Toshiba MOSFETs
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Category | Material | Process Technology | Configuration | Channel Mode | Channel Type | Number of Elements per Chip | Maximum Drain-Source Voltage - (V) | Maximum Gate-Source Voltage - (V) | Maximum Gate Threshold Voltage - (V) | Maximum Continuous Drain Current - (A) | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Typical Gate Charge @ 10V - (nC) | Typical Input Capacitance @ Vds - (pF) | Typical Output Capacitance - (pF) | Maximum Power Dissipation - (mW) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
TK100A06N1,S4X(S
Trans MOSFET N-CH Si 60V 263A 3-Pin(3+Tab) TO-220SIS Magazine
|
Bestand
750
1,6359 €
pro Stück
|
Toshiba | MOSFETs | Power MOSFET | Si | Single | Enhancement | N | 1 | 60 | ±20 | 263 | 2.7@10V | 140@10V | 140 | 10500@30V | 45000 | Magazine | 3 | TO-220SIS | TO | No | No | No | No | No | EAR99 | Yes | Yes | |||||||
SSM6J215FE(TE85L,F
Trans MOSFET P-CH Si 20V 3.4A 6-Pin ES T/R
|
Bestand
4.000
|
Toshiba | MOSFETs | Small Signal | Si | Single Quad Drain | Enhancement | P | 1 | 20 | ±8 | 1 | 3.4 | 59@4.5V | 10.4@4.5V | 630@10V | 500 | Tape and Reel | 6 | ES | No | No | No | No | No | EAR99 | No | |||||||||
TPN4R203NC,L1Q(M
Trans MOSFET N-CH Si 30V 53A 8-Pin TSON EP Advance T/R
|
Bestand
5.000
|
Toshiba | MOSFETs | Power MOSFET | Si | U-MOS VIII | Single Quad Drain Triple Source | Enhancement | N | 1 | 30 | ±20 | 53 | 4.2@10V | 24@10V | 24 | 1370@15V | 22000 | Tape and Reel | 8 | TSON EP Advance | SON | No | No | No | No | EAR99 | No | ||||||||
SSM6K781G,LF(S
Trans MOSFET N-CH Si 12V 7A 6-Pin WCSP-C T/R
|
Bestand
3.000
|
Toshiba | MOSFETs | Power MOSFET | Si | Single Triple Drain Dual Source | Enhancement | N | 1 | 12 | ±8 | 1 | 7 | 18@4.5V | 5.4@4.5V | 600@6V | 2900 | Tape and Reel | 6 | WCSP-C | CSP | No | No | No | No | EAR99 | No | |||||||||
SSM6L12TU,LF(T
Trans MOSFET N/P-CH Si 30V/20V 0.5A 6-Pin UF T/R
|
Bestand
770
|
Toshiba | MOSFETs | Small Signal | Si | Dual | Enhancement | N|P | 2 | 30@N Channel|20@P Channel | ±12 | 0.5 | 145@4.5V@N Channel|260@4V@P Channel | 245@10V@N Channel|218@10V@P Channel | 500 | Tape and Reel | 6 | UF | No | No | No | No | EAR99 | No | ||||||||||||
TPH9R00CQH,LQ(M1
Trans MOSFET N-CH Si 150V 108A 8-Pin SOP Advance T/R
|
Bestand
4.780
|
Toshiba | MOSFETs | Power MOSFET | Si | Single Quad Drain Triple Source | Enhancement | N | 1 | 150 | ±20 | 108 | 9@10V | 36@8V|44@10V | 44 | 3500@75V | 3000 | Tape and Reel | 8 | SOP Advance | SO | No | No | No | No | EAR99 | Yes | Yes | ||||||||
SSM3J132TU,LF(T
Trans MOSFET P-CH Si 12V 5.4A 3-Pin UFM T/R
|
Bestand
748
|
Toshiba | MOSFETs | Small Signal | Si | Single | Enhancement | P | 1 | 12 | ±6 | 5.4 | 17@4.5V | 33@4.5V | 2700@10V | 500 | Tape and Reel | 3 | UFM | No | Yes | No | No | No | No | EAR99 | No | |||||||||
TK7J90E,S1E(S
Trans MOSFET N-CH Si 900V 7A 3-Pin(3+Tab) TO-3PN
|
Bestand
27
|
Toshiba | MOSFETs | Power MOSFET | Si | Single | Enhancement | N | 1 | 900 | ±30 | 7 | 2000@10V | 32@10V | 1350@25V | 200000 | 3 | TO-3PN | TO | No | No | No | EAR99 | No | ||||||||||||
TK170V65Z,LQ(S
Trans MOSFET N-CH 650V 18A 5-Pin DFN EP
|
Bestand
2.400
Von 1,287 € bis 3,009 €
pro Stück
|
Toshiba | MOSFETs | Power MOSFET | Single Triple Source | Enhancement | N | 1 | 650 | ±30 | 18 | 170@10V | 29@10V | 1635@300V | 150000 | 5 | DFN EP | DFN | No | No | No | EAR99 | ||||||||||||||
|
TPN7R506NH,L1Q(M
Trans MOSFET N-CH Si 60V 53A 8-Pin TSON EP Advance T/R
|
Bestand
4.800
|
Toshiba | MOSFETs | Power MOSFET | Si | Single Quad Drain Triple Source | Enhancement | N | 1 | 60 | ±20 | 53 | 7.5@10V | 22@10V | 22 | 1410@30V | 1900 | Tape and Reel | 8 | TSON EP Advance | SON | No | No | No | No | No | EAR99 | No | ||||||||
TK14G65W,RQ(S
Trans MOSFET N-CH Si 650V 13.7A 3-Pin(2+Tab) D2PAK T/R
|
Bestand
875
|
Toshiba | MOSFETs | Power MOSFET | Si | Single | Enhancement | N | 1 | 650 | ±30 | 13.7 | 250@10V | 35@10V | 35 | 1300@300V | 130000 | Tape and Reel | 3 | D2PAK | TO | No | No | No | No | No | EAR99 | Yes | Yes | |||||||
TK7P60W5,RVQ
Trans MOSFET N-CH Si 600V 7A 3-Pin(2+Tab) DPAK T/R
|
Bestand
2.000
0,5254 €
pro Stück
|
Toshiba | MOSFETs | Power MOSFET | Si | Single | Enhancement | N | 1 | 600 | ±30 | 4.5 | 7 | 670@10V | 16@10V | 16 | 490@300V | 60000 | Tape and Reel | 3 | DPAK | TO | No | No | No | No | No | EAR99 | No | |||||||
SSM3K15ACT,L3F(T
Trans MOSFET N-CH Si 30V 0.1A 3-Pin CST T/R
|
Bestand
7.465
|
Toshiba | MOSFETs | Small Signal | Si | Single | Enhancement | N | 1 | 30 | ±20 | 1.5 | 0.1 | 3600@4V | 13.5@3V | 100 | Tape and Reel | 3 | CST | No | No | No | No | No | EAR99 | No | ||||||||||
2SJ305TE85LF
Trans MOSFET P-CH Si 30V 0.2A 3-Pin S-Mini T/R
|
Bestand
5.272
|
Toshiba | MOSFETs | Small Signal | Si | Single | Enhancement | P | 1 | 30 | ±20 | 0.2 | 4000@2.5V | 92@3V | 200 | Tape and Reel | 3 | S-Mini | SOT | No | No | No | No | No | EAR99 | No | ||||||||||
TK7R0E08QM,S1X
Trans MOSFET N-CH Si 80V 64A 3-Pin(3+Tab) TO-220 Tube
|
Bestand
150
0,3877 €
pro Stück
|
Toshiba | MOSFETs | Power MOSFET | Si | U-MOS X-H | Single | Enhancement | N | 1 | 80 | ±20 | 3.5 | 64 | 7@10V | 24@6V|39@10V | 39 | 2700@40V | 87000 | Tube | 3 | TO-220 | TO | No | No | No | No | EAR99 | ||||||||
SSM6K361NU,LF
Trans MOSFET N-CH Si 100V 3.5A 6-Pin UDFN-B EP T/R Automotive AEC-Q101
|
Bestand
6.000
0,1264 €
pro Stück
|
Toshiba | MOSFETs | Power MOSFET | Si | Single Quad Drain | Enhancement | N | 1 | 100 | ±20 | 2.5 | 3.5 | 69@10V | 3.2@4.5V | 430@15V | 160 | 2500 | 51@10V|65@4.5V | Tape and Reel | 6 | UDFN-B EP | DFN | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||
TW048N65C,S1F
Trans MOSFET N-CH SiC 650V 40A 3-Pin(3+Tab) TO-247
|
Bestand
30
10,1959 €
pro Stück
|
Toshiba | MOSFETs | Power MOSFET | SiC | Single | Enhancement | N | 1 | 650 | 25 | 40 | 65@18V | 41@18V | 1362@400V | 132000 | 3 | TO-247 | TO | No | No | No | No | EAR99 | No | |||||||||||
SSM3K16FU,LF
Trans MOSFET N-CH Si 20V 0.1A 3-Pin USM T/R Automotive AEC-Q101
|
Bestand
87
Von 0,0631 € bis 0,1955 €
pro Stück
|
Toshiba | MOSFETs | Small Signal | Si | Single | Enhancement | N | 1 | 20 | ±10 | 0.1 | 3000@4V | 9.3@3V | 150 | Tape and Reel | 3 | USM | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||
TPH6R30ANL,L1Q(M
Trans MOSFET N-CH Si 100V 66A 8-Pin SOP Advance T/R
|
Bestand
1.090
|
Toshiba | MOSFETs | Power MOSFET | Si | Single Quad Drain Triple Source | Enhancement | N | 1 | 100 | ±20 | 66 | 6300@10V | 55@10V|27@4.5V | 3300@50V | 2500 | 8 | SOP Advance | SO | No | No | No | No | EAR99 | Yes | Yes | ||||||||||
TW015Z65C,S1F
Trans MOSFET N-CH SiC 650V 100A 4-Pin(4+Tab) TO-247 Tube
|
Bestand
30
37,2125 €
pro Stück
|
Toshiba | MOSFETs | Power MOSFET | SiC | Single Dual Source | Enhancement | N | 1 | 650 | 25 | 100 | 22@18V | 128@18V | 4850@400V | 342000 | Tube | 4 | TO-247 | TO | No | No | No | EAR99 | No | |||||||||||
TPN11003NL,LQ(S
Trans MOSFET N-CH Si 30V 31A 8-Pin TSON Advance T/R
|
Bestand
1.211
|
Toshiba | MOSFETs | Power MOSFET | Si | Single Quad Drain Triple Source | Enhancement | N | 1 | 30 | ±20 | 2.3 | 31 | 11@10V | 3.3@4.5V|7.5@10V | 7.5 | 510@15V | 19000 | 8 | TSON Advance | SON | Unknown | Unknown | No | No | No | No | EAR99 | No | |||||||
SSM3K37MFV,L3F(T
Trans MOSFET N-CH Si 20V 0.25A 3-Pin VESM T/R
|
Bestand
8.368
|
Toshiba | MOSFETs | Small Signal | Si | Single | Enhancement | N | 1 | 20 | ±10 | 1 | 0.25 | 2200@4.5V | 12@10V | 150 | 3 | VESM | SOT | No | No | No | No | No | EAR99 | No | ||||||||||
|
TPN13008NH,L1Q(M
Trans MOSFET N-CH Si 80V 40A 8-Pin TSON Advance T/R
|
Bestand
3.675
|
Toshiba | MOSFETs | Power MOSFET | Si | Single Quad Drain Triple Source | Enhancement | N | 1 | 80 | ±20 | 4 | 40 | 13.3@10V | 18@10V | 18 | 1230@40V | 1900 | Tape and Reel | 8 | TSON Advance | SON | No | No | No | No | No | EAR99 | Yes | Yes | ||||||
TK16G60W,RVQ(S
Trans MOSFET N-CH Si 600V 15.8A 3-Pin(2+Tab) D2PAK
|
Bestand
1.000
|
Toshiba | MOSFETs | Power MOSFET | Si | Single | Enhancement | N | 1 | 600 | ±30 | 15.8 | 190@10V | 38@10V | 38 | 1350@300V | 130000 | 3 | D2PAK | TO | No | No | No | No | No | EAR99 | No | |||||||||
|
TK9A90E,S4X(S
Trans MOSFET N-CH Si 900V 9A 3-Pin(3+Tab) TO-220SIS Tube
|
Bestand
50
|
Toshiba | MOSFETs | Power MOSFET | Si | Single | Enhancement | N | 1 | 900 | ±30 | 4 | 9 | 1300@10V | 46@10V | 46 | 2000@25V | 50000 | Tube | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | No |