Toshiba Dioden, Transistoren und Thyristoren
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Material | Channel Type | Configuration | Channel Mode | Typical Zener Voltage - (V) | Repetitive Peak Reverse Voltage - (V) | Process Technology | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Maximum Gate Trigger Current - (mA) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Zener Voltage Tolerance | Maximum Reverse Current - (uA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Surge Current Rating - (A) | Number of Elements per Chip | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Forward Voltage - (V) | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Voltage - (V) | Typical Resistor Ratio | RMS On-State Current - (A) | Peak Reverse Current - (uA) | Maximum Reverse Leakage Current - (uA) | Maximum Gate Peak Inverse Voltage - (V) | Maximum Gate-Source Voltage - (V) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Repetitive Peak Off-State Current - (mA) | Maximum Junction Ambient Thermal Resistance | Frequency Band | Typical Input Capacitance @ Vds - (pF) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Transition Frequency - (MHz) | Maximum Power Dissipation - (mW) | Maximum Output Power - (W) | Typical Power Gain - (dB) | Typical Output Capacitance - (pF) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Frequency - (MHz) | Typical 3rd Order Intercept Point - (dBm) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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TK58E06N1,S1X(S
Trans MOSFET N-CH Si 60V 105A 3-Pin(3+Tab) TO-220 Magazine
|
Bestand
49
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 60 | ±20 | 4 | 105 | 5.4@10V | 46@10V | 3400@30V | 46 | 110000 | Magazine | 3 | TO-220 | TO | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3K37CT,L3F(T
Trans MOSFET N-CH Si 20V 0.2A 3-Pin CST T/R
|
Bestand
9.620
|
Toshiba | MOSFETs | Small Signal | Si | N | Single | Enhancement | 1 | 20 | ±10 | 0.2 | 2200@4.5V | 12@10V | 100 | Tape and Reel | 3 | CST | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3K44MFV,L3XGF(T
Trans MOSFET N-CH Si 30V 0.1A 3-Pin VESM T/R Automotive AEC-Q101
|
Bestand
8.000
Von 0,061 € bis 0,1438 €
pro Stück
|
Toshiba | MOSFETs | Small Signal | Si | N | Single | Enhancement | 1 | 30 | ±20 | 0.1 | 4000@4V | 8.5@3V | 150 | Tape and Reel | 3 | VESM | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN4987,LF(CT
Trans Digital BJT NPN/PNP 50V 0.1A 200mW 6-Pin US T/R
|
Bestand
3.000
|
Toshiba | Digital-BJT | NPN|PNP | Dual | 50 | 0.1 | 10 | 0.213 | 80@10mA@5V | 200 | 0.3@0.25mA@5mA | Tape and Reel | 6 | US | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
HN4C06J-GR(TE85L,F
Trans GP BJT NPN 120V 0.1A 300mW 5-Pin SMV T/R
|
Bestand
5
|
Toshiba | GP BJT | NPN | Bipolar Small Signal | Si | Dual Common Emitter | 120 | 120 | 2 | 5 | 0.1 | 200 to 300 | 200@2mA@6V | 300 | 0.3@1mA@10mA | Tape and Reel | 5 | SMV | SOT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6J412TU,LF(T
Trans MOSFET P-CH Si 20V 4A 6-Pin UF T/R
|
Bestand
2.475
|
Toshiba | MOSFETs | Power MOSFET | Si | P | Single Quad Drain | Enhancement | 1 | 20 | ±8 | 1 | 4 | 42.7@4.5V | 12.8@4.5V | 840@10V | 1000 | Tape and Reel | 6 | UF | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN1404,LF(T
Trans Digital BJT NPN 50V 0.1A 200mW 3-Pin S-Mini T/R
|
Bestand
2.190
|
Toshiba | Digital-BJT | NPN | Single | 50 | 0.1 | 47 | 1 | 80@10mA@5V | 200 | 0.3@0.25mA@5mA | Tape and Reel | 3 | S-Mini | SOT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPN7R506NH,L1Q(M
Trans MOSFET N-CH Si 60V 53A 8-Pin TSON EP Advance T/R
|
Bestand
4.800
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 60 | ±20 | 53 | 7.5@10V | 22@10V | 1410@30V | 22 | 1900 | Tape and Reel | 8 | TSON EP Advance | SON | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
TK40E10N1,S1X(S
Trans MOSFET N-CH Si 100V 40A 3-Pin(3+Tab) TO-220 Magazine
|
Bestand
103
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 100 | ±20 | 4 | 40 | 8.2@10V | 49@10V | 3000@50V | 49 | 126000 | Magazine | 3 | TO-220 | TO | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CMH04(T2L,TEM,Q)
Diode Switching 200V 1A 2-Pin M-FLAT T/R
|
Bestand
1.019
|
Toshiba | Gleichrichter | Switching Diode | Single | 200 | 1@Ta=26C | 0.98 | 20 | 10 | 35 | Tape and Reel | 2 | M-FLAT | No | Unknown | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
TK4R3E06PL,S1X(S
Trans MOSFET N-CH Si 60V 106A 3-Pin(3+Tab) TO-220
|
Bestand
15
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 60 | ±20 | 106 | 4.3@10V | 23.9@4.5V|48.2@10V | 3280@30V | 87000 | 3 | TO-220 | TO | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TJ15S06M3L(T6L1,NQ
Trans MOSFET P-CH Si 60V 15A 3-Pin(2+Tab) DPAK+ T/R Automotive AEC-Q101
|
Bestand
1.770
|
Toshiba | MOSFETs | Power MOSFET | Si | P | Single | Enhancement | 1 | 60 | 10 | 3 | 15 | 50@10V | 36@10V | 1770@10V | 36 | 41000 | Tape and Reel | 3 | DPAK+ | TO | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK3564,S5Q(J Trans MOSFET N-CH Si 900V 3A 3-Pin(3+Tab) TO-220NIS |
Bestand
1
1,0918 €
pro Stück
|
Toshiba | MOSFETs | 3 | TO-220NIS | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SK208-Y(TE85L,F)
Trans JFET N-CH Si 3-Pin S-Mini T/R
|
Bestand
1.633
|
Toshiba | JFETs | Si | N | Single | 1 | -50 | 8.2 | 100 | 0.5(Typ) | Tape and Reel | 3 | S-Mini | SOT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SS427,L3M(T
Diode Switching Si 85V 0.2A 2-Pin SOD-923 T/R
|
Bestand
50.000
0,0211 €
pro Stück
|
Toshiba | Gleichrichter | Switching Diode | Si | Single | 85 | 0.2 | 1.2@0.1A | 1 | 0.5@80V | 0.3(Typ) | 1600(Typ) | 150 | Tape and Reel | 2 | SOD-923 | SOD | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
TPCC8104,L1Q(CM
Trans MOSFET P-CH Si 30V 20A 8-Pin TSON EP Advance T/R
|
Bestand
2.013
|
Toshiba | MOSFETs | Power MOSFET | Si | P | Single Quad Drain Triple Source | Enhancement | 1 | 30 | 20 | 20 | 8.8@10V | 58@10V | 2260@10V | 1900 | Tape and Reel | 8 | TSON EP Advance | SON | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
RN1425TE85LF
Trans Digital BJT NPN 50V 0.8A 200mW 3-Pin S-Mini T/R
|
Bestand
5.140
|
Toshiba | Digital-BJT | NPN | Single | 50 | 0.8 | 0.47 | 0.047 | 90@100mA@1V | 200 | 0.25@2mA@50mA|0.25@1mA@50mA | Tape and Reel | 3 | S-Mini | SOT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6K361NU,LF
Trans MOSFET N-CH Si 100V 3.5A 6-Pin UDFN-B EP T/R Automotive AEC-Q101
|
Bestand
6.000
0,1264 €
pro Stück
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain | Enhancement | 1 | 100 | ±20 | 2.5 | 3.5 | 69@10V | 3.2@4.5V | 430@15V | 2500 | 160 | 51@10V|65@4.5V | Tape and Reel | 6 | UDFN-B EP | DFN | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TW048N65C,S1F
Trans MOSFET N-CH SiC 650V 40A 3-Pin(3+Tab) TO-247
|
Bestand
30
10,1959 €
pro Stück
|
Toshiba | MOSFETs | Power MOSFET | SiC | N | Single | Enhancement | 1 | 650 | 25 | 40 | 65@18V | 41@18V | 1362@400V | 132000 | 3 | TO-247 | TO | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CUZ20V,H3F
Zener Diode Single 20V 6% 70Ohm 600mW 2-Pin USC T/R
|
Bestand
3.910
0,0265 €
pro Stück
|
Toshiba | Zener | Voltage Regulator | Single | 20 | 6% | 5 | 0.1 | 70 | 600 | 29(Typ) | 600 | Tape and Reel | 2 | USC | SOD | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
TPN22006NH,LQ(S
Trans MOSFET N-CH Si 60V 21A 8-Pin TSON EP Advance T/R
|
Bestand
1.980
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 60 | ±20 | 21 | 22@10V | 12@10V | 710@30V | 12 | 18000 | Tape and Reel | 8 | TSON EP Advance | SON | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6N813R,LF
Trans MOSFET N-CH Si 100V 3.5A 6-Pin TSOP-F T/R Automotive AEC-Q101
|
Bestand
1.293
0,1224 €
pro Stück
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Dual | Enhancement | 2 | 100 | ±20 | 3.5 | 112@10V | 3.6@4.5V | 242@15V | 2500 | Tape and Reel | 6 | TSOP-F | SO | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK110U65Z,RQ
Trans MOSFET N-CH Si 650V 24A 9-Pin(8+Tab) TOLL T/R
|
Bestand
1.960
1,5098 €
pro Stück
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single Hex Source | Enhancement | DTMOSVI | 1 | 650 | ±30 | 4 | 24 | 110@10V | 40@10V | 2250@300V | 40 | 190000 | Tape and Reel | 9 | TOLL | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK7R4A15Q5,S4X
Silicon N-channel MOSFET
|
Bestand
394
Von 1,7743 € bis 1,9217 €
pro Stück
|
Toshiba | MOSFETs | 3 | TO-220SIS | TO | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK100A06N1,S4X(S
Trans MOSFET N-CH Si 60V 263A 3-Pin(3+Tab) TO-220SIS Magazine
|
Bestand
750
1,6359 €
pro Stück
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 60 | ±20 | 263 | 2.7@10V | 140@10V | 10500@30V | 140 | 45000 | Magazine | 3 | TO-220SIS | TO | No | No | No | No | No | EAR99 | Yes | Yes |