Toshiba Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Material | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Frequency Band | Channel Type | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Number of Elements per Chip | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Peak On-State Voltage - (V) | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (A) | Maximum Continuous DC Collector Current - (mA) | Maximum Collector-Base Voltage - (V) | Maximum Drain-Gate Voltage - (V) | Typical Input Resistance - (kOhm) | Test Current - (mA) | Rated Average On-State Current - (A) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Power Dissipation - (mW) | Maximum Holding Current - (mA) | Maximum Drain-Source Voltage - (V) | Maximum Continuous Drain Current - (mA) | Maximum Base-Emitter Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum Forward Voltage - (V) | Maximum DC Collector Current - (A) | Peak Reverse Current - (uA) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Maximum Diode Capacitance - (pF) | Repetitive Peak Forward Blocking Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation @ 25C - (mW) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | RMS On-State Current - (A) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Repetitive Peak Off-State Current - (mA) | Maximum Transition Frequency - (MHz) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Frequency - (MHz) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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TPH3R506PL,LQ(S
Trans MOSFET N-CH Si 60V 94A 8-Pin SOP Advance
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Bestand
5.420
Von 0,5079 € bis 1,4944 €
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Toshiba | MOSFETs | Si | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 1800 | 60 | 94 | ±20 | 3.5@10V | 27@4.5V|55@10V | 3400@30V | 8 | SOP Advance | SO | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK30J25D,S1F(O
Trans MOSFET N-CH Si 250V 30A 3-Pin(3+Tab) TO-3PN
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Bestand
1
3,6454 €
pro Stück
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Toshiba | MOSFETs | Si | Power MOSFET | N | Single | Enhancement | 1 | 260000 | 250 | 30 | ±20 | 60@10V | 100@10V | 4300@100V | 3 | TO-3PN | TO | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
XPH4R10ANB,L1XHQ
Trans MOSFET N-CH Si 100V 70A 8-Pin SOP Advance(WF) EP T/R Automotive AEC-Q101
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Bestand
8.855
Von 0,6034 € bis 0,6855 €
pro Stück
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Toshiba | MOSFETs | Si | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 3000 | 100 | 70 | ±20 | 3.5 | 4.1@10V | 75@10V | 75 | 4970@10V | U-MOS VIII-H | Tape and Reel | 8 | SOP Advance(WF) EP | SO | Yes | AEC-Q101 | Yes | Unknown | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
HN2D01FU,LF(T
Diode Switching 85V 0.08A 6-Pin US T/R
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Bestand
1.682
Von 0,0842 € bis 0,2203 €
pro Stück
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Toshiba | Gleichrichter | Switching Diode | Triple Parallel | 85 | 0.08 | 1 | 200 | 1.2@0.1A | 0.5 | 4 | Tape and Reel | 6 | US | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CES520,L3F(T
Diode Small Signal Schottky Si 0.2A 2-Pin ESC T/R
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Bestand
15.500
Von 0,0314 € bis 0,0985 €
pro Stück
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Toshiba | Gleichrichter | Small Signal Schottky Diode | Si | Single | 0.2 | 1 | 150 | 0.6 | 5 | 17(Typ) | Tape and Reel | 2 | ESC | SOD | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SS401(TE85L,F)
Diode Small Signal Schottky 25V 0.3A 3-Pin USM T/R
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Bestand
2.200
Von 0,0802 € bis 0,1538 €
pro Stück
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Toshiba | Gleichrichter | Small Signal Schottky Diode | Single | 25 | 0.3 | 100 | 0.45 | 50 | Tape and Reel | 3 | USM | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN1105,LF(CT
Trans Digital BJT NPN 50V 0.1A 100mW 3-Pin SSM T/R
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Bestand
68
0,1192 €
pro Stück
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Toshiba | Digital-BJT | NPN | Single | 50 | 0.1 | 2.2 | 100 | 0.0468 | 80@10mA@5V | 0.3@0.25mA@5mA | Tape and Reel | 3 | SSM | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK125V65Z,LQ(S
Trans MOSFET N-CH 650V 24A 5-Pin DFN EP
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Bestand
2.500
Von 1,5635 € bis 2,937 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | N | Single Triple Source | Enhancement | 1 | 190000 | 650 | 24 | ±30 | 125@10V | 40@10V | 2250@300V | 5 | DFN EP | DFN | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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HN1B04FU-GR,LF(T
Trans GP BJT NPN/PNP 50V 0.15A 200mW 6-Pin US
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Bestand
2.730
Von 0,0425 € bis 0,061 €
pro Stück
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Toshiba | GP BJT | NPN|PNP | Si | Bipolar Small Signal | Dual | 2 | 50 | 60@NPN|50@PNP | 200 | 5 | 0.15 | 200 to 300 | 200@2mA@6V | 0.25@10mA@100mA@NPN|0.3@10mA@100mA@PNP | 6 | US | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CMS06(TE12L,Q,M)
Diode Schottky 30V 2A 2-Pin M-FLAT T/R
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Bestand
22
0,2358 €
pro Stück
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Toshiba | Gleichrichter | Schottky Diode | Single | 30 | 2 | 40 | 0.37 | 3000 | 135°C/W | Tape and Reel | 2 | M-FLAT | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN1410(TE85L,F)
Trans Digital BJT NPN 50V 0.1A 200mW 3-Pin S-Mini T/R
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Toshiba | Digital-BJT | NPN | Single | 50 | 0.1 | 4.7 | 200 | 120@1mA@5V | 0.3@0.25mA@5mA | Tape and Reel | 3 | S-Mini | SOT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SC5232-B(TE85L,F)
Trans GP BJT NPN 12V 0.5A 150mW 3-Pin S-Mini T/R
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Toshiba | GP BJT | NPN | Si | Bipolar Small Signal | Single | 1 | 12 | 1.2@10mA@200mA | 15 | 150 | 5 | 0.5 | 500 to 3600 | 500@10mA@2V | 0.03@0.5mA@10mA|0.25@10mA@200mA | Tape and Reel | 3 | S-Mini | SOT | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3K341R,LXHF
Trans MOSFET N-CH Si 60V 6A 3-Pin SOT-23F Automotive AEC-Q101
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Toshiba | MOSFETs | Si | Power MOSFET | N | Single | Enhancement | 1 | 2400 | 60 | 6 | ±20 | 36@10V | 9.3@10V | 9.3 | 550@10V | 3 | SOT-23F | SOT | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SK4107(F)
Trans MOSFET N-CH Si 500V 15A 3-Pin(3+Tab) TO-3PN
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Toshiba | MOSFETs | Si | Power MOSFET | N | Single | Enhancement | 1 | 150000 | 500 | 15 | ±30 | 400@10V | 48@10V | 48 | 2450@25V | 3 | TO-3PN | TO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BAS516,L3F(B Diode Switching 100V 0.25A 2-Pin ESC Automotive AEC-Q101 |
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Toshiba | Gleichrichter | 2 | ESC | SOD | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SC2712-GR,LF(B
Trans GP BJT NPN 50V 0.15A 150mW 3-Pin S-Mini Automotive AEC-Q101
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Toshiba | GP BJT | NPN | Si | Bipolar Small Signal | Single | 1 | 50 | 60 | 150 | 5 | 0.15 | 50 to 120 | 70@2mA@6V | 2 | 0.25@10mA@100mA | 10 | 3 | S-Mini | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPN2R805PL,L1Q
Trans MOSFET N-CH Si 45V 139A 8-Pin TSON Advance
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Von 0,2976 € bis 0,3225 €
pro Stück
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Toshiba | MOSFETs | Si | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 2670 | 45 | 139 | ±20 | 2.8@10V | 19@4.5V|39@10V | 39 | 2450@22.5V | 8 | TSON Advance | SON | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SB1457(TPE6,F) Trans Darlington PNP 100V 2A T/R |
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Toshiba | Darlington BJT | PNP | Single | 1 | 100 | 2@1mA@1A | 2 | 2000@1A@2V | Tape and Reel | 3 | TO-92 Mod | TO | Unknown | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK3R1P04PL,RQ(S2
Trans MOSFET N-CH Si 40V 130A 3-Pin(2+Tab) DPAK
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Toshiba | MOSFETs | Si | Power MOSFET | N | Single | Enhancement | 1 | 87000 | 40 | 130 | ±20 | 3.1@10V | 30@4.5V|60@10V | 4670@20V | 3 | DPAK | TO | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK2964(TE12L,F)
Trans MOSFET N-CH Si 30V 2A 4-Pin(3+Tab) PW-Mini T/R
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Toshiba | MOSFETs | Si | Power MOSFET | N | Single Dual Drain | Enhancement | 1 | 1500 | 30 | 2 | ±20 | 180@10V | 5.8@10V | 5.8 | 150@10V | Tape and Reel | 4 | PW-Mini | SOT | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK6P53D(T6RSS-Q)
Trans MOSFET N-CH Si 525V 6A 3-Pin(2+Tab) DPAK T/R
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Von 0,5856 € bis 0,6347 €
pro Stück
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Toshiba | MOSFETs | Si | Power MOSFET | N | Single | Enhancement | 1 | 100000 | 525 | 6 | ±30 | 1300@10V | 12@10V | 12 | 600@25V | Tape and Reel | 3 | DPAK | TO | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3K116TU,LF(B
Trans MOSFET N-CH Si 30V 2.2A 3-Pin UFM
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Toshiba | MOSFETs | Si | Small Signal | N | Single | Enhancement | 1 | 800 | 30 | 2.2 | ±12 | 100@4.5V | 245@10V | 3 | UFM | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SC3138-Y(TE85L,F)
Trans GP BJT NPN 200V 0.05A 150mW 3-Pin S-Mini T/R
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Toshiba | GP BJT | NPN | Si | Bipolar Small Signal | Single | 1 | 200 | 1.5@1mA@10mA | 200 | 150 | 5 | 0.05 | 120 to 200 | 120@10mA@3V | 0.5@1mA@10mA | Tape and Reel | 3 | S-Mini | SOT | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SS362FV,L3F(B
Diode Switching 85V 0.1A 3-Pin VESM
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Toshiba | Gleichrichter | 3 | VESM | SOT | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SK1062(F)
Trans MOSFET N-CH Si 60V 0.2A 3-Pin S-Mini
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Toshiba | MOSFETs | Si | Small Signal | N | Single | Enhancement | 1 | 200 | 60 | 0.2 | ±20 | 3.5 | 1000@10V | 40 | 55@10V | 600@10V | 3 | S-Mini | SOT | No | No | No | No | No | EAR99 | No |