Toshiba Dioden, Transistoren und Thyristoren
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Material | Frequency Band | Channel Type | Repetitive Peak Off-State Current - (mA) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Number of Elements per Chip | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (mA) | Maximum Collector-Base Voltage - (V) | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Continuous DC Collector Current - (A) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Peak On-State Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Rated Average On-State Current - (A) | Maximum Junction Ambient Thermal Resistance | RMS On-State Current - (A) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Maximum Output Power - (W) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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RN2303,LF(T
Trans Digital BJT PNP 50V 0.1A 100mW 3-Pin USM T/R Automotive AEC-Q101
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Bestand
2.130
Von 0,0244 € bis 0,0277 €
pro Stück
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Toshiba | Digital-BJT | PNP | Single | 50 | 22 | 1 | 0.1 | 70@10mA@5V | 100 | 0.3@0.25mA@5mA | Tape and Reel | 3 | USM | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA1736(TE12L,ZC)
Trans GP BJT PNP 50V 3A 1000mW 4-Pin(3+Tab) PW-Mini
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Bestand
895
Von 0,0924 € bis 0,1771 €
pro Stück
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Toshiba | GP BJT | PNP | Bipolar Power | Si | Single Dual Collector | 50 | 1 | 60 | 6 | 1.2@75mA@1.5A | 3 | 30 to 50|50 to 120|120 to 200 | 120@100mA@2V|40@2A@2V | 1000 | 0.5@75mA@1.5A | 4 | PW-Mini | SOT | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC4915-Y,LF(T
Trans RF BJT NPN 30V 0.02A 100mW 3-Pin SSM T/R
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Bestand
5.810
Von 0,0959 € bis 0,2522 €
pro Stück
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Toshiba | HF-BJT | NPN | Si | Single | 30 | 1 | 40 | 4 | 0.02 | 6V/1mA | 50 to 120 | 100@1mA@6V | 100 | 23 | 550(Typ) | 5 | Tape and Reel | 3 | SSM | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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RN1302,LF(T
Trans Digital BJT NPN 50V 0.1A 100mW 3-Pin USM T/R
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Bestand
10
0,0993 €
pro Stück
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Toshiba | Digital-BJT | NPN | Single | 50 | 10 | 1 | 0.1 | 50@10mA@5V | 100 | 0.3@0.25mA@5mA | Tape and Reel | 3 | USM | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC6127(TE16L1,NV)
Trans GP BJT NPN 800V 0.05A 1000mW 3-Pin(2+Tab) New PW-Mold T/R
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Bestand
1.404
Von 0,1952 € bis 0,3749 €
pro Stück
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Toshiba | GP BJT | NPN | Bipolar Power | Si | Single | 800 | 1 | 800 | 5 | 1.5@4mA@20mA | 0.05 | 2 to 30 | 15@7mA@5V | 1000 | 1@4mA@20mA | Tape and Reel | 3 | New PW-Mold | TO | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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RN2303(T5LHIT-J,E)
Trans Digital BJT PNP 50V 0.1A 100mW 3-Pin USM T/R Automotive AEC-Q101
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Bestand
12.000
0,02 €
pro Stück
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Toshiba | Digital-BJT | PNP | Single | 50 | 22 | 1 | 0.1 | 70@10mA@5V | 100 | 0.3@0.25mA@5mA | Tape and Reel | 3 | USM | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK65S04N1L,LQ(O
Trans MOSFET N-CH Si 40V 65A 3-Pin(2+Tab) DPAK+ T/R Automotive AEC-Q101
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Bestand
2.000
0,601 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 40 | ±20 | 2.5 | 65 | 4.3@10V | 39@10V | 39 | 107000 | 2550@10V | 4.9@4.5V|3.3@10V | Tape and Reel | 3 | DPAK+ | TO | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CRS20I40B(TE85L,QM
Diode Schottky 40V 2A 2-Pin S-FLAT T/R
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Bestand
1.865
Von 0,0707 € bis 0,1849 €
pro Stück
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Toshiba | Gleichrichter | Schottky Diode | Single | 40 | 2 | 25 | 0.52 | 100 | 2 | S-FLAT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPN19008QM,LQ(S N-Channel MOSFET |
Bestand
2.431
Von 0,2445 € bis 0,6755 €
pro Stück
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Toshiba | MOSFETs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3K341R,LF(T
Trans MOSFET N-CH Si 60V 6A 3-Pin SOT-23F T/R Automotive AEC-Q101
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 60 | ±20 | 2.5 | 6 | 36@10V | 9.3@10V | 9.3 | 2400 | 550@10V | 43@4V|36@4.5V|28@10V | Tape and Reel | 3 | SOT-23F | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK56E12N1,S1X(S
Trans MOSFET N-CH Si 120V 112A 3-Pin(3+Tab) TO-220 Magazine
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Bestand
61
Von 0,8612 € bis 1,935 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 120 | ±20 | 4 | 112 | 7@10V | 69@10V | 69 | 168000 | 4200@60V | Magazine | 3 | TO-220 | TO | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SA1241-Y(T6L1,NV)
Trans GP BJT PNP 50V 2A 1000mW 3-Pin(2+Tab) New PW-Mold T/R
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Bestand
705
Von 0,1857 € bis 0,355 €
pro Stück
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Toshiba | GP BJT | PNP | Bipolar Power | Si | Single | 50 | 1 | 50 | 5 | 1.2@0.05A@1A | 2 | 120 to 200 | 120@0.5A@2V | 1000 | 0.5@0.05A@1A | Tape and Reel | 3 | New PW-Mold | TO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
HN2D01F(TE85L,F)
Diode Switching 85V 0.08A 6-Pin SM T/R
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Bestand
2.561
Von 0,0816 € bis 0,1063 €
pro Stück
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Toshiba | Gleichrichter | Switching Diode | Triple Parallel | 85 | 0.08 | 1 | 1.2@0.1A | 0.5 | 4 | 300 | Tape and Reel | 6 | SM | SOT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPN2R805PL,L1Q(M MOSFET Silicon N-Channel Mos (U-Mos 4-H) |
Bestand
1.537
Von 0,3628 € bis 0,6056 €
pro Stück
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Toshiba | MOSFETs | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TTB1067B,Q(S Silicon PNP Epitaxial Type |
Bestand
75
Von 0,1831 € bis 0,3758 €
pro Stück
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Toshiba | Darlington BJT | Sack | 3 | TO-126N | No | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6N55NU,LF
Trans MOSFET N-CH 30V 4A 6-Pin UDFN EP T/R Automotive AEC-Q101
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Bestand
469.150
Von 0,0823 € bis 0,0848 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | N | Dual | Enhancement | 2 | 30 | ±20 | 2.5 | 4 | 46@10V | 2.5@4.5V | 2000 | 280@15V | Tape and Reel | 6 | UDFN EP | DFN | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK20A60W,S5VX(M
Trans MOSFET N-CH Si 600V 20A 3-Pin(3+Tab) TO-220SIS
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Bestand
68
Von 1,2266 € bis 2,3756 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 3.7 | 20 | 155@10V | 48@10V | 48 | 45000 | 1680@300V | 3 | TO-220SIS | TO | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CSLZ24V,L3F | 24V ZNR DIODE SOD-962 OVP
Diode Zener Single 24V 6% 400mW 2-Pin SL T/R
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Bestand
10.000
Von 0,0069 € bis 0,0213 €
pro Stück
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Toshiba | Zener | Voltage Regulator | Single | 24 | 6% | 5 | 0.5 | 70 | 400 | 400 | Tape and Reel | 2 | SL | SOD | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA1618-GR(TE85L,F
Trans GP BJT PNP 50V 0.15A 300mW 5-Pin SMV T/R
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Bestand
75
Von 0,0529 € bis 0,0604 €
pro Stück
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Toshiba | GP BJT | PNP | Bipolar Small Signal | Si | Dual Common Emitter | 50 | 2 | 50 | 5 | 0.15 | 200 to 300 | 200@2mA@6V | 300 | 0.3@10mA@100mA | Tape and Reel | 5 | SMV | SOT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6N58NU,LF(T
Trans MOSFET N-CH Si 30V 4A 6-Pin UDFN EP T/R
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Bestand
1.800
Von 0,1918 € bis 0,5304 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Dual | Enhancement | 2 | 30 | ±12 | 1 | 4 | 84@4.5V | 1.8@4.5V | 2000 | 129@15V | Tape and Reel | 6 | UDFN EP | DFN | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6L61NU,LF(T
Trans MOSFET N/P-CH Si 20V 4A 6-Pin UDFN EP T/R
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Bestand
615
Von 0,2125 € bis 0,2782 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N|P | Dual | Enhancement | 2 | 20 | ±8@N Channel|±12@P Channel | 1@N Channel|1.2@P Channel | 4 | 33@4.5V@N Channel|45@10V@P Channel | 3.6@4.5V@N Channel|6.74@4.5V@P Channel | 2000 | 410@10V@N Channel|480@10V@P Channel | Tape and Reel | 6 | UDFN EP | DFN | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPH4R003NL,L1Q(M
Trans MOSFET N-CH Si 30V 68A 8-Pin SOP Advance T/R
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Bestand
5.000
Von 0,2816 € bis 0,7775 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 30 | ±20 | 2.3 | 68 | 4@10V | 6.8@4.5V|14.8@10V | 14.8 | 2800 | 1110@15V | Tape and Reel | 8 | SOP Advance | SO | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3J374R,LF(T
Trans MOSFET P-CH Si 30V 4A 3-Pin SOT-23F T/R
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Bestand
3.000
0,0641 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | P | Single | Enhancement | 1 | 30 | 10 | 4 | 71@10V | 5.9@10V | 2000 | 280@15V | 3 | SOT-23F | SOT | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CUS10I30A(TE85L,QM
Diode Schottky 30V 1A 2-Pin US-FLAT T/R
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Bestand
1.980
0,0606 €
pro Stück
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Toshiba | Gleichrichter | Schottky Diode | Single | 30 | 1 | 20 | 0.39@0.7A | 60 | Tape and Reel | 2 | US-FLAT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SS377(TE85L,F)
Diode Small Signal Schottky 15V 0.1A 3-Pin S-Mini T/R
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Bestand
3.210
Von 0,0581 € bis 0,1374 €
pro Stück
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Toshiba | Gleichrichter | Small Signal Schottky Diode | Dual Common Cathode | 15 | 0.1 | 1 | 0.5 | 20 | 150 | Tape and Reel | 3 | S-Mini | SOT | No | No | No | No | No | EAR99 | No |