Toshiba Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Material | Frequency Band | Channel Type | Repetitive Peak Off-State Current - (mA) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Number of Elements per Chip | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (mA) | Maximum Collector-Base Voltage - (V) | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Continuous DC Collector Current - (A) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Peak On-State Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Rated Average On-State Current - (A) | Maximum Junction Ambient Thermal Resistance | RMS On-State Current - (A) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Maximum Output Power - (W) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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TK10A60W,S4VX
Trans MOSFET N-CH Si 600V 9.7A 3-Pin(3+Tab) TO-220SIS Magazine
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Bestand
20
0,9957 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 9.7 | 380@10V | 20@10V | 20 | 30000 | 700@300V | Magazine | 3 | TO-220SIS | TO | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CRH01(T5L,TEMQ)
Diode Switching 200V 1A 2-Pin S-FLAT T/R
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Bestand
2.011
Von 0,0368 € bis 0,1005 €
pro Stück
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Toshiba | Gleichrichter | Switching Diode | Single | 200 | 1 | 15 | 0.98 | 10 | 35 | Tape and Reel | 2 | S-FLAT | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK380A60Y,S4X
Trans MOSFET N-CH Si 600V 9.7A 3-Pin(3+Tab) TO-220SIS Tube
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Bestand
4
0,3985 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 4 | 9.7 | 380@10V | 20@10V | 20 | 30000 | 590@300V | Tube | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPCP8003-H(TE85L,F
Trans MOSFET N-CH Si 100V 2.2A 8-Pin PS T/R
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Bestand
1.160
Von 0,1387 € bis 0,182 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 100 | ±20 | 2.2 | 180@10V | 4.5@5V|7.5@10V | 7.5 | 1680 | 360@10V | Tape and Reel | 8 | PS | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK1K9A60F,S4X
Trans MOSFET N-CH Si 600V 3.7A 3-Pin(3+Tab) TO-220SIS Tube
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Bestand
19
0,2589 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 3.7 | 1900@10V | 14@10V | 14 | 30000 | 490@300V | Tube | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC2712-BL,LXGF(T Transistor Silicon NPN Epitaxial PCT Process Audio Frequency General Purpose Amplifier Automotive AEC-Q101 |
Bestand
2.450
0,5078 €
pro Stück
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Toshiba | GP BJT | 3 | S-Mini | SOT | No | Yes | AEC-Q101 | Yes | Unknown | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CRS09(T5L,TEMQ)
Diode Schottky 30V 1.5A 2-Pin S-FLAT T/R
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Bestand
318
Von 0,0766 € bis 0,1707 €
pro Stück
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Toshiba | Gleichrichter | Schottky Diode | Single | 30 | 1.5@Ta=84C | 30 | 0.46 | 50 | 140°C/W | Tape and Reel | 2 | S-FLAT | No | Unknown | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN1502(TE85L,F)
Trans Digital BJT NPN 50V 0.1A 300mW 5-Pin SMV T/R
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Bestand
77
Von 0,1049 € bis 0,2002 €
pro Stück
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Toshiba | Digital-BJT | NPN | Dual Common Emitter | 50 | 10 | 1 | 0.1 | 50@10mA@5V | 300 | 0.3@0.25mA@5mA | Tape and Reel | 5 | SMV | SOT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK12A60W,S5VX(J
Trans MOSFET N-CH Si 600V 11.5A 3-Pin(3+Tab) TO-220SIS Tube
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Bestand
21
Von 0,7877 € bis 1,1786 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 3.7 | 11.5 | 300@10V | 25@10V | 25 | 35000 | 890@300V | DTMOSIV | Tube | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
HN2S01FU(TE85L,F)
Diode Small Signal Schottky 15V 0.2A 6-Pin US T/R
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Bestand
1.499
Von 0,0946 € bis 0,234 €
pro Stück
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Toshiba | Gleichrichter | Small Signal Schottky Diode | Triple Parallel | 15 | 0.2 | 1 | 0.5@0.1A | 20 | 200 | Tape and Reel | 6 | US | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK090A65Z,S4X(S
Trans MOSFET N-CH Si 650V 30A 3-Pin(3+Tab) TO-220SIS
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Bestand
4
3,0331 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 650 | ±30 | 30 | 90@10V | 47@10V | 45000 | 2780@300V | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK090N65Z,S1F(S
Trans MOSFET N-CH Si 650V 30A 3-Pin(3+Tab) TO-247
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Bestand
120
2,4031 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 650 | ±30 | 30 | 90@10V | 47@10V | 230000 | 2780@300V | 3 | TO-247 | TO | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK31N60W5,S1VF(S
Trans MOSFET N-CH Si 600V 30.8A 3-Pin(3+Tab) TO-247
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Bestand
30
Von 2,6864 € bis 3,891 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 4.5 | 30.8 | 99@10V | 105@10V | 105 | 230000 | 3000@300V | DTMOSIV | 3 | TO-247 | TO | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPW1500CNH,L1Q(M Trans MOSFET N-CH Si 150V 50A 8-Pin DSOP Advance T/R |
Bestand
5.000
Von 1,1439 € bis 2,6691 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 150 | ±20 | 4 | 50 | 15.4@10V | 22@10V | 22 | 2500 | 1700@75V | Tape and Reel | 8 | DSOP Advance | SO | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPH5900CNH,L1Q(M
Trans MOSFET N-CH Si 150V 18A 8-Pin SOP Advance T/R
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Bestand
7.784
Von 0,3518 € bis 0,591 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 150 | ±20 | 4 | 18 | 59@10V | 7@10V | 7 | 42000 | 460@75V | Tape and Reel | 8 | SOP Advance | SO | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TW048N65C,S1F
Trans MOSFET N-CH SiC 650V 40A 3-Pin(3+Tab) TO-247
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Bestand
30
7,5428 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | SiC | N | Single | Enhancement | 1 | 650 | 25 | 40 | 65@18V | 41@18V | 132000 | 1362@400V | 3 | TO-247 | TO | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN1425TE85LF
Trans Digital BJT NPN 50V 0.8A 200mW 3-Pin S-Mini T/R
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Bestand
5.140
Von 0,1144 € bis 0,4064 €
pro Stück
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Toshiba | Digital-BJT | NPN | Single | 50 | 0.47 | 0.047 | 0.8 | 90@100mA@1V | 200 | 0.25@1mA@50mA|0.25@2mA@50mA | Tape and Reel | 3 | S-Mini | SOT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK9J90E,S1E(S
Trans MOSFET N-CH Si 900V 9A 3-Pin(3+Tab) TO-3PN
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Bestand
25
Von 1,5659 € bis 1,819 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 900 | ±30 | 4 | 9 | 1300@10V | 46@10V | 46 | 250000 | 2000@25V | pi-MOS VIII | 3 | TO-3PN | TO | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK14A65W,S5X(M
Trans MOSFET N-CH Si 650V 13.7A 3-Pin(3+Tab) TO-220SIS Tube
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Bestand
50
Von 1,0312 € bis 2,3311 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 650 | ±30 | 3.5 | 13.7 | 250@10V | 35@10V | 35 | 40000 | 1300@300V | Tube | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK14G65W,RQ(S
Trans MOSFET N-CH Si 650V 13.7A 3-Pin(2+Tab) D2PAK T/R
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Bestand
875
Von 1,0399 € bis 2,4351 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 650 | ±30 | 13.7 | 250@10V | 35@10V | 35 | 130000 | 1300@300V | Tape and Reel | 3 | D2PAK | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TPH5R60APL,L1Q(M
Trans MOSFET N-CH Si 100V 60A 8-Pin SOP Advance
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Bestand
24
Von 0,6551 € bis 1,3346 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 100 | ±20 | 60 | 5.6@10V | 26@4.5V|52@10V | 132000 | 3300@50V | 8 | SOP Advance | SO | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TPCP8505(TE85L,F)
Trans GP BJT NPN 50V 3A 3000mW 8-Pin PS T/R
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Bestand
1.765
Von 0,083 € bis 0,0919 €
pro Stück
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Toshiba | GP BJT | NPN | Bipolar Power | Si | Single Hex Collector | 50 | 1 | 100 | 7 | 1.1@20mA@1A | 3 | 200 to 300|300 to 500 | 200@1A@2V|400@0.3A@2V | 3000 | 0.14@20mA@1A | Tape and Reel | 8 | PS | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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RN1404,LF(T
Trans Digital BJT NPN 50V 0.1A 200mW 3-Pin S-Mini T/R
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Bestand
2.190
Von 0,0262 € bis 0,0825 €
pro Stück
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Toshiba | Digital-BJT | NPN | Single | 50 | 47 | 1 | 0.1 | 80@10mA@5V | 200 | 0.3@0.25mA@5mA | Tape and Reel | 3 | S-Mini | SOT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CMH01(T2L,TEMQ)
Diode Switching 200V 3A 2-Pin M-FLAT T/R
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Bestand
854
Von 0,0945 € bis 0,2487 €
pro Stück
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Toshiba | Gleichrichter | Switching Diode | Single | 200 | 3 | 40 | 0.98 | 10 | 35 | Tape and Reel | 2 | M-FLAT | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK35A08N1,S4X(S
Trans MOSFET N-CH Si 80V 55A 3-Pin(3+Tab) TO-220SIS Magazine
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Bestand
10
Von 0,4853 € bis 0,6482 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 80 | ±20 | 4 | 55 | 12.2@10V | 25@10V | 25 | 30000 | 1700@40V | Magazine | 3 | TO-220SIS | TO | No | No | No | No | No | EAR99 | Yes | Yes |