Toshiba Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Material | Frequency Band | Channel Type | Repetitive Peak Off-State Current - (mA) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Number of Elements per Chip | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (mA) | Maximum Collector-Base Voltage - (V) | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Continuous DC Collector Current - (A) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Peak On-State Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Rated Average On-State Current - (A) | Maximum Junction Ambient Thermal Resistance | RMS On-State Current - (A) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Maximum Output Power - (W) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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SSM3K7002BF(T5L,F)
Trans MOSFET N-CH Si 60V 0.2A 3-Pin S-Mini T/R
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Toshiba | MOSFETs | Small Signal | Si | N | Single | Enhancement | 1 | 60 | ±20 | 3.1 | 0.2 | 2100@10V | 200 | 17@25V | Tape and Reel | 3 | S-Mini | SOT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK28V65W,LQ
Trans MOSFET N-CH Si 650V 27.6A 5-Pin DFN EP T/R
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Triple Source | Enhancement | 1 | 650 | ±30 | 27.6 | 120@10V | 75@10V | 240000 | 3000@300V | Tape and Reel | 5 | DFN EP | DFN | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK90S06N1L,LQ
Trans MOSFET N-CH Si 60V 90A 3-Pin(2+Tab) DPAK+ T/R Automotive AEC-Q101
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Von 0,9033 € bis 0,97 €
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 60 | ±20 | 2.5 | 90 | 3.3@10V | 81@10V | 81 | 157000 | 5400@10V | 2.7@10V|3.8@4.5V | Tape and Reel | 3 | DPAK+ | TO | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
GT50J301(Q)
Trans IGBT Chip N-CH 600V 50A 200W 3-Pin(3+Tab) TO-3PL
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Toshiba | IGBT-Chip | N | Single | ±20 | 600 | 50 | 200 | 3 | TO-3PL | TO | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CRZ10(TE85L,Q,M)
Zener Diode Single 10V 10% 30Ohm 700mW 2-Pin S-FLAT T/R
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Von 0,1346 € bis 0,1458 €
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Toshiba | Zener | Voltage Regulator | Single | 10 | 10% | 10 | 10 | 30 | 700 | 700 | Tape and Reel | 2 | S-FLAT | No | Unknown | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3J378R,LF
Trans MOSFET P-CH Si 20V 6A 3-Pin SOT-23F T/R Automotive AEC-Q101
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Von 0,0617 € bis 0,0674 €
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Toshiba | MOSFETs | Power MOSFET | Si | P | Single | Enhancement | 1 | 20 | 6 | 6 | 29.8@4.5V | 12.8@4.5V | 2000 | 840@10V | Tape and Reel | 3 | SOT-23F | SOT | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC5319(TE85L,F)
Trans RF BJT NPN 5V 0.02A 4-Pin USQ T/R
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Toshiba | HF-BJT | NPN | Si | Single | 5 | 1 | 8 | 1.5 | 0.02 | 3V/15mA | 50 to 120 | 50@15mA@3V | 100 | 0.6 | 16000(Typ) | 2.2 | Tape and Reel | 4 | USQ | SOT | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CMZB20(TE12L,Q)
Diode Zener Single 20V 10% 1000mW 2-Pin M-FLAT T/R
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Toshiba | Zener | Voltage Regulator | Single | 20 | 10% | 10 | 10 | 30 | 1000 | Tape and Reel | 2 | M-FLAT | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC4118-Y(TE85L,F)
Trans GP BJT NPN 30V 0.5A 100mW 3-Pin USM T/R
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Toshiba | GP BJT | NPN | Bipolar Small Signal | Si | Single | 30 | 1 | 35 | 5 | 0.5 | 30 to 50|50 to 120|120 to 200 | 120@100mA@1V|40@400mA@6V | 100 | 0.25@10mA@100mA | Tape and Reel | 3 | USM | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK16V60W,LVQ(S
Trans MOSFET N-CH 600V 15.8A 5-Pin DFN EP
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Toshiba | MOSFETs | Power MOSFET | N | Single Triple Source | Enhancement | 1 | 600 | ±30 | 3.7 | 15.8 | 190@10V | 38@10V | 38 | 139000 | 1350@300V | 5 | DFN EP | DFN | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CTS05F40,L3F
Diode Small Signal Schottky Si 0.5A 2-Pin CST T/R
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Von 0,0301 € bis 0,0329 €
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Toshiba | Gleichrichter | Small Signal Schottky Diode | Si | Single | 0.5 | 2 | 0.81 | 15 | 28(Typ) | Tape and Reel | 2 | CST | SOD | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SSM3J378R,LXHF
Trans MOSFET P-CH Si 20V 6A 3-Pin SOT-23F Automotive AEC-Q101
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Toshiba | MOSFETs | Power MOSFET | Si | P | Single | Enhancement | 1 | 20 | 6 | 6 | 29.8@4.5V | 12.8@4.5V | 2000 | 840@10V | 3 | SOT-23F | SOT | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC3072-B(Q)
Trans GP BJT NPN 20V 5A 1000mW 3-Pin(2+Tab) New PW-Mold
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Toshiba | GP BJT | NPN | Bipolar Power | Si | Single | 20 | 1 | 50 | 8 | 5 | 50 to 120 | 70@4A@2V | 1000 | 1@0.1A@4A | 3 | New PW-Mold | TO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK20A60U(Q,M)
Trans MOSFET N-CH Si 600V 20A 3-Pin(3+Tab) TO-220SIS
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 5 | 20 | 190@10V | 27@10V | 27 | 45000 | 1470@10V | 3 | TO-220SIS | TO | No | Unknown | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK11S10N1L,LQ
Trans MOSFET N-CH Si 100V 11A 3-Pin(2+Tab) DPAK+ T/R Automotive AEC-Q101
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Von 0,419 € bis 0,4327 €
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 100 | ±20 | 2.5 | 11 | 28@10V | 15@10V | 15 | 65000 | 850@10V | Tape and Reel | 3 | DPAK+ | TO | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
ULN2803APG,CN
Trans Darlington NPN 50V 0.5A 1470mW 18-Pin PDIP
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Toshiba | Darlington BJT | NPN | Octal Common Emitter | 50 | 8 | 30 | 0.5 | 1000@350mA@2V | 1470 | 1.3@350uA@200mA|1.6@500uA@350mA | 18 | PDIP | DIP | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CUZ5V6,H3F
Zener Diode Single 5.6V 6% 30Ohm 600mW 2-Pin USC T/R
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Von 0,0356 € bis 0,0389 €
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Toshiba | Zener | Voltage Regulator | Single | 5.6 | 6% | 5 | 1 | 30 | 600 | 125(Typ) | 600 | Tape and Reel | 2 | USC | SOD | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC4215-O(TE85R,F) Transistor Silicon NPN Epitaxial Planar Type |
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Toshiba | HF-BJT | 3 | USM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6J771G,LF
Trans MOSFET P-CH Si 20V 5A 6-Pin WCSP-C T/R
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Von 0,3481 € bis 0,3564 €
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Toshiba | MOSFETs | Power MOSFET | Si | P | Single Dual Drain Triple Source | Enhancement | 1 | 20 | ±12 | 1.2 | 5 | 31@8.5V | 9.8@4.5V | 5000 | 870@10V | U-MOS VI | Tape and Reel | 6 | WCSP-C | CSP | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPW4R50ANH,L1Q
Trans MOSFET N-CH Si 100V 92A 8-Pin DSOP EP Advance
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Von 1,1397 € bis 1,2237 €
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 100 | ±20 | 4 | 92 | 4.5@10V | 58@10V | 58 | 2500 | 4000@50V | 8 | DSOP EP Advance | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SJ402(Q) Trans MOSFET P-CH Si 60V 30A 3-Pin(3+Tab) |
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Toshiba | MOSFETs | Power MOSFET | Si | P | Single | Enhancement | 1 | 60 | ±20 | 30 | 38@10V | 110@10V | 110 | 100000 | 3300@10V | 3 | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK16V60W5,LVQ
Trans MOSFET N-CH Si 600V 15.8A 5-Pin DFN EP T/R
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Triple Source | Enhancement | 1 | 600 | ±30 | 15.8 | 245@10V | 43@10V | 43 | 139000 | 1350@300V | Tape and Reel | 5 | DFN EP | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK15A60U(STA4,X,S) Trans MOSFET N-CH Si 600V 15A 3-Pin(3+Tab) TO-220NIS |
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 15 | 300@10V | 17@10V | 40000 | 950@10V | 3 | TO-220NIS | TO | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3J35AFS,LF
Trans MOSFET P-CH Si 20V 0.25A 3-Pin SSM T/R
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Von 0,0261 € bis 0,0284 €
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Toshiba | MOSFETs | Small Signal | Si | P | Single | Enhancement | 1 | 20 | ±10 | 0.25 | 1400@4.5V | 500 | 21@10V | Tape and Reel | 3 | SSM | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6L35FE,LM(B Trans MOSFET N/P-CH Si 20V 0.18A/0.1A 6-Pin ES |
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Toshiba | MOSFETs | Small Signal | Si | N|P | Dual | Enhancement | 2 | 20 | ±10 | 0.18@N Channel|0.1@P Channel | 3000@4V@N Channel|8000@4V@P Channel | 150 | 9.5@3V@N Channel|12.2@3V@P Channel | 6 | ES | No |