Toshiba Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Maximum Rate of Rise of Off-State Voltage - (V/us) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Material | Frequency Band | Channel Type | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Current - (mA) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Maximum Reverse Current - (uA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Number of Elements per Chip | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Peak Reverse Current - (uA) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation - (mW) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | RMS On-State Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Repetitive Peak Off-State Current - (mA) | Maximum Junction Case Thermal Resistance | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Frequency - (MHz) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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2SK3471(TE12L,F)
Trans MOSFET N-CH Si 500V 0.5A 4-Pin(3+Tab) PW-Mini T/R
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Dual Drain | Enhancement | 1 | 500 | ±30 | 1500 | 0.5 | 18000@10V | 3.8@10V | 3.8 | 75@10V | 10000@10V | Tape and Reel | 4 | PW-Mini | SOT | No | Unknown | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TD62104PG(5,J)
Trans Darlington NPN 25V 0.5A 1000mW 16-Pin PDIP
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Toshiba | Darlington BJT | NPN | Array 7 | 25 | 7 | 0.5 | 1000 | 1000@350mA@2V | 2.2@350mA|2@200mA|1.8@100mA | 0.13um | 16 | PDIP | DIP | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPC6110(TE85L,F,M)
Trans MOSFET P-CH Si 30V 4.5A 6-Pin VS T/R
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Toshiba | MOSFETs | Power MOSFET | Si | P | Single Quad Drain | Enhancement | 1 | 30 | 20 | 2 | 2200 | 4.5 | 56@10V | 14@10V | 14 | 510@10V | Tape and Reel | 6 | VS | SOT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TD62164AFG(5)
Trans Darlington NPN 50V 0.7A 1400mW 18-Pin(16+2Tab) HSOP
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Toshiba | Darlington BJT | NPN | Quad | 50 | 4 | 0.7 | 1400 | 2000@500mA@2V | 0.13um | 18 | HSOP | SO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC3072-C(Q)
Trans GP BJT NPN 20V 5A 1000mW 3-Pin(2+Tab) New PW-Mold
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Toshiba | GP BJT | NPN | Bipolar Power | Si | Single | 20 | 50 | 1 | 8 | 5 | 1000 | 300 to 500 | 300@0.5A@2V | 1@0.1A@4A | 3 | New PW-Mold | TO | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CRZ22(TE85L,Q)
Zener Diode Single 22V 10% 30Ohm 700mW 2-Pin S-FLAT T/R
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Toshiba | Zener | Voltage Regulator | Single | 22 | 10% | 10 | 10 | 30 | 700 | 700 | Tape and Reel | 2 | S-FLAT | No | Unknown | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK5A50D(Q)
Trans MOSFET N-CH Si 500V 5A 3-Pin(3+Tab) TO-220SIS
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 500 | ±30 | 35000 | 5 | 1500@10V | 11@10V | 11 | 490@25V | 3 | TO-220SIS | TO | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3K56MFV,L3F(B
Trans MOSFET N-CH Si 20V 0.8A 3-Pin VESM
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Toshiba | MOSFETs | Small Signal | Si | N | Single | Enhancement | 1 | 20 | ±8 | 500 | 0.8 | 235@4.5V | 1@4.5V | 55@10V | 3 | VESM | SOT | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC4738-Y,LF(B
Trans GP BJT NPN 50V 0.15A 120mW 3-Pin SSM Automotive AEC-Q101
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Toshiba | GP BJT | NPN | Bipolar Small Signal | Si | Single | 50 | 60 | 1 | 5 | 0.15 | 120 | 120 to 200 | 120@2mA@6V | 0.25@10mA@100mA | 3 | SSM | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SK3567(Q)
Trans MOSFET N-CH Si 600V 3.5A 3-Pin(3+Tab) TO-220SIS
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 35000 | 3.5 | 2200@10V | 16@10V | 16 | 550@25V | 3 | TO-220SIS | TO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6K403TU,LF(B
Trans MOSFET N-CH Si 20V 4.2A 6-Pin UF
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Toshiba | MOSFETs | Small Signal | Si | N | Single Quad Drain | Enhancement | 1 | 20 | ±10 | 500 | 4.2 | 28@4V | 16.8@4V | 1050@10V | 6 | UF | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN1301(TE85L,F)
Trans Digital BJT NPN 50V 0.1A 100mW 3-Pin USM T/R
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Toshiba | Digital-BJT | NPN | Single | 50 | 0.1 | 4.7 | 1 | 100 | 30@10mA@5V | 0.3@0.25mA@5mA | Tape and Reel | 3 | USM | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK4003(Q)
Trans MOSFET N-CH Si 600V 3A 3-Pin(3+Tab) PW-Mold2
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 20000 | 3 | 2200@10V | 15@10V | 15 | 600@25V | 3 | PW-Mold2 | TO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPN30008NH,LQ
Trans MOSFET N-CH Si 80V 22A 8-Pin TSON Advance T/R
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Von 0,3958 € bis 0,4289 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 80 | ±20 | 4 | 1900 | 22 | 30@10V | 11@10V | 11 | 710@40V | U-MOS VIII-H | Tape and Reel | 8 | TSON Advance | SON | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6N43FU,LF
Trans MOSFET N-CH Si 20V 0.5A 6-Pin US T/R Automotive AEC-Q101
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Von 0,0548 € bis 0,0599 €
pro Stück
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Toshiba | MOSFETs | Small Signal | Si | N | Dual | Enhancement | 2 | 20 | ±10 | 200 | 0.5 | 630@5V | 1.23@4V | 46@10V | Tape and Reel | 6 | US | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN1306,LXHF
Trans Digital BJT NPN 50V 0.1A 100mW 3-Pin USM T/R Automotive AEC-Q101
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Toshiba | Digital-BJT | NPN | Single | 50 | 0.1 | 4.7 | 0.1 | 100 | 80@10mA@5V | 0.3@0.25mA@5mA | Tape and Reel | 3 | USM | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TTA005,L1NQ(O
Trans GP BJT PNP 50V 5A 1200mW 3-Pin(2+Tab) New PW-Mold T/R
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Toshiba | GP BJT | PNP | Bipolar Power | Si | Single | 50 | 50 | 1 | 7 | 1.1@53mA@1.6A | 5 | 1200 | 50 to 120|120 to 200|200 to 300 | 200@0.5A@2V|100@1.6A@2A | 0.27@53mA@1.6A | Tape and Reel | 3 | New PW-Mold | TO | No | No | Yes | Unknown | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK3R3A06PL,S4X
Trans MOSFET N-CH Si 60V 80A 3-Pin(3+Tab) TO-220SIS Tube
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Von 0,911 € bis 0,9781 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 60 | ±20 | 42000 | 80 | 3.3@10V | 35@4.5V|71@10V | 5000@30V | Tube | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK4K1A60F,S4X
Trans MOSFET N-CH Si 600V 2A 3-Pin(3+Tab) TO-220SIS Tube
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Von 0,3222 € bis 0,3492 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 30000 | 2 | 4100@10V | 8@10V | 270@300V | Tube | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CRZ18(TE85L,Q)
Zener Diode Single 18V 10% 30Ohm 700mW 2-Pin S-FLAT T/R
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Toshiba | Zener | Voltage Regulator | Single | 18 | 10% | 10 | 10 | 30 | 700 | 700 | Tape and Reel | 2 | S-FLAT | No | Unknown | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
02DZ5.1-Y(TPH3,F)
Zener Diode Single 5.105V 2.5% 70Ohm 200mW 2-Pin USC T/R
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Toshiba | Zener | Voltage Regulator | Single | 5.105 | 2.5% | 5 | 1 | 70 | 200 | 200 | Tape and Reel | 2 | USC | SOD | No | Unknown | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK17A80W,S4X
Trans MOSFET N-CH Si 800V 17A 3-Pin(3+Tab) TO-220SIS Tube
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Von 2,1373 € bis 2,4197 €
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 800 | ±20 | 45000 | 17 | 290@10V | 32@10V | 32 | 2050@300V | Tube | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SS226,LF
Diode Switching Si 85V 0.1A 3-Pin S-Mini T/R Automotive AEC-Q101
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Von 0,037 € bis 0,0377 €
pro Stück
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Toshiba | Gleichrichter | Switching Diode | Si | Dual Series | 85 | 0.1 | 2 | 1.2 | 0.5 | 150 | 3 | 4 | Tape and Reel | 3 | S-Mini | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK65G10N1,RQ
Trans MOSFET N-CH Si 100V 136A 3-Pin(2+Tab) D2PAK T/R
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 100 | ±20 | 4 | 156000 | 136 | 4.5@10V | 81@10V | 81 | 5400@50V | Tape and Reel | 3 | D2PAK | TO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPCP8105,LF(J Trans MOSFET P-CH Si 20V 7.2A 8-Pin PS |
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Toshiba | MOSFETs | Power MOSFET | Si | P | Single Quad Drain Triple Source | Enhancement | 1 | 20 | ±12 | 1680 | 7.2 | 17@4.5V | 28@5V | 2280@10V | 8 | PS | No | No | No |