Y,RQ
Trans MOSFET N-CH Si 600V 11.5A 3-Pin(2+Tab) DPAK T/R
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Bestand
3
0,3985 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 4 | 11.5 | 290@10V | 25@10V | 25 | 100000 | 730@300V | Tape and Reel | 3 | DPAK | TO | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK16G60W,RVQ(S
Trans MOSFET N-CH Si 600V 15.8A 3-Pin(2+Tab) D2PAK
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Bestand
1.000
Von 0,8475 € bis 2,4958 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 15.8 | 190@10V | 38@10V | 38 | 130000 | 1350@300V | 3 | D2PAK | TO | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
XPN6R706NC,L1XHQ
Trans MOSFET N-CH Si 60V 40A 8-Pin TSOP Advance(WF) EP T/R Automotive AEC-Q101
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Bestand
9.838
Von 0,3045 € bis 0,3459 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 60 | ±20 | 2.5 | 40 | 6.7@10V | 35@10V | 35 | 2270 | 2000@10V | Tape and Reel | 8 | TSOP Advance(WF) EP | SO | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK7R0E08QM,S1X
Trans MOSFET N-CH Si 80V 64A 3-Pin(3+Tab) TO-220 Tube
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Bestand
150
0,3785 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 80 | ±20 | 3.5 | 64 | 7@10V | 24@6V|39@10V | 39 | 87000 | 2700@40V | U-MOS X-H | Tube | 3 | TO-220 | TO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPCP8003-H(TE85L,F
Trans MOSFET N-CH Si 100V 2.2A 8-Pin PS T/R
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Bestand
1.160
Von 0,1387 € bis 0,182 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 100 | ±20 | 2.2 | 180@10V | 4.5@5V|7.5@10V | 7.5 | 1680 | 360@10V | Tape and Reel | 8 | PS | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TW048N65C,S1F
Trans MOSFET N-CH SiC 650V 40A 3-Pin(3+Tab) TO-247
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Bestand
30
7,5428 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | SiC | N | Single | Enhancement | 1 | 650 | 25 | 40 | 65@18V | 41@18V | 132000 | 1362@400V | 3 | TO-247 | TO | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK9J90E,S1E(S
Trans MOSFET N-CH Si 900V 9A 3-Pin(3+Tab) TO-3PN
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Bestand
25
Von 1,5659 € bis 1,819 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 900 | ±30 | 4 | 9 | 1300@10V | 46@10V | 46 | 250000 | 2000@25V | pi-MOS VIII | 3 | TO-3PN | TO | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC2712-BL,LXGF(T Transistor Silicon NPN Epitaxial PCT Process Audio Frequency General Purpose Amplifier Automotive AEC-Q101 |
Bestand
2.450
0,5078 €
pro Stück
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Toshiba | GP BJT | 3 | S-Mini | SOT | No | Yes | AEC-Q101 | Yes | Unknown | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
HN2S01FU(TE85L,F)
Diode Small Signal Schottky 15V 0.2A 6-Pin US T/R
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Bestand
1.499
Von 0,0946 € bis 0,234 €
pro Stück
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Toshiba | Gleichrichter | Small Signal Schottky Diode | Triple Parallel | 15 | 0.2 | 1 | 0.5@0.1A | 20 | 200 | Tape and Reel | 6 | US | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK1K9A60F,S4X
Trans MOSFET N-CH Si 600V 3.7A 3-Pin(3+Tab) TO-220SIS Tube
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Bestand
19
0,2589 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 3.7 | 1900@10V | 14@10V | 14 | 30000 | 490@300V | Tube | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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HN1A01F-Y(TE85L,F)
Trans GP BJT PNP 50V 0.15A 300mW 6-Pin SM T/R
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Bestand
2.054
Von 0,1655 € bis 0,3206 €
pro Stück
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Toshiba | GP BJT | PNP | Bipolar Small Signal | Si | Dual | 50 | 2 | 50 | 5 | 0.15 | 120 to 200 | 120@2mA@6V | 300 | 0.3@10mA@100mA | Tape and Reel | 6 | SM | SOT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPH8R008NH,L1Q(M
Trans MOSFET N-CH Si 80V 63A 8-Pin SOP Advance T/R
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Bestand
35
Von 0,6014 € bis 0,7479 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 80 | ±20 | 4 | 63 | 8@10V | 35@10V | 35 | 2800 | 2300@40V | Tape and Reel | 8 | SOP Advance | SO | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MUZ8V2,LF
Zener Diode Single 8.2V 6% 30Ohm 600mW 3-Pin USM T/R
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Bestand
5.900
0,0259 €
pro Stück
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Toshiba | Zener | Voltage Regulator | Single | 8.2 | 6% | 5 | 0.1 | 30 | 600 | 67(Typ) | 600 | Tape and Reel | 3 | USM | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3K35AMFV,L3F
Trans MOSFET N-CH Si 20V 0.25A 3-Pin VESM T/R
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Bestand
6.836
Von 0,0189 € bis 0,1471 €
pro Stück
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Toshiba | MOSFETs | Small Signal | Si | N | Single | Enhancement | 1 | 20 | ±10 | 0.25 | 1100@4.5V | 0.62@4.5V | 500 | 18@10V | Tape and Reel | 3 | VESM | SOT | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK14G65W,RQ(S
Trans MOSFET N-CH Si 650V 13.7A 3-Pin(2+Tab) D2PAK T/R
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Bestand
875
Von 1,0399 € bis 2,4351 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 650 | ±30 | 13.7 | 250@10V | 35@10V | 35 | 130000 | 1300@300V | Tape and Reel | 3 | D2PAK | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SC2713-GR,LXGF(T
Silicon NPN Epitaxial Type Automotive AEC-Q101
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Bestand
2.395
Von 0,0536 € bis 0,1265 €
pro Stück
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Toshiba | GP BJT | Tape and Reel | 3 | S-Mini | SOT | No | No | Yes | AEC-Q101 | Yes | No |