Toshiba Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Maximum Rate of Rise of Off-State Voltage - (V/us) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Material | Frequency Band | Channel Type | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Current - (mA) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Maximum Reverse Current - (uA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Number of Elements per Chip | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Peak Reverse Current - (uA) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation - (mW) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | RMS On-State Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Repetitive Peak Off-State Current - (mA) | Maximum Junction Case Thermal Resistance | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Frequency - (MHz) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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SSM3K16CT,L3F(B
Trans MOSFET N-CH Si 20V 0.1A 3-Pin CST
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Toshiba | MOSFETs | Small Signal | Si | N | Single | Enhancement | 1 | 20 | ±10 | 100 | 0.1 | 3000@4V | 9.3@3V | 3 | CST | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6L36TU,LF(B
Trans MOSFET N/P-CH Si 20V 0.5A/0.33A 6-Pin UF
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Toshiba | MOSFETs | Small Signal | Si | N|P | Dual | Enhancement | 2 | 20 | ±10 | 500 | 0.5@N Channel|0.33@P Channel | 630@5V@N Channel|1310@4.5V@P Channel | 1.23@4V@N Channel|1.2@4@P Channel | 46@10V@N Channel|43@10V@P Channel | 6 | UF | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TDTC143Z,LM
Trans Digital BJT NPN 50V 0.1A 320mW 3-Pin SOT-23 T/R
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Von 0,0164 € bis 0,018 €
pro Stück
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Toshiba | Digital-BJT | NPN | Single | 50 | 0.1 | 4.7 | 0.1 | 320 | 80@10mA@5V | Tape and Reel | 3 | SOT-23 | SOT | No | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA1182-Y,LF(T
Trans GP BJT PNP 30V 0.5A 150mW 3-Pin S-Mini T/R Automotive AEC-Q101
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Toshiba | GP BJT | PNP | Bipolar Small Signal | Si | Single | 30 | 35 | 1 | 5 | 0.5 | 150 | 30 to 50|50 to 120|120 to 200 | 120@100mA@1V|40@400mA@6V | 0.25@10mA@100mA | Tape and Reel | 3 | S-Mini | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN1103(TE85L,F)
Trans Digital BJT NPN 50V 0.1A 100mW 3-Pin SSM T/R
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Toshiba | Digital-BJT | NPN | Single | 50 | 0.1 | 22 | 1 | 100 | 70@10mA@5V | 0.3@0.25mA@5mA | Tape and Reel | 3 | SSM | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SJ402(Q) Trans MOSFET P-CH Si 60V 30A 3-Pin(3+Tab) |
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Toshiba | MOSFETs | Power MOSFET | Si | P | Single | Enhancement | 1 | 60 | ±20 | 100000 | 30 | 38@10V | 110@10V | 110 | 3300@10V | 3 | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CMS20I30A(TE12L,Q)
Diode Schottky 30V 2A 2-Pin M-FLAT T/R
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Toshiba | Gleichrichter | 30 | Tape and Reel | 2 | M-FLAT | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPH1R306PL,L1Q
Trans MOSFET N-CH Si 60V 100A 8-Pin SOP Advance T/R
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Von 0,8478 € bis 0,9103 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 60 | ±20 | 3000 | 100 | 1.34@10V | 44@4.5V|91@10V | 6250@30V | Tape and Reel | 8 | SOP Advance | SO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK3473(F)
Trans MOSFET N-CH Si 900V 9A 3-Pin(3+Tab) TO-3PN
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 900 | ±30 | 150000 | 9 | 1600@10V | 38@10V | 38 | 1450@25V | 3 | TO-3PN | TO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TTA005,L1NQ(O
Trans GP BJT PNP 50V 5A 1200mW 3-Pin(2+Tab) New PW-Mold T/R
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Toshiba | GP BJT | PNP | Bipolar Power | Si | Single | 50 | 50 | 1 | 7 | 1.1@53mA@1.6A | 5 | 1200 | 50 to 120|120 to 200|200 to 300 | 200@0.5A@2V|100@1.6A@2A | 0.27@53mA@1.6A | Tape and Reel | 3 | New PW-Mold | TO | No | No | Yes | Unknown | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPW4R50ANH,L1Q
Trans MOSFET N-CH Si 100V 92A 8-Pin DSOP EP Advance
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Von 1,1397 € bis 1,2237 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 100 | ±20 | 4 | 2500 | 92 | 4.5@10V | 58@10V | 58 | 4000@50V | 8 | DSOP EP Advance | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK100E06N1,S1X
Trans MOSFET N-CH Si 60V 263A 3-Pin(3+Tab) TO-220 Magazine
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Von 1,3945 € bis 1,4979 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 60 | ±20 | 4 | 255000 | 263 | 2.3@10V | 140@10V | 140 | 10500@30V | Magazine | 3 | TO-220 | TO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1SS392,LF(T
Diode Small Signal Schottky Si 45V 0.1A 3-Pin S-Mini T/R
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Toshiba | Gleichrichter | Small Signal Schottky Diode | Si | Dual Common Cathode | 45 | 0.1 | 1 | 0.6 | 5@40V | 150 | 25 | Tape and Reel | 3 | S-Mini | SOT | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SS413CT,L3F
Diode Small Signal Schottky Si 25V 0.05A 2-Pin CST T/R
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Von 0,0301 € bis 0,0329 €
pro Stück
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Toshiba | Gleichrichter | Small Signal Schottky Diode | Si | Single | 25 | 0.05 | 1 | 0.55 | 0.5 | 100 | Tape and Reel | 2 | CST | SOD | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN2305(TE85L,F)
Trans Digital BJT PNP 50V 0.1A 100mW 3-Pin USM T/R Automotive AEC-Q101
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Toshiba | Digital-BJT | PNP | Single | 50 | 0.1 | 2.2 | 0.047 | 100 | 80@10mA@5V | 0.3@0.25mA@5mA | Tape and Reel | 3 | USM | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SA2184(TE16L1,NQ)
Trans GP BJT PNP 550V 1A 1000mW 3-Pin(2+Tab) New PW-Mold T/R
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Toshiba | GP BJT | PNP | Bipolar Power | Si | Single | 550 | 550 | 1 | 7 | 1.2@60mA@300mA | 1 | 1000 | 2 to 30|30 to 50|50 to 120 | 80@100mA@5V|5@500mA@5V | 0.7@60mA@300mA | Tape and Reel | 3 | New PW-Mold | TO | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SJ168(TE85L,F)
Trans MOSFET P-CH Si 60V 0.2A 3-Pin S-Mini T/R
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Toshiba | MOSFETs | Small Signal | Si | P | Single | Enhancement | 1 | 60 | ±20 | 3.5 | 200 | 0.2 | 2000@10V | 48 | 73@10V | 1300@10V | Tape and Reel | 3 | S-Mini | SOT | No | Unknown | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SC5458(TE16L1,NQ)
Trans GP BJT NPN 400V 0.8A 3-Pin(2+Tab) New PW-Mold
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Toshiba | GP BJT | NPN | Bipolar Power | Si | Single | 400 | 600 | 1 | 7 | 1.3@0.04A@0.3A | 0.8 | 1000 | 2 to 30|30 to 50 | 20@1mA@5V|30@0.1A@5V | 1@0.04A@0.3A | 3 | New PW-Mold | TO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SC3265-Y(TE85L,F)
Trans GP BJT NPN 25V 0.8A 200mW 3-Pin S-Mini T/R
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Toshiba | GP BJT | NPN | Bipolar Small Signal | Si | Single | 25 | 30 | 1 | 5 | 0.8 | 200 | 120 to 200 | 160@100mA@1V | 0.4@20mA@500mA | Tape and Reel | 3 | S-Mini | SOT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN49A2,LF(CT
Bias resistor built-in transistor (BRT)
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Von 0,0275 € bis 0,03 €
pro Stück
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Toshiba | Digital-BJT | Tape and Reel | 6 | US | No | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TBC847B,LM
Trans GP BJT NPN 50V 0.15A 320mW 3-Pin SOT-23
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Von 0,0115 € bis 0,0167 €
pro Stück
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Toshiba | GP BJT | NPN | Bipolar Small Signal | Si | Single | 50 | 60 | 1 | 6 | 0.7(Typ)@0.5mA@10mA|0.9(Typ)@5mA@100mA | 0.15 | 320 | 200 to 300 | 200@2mA@5V | 3.5(Max) | 0.2@0.5mA@10mA|0.4@5mA@100mA | 10 | 3 | SOT-23 | SOT | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1SS226TE85LF
Diode Switching Si 85V 0.1A 3-Pin S-Mini T/R Automotive AEC-Q101
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Toshiba | Gleichrichter | Switching Diode | Si | Dual Series | 85 | 0.1 | 2 | 1.2 | 0.5 | 150 | 3 | 4 | Tape and Reel | 3 | S-Mini | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CMG02(TE12L,Q,M)
Diode Si 400V 2A 2-Pin M-FLAT T/R Automotive AEC-Q101
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Toshiba | Gleichrichter | Si | Single | 400 | 2 | 80 | 1.1 | 10 | Tape and Reel | 2 | M-FLAT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CMS20(TE12L,Q) Schottky Barrier Diode |
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Toshiba | Gleichrichter | 2 | M-FLAT | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TD62503FG(O)
Trans Digital BJT NPN 35V 0.2A 625mW 16-Pin SOP
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Toshiba | Digital-BJT | NPN | Array 7 | 35 | 0.2 | 2.7 | 0.27 | 625 | 50@10mA@10V | 0.2@10mA|0.8@150mA | 16 | SOP | SO | No | No | No | No | No | EAR99 |