Toshiba Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Material | Frequency Band | Channel Type | Repetitive Peak Off-State Current - (mA) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Number of Elements per Chip | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (mA) | Maximum Collector-Base Voltage - (V) | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Continuous DC Collector Current - (A) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Peak On-State Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Rated Average On-State Current - (A) | Maximum Junction Ambient Thermal Resistance | RMS On-State Current - (A) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Maximum Output Power - (W) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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TPCP8003-H(TE85L,F
Trans MOSFET N-CH Si 100V 2.2A 8-Pin PS T/R
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Bestand
1.160
Von 0,1395 € bis 0,1828 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 100 | ±20 | 2.2 | 180@10V | 4.5@5V|7.5@10V | 7.5 | 1680 | 360@10V | Tape and Reel | 8 | PS | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK1Q90A(Q) Trans MOSFET N-CH Si 900V 1A 3-Pin(3+Tab) New PW-Mold2 Bag |
Bestand
340
0,9705 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 900 | ±30 | 1 | 9000@10V | 13@10V | 13 | 20000 | 320@25V | Bag | 3 | New PW-Mold2 | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPN2R203NC,L1Q
Trans MOSFET N-CH Si 30V 100A 8-Pin TSON EP Advance T/R
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Bestand
235.000
0,1764 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 30 | ±20 | 100 | 2.2@10V | 34@10V | 34 | 1900 | 2230@15V | Tape and Reel | 8 | TSON EP Advance | SON | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
GT15J341,S4X(S
Trans IGBT Chip N-CH 600V 15A 30W 3-Pin(3+Tab) TO-220SIS Magazine
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Bestand
50
Von 1,0051 € bis 1,6897 €
pro Stück
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Toshiba | IGBT-Chip | N | Single | ±25 | 600 | 15 | 30 | Magazine | 3 | TO-220SIS | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6N44FE,LM
Trans MOSFET N-CH Si 30V 0.1A 6-Pin ES T/R Automotive AEC-Q101
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Bestand
4.000
Von 0,0422 € bis 0,2901 €
pro Stück
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Toshiba | MOSFETs | Small Signal | Si | N | Dual | Enhancement | 2 | 30 | ±10@N Channel|±8@P Channel | 1.5 | 0.1 | 4000@4V | 1.23@4V@N Channel|1.2@4V@P Channel | 150 | 8.5@3V | Tape and Reel | 6 | ES | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TTC015B,Q(S)
Trans GP BJT NPN 80V 2A 1500mW 3-Pin TO-126N Sack
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Bestand
39
0,3501 €
pro Stück
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Toshiba | GP BJT | NPN | Bipolar Power | Si | Single | 80 | 1 | 160 | 7 | 1.5@100mA@1A | 2 | 50 to 120 | 80@1mA@2V|100@0.5A@2V|60@1A@2V | 1500 | 0.3@5mA@0.5A|0.5@100mA@1A | Sack | 3 | TO-126N | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3K347R,LF
Trans MOSFET N-CH Si 38V 2A Automotive AEC-Q101 3-Pin SOT-23F T/R
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Bestand
2
0,0548 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 38 | ±20 | 2 | 340@10V | 2.5@10V | 2.5 | 2000 | 86@10V | Tape and Reel | 3 | SOT-23F | SOT | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK090N65Z,S1F(S
Trans MOSFET N-CH Si 650V 30A 3-Pin(3+Tab) TO-247
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Bestand
120
2,4031 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 650 | ±30 | 30 | 90@10V | 47@10V | 230000 | 2780@300V | 3 | TO-247 | TO | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK090A65Z,S4X(S
Trans MOSFET N-CH Si 650V 30A 3-Pin(3+Tab) TO-220SIS
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Bestand
4
3,05 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 650 | ±30 | 30 | 90@10V | 47@10V | 45000 | 2780@300V | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK4R3E06PL,S1X(S
Trans MOSFET N-CH Si 60V 106A 3-Pin(3+Tab) TO-220
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Bestand
15
Von 0,9011 € bis 1,8543 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 60 | ±20 | 106 | 4.3@10V | 23.9@4.5V|48.2@10V | 87000 | 3280@30V | 3 | TO-220 | TO | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK9A90E,S4X(S
Trans MOSFET N-CH Si 900V 9A 3-Pin(3+Tab) TO-220SIS Tube
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Bestand
20
Von 1,4037 € bis 2,8941 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 900 | ±30 | 4 | 9 | 1300@10V | 46@10V | 46 | 50000 | 2000@25V | Tube | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK16J55D(F)
Trans MOSFET N-CH Si 550V 16A 3-Pin(3+Tab) TO-3PN
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Bestand
67
Von 1,0138 € bis 1,707 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 550 | ±30 | 16 | 370@10V | 40@10V | 40 | 250000 | 2300@25V | 3 | TO-3PN | TO | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN2421(TE85L,F)
Trans Digital BJT PNP 50V 0.8A 200mW 3-Pin S-Mini T/R
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Bestand
2.180
Von 0,1456 € bis 0,3275 €
pro Stück
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Toshiba | Digital-BJT | PNP | Single | 50 | 1 | 1 | 0.8 | 60@100mA@1V | 200 | 0.25@2mA@50mA | Tape and Reel | 3 | S-Mini | SOT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK10A60W,S4VX
Trans MOSFET N-CH Si 600V 9.7A 3-Pin(3+Tab) TO-220SIS Magazine
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Bestand
20
0,9956 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 9.7 | 380@10V | 20@10V | 20 | 30000 | 700@300V | Magazine | 3 | TO-220SIS | TO | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CRH01(T5L,TEMQ)
Diode Switching 200V 1A 2-Pin S-FLAT T/R
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Bestand
2.011
Von 0,037 € bis 0,1014 €
pro Stück
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Toshiba | Gleichrichter | Switching Diode | Single | 200 | 1 | 15 | 0.98 | 10 | 35 | Tape and Reel | 2 | S-FLAT | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK380A60Y,S4X
Trans MOSFET N-CH Si 600V 9.7A 3-Pin(3+Tab) TO-220SIS Tube
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Bestand
4
0,3984 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 4 | 9.7 | 380@10V | 20@10V | 20 | 30000 | 590@300V | Tube | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CSLZ6V8,L3F | 6.8V ZNR DIODE SOD-962 OVP
Diode Zener Single 6.8V 6% 400mW 2-Pin SL T/R
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Bestand
7.340
Von 0,0083 € bis 0,041 €
pro Stück
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Toshiba | Zener | Voltage Regulator | Single | 6.8 | 6% | 5 | 0.5 | 30 | 400 | 400 | Tape and Reel | 2 | SL | SOD | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3K16FU,LF
Trans MOSFET N-CH Si 20V 0.1A 3-Pin USM T/R Automotive AEC-Q101
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Bestand
87
Von 0,0373 € bis 0,1185 €
pro Stück
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Toshiba | MOSFETs | Small Signal | Si | N | Single | Enhancement | 1 | 20 | ±10 | 0.1 | 3000@4V | 150 | 9.3@3V | Tape and Reel | 3 | USM | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TW015Z65C,S1F
Trans MOSFET N-CH SiC 650V 100A 4-Pin(4+Tab) TO-247 Tube
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Bestand
30
26,7312 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | SiC | N | Single Dual Source | Enhancement | 1 | 650 | 25 | 100 | 22@18V | 128@18V | 342000 | 4850@400V | Tube | 4 | TO-247 | TO | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPH6R30ANL,L1Q(M
Trans MOSFET N-CH Si 100V 66A 8-Pin SOP Advance T/R
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Bestand
920
Von 0,4852 € bis 0,9791 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 100 | ±20 | 66 | 6300@10V | 27@4.5V|55@10V | 2500 | 3300@50V | 8 | SOP Advance | SO | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TPCC8104,L1Q(CM
Trans MOSFET P-CH Si 30V 20A 8-Pin TSON EP Advance T/R
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Bestand
1.953
Von 0,1889 € bis 0,3622 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | P | Single Quad Drain Triple Source | Enhancement | 1 | 30 | 20 | 20 | 8.8@10V | 58@10V | 1900 | 2260@10V | Tape and Reel | 8 | TSON EP Advance | SON | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK16G60W,RVQ(S
Trans MOSFET N-CH Si 600V 15.8A 3-Pin(2+Tab) D2PAK
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Bestand
1.000
Von 0,8526 € bis 2,5128 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 15.8 | 190@10V | 38@10V | 38 | 130000 | 1350@300V | 3 | D2PAK | TO | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
XPN6R706NC,L1XHQ
Trans MOSFET N-CH Si 60V 40A 8-Pin TSOP Advance(WF) EP T/R Automotive AEC-Q101
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Bestand
9.838
Von 0,3045 € bis 0,3459 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 60 | ±20 | 2.5 | 40 | 6.7@10V | 35@10V | 35 | 2270 | 2000@10V | Tape and Reel | 8 | TSOP Advance(WF) EP | SO | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SV280,H3F(T
Diode VAR Cap Single 15V 3.8pF 2-Pin ESC T/R
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Bestand
2.119
Von 0,0865 € bis 0,2262 €
pro Stück
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Toshiba | Varaktors | VCO | UHF | Single | 15 | 0.003 | 2 | 2V/10V | 3.8@2V | Tape and Reel | 2 | ESC | SOD | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK290P60Y,RQ
Trans MOSFET N-CH Si 600V 11.5A 3-Pin(2+Tab) DPAK T/R
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Bestand
3
0,3984 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 4 | 11.5 | 290@10V | 25@10V | 25 | 100000 | 730@300V | Tape and Reel | 3 | DPAK | TO | No | No | No | No | EAR99 |