Toshiba Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Maximum Rate of Rise of Off-State Voltage - (V/us) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Material | Frequency Band | Channel Type | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Current - (mA) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Maximum Reverse Current - (uA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Number of Elements per Chip | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Peak Reverse Current - (uA) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation - (mW) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | RMS On-State Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Repetitive Peak Off-State Current - (mA) | Maximum Junction Case Thermal Resistance | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Frequency - (MHz) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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| TPW2R508NH,L1Q(M Trans MOSFET N-CH Si 75V 170A 8-Pin DSOP Advance |
Bestand
68
Von 1,2612 € bis 2,436 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 75 | ±20 | 2500 | 170 | 2.5@10V | 72@10V | 4600@37.5V | 8 | DSOP Advance | SO | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6N7002KFU,LF(T
Trans MOSFET N-CH Si 60V 0.3A 6-Pin US T/R Automotive AEC-Q101
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Bestand
9.000
0,0282 €
pro Stück
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Toshiba | MOSFETs | Small Signal | Si | N | Dual | Enhancement | 2 | 60 | ±20 | 2.1 | 500 | 0.3 | 1500@10V | 0.39@4.5V | 26@10V | Tape and Reel | 6 | US | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6J501NU,LF
Trans MOSFET P-CH Si 20V 10A 6-Pin UDFN-B EP T/R
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Bestand
3.036
Von 0,0255 € bis 0,0842 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | P | Single Quad Drain | Enhancement | 1 | 20 | ±8 | 2000 | 10 | 15.3@4.5V | 29.9@4.5V | 2600@10V | Tape and Reel | 6 | UDFN-B EP | DFN | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3K56FS,LF
Trans MOSFET N-CH Si 20V 0.8A 3-Pin SSM T/R
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Bestand
27.000
0,0422 €
pro Stück
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Toshiba | MOSFETs | Small Signal | Si | N | Single | Enhancement | 1 | 20 | ±8 | 1 | 500 | 0.8 | 235@4.5V | 1@4.5V | 55@10V | Tape and Reel | 3 | SSM | No | Unknown | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CRS08(TE85L,Q,M)
Diode Schottky 30V 1.5A 2-Pin S-FLAT T/R
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Bestand
3.000
0,1063 €
pro Stück
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Toshiba | Gleichrichter | Schottky Diode | Single | 30 | 1.5 | 30 | 0.36 | 1000 | 140°C/W | Tape and Reel | 2 | S-FLAT | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3K324R,LF
Trans MOSFET N-CH Si 30V 4A 3-Pin SOT-23F T/R
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Bestand
3.000
Von 0,0472 € bis 0,0733 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 30 | ±12 | 1 | 2000 | 4 | 56@4.5V | 2.2@4.5V | 200@10V | Tape and Reel | 3 | SOT-23F | SOT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SS307(TE85L,F)
Diode 35V 0.1A 3-Pin S-Mini T/R
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Bestand
13
0,2255 €
pro Stück
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Toshiba | Gleichrichter | Single | 35 | 0.1 | 1 | 1.3@0.1A | 0.01 | 150 | Tape and Reel | 3 | S-Mini | SOT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SC4738-GR,LF(T
Trans GP BJT NPN 50V 0.15A 120mW Automotive AEC-Q101 3-Pin SSM T/R
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Bestand
3.092
Von 0,029 € bis 0,0907 €
pro Stück
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Toshiba | GP BJT | NPN | Bipolar Small Signal | Si | Single | 50 | 60 | 1 | 5 | 0.15 | 120 | 200 to 300 | 200@2mA@6V | 0.25@10mA@100mA | Tape and Reel | 3 | SSM | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPH1R204PL,L1Q
Trans MOSFET N-CH Si 40V 246A 8-Pin SOP Advance
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Bestand
578
Von 0,5256 € bis 0,7426 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 40 | ±20 | 156 | 2.4 | 3000 | 246 | 1.24@10V | 34@4.5V|74@10V | 1.13 | 74 | 1300 | 5500@20V | 1@10V|1.5@4.5V | 8 | SOP Advance | SO | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CRS10I60E,LQ(O Schottky Barrier Diode |
Bestand
2.440
Von 0,0665 € bis 0,1736 €
pro Stück
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Toshiba | Gleichrichter | 2 | S-FLAT | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6P15FE(TE85L,F)
Trans MOSFET P-CH Si 30V 0.1A 6-Pin ES T/R Automotive AEC-Q101
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Bestand
10.625
0,0899 €
pro Stück
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Toshiba | MOSFETs | Small Signal | Si | P | Dual | Enhancement | 2 | 30 | ±20 | 150 | 0.1 | 12000@4V | 9.1@3V | Tape and Reel | 6 | ES | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CUS10S30,H3F
Diode Small Signal Schottky Si 30V 1A 2-Pin USC T/R
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Bestand
5.902
Von 0,0509 € bis 0,1811 €
pro Stück
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Toshiba | Gleichrichter | Small Signal Schottky Diode | Si | Single | 30 | 1 | 5 | 0.45 | 500 | 135(Typ) | Tape and Reel | 2 | USC | SOD | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CMS06(TE12L,Q,M)
Diode Schottky 30V 2A 2-Pin M-FLAT T/R
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Bestand
22
0,2358 €
pro Stück
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Toshiba | Gleichrichter | Schottky Diode | Single | 30 | 2 | 40 | 0.37 | 3000 | 135°C/W | Tape and Reel | 2 | M-FLAT | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPC8133,LQ(S
Trans MOSFET P-CH Si 40V 9A 8-Pin SOP T/R
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Bestand
1.162
Von 0,5788 € bis 1,8227 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | P | Single Quad Drain Triple Source | Enhancement | 1 | 40 | 20 | 1900 | 9 | 15@10V | 64@10V | 64 | 2900@10V | Tape and Reel | 8 | SOP | SO | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TJ50S06M3L(T6L1,NQ
Trans MOSFET P-CH Si 60V 50A 3-Pin(2+Tab) DPAK+ T/R Automotive AEC-Q101
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Bestand
10.584
Von 0,695 € bis 0,7094 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | P | Single | Enhancement | 1 | 60 | 10 | 3 | 90000 | 50 | 13.8@10V | 124@10V | 124 | 6290@10V | 10.3@10V|12@6V | Tape and Reel | 3 | DPAK+ | TO | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Meist Gesucht
1SV325,H3F
Varactor Diode Single 10V 44pF 2-Pin ESC T/R
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Von 0,0621 € bis 0,0682 €
pro Stück
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Toshiba | Varaktors | TCXO|Tuner|VCO | Single | 10 | 0.003 | 4 | 1V/4V | 44@1V | Tape and Reel | 2 | ESC | SOD | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK14E65W5,S1X
Trans MOSFET N-CH Si 650V 13.7A 3-Pin(3+Tab) TO-220 Tube
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 650 | ±30 | 130000 | 13.7 | 300@10V | 40 | 1300@300V | Tube | 3 | TO-220 | TO | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPN2R805PL,L1Q
Trans MOSFET N-CH Si 45V 139A 8-Pin TSON Advance
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Von 0,2976 € bis 0,3225 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 45 | ±20 | 2670 | 139 | 2.8@10V | 19@4.5V|39@10V | 39 | 2450@22.5V | 8 | TSON Advance | SON | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TD62083APG(O,N)
Trans Darlington NPN 50V 0.5A 1470mW 18-Pin PDIP
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Toshiba | Darlington BJT | NPN | Octal Common Emitter | 50 | 8 | 0.5 | 30 | 1470 | 500 to 3600 | 1000@350mA@2V | 1.3@200mA|1.6@350mA|1.1@100mA | 18 | PDIP | DIP | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK16J60W,S1VE(S
Trans MOSFET N-CH Si 600V 15.8A 3-Pin(3+Tab) TO-3PN Magazine
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 130000 | 15.8 | 190@10V | 38@10V | 1350@300V | 3 | TO-3PN | TO | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPC6113,LF(CM
Trans MOSFET P-CH Si 20V 5A 6-Pin VS
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Toshiba | MOSFETs | Power MOSFET | Si | P | Single Quad Drain | Enhancement | 1 | 20 | ±12 | 1.2 | 2200 | 5 | 55@4.5V | 10@5V | 690@10V | 6 | VS | SOT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CRF03(T5L,TEMQ)
Diode Switching Si 600V 0.7A 2-Pin S-FLAT T/R
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Toshiba | Gleichrichter | Switching Diode | Si | Single | 600 | 0.7@Ta=76C | 10 | 2 | 50 | 100 | Tape and Reel | 2 | S-FLAT | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK80S06K3L(T6L1,NQ
Trans MOSFET N-CH Si 60V 80A Automotive AEC-Q101 3-Pin(2+Tab) DPAK+ T/R
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 60 | ±20 | 100000 | 80 | 5.5@10V | 85@10V | 85 | 4200@10V | Tape and Reel | 3 | DPAK+ | TO | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK17E65W,S1X(S
Trans MOSFET N-CH Si 650V 17.3A 3-Pin(3+Tab) TO-220 Tube
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 650 | ±30 | 3.5 | 165000 | 17.3 | 200@10V | 45@10V | 45 | 1800@300V | Tube | 3 | TO-220 | TO | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPCP8305,LF(CM
Trans MOSFET P-CH Si 20V 6A 8-Pin PS
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Toshiba | MOSFETs | Power MOSFET | Si | P | Dual | Enhancement | 2 | 20 | ±12 | 1480 | 6 | 30@4.5V | 21.5@5V | 1500@10V | 8 | PS | No | No | No | No | No | EAR99 | No |