Toshiba FET-Transistoren
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Material | Category | Process Technology | Configuration | Channel Mode | Number of Elements per Chip | Channel Type | Maximum Drain-Gate Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Gate-Source Voltage - (V) | Maximum Gate Threshold Voltage - (V) | Maximum Continuous Drain Current - (A) | Typical Gate Charge @ Vgs - (nC) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Typical Input Capacitance @ Vds - (pF) | Type | Maximum Output Power - (W) | Typical Power Gain - (dB) | Typical Output Capacitance - (pF) | Maximum Frequency - (MHz) | Maximum Drain-Source Resistance - (Ohm) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
SSM6K781G,LF(S
Trans MOSFET N-CH Si 12V 7A 6-Pin WCSP-C T/R
|
Bestand
3.000
|
Toshiba | MOSFETs | Si | Power MOSFET | Single Triple Drain Dual Source | Enhancement | 1 | N | 12 | ±8 | 1 | 7 | 5.4@4.5V | 2900 | 600@6V | 18@4.5V | Tape and Reel | 6 | WCSP-C | CSP | No | No | No | No | EAR99 | No | ||||||||||||||
TPN7R506NH,L1Q(M
Trans MOSFET N-CH Si 60V 53A 8-Pin TSON EP Advance T/R
|
Bestand
4.800
|
Toshiba | MOSFETs | Si | Power MOSFET | Single Quad Drain Triple Source | Enhancement | 1 | N | 60 | ±20 | 53 | 22@10V | 22 | 1900 | 1410@30V | 7.5@10V | Tape and Reel | 8 | TSON EP Advance | SON | No | No | No | No | No | EAR99 | No | |||||||||||||
TK7J90E,S1E(S
Trans MOSFET N-CH Si 900V 7A 3-Pin(3+Tab) TO-3PN
|
Bestand
27
|
Toshiba | MOSFETs | Si | Power MOSFET | Single | Enhancement | 1 | N | 900 | ±30 | 7 | 32@10V | 200000 | 1350@25V | 2000@10V | 3 | TO-3PN | TO | No | No | No | EAR99 | No | |||||||||||||||||
TK170V65Z,LQ(S
Trans MOSFET N-CH 650V 18A 5-Pin DFN EP
|
Bestand
2.400
Von 1,287 € bis 3,009 €
pro Stück
|
Toshiba | MOSFETs | Power MOSFET | Single Triple Source | Enhancement | 1 | N | 650 | ±30 | 18 | 29@10V | 150000 | 1635@300V | 170@10V | 5 | DFN EP | DFN | No | No | No | EAR99 | |||||||||||||||||||
TJ15S06M3L(T6L1,NQ
Trans MOSFET P-CH Si 60V 15A 3-Pin(2+Tab) DPAK+ T/R Automotive AEC-Q101
|
Bestand
1.770
|
Toshiba | MOSFETs | Si | Power MOSFET | Single | Enhancement | 1 | P | 60 | 10 | 3 | 15 | 36@10V | 36 | 41000 | 1770@10V | 50@10V | Tape and Reel | 3 | DPAK+ | TO | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||
TK4R3E06PL,S1X(S
Trans MOSFET N-CH Si 60V 106A 3-Pin(3+Tab) TO-220
|
Bestand
15
|
Toshiba | MOSFETs | Si | Power MOSFET | Single | Enhancement | 1 | N | 60 | ±20 | 106 | 23.9@4.5V|48.2@10V | 87000 | 3280@30V | 4.3@10V | 3 | TO-220 | TO | No | No | No | |||||||||||||||||||
TK7R0E08QM,S1X
Trans MOSFET N-CH Si 80V 64A 3-Pin(3+Tab) TO-220 Tube
|
Bestand
150
0,3877 €
pro Stück
|
Toshiba | MOSFETs | Si | Power MOSFET | U-MOS X-H | Single | Enhancement | 1 | N | 80 | ±20 | 3.5 | 64 | 24@6V|39@10V | 39 | 87000 | 2700@40V | 7@10V | Tube | 3 | TO-220 | TO | No | No | No | No | EAR99 | |||||||||||||
2SJ305TE85LF
Trans MOSFET P-CH Si 30V 0.2A 3-Pin S-Mini T/R
|
Bestand
5.272
|
Toshiba | MOSFETs | Si | Small Signal | Single | Enhancement | 1 | P | 30 | ±20 | 0.2 | 200 | 92@3V | 4000@2.5V | Tape and Reel | 3 | S-Mini | SOT | No | No | No | No | No | EAR99 | No | |||||||||||||||
SSM3K15ACT,L3F(T
Trans MOSFET N-CH Si 30V 0.1A 3-Pin CST T/R
|
Bestand
7.465
|
Toshiba | MOSFETs | Si | Small Signal | Single | Enhancement | 1 | N | 30 | ±20 | 1.5 | 0.1 | 100 | 13.5@3V | 3600@4V | Tape and Reel | 3 | CST | No | No | No | No | No | EAR99 | No | |||||||||||||||
TPH1500CNH1,LQ(M
Trans MOSFET N-CH Si 150V 74A 8-Pin SOP Advance(N) T/R
|
Bestand
4.930
|
Toshiba | MOSFETs | Si | Power MOSFET | Single Quad Drain Triple Source | Enhancement | 1 | N | 150 | ±20 | 74 | 22@10V | 22 | 2500 | 1700@75V | 15.4@10V | Tape and Reel | 8 | SOP Advance(N) | SO | No | No | No | EAR99 | ||||||||||||||||
TK10A60W,S4VX
Trans MOSFET N-CH Si 600V 9.7A 3-Pin(3+Tab) TO-220SIS Magazine
|
Bestand
20
1,0199 €
pro Stück
|
Toshiba | MOSFETs | Si | Power MOSFET | Single | Enhancement | 1 | N | 600 | ±30 | 9.7 | 20@10V | 20 | 30000 | 700@300V | 380@10V | Magazine | 3 | TO-220SIS | TO | No | No | No | No | No | EAR99 | No | |||||||||||||
TW015Z65C,S1F
Trans MOSFET N-CH SiC 650V 100A 4-Pin(4+Tab) TO-247 Tube
|
Bestand
30
37,2125 €
pro Stück
|
Toshiba | MOSFETs | SiC | Power MOSFET | Single Dual Source | Enhancement | 1 | N | 650 | 25 | 100 | 128@18V | 342000 | 4850@400V | 22@18V | Tube | 4 | TO-247 | TO | No | No | No | EAR99 | No | ||||||||||||||||
TPN11003NL,LQ(S
Trans MOSFET N-CH Si 30V 31A 8-Pin TSON Advance T/R
|
Bestand
1.211
|
Toshiba | MOSFETs | Si | Power MOSFET | Single Quad Drain Triple Source | Enhancement | 1 | N | 30 | ±20 | 2.3 | 31 | 3.3@4.5V|7.5@10V | 7.5 | 19000 | 510@15V | 11@10V | 8 | TSON Advance | SON | Unknown | Unknown | No | No | No | No | EAR99 | No | ||||||||||||
|
TK090A65Z,S4X(S
Trans MOSFET N-CH Si 650V 30A 3-Pin(3+Tab) TO-220SIS
|
Bestand
4
|
Toshiba | MOSFETs | Si | Power MOSFET | Single | Enhancement | 1 | N | 650 | ±30 | 30 | 47@10V | 45000 | 2780@300V | 90@10V | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | |||||||||||||||||
TK16G60W,RVQ(S
Trans MOSFET N-CH Si 600V 15.8A 3-Pin(2+Tab) D2PAK
|
Bestand
1.000
|
Toshiba | MOSFETs | Si | Power MOSFET | Single | Enhancement | 1 | N | 600 | ±30 | 15.8 | 38@10V | 38 | 130000 | 1350@300V | 190@10V | 3 | D2PAK | TO | No | No | No | No | No | EAR99 | No | ||||||||||||||
|
TK9A90E,S4X(S
Trans MOSFET N-CH Si 900V 9A 3-Pin(3+Tab) TO-220SIS Tube
|
Bestand
50
|
Toshiba | MOSFETs | Si | Power MOSFET | Single | Enhancement | 1 | N | 900 | ±30 | 4 | 9 | 46@10V | 46 | 50000 | 2000@25V | 1300@10V | Tube | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | No | |||||||||||||
|
TPN8R903NL,LQ
Trans MOSFET N-CH Si 30V 37A 8-Pin TSON Advance T/R
|
Bestand
2.412
Von 0,2422 € bis 0,267 €
pro Stück
|
Toshiba | MOSFETs | Si | Power MOSFET | Single Quad Drain Triple Source | Enhancement | 1 | N | 30 | ±20 | 2.3 | 37 | 4.4@4.5V|9.8@10V | 9.8 | 1900 | 630@15V | 8.9@10V | Tape and Reel | 8 | TSON Advance | SON | No | No | No | No | EAR99 | ||||||||||||||
|
TPN2R203NC,L1Q
Trans MOSFET N-CH Si 30V 100A 8-Pin TSON EP Advance T/R
|
Bestand
235.000
0,1807 €
pro Stück
|
Toshiba | MOSFETs | Si | Power MOSFET | Single Quad Drain Triple Source | Enhancement | 1 | N | 30 | ±20 | 100 | 34@10V | 34 | 1900 | 2230@15V | 2.2@10V | Tape and Reel | 8 | TSON EP Advance | SON | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||
| TK1Q90A(Q) Trans MOSFET N-CH Si 900V 1A 3-Pin(3+Tab) New PW-Mold2 Bag |
Bestand
340
|
Toshiba | MOSFETs | Si | Power MOSFET | Single | Enhancement | 1 | N | 900 | ±30 | 1 | 13@10V | 13 | 20000 | 320@25V | 9000@10V | Bag | 3 | New PW-Mold2 | No | No | No | No | No | EAR99 | No | ||||||||||||||
SSM6N44FE,LM
Trans MOSFET N-CH Si 30V 0.1A 6-Pin ES T/R Automotive AEC-Q101
|
Bestand
4.000
Von 0,0432 € bis 0,2967 €
pro Stück
|
Toshiba | MOSFETs | Si | Small Signal | Dual | Enhancement | 2 | N | 30 | ±10@N Channel|±8@P Channel | 1.5 | 0.1 | 1.23@4V@N Channel|1.2@4V@P Channel | 150 | 8.5@3V | 4000@4V | Tape and Reel | 6 | ES | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||
|
TK10A60W,S4VX(M
Trans MOSFET N-CH Si 600V 9.7A 3-Pin(3+Tab) TO-220SIS Magazine
|
Bestand
35
|
Toshiba | MOSFETs | Si | Power MOSFET | Single | Enhancement | 1 | N | 600 | ±30 | 9.7 | 20@10V | 30000 | 700@300V | 380@10V | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | |||||||||||||||||
XPN6R706NC,L1XHQ
Trans MOSFET N-CH Si 60V 40A 8-Pin TSOP Advance(WF) EP T/R Automotive AEC-Q101
|
Bestand
9.838
Von 0,3119 € bis 0,3205 €
pro Stück
|
Toshiba | MOSFETs | Si | Power MOSFET | Single Quad Drain Triple Source | Enhancement | 1 | N | 60 | ±20 | 2.5 | 40 | 35@10V | 35 | 2270 | 2000@10V | 6.7@10V | Tape and Reel | 8 | TSOP Advance(WF) EP | SO | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | |||||||||||||
TK090N65Z,S1F(S
Trans MOSFET N-CH Si 650V 30A 3-Pin(3+Tab) TO-247
|
Bestand
120
2,4031 €
pro Stück
|
Toshiba | MOSFETs | Si | Power MOSFET | Single | Enhancement | 1 | N | 650 | ±30 | 30 | 47@10V | 230000 | 2780@300V | 90@10V | 3 | TO-247 | TO | No | No | No | No | EAR99 | No | ||||||||||||||||
TPH6R30ANL,L1Q(M
Trans MOSFET N-CH Si 100V 66A 8-Pin SOP Advance T/R
|
Bestand
1.090
|
Toshiba | MOSFETs | Si | Power MOSFET | Single Quad Drain Triple Source | Enhancement | 1 | N | 100 | ±20 | 66 | 55@10V|27@4.5V | 2500 | 3300@50V | 6300@10V | 8 | SOP Advance | SO | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||
SSM3K37MFV,L3F(T
Trans MOSFET N-CH Si 20V 0.25A 3-Pin VESM T/R
|
Bestand
8.368
|
Toshiba | MOSFETs | Si | Small Signal | Single | Enhancement | 1 | N | 20 | ±10 | 1 | 0.25 | 150 | 12@10V | 2200@4.5V | 3 | VESM | SOT | No | No | No | No | No | EAR99 | No |